INDUSTRIAL Other Function Memory ICs 1,153

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Interleaved Burst Length Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

S27KS0641DPBHA020

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

24

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

SYNCHRONOUS

8388608 words

1.8

8

GRID ARRAY, VERY THIN PROFILE

1 mm

85 Cel

8MX8

8M

-40 Cel

BOTTOM

R-PBGA-B24

1.95 V

1 mm

6 mm

67108864 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

AM49DL323BGB85IS

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

73

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

40 mA

3

FLASH+PSRAM

3

GRID ARRAY, FINE PITCH

BGA73,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B73

3

Not Qualified

e0

260

.000005 Amp

85 ns

S27KS0641DGBHV030

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

24

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

8

GRID ARRAY, VERY THIN PROFILE

1 mm

105 Cel

8MX8

8M

-40 Cel

BOTTOM

R-PBGA-B24

1.95 V

1 mm

6 mm

67108864 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

S27KS0641DGBHA033

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

24

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

SYNCHRONOUS

8388608 words

1.8

8

GRID ARRAY, VERY THIN PROFILE

1 mm

85 Cel

8MX8

8M

-40 Cel

BOTTOM

R-PBGA-B24

1.95 V

1 mm

6 mm

67108864 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

AM49DL322BGB85IS

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

73

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

40 mA

3

FLASH+PSRAM

3

GRID ARRAY, FINE PITCH

BGA73,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B73

3

Not Qualified

e0

260

.000005 Amp

85 ns

AM49DL324BGB70IS

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

73

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

40 mA

3

FLASH+PSRAM

3

GRID ARRAY, FINE PITCH

BGA73,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B73

3

Not Qualified

e0

260

.000005 Amp

70 ns

S27KS0641DABHI033

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

24

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

8

GRID ARRAY, VERY THIN PROFILE

1 mm

85 Cel

8MX8

8M

-40 Cel

BOTTOM

R-PBGA-B24

1.95 V

1 mm

6 mm

67108864 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

S71WS128JB0BAIAY2

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

84

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

60 mA

1.8

FLASH+PSRAM

1.8

GRID ARRAY, FINE PITCH

BGA84,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

BOTTOM

R-PBGA-B84

Not Qualified

.00005 Amp

55 ns

S27KS0641DGBHI030

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

24

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

8

GRID ARRAY, VERY THIN PROFILE

1 mm

85 Cel

8MX8

8M

-40 Cel

BOTTOM

R-PBGA-B24

1.95 V

1 mm

6 mm

67108864 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

S27KS0641DGBHA030

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

24

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

SYNCHRONOUS

8388608 words

1.8

8

GRID ARRAY, VERY THIN PROFILE

1 mm

85 Cel

8MX8

8M

-40 Cel

BOTTOM

R-PBGA-B24

1.95 V

1 mm

6 mm

67108864 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

AM49DL323BGT70IT

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

73

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

40 mA

3

FLASH+PSRAM

3

GRID ARRAY, FINE PITCH

BGA73,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B73

3

Not Qualified

e0

260

.000005 Amp

70 ns

S71WS064JB0BFI2A1

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

80

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

60 mA

1.8

FLASH+PSRAM

1.8

GRID ARRAY, FINE PITCH

BGA80,8X10,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

BOTTOM

R-PBGA-B80

Not Qualified

.00005 Amp

55 ns

S71WS064JA0BAI2A1

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

80

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

60 mA

1.8

FLASH+PSRAM

1.8

GRID ARRAY, FINE PITCH

BGA80,8X10,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

BOTTOM

R-PBGA-B80

Not Qualified

.00005 Amp

55 ns

S27KS0641DABHI030

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

24

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

8

GRID ARRAY, VERY THIN PROFILE

1 mm

85 Cel

8MX8

8M

-40 Cel

BOTTOM

R-PBGA-B24

1.95 V

1 mm

6 mm

67108864 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

S98GL064NB0HI0072

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

56

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

4194304 words

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

4MX16

4M

-40 Cel

BOTTOM

R-PBGA-B56

3.6 V

1.2 mm

7 mm

67108864 bit

2.7 V

PSEUDO STATIC RAM IS ORGANISED AS 2M X 16

NOT SPECIFIED

NOT SPECIFIED

9 mm

AM49DL322BGB70IT

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

73

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

40 mA

3

FLASH+PSRAM

3

GRID ARRAY, FINE PITCH

BGA73,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B73

3

Not Qualified

e0

260

.000005 Amp

70 ns

AM49DL323BGB85IT

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

73

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

40 mA

3

FLASH+PSRAM

3

GRID ARRAY, FINE PITCH

BGA73,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B73

3

Not Qualified

e0

260

.000005 Amp

85 ns

AM49DL324BGT70IS

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

73

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

40 mA

3

FLASH+PSRAM

3

GRID ARRAY, FINE PITCH

BGA73,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B73

3

Not Qualified

e0

260

.000005 Amp

70 ns

S27KS0641DABHV030

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

24

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

8

GRID ARRAY, VERY THIN PROFILE

1 mm

105 Cel

8MX8

8M

-40 Cel

BOTTOM

R-PBGA-B24

1.95 V

1 mm

6 mm

67108864 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

S27KS0641DABHB030

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

24

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

SYNCHRONOUS

8388608 words

1.8

8

GRID ARRAY, VERY THIN PROFILE

1 mm

105 Cel

8MX8

8M

-40 Cel

BOTTOM

R-PBGA-B24

1.95 V

1 mm

6 mm

67108864 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

S71WS128JB0BAIAA1

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

84

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

60 mA

1.8

FLASH+PSRAM

1.8

GRID ARRAY, FINE PITCH

BGA84,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

BOTTOM

R-PBGA-B84

Not Qualified

.00005 Amp

55 ns

S27KL0641DABHV033

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

24

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

3

8

GRID ARRAY, VERY THIN PROFILE

1 mm

105 Cel

8MX8

8M

-40 Cel

BOTTOM

R-PBGA-B24

3

3.6 V

1 mm

6 mm

67108864 bit

2.7 V

8 mm

S71WS256JC0BFIT61

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

84

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

60 mA

1.8

FLASH+PSRAM

1.8

GRID ARRAY, FINE PITCH

BGA84,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

BOTTOM

R-PBGA-B84

Not Qualified

.00005 Amp

55 ns

S71WS256JC0BAITA1

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

84

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

60 mA

1.8

FLASH+PSRAM

1.8

GRID ARRAY, FINE PITCH

BGA84,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

BOTTOM

R-PBGA-B84

Not Qualified

.00005 Amp

55 ns

S71WS128JC0BFIA61

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

84

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

60 mA

1.8

FLASH+PSRAM

1.8

GRID ARRAY, FINE PITCH

BGA84,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

BOTTOM

R-PBGA-B84

Not Qualified

.00005 Amp

55 ns

S27KL0641DABHI023

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

24

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

3

8

GRID ARRAY, VERY THIN PROFILE

1 mm

85 Cel

8MX8

8M

-40 Cel

BOTTOM

R-PBGA-B24

3

3.6 V

1 mm

6 mm

67108864 bit

2.7 V

8 mm

S27KL0641DABHV030

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

24

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

3

8

GRID ARRAY, VERY THIN PROFILE

1 mm

105 Cel

8MX8

8M

-40 Cel

BOTTOM

R-PBGA-B24

3

3.6 V

1 mm

6 mm

67108864 bit

2.7 V

8 mm

S71WS128JC0BAIA61

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

84

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

60 mA

1.8

FLASH+PSRAM

1.8

GRID ARRAY, FINE PITCH

BGA84,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

BOTTOM

R-PBGA-B84

Not Qualified

.00005 Amp

55 ns

AM49DL323BGT70IS

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

73

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

40 mA

3

FLASH+PSRAM

3

GRID ARRAY, FINE PITCH

BGA73,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B73

3

Not Qualified

e0

260

.000005 Amp

70 ns

FM25V10-PG

Infineon Technologies

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SYNCHRONOUS

131072 words

8

85 Cel

128KX8

128K

-40 Cel

PURE TIN

DUAL

R-PDIP-T8

1

3.6 V

1048576 bit

2 V

260

AM49DL322BGT85IS

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

73

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

40 mA

3

FLASH+PSRAM

3

GRID ARRAY, FINE PITCH

BGA73,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B73

3

Not Qualified

e0

260

.000005 Amp

85 ns

S27KL0641DABHI030

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

24

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

3

8

GRID ARRAY, VERY THIN PROFILE

1 mm

85 Cel

8MX8

8M

-40 Cel

BOTTOM

R-PBGA-B24

3

3.6 V

1 mm

6 mm

67108864 bit

2.7 V

8 mm

S71WS256JC0BFITA1

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

84

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

60 mA

1.8

FLASH+PSRAM

1.8

GRID ARRAY, FINE PITCH

BGA84,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

BOTTOM

R-PBGA-B84

Not Qualified

.00005 Amp

55 ns

AM49DL324BGT85IS

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

73

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

40 mA

3

FLASH+PSRAM

3

GRID ARRAY, FINE PITCH

BGA73,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B73

3

Not Qualified

e0

260

.000005 Amp

85 ns

S27KS0641DABHV033

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

24

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

8

GRID ARRAY, VERY THIN PROFILE

1 mm

105 Cel

8MX8

8M

-40 Cel

BOTTOM

R-PBGA-B24

1.95 V

1 mm

6 mm

67108864 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

AM49DL323BGT85IT

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

73

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

40 mA

3

FLASH+PSRAM

3

GRID ARRAY, FINE PITCH

BGA73,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B73

3

Not Qualified

e0

260

.000005 Amp

85 ns

S27KL0641DABHA030

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

24

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

SYNCHRONOUS

8388608 words

3

8

GRID ARRAY, VERY THIN PROFILE

1 mm

85 Cel

8MX8

8M

-40 Cel

BOTTOM

R-PBGA-B24

3

3.6 V

1 mm

6 mm

67108864 bit

2.7 V

8 mm

S71VS064RB0AHT8M3

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

52

PLASTIC/EPOXY

YES

CMOS

1.8

FLASH+PSRAM

1.8

BGA52,6X10,20

Other Memory ICs

85 Cel

-40 Cel

Not Qualified

S27KS0641DABHB033

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

24

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

SYNCHRONOUS

8388608 words

1.8

8

GRID ARRAY, VERY THIN PROFILE

1 mm

105 Cel

8MX8

8M

-40 Cel

BOTTOM

R-PBGA-B24

1.95 V

1 mm

6 mm

67108864 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

AM49DL324BGB85IS

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

73

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

40 mA

3

FLASH+PSRAM

3

GRID ARRAY, FINE PITCH

BGA73,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B73

3

Not Qualified

e0

260

.000005 Amp

85 ns

S71WS064JB0BFI2Y0

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

80

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

60 mA

1.8

FLASH+PSRAM

1.8

GRID ARRAY, FINE PITCH

BGA80,8X10,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

BOTTOM

R-PBGA-B80

Not Qualified

.00005 Amp

55 ns

AM49DL324BGB70IT

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

73

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

40 mA

3

FLASH+PSRAM

3

GRID ARRAY, FINE PITCH

BGA73,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B73

3

Not Qualified

e0

260

.000005 Amp

70 ns

S71WS128JB0BAIAY0

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

84

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

60 mA

1.8

FLASH+PSRAM

1.8

GRID ARRAY, FINE PITCH

BGA84,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

BOTTOM

R-PBGA-B84

Not Qualified

.00005 Amp

55 ns

S27KS0641DPBHB020

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

24

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

SYNCHRONOUS

8388608 words

1.8

8

GRID ARRAY, VERY THIN PROFILE

1 mm

105 Cel

8MX8

8M

-40 Cel

BOTTOM

R-PBGA-B24

1.95 V

1 mm

6 mm

67108864 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

AM49DL322BGB85IT

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

73

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

40 mA

3

FLASH+PSRAM

3

GRID ARRAY, FINE PITCH

BGA73,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B73

3

Not Qualified

e0

260

.000005 Amp

85 ns

S71WS064JB0BAI2Y3

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

80

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

60 mA

1.8

FLASH+PSRAM

1.8

GRID ARRAY, FINE PITCH

BGA80,8X10,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

BOTTOM

R-PBGA-B80

Not Qualified

.00005 Amp

55 ns

S98GL064NB0HI0082

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

56

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

4194304 words

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

4MX16

4M

-40 Cel

BOTTOM

R-PBGA-B56

3.6 V

1.2 mm

7 mm

67108864 bit

2.7 V

PSEUDO STATIC RAM IS ORGANISED AS 2M X 16

NOT SPECIFIED

NOT SPECIFIED

9 mm

S71WS128JB0BAIAY3

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

84

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

60 mA

1.8

FLASH+PSRAM

1.8

GRID ARRAY, FINE PITCH

BGA84,10X12,32

Other Memory ICs

.8 mm

85 Cel

-40 Cel

BOTTOM

R-PBGA-B84

Not Qualified

.00005 Amp

55 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.