INDUSTRIAL Other Function Memory ICs 1,153

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT9VDDF3272PHIG-265A1	Micron Technology		INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3150 mA	33554432 words	COMMON	2.5		2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel		DUAL	R-PDMA-N200			133 MHz		Not Qualified	2415919104 bit						.036 Amp
MT36JSZF51272PIY-1G0D1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		7920 mA	536870912 words	COMMON	1.5		1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	-40 Cel		DUAL	R-PDMA-N240			533 MHz		Not Qualified	38654705664 bit						.36 Amp
MT28C3214P2FL-11TET	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	95 mA	2097152 words		1.8	FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm		8 mm	Not Qualified	33554432 bit	1.65 V	SRAM ORGANISATION IS 256K X 16	e1			.000001 Amp	12 mm	110 ns
MT36HVS25672PY-667D1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		4536 mA	268435456 words	COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	-40 Cel		DUAL	R-PDMA-N240			333 MHz		Not Qualified	19327352832 bit								.45 ns
MT38M4041A3034EZZI.XK6	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	56	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16MX16	16M	-40 Cel		BOTTOM	S-PBGA-B56	1.95 V	1 mm		8 mm		268435456 bit	1.7 V	IT ALSO CONTAINS 128MBIT(8MBIT X 16) PSRAM					8 mm
MT29C1G12MAURACA-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		131072 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel		128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B152	1.95 V	.9 mm		14 mm	Not Qualified	2097152 bit	1.7 V		e1				14 mm
MT29C4G48MAPLCJQ-75IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	TFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		131072 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel		128KX16	128K	-40 Cel		BOTTOM	S-PBGA-B152	1.95 V	1.1 mm		14 mm	Not Qualified	2097152 bit	1.7 V						14 mm
MT29C1G12MAVRACA-75IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		131072 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel		128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B152	1.95 V	.9 mm		14 mm	Not Qualified	2097152 bit	1.7 V		e1				14 mm
MT29C1G12MAVRACA-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		131072 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel		128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B152	1.95 V	.9 mm		14 mm	Not Qualified	2097152 bit	1.7 V		e1				14 mm
MT29C1G12MAADVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260		9 mm
MT29C1G12MADRACG-75IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		131072 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel		128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B152	1.95 V	1 mm		14 mm	Not Qualified	2097152 bit	1.7 V		e1				14 mm
MT29C4G48MAYAPAKQ-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V		e1				12 mm
MT29C2G24MAKLACG-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		131072 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel		128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B152	1.95 V	1 mm		14 mm	Not Qualified	2097152 bit	1.7 V		e1				14 mm
MT29C4G48MAPLCJQ-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	TFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		131072 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel		128KX16	128K	-40 Cel	Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)	BOTTOM	S-PBGA-B152	1.95 V	1.1 mm		14 mm	Not Qualified	2097152 bit	1.7 V		e8	30	260		14 mm
MT29C2G24MAKLACG-75IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		131072 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel		128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B152	1.95 V	1 mm		14 mm	Not Qualified	2097152 bit	1.7 V		e1				14 mm
MT29C8G96MAZAPDJV-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		512MX16	512M	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	1 mm		12 mm		8589934592 bit	1.7 V		e1				12 mm
MT29C2G48MAKLCJI-75IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	TFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		131072 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel		128KX16	128K	-40 Cel		BOTTOM	S-PBGA-B168	1.95 V	1.1 mm		12 mm	Not Qualified	2097152 bit	1.7 V						12 mm
MT29C1G12MAACYAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260		9 mm
MT29C4G96MAZBACJG-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		256MX16	256M	-40 Cel		BOTTOM	S-PBGA-B168	1.95 V	.9 mm		12 mm		4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED		12 mm
MT29C1G12MAAIVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	IT ALSO CONTAINS 512MBIT(32MBIT X 16) MOBILE LPDDR		NOT SPECIFIED	NOT SPECIFIED		9 mm
MT29C4G48MAPLCJG-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		131072 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128KX16	128K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	S-PBGA-B168	1.95 V	.9 mm		12 mm	Not Qualified	2097152 bit	1.7 V		e1	30	260		12 mm
MT29C4G48MAPLCCA-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		131072 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel		128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B152	1.95 V	.9 mm		14 mm	Not Qualified	2097152 bit	1.7 V		e1				14 mm
MT29C4G48MAZAPAKQ-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		131072 words		1.8	FLASH+SDRAM		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	.75 mm		12 mm	Not Qualified	2097152 bit	1.7 V		e1				12 mm
MT29C1G12MAAIYAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	LPDRAM IS ORGANISED AS 32M X 16		NOT SPECIFIED	NOT SPECIFIED		9 mm
MT29C2G24MAAAAKAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		32MX32	32M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16		NOT SPECIFIED	NOT SPECIFIED		9 mm
MT29C4G48MAPLCCA-75IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		131072 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel		128KX16	128K	-40 Cel		BOTTOM	S-PBGA-B152	1.95 V	.9 mm		14 mm	Not Qualified	2097152 bit	1.7 V						14 mm
MT29C1G12MAAIVAMD-5ITTR	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	LPDRAM IS ORGANISED AS 32M X 16		NOT SPECIFIED	NOT SPECIFIED		9 mm
MT29C4G48MAZAPAKQ-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V		e1				12 mm
MT29C1G12MAURACA-75IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		131072 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel		128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B152	1.95 V	.9 mm		14 mm	Not Qualified	2097152 bit	1.7 V		e1				14 mm
MT29C2G24MAAAAHAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		32MX32	32M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16		NOT SPECIFIED	NOT SPECIFIED		9 mm
MT29C2G24MAABAHAMD-5EIT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		32MX32	32M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16					9 mm
MT29C1G12MAAJVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		64MX16	64M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	IT ALSO CONTAINS 512MBIT(32MBIT X 16) MOBILE LPDDR		NOT SPECIFIED	NOT SPECIFIED		9 mm
MT29C1G12MADRACG-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	152	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		131072 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.65 mm	85 Cel		128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B152	1.95 V	1 mm		14 mm	Not Qualified	2097152 bit	1.7 V		e1				14 mm
MT29C4G48MAZBBAKQ-48IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel		256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.9 V	.75 mm		12 mm	Not Qualified	4294967296 bit	1.7 V		e1				12 mm	25 ns
MT29C2G24MAKLAJG-75IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		131072 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel		128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	.9 mm		12 mm	Not Qualified	2097152 bit	1.7 V		e1				12 mm
MT29C4G96MAZAPCJG-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	.9 mm		12 mm		4294967296 bit	1.7 V		e1				12 mm
MT29C1G12MAAJYAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		64MX16	64M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	LPDRAM IS ORGANISED AS 32M X 16		NOT SPECIFIED	NOT SPECIFIED		9 mm
MT29C1G12MAACVAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260		9 mm
MT29C8G96MAZAPDJV-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		512MX16	512M	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	1 mm		12 mm		8589934592 bit	1.7 V		e1				12 mm
MT29C2G24MAABAKAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		32MX32	32M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16					9 mm
MT29C1G12MAAIYAMR-5AIT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	LPDRAM IS ORGANISED AS 32M X 16		NOT SPECIFIED	NOT SPECIFIED		9 mm
MT29C1G12MAADYAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		536870912 bit	1.7 V	NAND FLASH IS ORGANISED AS 64M X 16	e1	30	260		9 mm
MT29C8G96MAZBADJV-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		512MX16	512M	-40 Cel		BOTTOM	S-PBGA-B168	1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED		12 mm
MT29C2G48MAKLCJI-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	TFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		131072 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel		128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	1.1 mm		12 mm	Not Qualified	2097152 bit	1.7 V		e1				12 mm
MT29C4G48MAYBBAHK-48AIT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	137	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B137	1.95 V	1 mm		10.5 mm		4294967296 bit	1.7 V	IT IS ALSO HAVING 2GBIT (X 32) LPDDR	e1	30	260		13 mm
MT29C2G24MAABAHAMD-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	130	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		1.8			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		32MX32	32M	-40 Cel		BOTTOM	R-PBGA-B130	1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	ALSO ORGANISED AS 64M X 16		NOT SPECIFIED	NOT SPECIFIED		9 mm
MT29C2G24MAKLAJG-6IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		131072 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel		128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	.9 mm		12 mm	Not Qualified	2097152 bit	1.7 V		e1				12 mm
MT29C4G48MAPLCJI-75IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	TFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		131072 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel		128KX16	128K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	1.1 mm		12 mm	Not Qualified	2097152 bit	1.7 V		e1				12 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.