Samsung Other Function Memory ICs 497

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
KLMBG4GE4A-A001	Samsung	MEMORY CIRCUIT
KMM372V3280AS2-5	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2800 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			50.8 mm			Not Qualified	2415919104 bit					.03 Amp		50 ns
M393T6553CZ0-CCC	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2570 mA	67108864 words		COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	64MX72	64M		0 Cel		DUAL	R-PDMA-N240				200 MHz		Not Qualified	4831838208 bit					.54 Amp		.6 ns
K5A3340YBA-T870	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM				11 mm
K1B3216BDD-FI70	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B54						Not Qualified	33554432 bit					.0001 Amp		70 ns
KAJ000A30M-FLLL	Samsung	MEMORY CIRCUIT	OTHER	111	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	45 mA	4194304 words			2.9	PSRAM+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA111,12X13,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M		-25 Cel		BOTTOM	R-PBGA-B111		3.1 V	1.4 mm		10 mm	Not Qualified	67108864 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16			.00002 Amp	11 mm	70 ns
K5A3340YTB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM			.00001 Amp	11 mm	70 ns
KMM372V3280AS3-7	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2440 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			41.91 mm			Not Qualified	2415919104 bit					.03 Amp		70 ns
M395T6553EZ4-CE62	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3380 mA	67108864 words		COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	64MX72	64M		0 Cel		DUAL	R-PDMA-N240				333 MHz		Not Qualified	4831838208 bit					.451 Amp
KMM372F3200AS2-5	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2800 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			50.8 mm			Not Qualified	2415919104 bit					.03 Amp		50 ns
KMM372F3200AK3-6	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2620 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			41.91 mm			Not Qualified	2415919104 bit					.03 Amp		60 ns
M374S1603AT0-C100	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1485 mA	16777216 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		0 Cel		DUAL	R-PDMA-N168				100 MHz		Not Qualified	1207959552 bit					.036 Amp		7 ns
M372E0883BT0-C6	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		810 mA	8388608 words		COMMON	5		5	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		0 Cel		DUAL	R-PDMA-N168						Not Qualified	603979776 bit					.03 Amp		60 ns
KAL00B00BM-FGXV	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		15 mA				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B127						Not Qualified						.00005 Amp
KLMAG2GE2A-A001	Samsung	MEMORY CIRCUIT
KMM372F124BJ7	Samsung		COMMERCIAL	168	DIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		670 mA	1048576 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	1MX72	1M		0 Cel		DUAL	R-PDMA-N168						Not Qualified	75497472 bit					.03 Amp		70 ns
M372V0803CJT-C60	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		900 mA	8388608 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		0 Cel		DUAL	R-PDMA-N168			31.75 mm			Not Qualified	603979776 bit					.03 Amp		60 ns
KS54AHCT670J	Samsung		MILITARY	16	DIP		RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE						5		5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel					-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16						Not Qualified				e0
KAB02D100M-TLGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B80						Not Qualified						.00001 Amp		85 ns
M395T2953GZ4-CE69	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1960 mA	134217728 words		COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M		0 Cel		DUAL	R-PDMA-N240	3			333 MHz		Not Qualified	9663676416 bit				260
M372F0410CW0-50	Samsung		COMMERCIAL	168	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1980 mA	4194304 words	NO	COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel		DUAL	R-PDMA-N168			25.4 mm			Not Qualified	301989888 bit					.03 Amp		50 ns
M312L6523CZ0-LCC	Samsung		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		4220 mA	67108864 words		COMMON	2.6		2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	64MX72	64M		0 Cel		DUAL	R-PDMA-N184				200 MHz		Not Qualified	4831838208 bit					.42 Amp		.65 ns
KLMBG4GE4A-A001006	Samsung	MEMORY CIRCUIT
KMM374S203BTN-G8	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1620 mA	2097152 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	65 Cel	3-STATE	2MX72	2M	3 V	0 Cel		DUAL	R-PDMA-N168				125 MHz		Not Qualified	150994944 bit					.0045 Amp		6 ns
KM658128ASG-8	Samsung		COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		70 mA	131072 words		COMMON	5		5	8	SMALL OUTLINE	SOP32,.5	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32						Not Qualified	1048576 bit			e0		.001 Amp		80 ns
KMM374S400BTN-G8	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3060 mA	4194304 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel		DUAL	R-PDMA-N168				125 MHz		Not Qualified	301989888 bit					.009 Amp		6 ns
K522H1HACF-B050	Samsung	MEMORY CIRCUIT	OTHER	153	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		25 mA				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel					-25 Cel		BOTTOM	S-PBGA-B153						Not Qualified						.002 Amp
KMM374S203BTN-G2	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1260 mA	2097152 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	65 Cel	3-STATE	2MX72	2M	3 V	0 Cel		DUAL	R-PDMA-N168				83 MHz		Not Qualified	150994944 bit					.0045 Amp		8 ns
K1S32161CE-FI70T	Samsung		INDUSTRIAL	48	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words		COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48	3					Not Qualified	33554432 bit				240	.0001 Amp		70 ns
KM4X6001KM-B3210	Samsung	MEMORY CIRCUIT		254			RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL			34359738368 words				DRAM+NAND		8							32GX8	32G				BOTTOM	R-PBGA-B254							274877906944 bit		DRAM DENSITY IS 16G BITS
K5A3340YTC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		77 mA				3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.00001 Amp		80 ns
K5C6481NTM-T355	Samsung	MEMORY CIRCUIT	INDUSTRIAL	81	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B81		3.3 V	1.2 mm		10.4 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 512K X 16 BIT FULL CMOS SRAM				10.8 mm
K1S6416BCD-FI70T	Samsung		INDUSTRIAL	48	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B48						Not Qualified	67108864 bit					.00012 Amp		70 ns
K1B3216BDD-BI700	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B54						Not Qualified	33554432 bit					.0001 Amp		70 ns
K5A3380YTC-T8550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 1M X 8 / 512K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8				11 mm
KMM372F3200AS2-6	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2620 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			50.8 mm			Not Qualified	2415919104 bit					.03 Amp		60 ns
K5A3240YTB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM			.00001 Amp	11 mm	80 ns
M392B1K73CM0-YF8	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2790 mA	1073741824 words		COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G		0 Cel		DUAL	R-PDMA-N240				533 MHz		Not Qualified	77309411328 bit				260	1.002 Amp		.3 ns
K5A3380YTC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		50 mA				3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.000015 Amp		70 ns
K5A3340YTA-T970	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM				11 mm
KAD060300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.00002 Amp		70 ns
MZ-V7E500BW00000	Samsung	MEMORY CIRCUIT
KMM372F3200AK2-6	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2620 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			50.8 mm			Not Qualified	2415919104 bit					.03 Amp		60 ns
KAA00B209M-TGQX	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA					FLASH+PSRAM+SRAM	1.8,3		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B127						Not Qualified						.00001 Amp		90 ns
KAA00B209M-TGQV	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA					FLASH+PSRAM+SRAM	1.8,3		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B127						Not Qualified						.00001 Amp		90 ns
KBB06A300M-T402	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B80						Not Qualified						.00002 Amp		70 ns
KMM374S803AT-G2	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1035 mA	8388608 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		0 Cel		DUAL	R-PDMA-N168				83 MHz		Not Qualified	603979776 bit					.018 Amp		8 ns
KMM372F3280AS2-7	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2440 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			50.8 mm			Not Qualified	2415919104 bit					.03 Amp		70 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.