INDUSTRIAL Other Function Memory ICs 1,153

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
K1B3216BDD-FI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B54						Not Qualified	33554432 bit					.0001 Amp		70 ns
K1C6416B2D-BI70	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B54	3					Not Qualified	67108864 bit				260	.00003 Amp		70 ns
KS74AHCT670J	Samsung		INDUSTRIAL	16	DIP		RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE					5		5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	85 Cel				-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16						Not Qualified				e0
K5A3380YBC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		50 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.000015 Amp		70 ns
K5A3280YTA-T355	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM				11 mm
K5A3280YTA-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM				11 mm
K5P5781FCM-F055	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		28 mA			2.8	FLASH+SRAM	2.8		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.000001 Amp		55 ns
KBA0401A0M-T401	Samsung	MEMORY CIRCUIT	INDUSTRIAL	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words		3	FLASH+PSRAM+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA80,9X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B80		3.3 V	1.4 mm		10 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 2M X 16 UTRAM AND 512K X 16 SRAM			.000006 Amp	11 mm	85 ns
K5A3340YBC-T7550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 8 / 256K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8				11 mm
K5A3240YTA-T370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM				11 mm
K5A3340YBA-T370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM				11 mm
K5A3240YTC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.00001 Amp		80 ns
KAD090300B-TLLL0	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B69		3.1 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	UTRAM IS ORGANIZED AS 2M X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 8M X 8				11.6 mm
K1S3216B1C-FI85	Samsung		INDUSTRIAL	48	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		30 mA	2097152 words	COMMON			1.8/2	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B48						Not Qualified	33554432 bit					.0001 Amp		85 ns
K5A3A41YBA-K970	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM				11 mm
K5A3340YTC-T8550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 8 / 256K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8				11 mm
K1B3216BDD-BI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B54						Not Qualified	33554432 bit					.0001 Amp		70 ns
K5C6481NBM-T355	Samsung	MEMORY CIRCUIT	INDUSTRIAL	81	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B81		3.3 V	1.2 mm		10.4 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 512K X 16 BIT FULL CMOS SRAM				10.8 mm
K5A3B41YBA-K870	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM				11 mm
K5A3380YTB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM			.000015 Amp	11 mm	80 ns
KAD070300B-TNNL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.00002 Amp		80 ns
KS74AHCT670DT	Samsung		INDUSTRIAL	16	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING					5		5		SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	85 Cel				-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G16						Not Qualified				e0
K1B1616BDB-BI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			1048576 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel		BOTTOM	R-PBGA-B54						Not Qualified	16777216 bit							70 ns
K1C6416B8D-BI70	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B54	3					Not Qualified	67108864 bit				260	.00003 Amp		70 ns
K5A3240YBC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.00001 Amp		70 ns
K1B1616B8B-BI700	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			1048576 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel		BOTTOM	R-PBGA-B54						Not Qualified	16777216 bit							70 ns
KBB05B400M-F402	Samsung	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		50 mA				FLASH+PSRAM	2.9,3,3.3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	R-PBGA-B80						Not Qualified						.000001 Amp		70 ns
K5A3A41YBA-K370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM				11 mm
K5A3280YTC-T8550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 1M X 8 / 512K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8				11 mm
K1S6416BCD-BI70T	Samsung		INDUSTRIAL	48	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B48						Not Qualified	67108864 bit					.00012 Amp		70 ns
KAD080300B-TNNL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.00002 Amp		80 ns
K1C6416B8D-FI70	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B54	3					Not Qualified	67108864 bit				240	.00003 Amp		70 ns
K5A3A41YTA-K370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM				11 mm
K5A3380YBC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		50 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.000015 Amp		80 ns
K5A3340YBC-T8550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 8 / 256K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8				11 mm
KAD050300B-TLLL0	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B69		3.1 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	UTRAM IS ORGANIZED AS 2M X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 8M X 8				11.6 mm
K5C6417YTM-T355	Samsung	MEMORY CIRCUIT	INDUSTRIAL	81	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B81		3.3 V	1.2 mm		10.4 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 1M X 16 BIT FULL CMOS SRAM				10.8 mm
KBA0301A0M-T401	Samsung	MEMORY CIRCUIT	INDUSTRIAL	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words		3	FLASH+PSRAM+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA80,9X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B80		3.3 V	1.4 mm		10 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 2M X 16 UTRAM AND 512K X 16 SRAM			.000006 Amp	11 mm	85 ns
M391B1G73BH0-CMA	Samsung		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1350 mA	1073741824 words	COMMON	1.5		1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	-40 Cel		DUAL	R-PDMA-N240				933 MHz		Not Qualified	77309411328 bit					.27 Amp		.195 ns
K5A3B41YTA-K970	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM				11 mm
K5A3240YTC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.00001 Amp		70 ns
M391B1G73BH0-CK0	Samsung		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1710 mA	1073741824 words	COMMON	1.5		1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	-40 Cel		DUAL	R-PDMA-N240				800 MHz		Not Qualified	77309411328 bit					.27 Amp		.225 ns
K5A3380YTC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		50 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.000015 Amp		80 ns
K5A3B41YTA-K370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM				11 mm
K5A3B41YBA-K370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM				11 mm
K1C6416B2D-BI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B54	3					Not Qualified	67108864 bit				260	.00003 Amp		70 ns
K5A3280YBB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM			.000015 Amp	11 mm	70 ns
KBB06B400M-F402	Samsung	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		50 mA				FLASH+PSRAM	2.9,3,3.3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	R-PBGA-B80						Not Qualified						.000001 Amp		70 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.