INDUSTRIAL Other Function Memory ICs 1,153

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
K5A3380YTC-T8550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 1M X 8 / 512K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8			11 mm
K5A3240YTB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM		.00001 Amp	11 mm	80 ns
K5A3380YTC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		50 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69				Not Qualified					.000015 Amp		70 ns
K5A3340YTA-T970	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM			11 mm
KAD060300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69				Not Qualified					.00002 Amp		70 ns
KS74HCTLS670J	Samsung		INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE					5		5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	85 Cel				-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16				Not Qualified				e0
KAD050300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69				Not Qualified					.00002 Amp		70 ns
K1B1616B8B-BI70T	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			1048576 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel		BOTTOM	R-PBGA-B54				Not Qualified	16777216 bit						70 ns
K5C6417YBM-T355	Samsung	MEMORY CIRCUIT	INDUSTRIAL	81	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B81	3.3 V	1.2 mm	10.4 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 1M X 16 BIT FULL CMOS SRAM			10.8 mm
K5A3240YBA-T370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM			11 mm
K5A3240YBC-T7550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 8 / 256K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8			11 mm
K5A3280YTB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM		.000015 Amp	11 mm	80 ns
K5A3340YBB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM		.00001 Amp	11 mm	70 ns
KS74HCTLS670D	Samsung		INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING					5		5		SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	85 Cel				-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G16				Not Qualified				e0
KAD100300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69				Not Qualified					.00002 Amp		70 ns
K5A3380YTB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM		.000015 Amp	11 mm	70 ns
K1B2816B2A-KI1700	Samsung		INDUSTRIAL							CMOS			35 mA	8388608 words	COMMON	1.8		1.8	16		WAFER	Other Memory ICs		85 Cel	3-STATE	8MX16	8M	-40 Cel							Not Qualified	134217728 bit				.00001 Amp		70 ns
KAD070300B-TNNL0	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B69	3.1 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	UTRAM IS ORGANIZED AS 2M X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 8M X 8			11.6 mm
K1S3216BCC-FI70	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words	COMMON			1.8/2	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B48				Not Qualified	33554432 bit				.0001 Amp		70 ns
K5A3B41YTA-K870	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM			11 mm
K5A3240YBA-T970	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM			11 mm
K5A3240YBB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM		.00001 Amp	11 mm	80 ns
KAD080300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69				Not Qualified					.00002 Amp		70 ns
K5A3A41YTA-K970	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM			11 mm
KAD050300B-TNNL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69				Not Qualified					.00002 Amp		80 ns
K1B2816B2A-WI700	Samsung		INDUSTRIAL							CMOS			35 mA	8388608 words	COMMON	1.8		1.8	16		WAFER	Other Memory ICs		85 Cel	3-STATE	8MX16	8M	-40 Cel							Not Qualified	134217728 bit				.00001 Amp		70 ns
K1S32161CC-FI70T	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	2097152 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B48				Not Qualified	33554432 bit				.0001 Amp		70 ns
K5P2881BCM-F0700	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		16777216 words		2.6			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B69	2.9 V	1.2 mm	8 mm	Not Qualified	134217728 bit	2.4 V	SRAM IS ORGANIZED AS 512K X 16			11 mm
K1S32161CC-BI70T	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	2097152 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B48				Not Qualified	33554432 bit				.0001 Amp		70 ns
K5A3380YTA-T955	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM			11 mm
KAD080300B-TNNL0	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B69	3.1 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	UTRAM IS ORGANIZED AS 2M X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 8M X 8			11.6 mm
K1B2816B2A-KI2700	Samsung		INDUSTRIAL							CMOS			35 mA	8388608 words	COMMON	1.8		1.8	16		WAFER	Other Memory ICs		85 Cel	3-STATE	8MX16	8M	-40 Cel							Not Qualified	134217728 bit				.00001 Amp		70 ns
KS74AHCT670N	Samsung		INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE					5		5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	85 Cel				-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16				Not Qualified				e0
K5A3240YBA-T870	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM			11 mm
K1B3216BDD-BI70	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B54				Not Qualified	33554432 bit				.0001 Amp		70 ns
K1B6416B2D-FI70T	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B54				Not Qualified	67108864 bit				.00012 Amp		70 ns
K5A3340YTA-T370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM			11 mm
K5A3280YTB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM		.000015 Amp	11 mm	70 ns
K5A3380YBB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM		.000015 Amp	11 mm	80 ns
KS74AHCT670D	Samsung		INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING					5		5		SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	85 Cel				-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G16				Not Qualified				e0
K5A3340YBC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69				Not Qualified					.00001 Amp		70 ns
K5A3240YBC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69				Not Qualified					.00001 Amp		80 ns
K5A3240YTA-T970	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM			11 mm
K5A3280YBC-T8550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 1M X 8 / 512K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8			11 mm
KS74HCTLS670N	Samsung		INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE					5		5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	85 Cel				-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T16				Not Qualified				e0
KAD100300B-TLLL0	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B69	3.1 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	UTRAM IS ORGANIZED AS 2M X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 8M X 8			11.6 mm
K1B1616BDB-FI70T	Samsung		INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			1048576 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel		BOTTOM	R-PBGA-B54				Not Qualified	16777216 bit						70 ns
K5A3240YTB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM		.00001 Amp	11 mm	70 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.