Samsung Other Function Memory ICs 497

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
KAA00B209M-TGQX0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M		-25 Cel		BOTTOM	R-PBGA-B127		1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS; UTRAM IS ORGANIZED AS 2M X 16				12 mm
KAB01D100M-TNGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words			2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M		-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm		8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16				12 mm
K1C6416B8D-BI700	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B54	3					Not Qualified	67108864 bit				260	.00003 Amp		70 ns
KMM374S1600AT-G8	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2880 mA	16777216 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		0 Cel		DUAL	R-PDMA-N168				125 MHz		Not Qualified	1207959552 bit					.036 Amp		6 ns
MZ-V7E2T0BW00000	Samsung	MEMORY CIRCUIT
K5P6480YCM-T085	Samsung	MEMORY CIRCUIT	OTHER	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words			3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX8	8M		-25 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	67108864 bit	2.7 V	IT ALSO CONTAINS 1M X 8/512K X 16 SRAM				13 mm
K5A3380YBA-T955	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM				11 mm
KMM372F124BT7	Samsung		COMMERCIAL	168	DIMM	1024	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		670 mA	1048576 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	1MX72	1M		0 Cel		DUAL	R-PDMA-N168						Not Qualified	75497472 bit					.03 Amp		70 ns
KMM372V3200AS3-6	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2620 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			41.91 mm			Not Qualified	2415919104 bit					.03 Amp		60 ns
KAD090300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.00002 Amp		70 ns
M312L6523CZ0-LB3	Samsung		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3990 mA	67108864 words		COMMON	2.5		2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	64MX72	64M		0 Cel		DUAL	R-PDMA-N184				166 MHz		Not Qualified	4831838208 bit					.42 Amp		.7 ns
M372F0404BF0-C500	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		660 mA	4194304 words	NO	COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel		DUAL	R-PDMA-N168						Not Qualified	301989888 bit					.03 Amp		50 ns
KBF080800M-D408	Samsung	MEMORY CIRCUIT	OTHER	115	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		100 mA				1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA115,10X14,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B115						Not Qualified						.00003 Amp		88.5 ns
M395T5263AZ4-CD56	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3500 mA	536870912 words		COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M		0 Cel		DUAL	R-PDMA-N240						Not Qualified	38654705664 bit
KBA0201A0M-T401	Samsung	MEMORY CIRCUIT	INDUSTRIAL	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words			3	FLASH+PSRAM+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA80,9X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B80		3.3 V	1.4 mm		10 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 2M X 16 UTRAM AND 512K X 16 SRAM			.000006 Amp	11 mm	85 ns
KMM374S1603BTL-GL	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1170 mA	16777216 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		0 Cel		DUAL	R-PDMA-N168				100 MHz		Not Qualified	1207959552 bit					.018 Amp		6 ns
KAD060300B-TLLL0	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words			2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B69		3.1 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	UTRAM IS ORGANIZED AS 2M X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 8M X 8				11.6 mm
KMM372F3200AK3-5	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2800 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			41.91 mm			Not Qualified	2415919104 bit					.03 Amp		50 ns
K5A3280YBC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		50 mA				3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.000015 Amp		80 ns
K1C6416B8D-BI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B54	3					Not Qualified	67108864 bit				260	.00003 Amp		70 ns
K5A3280YBA-T355	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM				11 mm
K1S321611C-FI70	Samsung		INDUSTRIAL	48	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words		COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48						Not Qualified	33554432 bit					.0001 Amp		70 ns
K5A3380YTC-T7550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 1M X 8 / 512K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8				11 mm
K5A3340YBB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM			.00001 Amp	11 mm	80 ns
KAB04D100M-TLGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B80						Not Qualified						.00001 Amp		85 ns
K5A3380YBA-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM				11 mm
KMM372V3280AS2-6	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2620 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			50.8 mm			Not Qualified	2415919104 bit					.03 Amp		60 ns
K5A3380YBA-T355	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM				11 mm
K5A3380YBB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM			.000015 Amp	11 mm	70 ns
KMM374S403BTN-G0	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1620 mA	4194304 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M	3 V	0 Cel		DUAL	R-PDMA-N168				100 MHz		Not Qualified	301989888 bit					.009 Amp		7 ns
KMM372F3280AS3-5	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2800 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			41.91 mm			Not Qualified	2415919104 bit					.03 Amp		50 ns
KM424C256P-12	Samsung	VIDEO DRAM	COMMERCIAL	28	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE		95 mA	262144 words			5		5	4	IN-LINE	DIP28,.4	Other Memory ICs	2.54 mm	70 Cel		256KX4	256K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28						Not Qualified	1048576 bit			e0		.005 Amp		120 ns
KM658128SP-8	Samsung		COMMERCIAL	32	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			131072 words		COMMON	5		5	8	IN-LINE	DIP32(UNSPEC)	Other Memory ICs		70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32						Not Qualified	1048576 bit			e0				80 ns
M392T5663DZA-CD5	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3275 mA	268435456 words		COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M		0 Cel		DUAL	R-PDMA-N240				267 MHz		Not Qualified	19327352832 bit				260			.5 ns
KMM374S803AT-G0	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1215 mA	8388608 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		0 Cel		DUAL	R-PDMA-N168				100 MHz		Not Qualified	603979776 bit					.018 Amp		7 ns
KAL00B00BM-FGXV0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M		-25 Cel		BOTTOM	R-PBGA-B127		1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 4M X 8 X 4 BANKS; NAND FLASH SUPPLY 1.7 V TO 1.95 V				12 mm
KBB06A500M-T4020	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words			2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M		-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm		8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 4M X 16				13 mm
KAB04D100M-TNGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B80						Not Qualified						.00001 Amp		85 ns
KAD060300B-TNNL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.00002 Amp		80 ns
KMM372V3280AK2-5	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2800 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			50.8 mm			Not Qualified	2415919104 bit					.03 Amp		50 ns
K5S3216Y0M-T070	Samsung	MEMORY CIRCUIT	OTHER	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-25 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		9 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 1M X 16 BIT FULL CMOS SRAM				12.5 mm
MB-MJ32G	Samsung	MEMORY CIRCUIT	OTHER		DIE		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		34359738368 words						8	UNCASED CHIP				85 Cel		32GX8	32G		-25 Cel		UPPER	R-XUUC-N							274877906944 bit
K1S32161CC-FI700	Samsung		INDUSTRIAL	48	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	2097152 words		COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48						Not Qualified	33554432 bit					.0001 Amp		70 ns
KS74HCTLS670DT	Samsung		INDUSTRIAL	16	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING						5		5		SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	85 Cel					-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G16						Not Qualified				e0
M372F0804BF0-C600	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		700 mA	8388608 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		0 Cel		DUAL	R-PDMA-N168			25.4 mm			Not Qualified	603979776 bit					.03 Amp		60 ns
K5A3240YBC-T8550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 8 / 256K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8				11 mm
M393T5750CZ0-CCC	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		5880 mA	268435456 words		COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M		0 Cel		DUAL	R-PDMA-N240				200 MHz		Not Qualified	19327352832 bit							.6 ns
M392T2863DZA-CD5	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2630 mA	134217728 words		COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M		0 Cel		DUAL	R-PDMA-N240				267 MHz		Not Qualified	9663676416 bit				260	.135 Amp		.5 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.