Samsung Other Function Memory ICs 497

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
K1B1616BDB-FI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			1048576 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	BOTTOM	R-PBGA-B54						Not Qualified	16777216 bit						70 ns
K5A3240YTB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M		-40 Cel	BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM		.00001 Amp	11 mm	70 ns
K1S32161CD-BI70T	Samsung		INDUSTRIAL	48	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words		COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel	BOTTOM	R-PBGA-B48						Not Qualified	33554432 bit				.0001 Amp		70 ns
K5N1229ACD-BQ120	Samsung	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		32MX16	32M		-25 Cel	BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		8 mm		536870912 bit	1.7 V	SRAM IS ORGANISED AS 8M X 16			9.2 mm
K1B2816B2A-WI3700	Samsung		INDUSTRIAL								CMOS			35 mA	8388608 words		COMMON	1.8		1.8	16		WAFER	Other Memory ICs		85 Cel	3-STATE	8MX16	8M		-40 Cel								Not Qualified	134217728 bit				.00001 Amp		70 ns
KBB05A300M-T402	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel	BOTTOM	R-PBGA-B80						Not Qualified					.00002 Amp		70 ns
KAB01D100M-TNGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel	BOTTOM	R-PBGA-B80						Not Qualified					.00001 Amp		85 ns
KAL00B00BM-FGXX0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M		-25 Cel	BOTTOM	R-PBGA-B127		1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 4M X 8 X 4 BANKS; NAND FLASH SUPPLY 1.7 V TO 1.95 V			12 mm
KMM372F3280AK2-5	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2800 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel	DUAL	R-PDMA-N168			50.8 mm			Not Qualified	2415919104 bit				.03 Amp		50 ns
KAD050300B-TNNL0	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words			2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M		-40 Cel	BOTTOM	R-PBGA-B69		3.1 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	UTRAM IS ORGANIZED AS 2M X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 8M X 8			11.6 mm
K5A3280YTA-T955	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel	BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM			11 mm
K5P2880YCM-T085	Samsung	MEMORY CIRCUIT	OTHER	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	30 mA	16777216 words			3	FLASH+SRAM	3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		16MX8	16M		-25 Cel	BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM		.000005 Amp	13 mm	10000 ns
M392T5663DZA-CE6	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3435 mA	268435456 words		COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M		0 Cel	DUAL	R-PDMA-N240				333 MHz		Not Qualified	19327352832 bit			260			.45 ns
K5A3340YTC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		77 mA				3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel	BOTTOM	S-PBGA-B69						Not Qualified					.00001 Amp		70 ns
K1S321615A-E	Samsung		OTHER	48	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words		COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	BOTTOM	R-PBGA-B48						Not Qualified	33554432 bit				.00001 Amp		85 ns
KM424C256AZ12	Samsung
KAB01D100M-TLGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel	BOTTOM	R-PBGA-B80						Not Qualified					.00001 Amp		85 ns
K1C6416B8D-FI700	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	BOTTOM	R-PBGA-B54	3					Not Qualified	67108864 bit			240	.00003 Amp		70 ns
KBB05A500M-T4020	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words			2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M		-25 Cel	BOTTOM	R-PBGA-B80		3.1 V	1.4 mm		8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 4M X 16			13 mm
M391T5663AZ3-CCC00	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2700 mA	268435456 words		COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M		0 Cel	DUAL	R-PDMA-N240				200 MHz		Not Qualified	19327352832 bit				.27 Amp		.6 ns
M392T2863DZA-CF7	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3030 mA	134217728 words		COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M		0 Cel	DUAL	R-PDMA-N240				400 MHz		Not Qualified	9663676416 bit			260	.135 Amp		.4 ns
KMM372F3200AK3-7	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2440 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel	DUAL	R-PDMA-N168			41.91 mm			Not Qualified	2415919104 bit				.03 Amp		70 ns
KMM372V3200AK3-6	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2620 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel	DUAL	R-PDMA-N168			41.91 mm			Not Qualified	2415919104 bit				.03 Amp		60 ns
KAG00H008M-FGG2	Samsung	MEMORY CIRCUIT	OTHER	107	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA				3.3	FLASH+SDRAM	3.3		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel	BOTTOM	R-PBGA-B107						Not Qualified					.00005 Amp
K1S161615M-EI70	Samsung		INDUSTRIAL	48	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	1048576 words		COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	2.7 V	-40 Cel	BOTTOM	R-PBGA-B48						Not Qualified	16777216 bit				.000015 Amp		70 ns
M392T5663DZA-CCC	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2935 mA	268435456 words		COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M		0 Cel	DUAL	R-PDMA-N240				200 MHz		Not Qualified	19327352832 bit			260			.6 ns
K5A3280YBB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M		-40 Cel	BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM		.000015 Amp	11 mm	80 ns
KAA00B606A-TGPX0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M		-25 Cel	BOTTOM	R-PBGA-B127		1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS; UTRAM IS ORGANIZED AS 4M X 16			12 mm
KMM372V3280AK3-6	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2620 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel	DUAL	R-PDMA-N168			41.91 mm			Not Qualified	2415919104 bit				.03 Amp		60 ns
K5A3240YTC-T8550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel	BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 8 / 256K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8			11 mm
K5P5781FCM-F0550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		16777216 words			2.65			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M		-40 Cel	BOTTOM	R-PBGA-B69		2.9 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.4 V	SRAM IS ORGANIZED AS 512K X 16			11 mm
M372V3280BB4-C600	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1540 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel	DUAL	R-PDMA-N168			50.8 mm			Not Qualified	2415919104 bit				.03 Amp		60 ns
M372V0404BF0-C600	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		600 mA	4194304 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel	DUAL	R-PDMA-N168			25.4 mm			Not Qualified	301989888 bit				.03 Amp		60 ns
M372F0410CW0-60	Samsung		COMMERCIAL	168	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1800 mA	4194304 words	NO	COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel	DUAL	R-PDMA-N168			25.4 mm			Not Qualified	301989888 bit				.03 Amp		60 ns
KLMBG4GE2A-A001	Samsung	MEMORY CIRCUIT
M395T5160CZ4-CD52	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			536870912 words		COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M		0 Cel	DUAL	R-PDMA-N240						Not Qualified	38654705664 bit
K5A3280YTC-T7550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel	BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 1M X 8 / 512K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8			11 mm
K1B6416B2D-BI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	BOTTOM	R-PBGA-B54						Not Qualified	67108864 bit				.00012 Amp		70 ns
M391B5673GB0-YH9	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1233 mA	268435456 words		COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M		0 Cel	DUAL	R-PDMA-N240				667 MHz		Not Qualified	19327352832 bit				.18 Amp		.255 ns
K5A3380YBC-T7550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel	BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 1M X 8 / 512K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8			11 mm
KMM372V3200AK2-5	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2800 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel	DUAL	R-PDMA-N168			50.8 mm			Not Qualified	2415919104 bit				.03 Amp		50 ns
M474B5173BH0-YK0	Samsung		OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1530 mA	536870912 words		COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM204,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	512MX72	512M		0 Cel	DUAL	R-PDMA-N204				800 MHz		Not Qualified	38654705664 bit				.135 Amp
M391T5663AZ3-CD500	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2925 mA	268435456 words		COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M		0 Cel	DUAL	R-PDMA-N240				267 MHz		Not Qualified	19327352832 bit				.27 Amp		.5 ns
K5A3380YTA-T355	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel	BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM			11 mm
M395T2953EZ4-CD52	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3050 mA	134217728 words		COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M		0 Cel	DUAL	R-PDMA-N240				266 MHz		Not Qualified	9663676416 bit
KMM374S1603AT-G8	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1800 mA	16777216 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		0 Cel	DUAL	R-PDMA-N168				125 MHz		Not Qualified	1207959552 bit				.036 Amp		6 ns
KAB02D100M-TLGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words			2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M		-25 Cel	BOTTOM	R-PBGA-B80		3.1 V	1.4 mm		8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16			12 mm
K1B6416B2D-BI700	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	BOTTOM	R-PBGA-B54						Not Qualified	67108864 bit				.00012 Amp		70 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.