INDUSTRIAL Other Function Memory ICs 1,153

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Data Polling
MT28C3224P20FL-80TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words		2	FLASH+SRAM		2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm		8 mm	Not Qualified		33554432 bit	1.8 V	SRAM IS ORGANISED AS 256K X 16		e1		.000001 Amp	12 mm		80 ns
MT9VDVF3272IG-202	Micron Technology		INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					33554432 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel				DUAL	R-PDMA-N184			125 MHz		Not Qualified		2415919104 bit						.036 Amp			.8 ns
MT9VDDF3272PHIG-265A1	Micron Technology		INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				3150 mA	33554432 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel				DUAL	R-PDMA-N200			133 MHz		Not Qualified		2415919104 bit						.036 Amp
MT36JSZF51272PIY-1G0D1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				7920 mA	536870912 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	-40 Cel				DUAL	R-PDMA-N240			533 MHz		Not Qualified		38654705664 bit						.36 Amp
MT28C3214P2FL-11TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		95 mA	2097152 words		1.8	FLASH+SRAM		1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm		8 mm	Not Qualified		33554432 bit	1.65 V	SRAM ORGANISATION IS 256K X 16		e1		.000001 Amp	12 mm		110 ns
MT36HVS25672PY-667D1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				4536 mA	268435456 words	COMMON	1.8			1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	-40 Cel				DUAL	R-PDMA-N240			333 MHz		Not Qualified		19327352832 bit									.45 ns
MT38M4041A3034EZZI.XK6	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	56	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS			16777216 words		1.8				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16MX16	16M	-40 Cel				BOTTOM	S-PBGA-B56	1.95 V	1 mm		8 mm			268435456 bit	1.7 V	IT ALSO CONTAINS 128MBIT(8MBIT X 16) PSRAM					8 mm
MT28C3224P20FL-80BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words		2	FLASH+SRAM		2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm		8 mm	Not Qualified		33554432 bit	1.8 V	SRAM IS ORGANISED AS 256K X 16		e1		.000001 Amp	12 mm		80 ns
MT28C6428P20FM-80BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	67	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		80 mA	4194304 words		2	FLASH+SRAM		1.9	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA67,8X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B67	2.2 V	1.4 mm		9 mm	Not Qualified		67108864 bit	1.8 V	SRAM IS ORGANISED AS 512K X 16		e1		.00007 Amp	11.5 mm		80 ns
MT28C3212P2FL-10TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		25 mA	2097152 words			FLASH+SRAM		1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel			Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm		8 mm	Not Qualified		33554432 bit	1.65 V	SRAM ORGANISATION IS 128K X 16		e0		.00006 Amp	12 mm		100 ns
MT38W2021A502ZQXZI.X69	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS			4194304 words						16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel				BOTTOM	R-PBGA-B88	1.95 V	1.2 mm		8 mm			67108864 bit	1.7 V	IT ALSO CONTAINS 32MBIT(2MBIT X 16) PSRAM					10 mm
MT9JSF25672PIY-1G1B1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				3870 mA	268435456 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	-40 Cel				DUAL	R-PDMA-N240			533 MHz		Not Qualified		19327352832 bit						.09 Amp
MT9JBF12872PIY-80CD1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				3150 mA	134217728 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel				DUAL	R-PDMA-N240			400 MHz		Not Qualified		9663676416 bit						.09 Amp
MT36JSZF51272PIY-1G4D1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				8640 mA	536870912 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	-40 Cel				DUAL	R-PDMA-N240			667 MHz		Not Qualified		38654705664 bit						.36 Amp
MT9VDDF6472PHIG-265A1	Micron Technology		INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				2800 mA	67108864 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	64MX72	64M	-40 Cel				DUAL	R-PDMA-N200			133 MHz		Not Qualified		4831838208 bit						.04 Amp
MT9JBF12872PIY-1G1D1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				3510 mA	134217728 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel				DUAL	R-PDMA-N240			533 MHz		Not Qualified		9663676416 bit						.09 Amp
NP8P128AE3B1760E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS			16777216 words		3				8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel				BOTTOM	R-PBGA-B64	3.6 V	1.2 mm		8 mm			134217728 bit	2.7 V						10 mm
MT9VDVF3272IY-202	Micron Technology		INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					33554432 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel				DUAL	R-PDMA-N184			125 MHz		Not Qualified		2415919104 bit						.036 Amp			.8 ns
MT28C3212P2FL-11TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		25 mA	2097152 words			FLASH+SRAM		1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel			Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm		8 mm	Not Qualified		33554432 bit	1.65 V	SRAM ORGANISATION IS 128K X 16		e0		.00006 Amp	12 mm		110 ns
MT28C3224P18FL-85TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words		1.8	FLASH+SRAM		1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B66	1.9 V	1.4 mm		8 mm	Not Qualified		33554432 bit	1.7 V	SRAM IS ORGANISED AS 256K X 16		e1		.000001 Amp	12 mm		85 ns
MT9JSF12872PIY-1G1B1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				4230 mA	134217728 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel				DUAL	R-PDMA-N240			533 MHz		Not Qualified		9663676416 bit						.09 Amp
MT9VDDF3272IG-265	Micron Technology		INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					33554432 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel				DUAL	R-PDMA-N184			133 MHz		Not Qualified		2415919104 bit						.036 Amp			.75 ns
MT28C3214P2FL-95BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		95 mA	2097152 words			FLASH+SRAM		1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel			Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm		8 mm	Not Qualified		33554432 bit	1.65 V	ALSO CONTAINS 256K X 16 SRAM		e0		.000001 Amp	12 mm		95 ns
MT28C3212P2NFL-11TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		25 mA	2097152 words			FLASH+SRAM		1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel			Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm		8 mm	Not Qualified		33554432 bit	1.65 V	SRAM ORGANISATION IS 128K X 16		e0		.00006 Amp	12 mm		110 ns
MT9VDDT6472HIG-40B	Micron Technology		INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				4050 mA	67108864 words	COMMON	2.6			2.6	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	64MX72	64M	-40 Cel				DUAL	R-PDMA-N200			200 MHz		Not Qualified		4831838208 bit						.045 Amp			.7 ns
MT9VDDT6472HIY-40B	Micron Technology		INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				4050 mA	67108864 words	COMMON	2.6			2.6	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	64MX72	64M	-40 Cel				DUAL	R-PDMA-N200			200 MHz		Not Qualified		4831838208 bit						.045 Amp			.7 ns
MT9VDDF6472PHIY-265A1	Micron Technology		INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				2800 mA	67108864 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	64MX72	64M	-40 Cel				DUAL	R-PDMA-N200			133 MHz		Not Qualified		4831838208 bit						.04 Amp
MT38M5041A3034EZZI.XR6	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	56	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS			33554432 words		1.8				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		32MX16	32M	-40 Cel				BOTTOM	S-PBGA-B56	1.95 V	1 mm		8 mm			536870912 bit	1.7 V	IT ALSO CONTAINS 128MBIT(8MBIT X 16) PSRAM					8 mm
MT38W2011A90YZQXZI.X68	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS			4194304 words						16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel				BOTTOM	R-PBGA-B88	1.95 V	1.2 mm		8 mm			67108864 bit	1.7 V	IT ALSO CONTAINS 16MBIT(1MBIT X 16) PSRAM					10 mm
MT28C3214P2NFL-11TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words		1.8				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm		8 mm	Not Qualified		33554432 bit	1.65 V	SRAM ORGANISATION IS 256K X 16		e1			12 mm
MT28F322D15FH-10TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words		1.5				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B58	1.575 V	1.2 mm		7 mm	Not Qualified		33554432 bit	1.425 V			e1			12 mm
MT9VDDT3272IY-262	Micron Technology		INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					33554432 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel				DUAL	R-PDMA-N184			133 MHz		Not Qualified		2415919104 bit						.036 Amp			.75 ns
MT9JBF12872PIY-1G3D1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				4410 mA	134217728 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel				DUAL	R-PDMA-N240			667 MHz		Not Qualified		9663676416 bit						.09 Amp
MT28F322D18FH-103TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words		1.8		NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA58,8X13,30	Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B58	1.95 V	1.2 mm		7 mm	Not Qualified	TOP	33554432 bit	1.65 V		4	e0	NOR TYPE	.000001 Amp	12 mm	YES	100 ns	NO
MT28F322D18FH-11TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words		1.8		NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA58,8X13,30	Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B58	1.95 V	1.2 mm		7 mm	Not Qualified	TOP	33554432 bit	1.65 V		4	e0	NOR TYPE	.000001 Amp	12 mm	YES	110 ns	NO
MT9VDDT3272HIG-40B	Micron Technology		INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					33554432 words	COMMON	2.6			2.6	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel				DUAL	R-PDMA-N200			200 MHz		Not Qualified		2415919104 bit						.036 Amp			.7 ns
MT9VDDT3272IG-265	Micron Technology		INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					33554432 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel				DUAL	R-PDMA-N184			133 MHz		Not Qualified		2415919104 bit						.036 Amp			.75 ns
MT38W1011AA033JZZI.XB8	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	52	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS			2097152 words		1.8				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		2MX16	2M	-40 Cel				BOTTOM	R-PBGA-B52	1.95 V	1.2 mm		4 mm			33554432 bit	1.7 V	IT ALSO CONTAINS 16MBIT(1MBIT X 16) PSRAM					6 mm
MT9JSF12872PIY-1G0B1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				4230 mA	134217728 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel				DUAL	R-PDMA-N240			533 MHz		Not Qualified		9663676416 bit						.09 Amp
MT9VDDF3272IY-265	Micron Technology		INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					33554432 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel				DUAL	R-PDMA-N184			133 MHz		Not Qualified		2415919104 bit						.036 Amp			.75 ns
MT28C6428P18FM-85BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	67	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		80 mA	4194304 words		1.8	FLASH+SRAM		1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA67,8X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B67	1.9 V	1.4 mm		9 mm	Not Qualified		67108864 bit	1.7 V	SRAM IS ORGANISED AS 512K X 16		e1		.00007 Amp	11.5 mm		85 ns
MT9VDDT3272IY-26A	Micron Technology		INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					33554432 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel				DUAL	R-PDMA-N184			133 MHz		Not Qualified		2415919104 bit						.036 Amp			.75 ns
MT36JSZF51272PIY-1G1D1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				7920 mA	536870912 words	COMMON	1.5			1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	-40 Cel				DUAL	R-PDMA-N240			533 MHz		Not Qualified		38654705664 bit						.36 Amp
MT38W1011A90YZQXZI.XB8	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS			2097152 words						16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel				BOTTOM	R-PBGA-B88	1.95 V	1.2 mm		8 mm			33554432 bit	1.7 V	IT ALSO CONTAINS 16MBIT(1MBIT X 16) PSRAM					10 mm
MT28C3214P2FL-10TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS			2097152 words		1.8				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm		8 mm	Not Qualified		33554432 bit	1.65 V	SRAM ORGANISATION IS 256K X 16		e1			12 mm
MT9VDDT1672IG-262	Micron Technology		INDUSTRIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD				2970 mA	16777216 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	16MX72	16M	-40 Cel				DUAL	R-PDMA-N184			133 MHz		Not Qualified		1207959552 bit						.027 Amp			.75 ns
MT28F322D18FH-103BET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	58	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	2097152 words		1.8		NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA58,8X13,30	Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B58	1.95 V	1.2 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V		4	e0	NOR TYPE	.000001 Amp	12 mm	YES	100 ns	NO
MT9VDDT3272IY-202	Micron Technology		INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD					33554432 words	COMMON	2.5			2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel				DUAL	R-PDMA-N184			125 MHz		Not Qualified		2415919104 bit						.036 Amp			.8 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.