INDUSTRIAL Other Function Memory ICs 1,153

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
AM49DL322BGT70IS	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0		260	.000005 Amp		70 ns
S27KS0641DABHA033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S71WS064JB0BAI2Y2	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B80					Not Qualified							.00005 Amp		55 ns
S27KS0641DGBHB033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S71WS064JB0BAI2A1	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B80					Not Qualified							.00005 Amp		55 ns
AM49DL322BGT85IT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0		260	.000005 Amp		85 ns
S27KL0641DABHI033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm		67108864 bit	2.7 V						8 mm
AM49DL324BGT85IT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0		260	.000005 Amp		85 ns
S27KS0641DABHA030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S27KL0641DABHB030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm		67108864 bit	2.7 V						8 mm
S27KL0641DABHV020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm		67108864 bit	2.7 V						8 mm
S27KS0641DGBHB030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S71WS128JC0BAIAA1	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B84					Not Qualified							.00005 Amp		55 ns
S71WS064JB0BFI2Y3	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B80					Not Qualified							.00005 Amp		55 ns
S71WS128JA0BFIAA1	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B84					Not Qualified							.00005 Amp		55 ns
S27KS0641DGBHV033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
AM49DL323BGB70IS	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0		260	.000005 Amp		70 ns
S71WS128JA0BAIAA1	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B84					Not Qualified							.00005 Amp		55 ns
AM49DL323BGB70IT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0		260	.000005 Amp		70 ns
S27KL0641DABHA023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm		67108864 bit	2.7 V						8 mm
S71WS064JB0BAI2Y0	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B80					Not Qualified							.00005 Amp		55 ns
S71WS256JC0BAIT61	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B84					Not Qualified							.00005 Amp		55 ns
S71WS128JB0BFIAA1	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B84					Not Qualified							.00005 Amp		55 ns
S27KL0641DABHB033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm		67108864 bit	2.7 V						8 mm
AM49DL323BGT85IS	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0		260	.000005 Amp		85 ns
S71WS064JA0BFI2A1	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B80					Not Qualified							.00005 Amp		55 ns
S71WS128JC0BFIAA1	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B84					Not Qualified							.00005 Amp		55 ns
S27KS0641DPBHV020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24	3	1.95 V	1 mm	6 mm		67108864 bit	1.7 V						8 mm
S27KS0641DGBHI033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
AM49DL322BGB70IS	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0		260	.000005 Amp		70 ns
S71WS064JB0BFI2Y2	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel		BOTTOM	R-PBGA-B80					Not Qualified							.00005 Amp		55 ns
S27KS0641DPBHA023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
AM49DL324BGB85IT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0		260	.000005 Amp		85 ns
AM49DL324BGT70IT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0		260	.000005 Amp		70 ns
S27KL0641DABHA020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm		67108864 bit	2.7 V						8 mm
S27KS0641DPBHB023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
AM49DL322BGT70IT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		40 mA		3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel			-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3				Not Qualified				e0		260	.000005 Amp		70 ns
S71KL512SC0BHB003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24	3		1 mm	6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S71KL256SC0BHB003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		33554432 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	32MX8	32M	-40 Cel		BOTTOM	R-PBGA-B24	3		1 mm	6 mm		268435456 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S72VS256RE0AHBJH3	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		268435456 bit	1.7 V						8 mm
S71KL256SC0BHA000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		33554432 words	3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	32MX8	32M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm		268435456 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S72XS256RE0AHBH20	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		268435456 bit	1.7 V						8 mm
S70KS1281DABHA033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S70KS1281DABHB033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S98WS064RBOHI0023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B88		1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V						10 mm
S72XS256RE0AHBJ20	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		268435456 bit	1.7 V						8 mm
S70KS1281DABHB030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words	1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S72VS256RE0AHBHH3	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-40 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		268435456 bit	1.7 V						8 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.