Samsung Other Function Memory ICs 497

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
KA100O015E-BJTT0	Samsung	MEMORY CIRCUIT	OTHER	137	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M	-25 Cel		BOTTOM	R-PBGA-B137		1.95 V	1.2 mm		10.5 mm		1073741824 bit	1.7 V	SRAM IS ORGANISED AS 64M X 32 PLUS 64M X 32				13 mm
M392B1K73CM0-YH9	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3275 mA	1073741824 words		COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	R-PDMA-N240				667 MHz		Not Qualified	77309411328 bit				260	1.042 Amp		.255 ns
K5L5628JTM-DH180	Samsung	MEMORY CIRCUIT	OTHER	115	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-30 Cel		BOTTOM	R-PBGA-B115		1.95 V	1.4 mm		8 mm	Not Qualified	268435456 bit	1.7 V					12 mm
K5A3B41YBA-K370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM				11 mm
KMM374S1603BTL-GH	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1170 mA	16777216 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL	R-PDMA-N168				100 MHz		Not Qualified	1207959552 bit					.018 Amp		6 ns
K1C6416B2D-BI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B54	3					Not Qualified	67108864 bit				260	.00003 Amp		70 ns
M372F0804BF0-C500	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		760 mA	8388608 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M	0 Cel		DUAL	R-PDMA-N168			25.4 mm			Not Qualified	603979776 bit					.03 Amp		50 ns
K5A3280YBB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM			.000015 Amp	11 mm	70 ns
KBB06B400M-F402	Samsung	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		50 mA					FLASH+PSRAM	2.9,3,3.3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	R-PBGA-B80						Not Qualified						.000001 Amp		70 ns
M372F0400CW0-50	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1620 mA	4194304 words	NO	COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M	0 Cel		DUAL	R-PDMA-N168						Not Qualified	301989888 bit					.03 Amp		50 ns
K5A3240YTC-T7550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 8 / 256K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8				11 mm
M372F0404BF0-C600	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		600 mA	4194304 words	NO	COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M	0 Cel		DUAL	R-PDMA-N168						Not Qualified	301989888 bit					.03 Amp		60 ns
K5D1G13ACD-D075	Samsung	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		20 mA				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B137						Not Qualified						.001 Amp		30 ns
KAL00B00BM-FGVV0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B127		1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 4M X 8 X 4 BANKS; NAND FLASH SUPPLY 1.7 V TO 1.95 V				12 mm
KAB03D100M-TNGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B80						Not Qualified						.00001 Amp		85 ns
M372F0400CZ0-50	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1620 mA	4194304 words	NO	COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M	0 Cel		DUAL	R-PDMA-N168						Not Qualified	301989888 bit					.03 Amp		50 ns
K5S3216Y0A-T385	Samsung	MEMORY CIRCUIT	OTHER	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	2097152 words			2.9	PSRAM+SRAM	2.9	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B69		3.1 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 1M X 16 BIT FULL CMOS SRAM			.00001 Amp	11 mm	85 ns
KM4232W259Q-80	Samsung	VIDEO DRAM	COMMERCIAL	120	QFP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		170 mA	262144 words			5		5	32	FLATPACK	QFP120,.63X.87,20	Other Memory ICs	.5 mm	70 Cel		256KX32	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	R-PQFP-G120						Not Qualified	8388608 bit			e0		.01 Amp		80 ns
M393T5750CZ0-CD5	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		6420 mA	268435456 words		COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	R-PDMA-N240				267 MHz		Not Qualified	19327352832 bit							.5 ns
KM4216V256-7	Samsung
KBE00S003M-D4110	Samsung	MEMORY CIRCUIT	OTHER	107	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words			1.8			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		32MX8	32M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B107	2	1.95 V	1.4 mm		12 mm	Not Qualified	268435456 bit	1.7 V	NAND FLASH IS ORGANIZED AS 128M X 8; NAND FLASH OPERATES AT 2.5V TO 2.9V SUPPLY	e1			14 mm
K5L5628JBM-DH180	Samsung	MEMORY CIRCUIT	OTHER	115	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B115	2	1.95 V	1.4 mm		8 mm	Not Qualified	268435456 bit	1.7 V		e1			12 mm
K5A3280YBC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		50 mA				3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.000015 Amp		70 ns
KMM372F3280AS3-7	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2440 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	R-PDMA-N168			41.91 mm			Not Qualified	2415919104 bit					.03 Amp		70 ns
KMM374S823AT-G8	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1530 mA	8388608 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M	0 Cel		DUAL	R-PDMA-N168				125 MHz		Not Qualified	603979776 bit					.018 Amp		6 ns
K1S6416BCD-BI70	Samsung		INDUSTRIAL	48	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B48						Not Qualified	67108864 bit					.00012 Amp		70 ns
KAD060300B-TNNL0	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words			2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B69		3.1 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	UTRAM IS ORGANIZED AS 2M X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 8M X 8				11.6 mm
M391B5273CH0-YF8	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1710 mA	536870912 words		COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	R-PDMA-N240				533 MHz		Not Qualified	38654705664 bit				260
K1B1616BDB-FI700	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			1048576 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel		BOTTOM	R-PBGA-B54						Not Qualified	16777216 bit							70 ns
KAD070300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.00002 Amp		70 ns
M391B5273CH0-YH9	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2025 mA	536870912 words		COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	R-PDMA-N240				667 MHz		Not Qualified	38654705664 bit				260
M372E0803BT0-C5	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1080 mA	8388608 words		COMMON	5		5	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M	0 Cel		DUAL	R-PDMA-N168						Not Qualified	603979776 bit					.03 Amp		50 ns
KMM372F3200AK2-7	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2440 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	R-PDMA-N168			50.8 mm			Not Qualified	2415919104 bit					.03 Amp		70 ns
K1B6416B6C-BI700	Samsung	MEMORY CIRCUIT	INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA				1.85	FLASH+PSRAM	1.85		GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel				-40 Cel		BOTTOM	R-PBGA-B54						Not Qualified						.18 Amp		70 ns
KAD070300B-TLLL0	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words			2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B69		3.1 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	UTRAM IS ORGANIZED AS 2M X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 8M X 8				11.6 mm
KAE00C400M-TGNN0	Samsung	MEMORY CIRCUIT	OTHER	111	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		16777216 words			2.5			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX8	16M	-25 Cel		BOTTOM	R-PBGA-B111		2.7 V	1.4 mm		10 mm	Not Qualified	134217728 bit	2.3 V	UTRAM IS ORGANIZED AS 4M X 16; FLASH OPERATES AT 2.7V TO 3.6V SUPPLY				11 mm
K5D1G13ACD-D075000	Samsung	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		20 mA				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B137						Not Qualified						.001 Amp		30 ns
K5L5628JTM-DH18	Samsung	MEMORY CIRCUIT	OTHER	115	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		70 mA					FLASH+PSRAM	1.8,2.5		GRID ARRAY, FINE PITCH	BGA115,10X14,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel		BOTTOM	R-PBGA-B115						Not Qualified						.00007 Amp		88.5 ns
M393T2950CZ0-CD5	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		5090 mA	134217728 words		COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	R-PDMA-N240				267 MHz		Not Qualified	9663676416 bit					.82 Amp		.5 ns
KMM374S1620AT-G0	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2250 mA	16777216 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL	R-PDMA-N168				100 MHz		Not Qualified	1207959552 bit					.036 Amp		7 ns
K5A3340YTA-T870	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM				11 mm
KAE00C400M-TGNN	Samsung	MEMORY CIRCUIT	OTHER	111	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL							FLASH+PSRAM	2.5,3.3		GRID ARRAY, FINE PITCH	BGA111,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B111						Not Qualified						.00005 Amp		80 ns
K1B2816B2A-KI3700	Samsung		INDUSTRIAL								CMOS			35 mA	8388608 words		COMMON	1.8		1.8	16		WAFER	Other Memory ICs		85 Cel	3-STATE	8MX16	8M	-40 Cel									Not Qualified	134217728 bit					.00001 Amp		70 ns
M372V3200BB4-C500	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2260 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL	R-PDMA-N168			50.8 mm			Not Qualified	2415919104 bit					.03 Amp		50 ns
M395T5160CZ4-CE62	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			536870912 words		COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	R-PDMA-N240						Not Qualified	38654705664 bit
KAB03D100M-TNGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words			2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm		8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16				12 mm
KAL00B00BM-FGVX0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B127		1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 4M X 8 X 4 BANKS; NAND FLASH SUPPLY 1.7 V TO 1.95 V				12 mm
K5T6432YBM-T310	Samsung	MEMORY CIRCUIT	OTHER	81	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	200 mA	4194304 words			3	FLASH+PSRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA81,12X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B81		3.3 V	1.2 mm		10.4 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 2M X 16 BIT UTRAM			.000005 Amp	10.8 mm	100 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.