Samsung Other Function Memory ICs 497

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
KS74HCTLS670J	Samsung		INDUSTRIAL	16	DIP		RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE						5		5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	85 Cel					-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16						Not Qualified				e0
KBC00B7A0M-D405	Samsung	MEMORY CIRCUIT	OTHER	111	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		45 mA					FLASH+PSRAM+SRAM	3/3.3		GRID ARRAY, FINE PITCH	BGA111,12X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B111						Not Qualified						.000015 Amp		70 ns
KAD050300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.00002 Amp		70 ns
KMM374S203BTN-G0	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1440 mA	2097152 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	65 Cel	3-STATE	2MX72	2M	3 V	0 Cel		DUAL	R-PDMA-N168				100 MHz		Not Qualified	150994944 bit					.0045 Amp		7 ns
KAG00E007M-FGGV0	Samsung	MEMORY CIRCUIT	OTHER	107	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M		-25 Cel		BOTTOM	R-PBGA-B107		1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 4M X 16 X 4 BANKS; NAND FLASH SUPPLY 1.7 V TO 1.95 V				13 mm
KMM374S1620AT-G2	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1980 mA	16777216 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		0 Cel		DUAL	R-PDMA-N168				83 MHz		Not Qualified	1207959552 bit					.036 Amp		8 ns
KMM372V3200AS2-6	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2620 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			50.8 mm			Not Qualified	2415919104 bit					.03 Amp		60 ns
K1B1616B8B-BI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			1048576 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel		BOTTOM	R-PBGA-B54						Not Qualified	16777216 bit							70 ns
K5C6417YBM-T355	Samsung	MEMORY CIRCUIT	INDUSTRIAL	81	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B81		3.3 V	1.2 mm		10.4 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 1M X 16 BIT FULL CMOS SRAM				10.8 mm
K5A3240YBA-T370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM				11 mm
K5A3240YBC-T7550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 8 / 256K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8				11 mm
K5A3280YTB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM			.000015 Amp	11 mm	80 ns
KMM374S400BTN-G0	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2700 mA	4194304 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel		DUAL	R-PDMA-N168				100 MHz		Not Qualified	301989888 bit					.009 Amp		7 ns
M474B5173BH0-YF8	Samsung		OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1170 mA	536870912 words		COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM204,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	512MX72	512M		0 Cel		DUAL	R-PDMA-N204				533 MHz		Not Qualified	38654705664 bit					.135 Amp
K5D5657DCM-F015	Samsung	MEMORY CIRCUIT	OTHER	107	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		65 mA					FLASH+SDRAM	1.8,2.65		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B107						Not Qualified						.00005 Amp		45 ns
KAB04D100M-TNGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words			2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M		-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm		8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16				12 mm
KMM372V3280AK2-6	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2620 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			50.8 mm			Not Qualified	2415919104 bit					.03 Amp		60 ns
K5A3340YBB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM			.00001 Amp	11 mm	70 ns
K5S3216Y0M-T010	Samsung	MEMORY CIRCUIT	OTHER	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-25 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		9 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 1M X 16 BIT FULL CMOS SRAM				12.5 mm
KS74HCTLS670D	Samsung		INDUSTRIAL	16	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING						5		5		SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	85 Cel					-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G16						Not Qualified				e0
KBB06A500M-T402	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		45 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B80						Not Qualified						.00002 Amp		70 ns
KBE00S009M-D4110	Samsung	MEMORY CIRCUIT	OTHER	137	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M		-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B137	2	1.95 V	1.43 mm		12 mm	Not Qualified	268435456 bit	1.7 V	NAND FLASH IS ORGANIZED AS 128M X 8; NAND FLASH OPERATES AT 2.5V TO 2.9V SUPPLY	e1			14 mm
M393T2950CZ0-CCC	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		4760 mA	134217728 words		COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M		0 Cel		DUAL	R-PDMA-N240				200 MHz		Not Qualified	9663676416 bit					.76 Amp		.6 ns
KAD100300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.00002 Amp		70 ns
M474B1G73BH0-YH9	Samsung		OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1665 mA	1073741824 words		COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM204,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	1GX72	1G		0 Cel		DUAL	R-PDMA-N204				667 MHz		Not Qualified	77309411328 bit					.27 Amp		.255 ns
K5T6432YTM-T310	Samsung	MEMORY CIRCUIT	OTHER	81	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	200 mA	4194304 words			3	FLASH+PSRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA81,12X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M		-25 Cel		BOTTOM	R-PBGA-B81		3.3 V	1.2 mm		10.4 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 2M X 16 BIT UTRAM			.000005 Amp	10.8 mm	100 ns
K5A3380YTB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM			.000015 Amp	11 mm	70 ns
KM658512T-12	Samsung			32	TSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			524288 words	YES	COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	Other Memory ICs	1.27 mm		3-STATE	512KX8	512K	4.5 V		Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32						Not Qualified	4194304 bit			e0				120 ns
KMM374S1600AT-G0	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2250 mA	16777216 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		0 Cel		DUAL	R-PDMA-N168				100 MHz		Not Qualified	1207959552 bit					.036 Amp		7 ns
K1B2816B2A-KI1700	Samsung		INDUSTRIAL								CMOS			35 mA	8388608 words		COMMON	1.8		1.8	16		WAFER	Other Memory ICs		85 Cel	3-STATE	8MX16	8M		-40 Cel									Not Qualified	134217728 bit					.00001 Amp		70 ns
KM658512T-8	Samsung			32	TSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			524288 words	YES	COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	Other Memory ICs	1.27 mm		3-STATE	512KX8	512K	4.5 V		Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32						Not Qualified	4194304 bit			e0				80 ns
KMM374S400BTN-G2	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2340 mA	4194304 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel		DUAL	R-PDMA-N168				83 MHz		Not Qualified	301989888 bit					.009 Amp		8 ns
KAD070300B-TNNL0	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words			2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B69		3.1 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	UTRAM IS ORGANIZED AS 2M X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 8M X 8				11.6 mm
K1S3216BCC-FI70	Samsung		INDUSTRIAL	48	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words		COMMON			1.8/2	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48						Not Qualified	33554432 bit					.0001 Amp		70 ns
KBB05B400M-F4020	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M		-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm		8 mm	Not Qualified	268435456 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 4M X 16				13 mm
K5A3B41YTA-K870	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM				11 mm
K5A3240YBA-T970	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM				11 mm
KM658512T-10	Samsung			32	TSOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			524288 words	YES	COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	Other Memory ICs	1.27 mm		3-STATE	512KX8	512K	4.5 V		Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32						Not Qualified	4194304 bit			e0				100 ns
KBE00D002M-F4070	Samsung	MEMORY CIRCUIT	OTHER	137	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M		-25 Cel		BOTTOM	R-PBGA-B137		1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS				13 mm
K5A3240YBB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM			.00001 Amp	11 mm	80 ns
KAD080300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.00002 Amp		70 ns
K5A3A41YTA-K970	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM				11 mm
KMM372V3200AS2-5	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2800 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			50.8 mm			Not Qualified	2415919104 bit					.03 Amp		50 ns
KAD050300B-TNNL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.00002 Amp		80 ns
KBE00F005A-D411	Samsung	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		20 mA				2.7	FLASH+SDRAM	2.7		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel	MATTE TIN	BOTTOM	R-PBGA-B137	1					Not Qualified				e3		.001 Amp		30 ns
M392T5663DZA-CF7	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3820 mA	268435456 words		COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M		0 Cel		DUAL	R-PDMA-N240				400 MHz		Not Qualified	19327352832 bit				260			.4 ns
KMM374S1603AT-G2	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1305 mA	16777216 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		0 Cel		DUAL	R-PDMA-N168				83 MHz		Not Qualified	1207959552 bit					.036 Amp		8 ns
KBE00500AM-D437	Samsung	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		20 mA				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B137						Not Qualified						.001 Amp		30 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.