INDUSTRIAL Other Function Memory ICs 1,153

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Data Polling
MT9JBF12872PIY-1G4D1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				4410 mA	134217728 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel				DUAL	R-PDMA-N240			667 MHz		Not Qualified		9663676416 bit								.09 Amp
MT9VDDT1672IY-202	Micron Technology		INDUSTRIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				2475 mA	16777216 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	16MX72	16M	-40 Cel				DUAL	R-PDMA-N184			125 MHz		Not Qualified		1207959552 bit								.027 Amp			.8 ns
MT9VDDT3272HIY-40B	Micron Technology		INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					33554432 words	COMMON	2.6			2.6	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel				DUAL	R-PDMA-N200			200 MHz		Not Qualified		2415919104 bit								.036 Amp			.7 ns
MT9JBF12872PIY-1G5D1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				4410 mA	134217728 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel				DUAL	R-PDMA-N240			667 MHz		Not Qualified		9663676416 bit								.09 Amp
MT9VDDT1672IG-26A	Micron Technology		INDUSTRIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				2925 mA	16777216 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	16MX72	16M	-40 Cel				DUAL	R-PDMA-N184			133 MHz		Not Qualified		1207959552 bit								.027 Amp			.75 ns
MT38L3021A902ZQXZI.X79	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS			8388608 words						16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-40 Cel				BOTTOM	R-PBGA-B88	1.95 V	1.2 mm		8 mm			134217728 bit	1.7 V	IT ALSO CONTAINS 32MBIT(2MBIT X 16) PSRAM							10 mm
MT9VDDT1672IY-26A	Micron Technology		INDUSTRIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				2925 mA	16777216 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	16MX72	16M	-40 Cel				DUAL	R-PDMA-N184			133 MHz		Not Qualified		1207959552 bit								.027 Amp			.75 ns
MT9JSF25672PIY-80CB1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				3600 mA	268435456 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	-40 Cel				DUAL	R-PDMA-N240			400 MHz		Not Qualified		19327352832 bit								.09 Amp
MT28F322D20FH-10TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words		2				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B58	2.2 V	1.2 mm		7 mm	Not Qualified		33554432 bit	1.8 V			e1					12 mm
MT9JSF12872PIY-1G3B1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				4860 mA	134217728 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel				DUAL	R-PDMA-N240			667 MHz		Not Qualified		9663676416 bit								.09 Amp
M39L0R8090U3ZE6F	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS			33554432 words		1.8				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133, 14X14,20		.5 mm	85 Cel		32MX16	32M	-40 Cel				BOTTOM	S-PBGA-B133	1.95 V	1 mm		8 mm			536870912 bit	1.7 V	FLASH IS ORGANISED AS 256M X 1							8 mm
MT9VDDF3272PHIY-265A1	Micron Technology		INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				3150 mA	33554432 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel				DUAL	R-PDMA-N200			133 MHz		Not Qualified		2415919104 bit								.036 Amp
MT28F322D18FH-11BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words		1.8		NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA58,8X13,30	Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B58	1.95 V	1.2 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V		4	e0			NOR TYPE	.000001 Amp	12 mm	YES	110 ns	NO
MT9JBF12872PIY-80BD1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				3150 mA	134217728 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel				DUAL	R-PDMA-N240			400 MHz		Not Qualified		9663676416 bit								.09 Amp
MT9JSF12872PIY-80BB1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				3960 mA	134217728 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel				DUAL	R-PDMA-N240			400 MHz		Not Qualified		9663676416 bit								.09 Amp
MT28F322D18FH-10TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words		1.8		NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA58,8X13,30	Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B58	1.95 V	1.2 mm		7 mm	Not Qualified	TOP	33554432 bit	1.65 V		4	e0			NOR TYPE	.000001 Amp	12 mm	YES	100 ns	NO
NP5Q128AE3ESFC0E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	16	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		50 mA	16777216 words		3			3/3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		16MX8	16M	-40 Cel				DUAL	R-PDSO-G16	3.6 V	2.65 mm		7.5 mm	Not Qualified		134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED		.0002 Amp	10.3 mm
MT9VDDT3272IG-202	Micron Technology		INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					33554432 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel				DUAL	R-PDMA-N184			125 MHz		Not Qualified		2415919104 bit								.036 Amp			.8 ns
MT28F322D20FH-954BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words		2				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B58	2.2 V	1.2 mm		7 mm	Not Qualified		33554432 bit	1.8 V			e1					12 mm
MT9VDVF3272IG-265	Micron Technology		INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					33554432 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel				DUAL	R-PDMA-N184			133 MHz		Not Qualified		2415919104 bit								.036 Amp			.75 ns
MT9VDDT3272IG-26A	Micron Technology		INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					33554432 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel				DUAL	R-PDMA-N184			133 MHz		Not Qualified		2415919104 bit								.036 Amp			.75 ns
MT9JSF25672PIY-1G0B1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				3870 mA	268435456 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	-40 Cel				DUAL	R-PDMA-N240			533 MHz		Not Qualified		19327352832 bit								.09 Amp
MT9JSF25672PIY-80BB1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				3600 mA	268435456 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	-40 Cel				DUAL	R-PDMA-N240			400 MHz		Not Qualified		19327352832 bit								.09 Amp
M39L0R8090U3ZE6E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS			33554432 words		1.8				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		32MX16	32M	-40 Cel				BOTTOM	S-PBGA-B133	1.95 V	1 mm		8 mm			536870912 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm
MT28F322D20FH-10BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words		2				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B58	2.2 V	1.2 mm		7 mm	Not Qualified		33554432 bit	1.8 V			e1					12 mm
MT9VDDT1672IG-265	Micron Technology		INDUSTRIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				2925 mA	16777216 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	16MX72	16M	-40 Cel				DUAL	R-PDMA-N184			133 MHz		Not Qualified		1207959552 bit								.027 Amp			.75 ns
MT28C6428P18FM-85TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	67	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		80 mA	4194304 words		1.8	FLASH+SRAM		1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA67,8X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B67	1.9 V	1.4 mm		9 mm	Not Qualified		67108864 bit	1.7 V	SRAM IS ORGANISED AS 512K X 16		e1				.00007 Amp	11.5 mm		85 ns
NP8P128AE3BSM60E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	56	TSOP1		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS			16777216 words		3				8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		16MX8	16M	-40 Cel				DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm			134217728 bit	2.7 V								18.4 mm
MT9VDDT3272IG-262	Micron Technology		INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					33554432 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel				DUAL	R-PDMA-N184			133 MHz		Not Qualified		2415919104 bit								.036 Amp			.75 ns
MT9JSF25672PIY-1G3B1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				4140 mA	268435456 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	-40 Cel				DUAL	R-PDMA-N240			667 MHz		Not Qualified		19327352832 bit								.09 Amp
MT36JSZS1G72PIY-1G1D1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				6480 mA	1073741824 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	-40 Cel				DUAL	R-PDMA-N240			533 MHz		Not Qualified		77309411328 bit								.36 Amp
MT9JSF12872PIY-80CB1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				3960 mA	134217728 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel				DUAL	R-PDMA-N240			400 MHz		Not Qualified		9663676416 bit								.09 Amp
MT28F322D18FH-10BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words		1.8		NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA58,8X13,30	Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B58	1.95 V	1.2 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V		4	e0			NOR TYPE	.000001 Amp	12 mm	YES	100 ns	NO
MT28F322D20FH-954TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words		2				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B58	2.2 V	1.2 mm		7 mm	Not Qualified		33554432 bit	1.8 V			e1					12 mm
MT9JBF12872PIY-1G0D1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				3510 mA	134217728 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel				DUAL	R-PDMA-N240			533 MHz		Not Qualified		9663676416 bit								.09 Amp
MT38W2021AA033JZZI.X69	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	52	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS			33554432 words		1.8				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		32MX16	32M	-40 Cel				BOTTOM	R-PBGA-B52	2 V	1.2 mm		4 mm			536870912 bit	1.7 V	IT ALSO CONTAINS 64MBIT(4MBIT X 16) PSRAM							6 mm
MT28F322D15FH-104BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words		1.5				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B58	1.575 V	1.2 mm		7 mm	Not Qualified		33554432 bit	1.425 V			e1					12 mm
MT9VDDT3272IY-265	Micron Technology		INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					33554432 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel				DUAL	R-PDMA-N184			133 MHz		Not Qualified		2415919104 bit								.036 Amp			.75 ns
MT28C3212P2FL-11BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		25 mA	2097152 words			FLASH+SRAM		1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel			Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm		8 mm	Not Qualified		33554432 bit	1.65 V	SRAM ORGANISATION IS 128K X 16		e0				.00006 Amp	12 mm		110 ns
MT9VDDF3272IY-202	Micron Technology		INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					33554432 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel				DUAL	R-PDMA-N184			125 MHz		Not Qualified		2415919104 bit								.036 Amp			.8 ns
MT9VDDF3272IG-202	Micron Technology		INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					33554432 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel				DUAL	R-PDMA-N184			125 MHz		Not Qualified		2415919104 bit								.036 Amp			.8 ns
MT28C3214P2FL-95TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		95 mA	2097152 words			FLASH+SRAM		1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel			Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm		8 mm	Not Qualified		33554432 bit	1.65 V	ALSO CONTAINS 256K X 16 SRAM		e0				.000001 Amp	12 mm		95 ns
MT28C3224P18FL-85BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words		1.8	FLASH+SRAM		1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B66	1.9 V	1.4 mm		8 mm	Not Qualified		33554432 bit	1.7 V	SRAM IS ORGANISED AS 256K X 16		e1				.000001 Amp	12 mm		85 ns
MT28C3212P2FL-10BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		25 mA	2097152 words			FLASH+SRAM		1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel			Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm		8 mm	Not Qualified		33554432 bit	1.65 V	SRAM ORGANISATION IS 128K X 16		e0				.00006 Amp	12 mm		100 ns
MT28F322D15FH-10BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words		1.5				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B58	1.575 V	1.2 mm		7 mm	Not Qualified		33554432 bit	1.425 V			e1					12 mm
MT9VDDT1672IY-265	Micron Technology		INDUSTRIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				2925 mA	16777216 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	16MX72	16M	-40 Cel				DUAL	R-PDMA-N184			133 MHz		Not Qualified		1207959552 bit								.027 Amp			.75 ns
MT9VDDT1672IG-202	Micron Technology		INDUSTRIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				2475 mA	16777216 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	16MX72	16M	-40 Cel				DUAL	R-PDMA-N184			125 MHz		Not Qualified		1207959552 bit								.027 Amp			.8 ns
MT38L3031AA03JVZZI.X7A	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS			8388608 words						16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-40 Cel				BOTTOM	R-PBGA-B56	1.95 V	1.2 mm		6 mm			134217728 bit	1.7 V	IT ALSO CONTAINS 64MBIT(4MBIT X 16) PSRAM							8 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.