INDUSTRIAL Other Function Memory ICs 1,153

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length
DS2436	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE			1.5 mA	256 words			2.7/10	1	CYLINDRICAL	SIP3,.075,50	Other Memory ICs		1.27 mm	85 Cel		256X1	256	-40 Cel	TIN LEAD	BOTTOM	O-PBCY-T3							Not Qualified	256 bit		e0
DS2435S/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		32 words		3.6		8	SMALL OUTLINE, SHRINK PITCH				.65 mm	85 Cel		32X8	32	-40 Cel	TIN LEAD	DUAL	R-PDSO-G16		6.4 V	1.99 mm			5.29 mm	Not Qualified	256 bit	2.5 V	e0					6.2 mm
DS2405Z+T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE	SOT-223	SRAMs		2.3 mm	85 Cel		64X1	64	-40 Cel	MATTE TIN	DUAL	R-PDSO-G4	1	6 V	1.8 mm			3.5 mm	Not Qualified	64 bit	2.8 V	e3					6.5 mm
DS2405+	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		ASYNCHRONOUS		64 words			3/5	1	CYLINDRICAL	SIP3,.1,50	SRAMs		1.27 mm	85 Cel		64X1	64	-40 Cel	MATTE TIN	BOTTOM	O-PBCY-T3		6 V					Not Qualified	64 bit	2.8 V	e3		250
XC17S150XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	5 mA	1040128 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	1040128X1	1040128	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	1040128 bit	3 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S05XLPDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		54544 words		3.3		1	IN-LINE				2.54 mm	85 Cel		54544X1	54544	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified	54544 bit	3 V	e3	30	250			9.3599 mm
XC17S05XLVOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		54544 words		3.3		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel		54544X1	54544	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified	54544 bit	3 V	e3	30	260			4.9 mm
XC17S20VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	10 mA	178144 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	178144X1	178144	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	178144 bit	4.5 V	e0	30	225		.00005 Amp	4.9 mm
XC17S05VOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		53984 words		5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel		53984X1	53984	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm			3.9 mm	Not Qualified	53984 bit	4.5 V	e3	30	260			4.9 mm
XC17S10XLVOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	DIP8,.3	OTP ROMs		1.27 mm	85 Cel	3-STATE	95752X1	95752	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	95752 bit	3 V	e3	30	260		.00005 Amp	4.9 mm
XC17S40SO20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	10 mA	329312 words	COMMON	5	5	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel	3-STATE	329312X1	329312	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	5.5 V	2.65 mm		10 MHz	7.5 mm	Not Qualified	329312 bit	4.5 V	e0	30	225		.00005 Amp	12.8 mm
XC17S20XLVOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		179160 words		3.3		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel		179160X1	179160	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified	179160 bit	3 V	e3	30	260			4.9 mm
XC17S30VOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		247968 words		5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel		247968X1	247968	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm			3.9 mm	Not Qualified	247968 bit	4.5 V	e3	30	260			4.9 mm
XC17S30XLPDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		249168 words		3.3		1	IN-LINE				2.54 mm	85 Cel		249168X1	249168	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified	249168 bit	3 V	e3	30	250			9.3599 mm
XC17S05XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	5 mA	54544 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	54544X1	54544	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	54544 bit	3 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S50XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	5 mA	559232 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	559232X1	559232	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	559232 bit	3 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S40XLSOG20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		330696 words		3.3		1	SMALL OUTLINE				1.27 mm	85 Cel		330696X1	330696	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	330696 bit	3 V	e3	30	260			12.8 mm
XC17S40SOG20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		329312 words		5		1	SMALL OUTLINE				1.27 mm	85 Cel		329312X1	329312	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	5.5 V	2.65 mm			7.5 mm	Not Qualified	329312 bit	4.5 V	e3	30	260			12.8 mm
XC17S05VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	10 mA	53984 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	53984X1	53984	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	53984 bit	4.5 V	e0	30	225		.00005 Amp	4.9 mm
XC17S10VOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		95008 words		5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel		95008X1	95008	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm			3.9 mm	Not Qualified	95008 bit	4.5 V	e3	30	260			4.9 mm
XCCACEM64BG388I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	388	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	240 mA	4194304 words		1.8	1.8,3.3	16	GRID ARRAY	BGA388,26X26,50	Flash Memories		1.27 mm	85 Cel		4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	S-PBGA-B388		1.89 V	2.87 mm	1000000 Write/Erase Cycles	133 MHz	35 mm	Not Qualified	67108864 bit	1.71 V	e0			NOR TYPE		35 mm
XC17S20XLVO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	179160X1	179160	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	179160 bit	3 V	e0	30	225		.00005 Amp	4.9 mm
XC17S10PDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		95008 words		5		1	IN-LINE				2.54 mm	85 Cel		95008X1	95008	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm			7.62 mm	Not Qualified	95008 bit	4.5 V	e3	30	250			9.3599 mm
XC17S100XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	5 mA	781248 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	781248X1	781248	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	781248 bit	3 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S100XLSOG20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		781248 words		3.3		1	SMALL OUTLINE				1.27 mm	85 Cel		781248X1	781248	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	781248 bit	3 V	e3	30	260			12.8 mm
XC17S10XLVO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	95752X1	95752	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	95752 bit	3 V	e0	30	225		.00005 Amp	4.9 mm
XC17S05XLVO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	5 mA	54544 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	54544X1	54544	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	54544 bit	3 V	e0	30	225		.00005 Amp	4.9 mm
XC17S20XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	179160X1	179160	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	179160 bit	3 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S20XLPDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		179160 words		3.3		1	IN-LINE				2.54 mm	85 Cel		179160X1	179160	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified	179160 bit	3 V	e3	30	250			9.3599 mm
XC17S30PDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		247968 words		5		1	IN-LINE				2.54 mm	85 Cel		247968X1	247968	-40 Cel	MATTE TIN	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm			7.62 mm	Not Qualified	247968 bit	4.5 V	e3	30	250			9.3599 mm
XC17S150XLSOG20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		1040128 words		3.3		1	SMALL OUTLINE				1.27 mm	85 Cel		1040128X1	1040128	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	1040128 bit	3 V	e3	30	260			12.8 mm
XC17S150XLSO20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	5 mA	1040128 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel	3-STATE	1040128X1	1040128	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		10 MHz	7.5 mm	Not Qualified	1040128 bit	3 V	e0	30	225		.00005 Amp	12.8 mm
XC17S30XLVOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	249168X1	249168	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	249168 bit	3 V	e3	30	260		.00005 Amp	4.9 mm
XCCACEM16BG388I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	388	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	240 mA	1048576 words		1.8	1.8,3.3	16	GRID ARRAY	BGA388,26X26,50	Flash Memories	20	1.27 mm	85 Cel		1MX16	1M	-40 Cel		BOTTOM	S-PBGA-B388	1	1.89 V	2.87 mm	1000000 Write/Erase Cycles		35 mm	Not Qualified	16777216 bit	1.71 V				NOR TYPE		35 mm
XC17S40XLPDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		330696 words		3.3		1	IN-LINE				2.54 mm	85 Cel		330696X1	330696	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified	330696 bit	3 V	e3	30	250			9.3599 mm
XC17S20PDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		178144 words		5		1	IN-LINE				2.54 mm	85 Cel		178144X1	178144	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm			7.62 mm	Not Qualified	178144 bit	4.5 V	e3	30	250			9.3599 mm
XC17S40XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	5 mA	330696 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	330696X1	330696	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	330696 bit	3 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S10VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	10 mA	95008 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	95008X1	95008	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	5.5 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	95008 bit	4.5 V	e0	30	225		.00005 Amp	4.9 mm
XC17S150XLPDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		1040128 words		3.3		1	IN-LINE				2.54 mm	85 Cel		1040128X1	1040128	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified	1040128 bit	3 V	e3	30	250			9.3599 mm
XC17S50XLPDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		559232 words		3.3		1	IN-LINE				2.54 mm	85 Cel		559232X1	559232	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified	559232 bit	3 V	e3	30	250			9.3599 mm
XC17S40PDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		329312 words		5		1	IN-LINE				2.54 mm	85 Cel		329312X1	329312	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm			7.62 mm	Not Qualified	329312 bit	4.5 V	e3	30	250			9.3599 mm
XC17S10XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	5 mA	95752 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	95752X1	95752	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	95752 bit	3 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S10XLPDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		95752 words		3.3		1	IN-LINE				2.54 mm	85 Cel		95752X1	95752	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified	95752 bit	3 V	e3	30	250			9.3599 mm
XC17S05PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS	10 mA	53984 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	53984X1	53984	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.5 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	53984 bit	4.5 V	e0	30	225		.00005 Amp	9.3599 mm
XC17S100XLSO20I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	5 mA	781248 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel	3-STATE	781248X1	781248	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		10 MHz	7.5 mm	Not Qualified	781248 bit	3 V	e0	30	225		.00005 Amp	12.8 mm
XC17S30XLVO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS	5 mA	249168 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	249168X1	249168	-40 Cel	TIN LEAD	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	249168 bit	3 V	e0	30	225		.00005 Amp	4.9 mm
XC17S100XLPDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		781248 words		3.3		1	IN-LINE				2.54 mm	85 Cel		781248X1	781248	-40 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified	781248 bit	3 V	e3	30	250			9.3599 mm
XC17S30SOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		247968 words		5		1	SMALL OUTLINE					85 Cel		247968X1	247968	-40 Cel		DUAL	R-PDSO-G8		5.5 V					Not Qualified	247968 bit	4.5 V	e0

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.