Samsung Other Function Memory ICs 497

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
M372E0883BJ0-C6	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		810 mA	8388608 words		COMMON	5		5	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		0 Cel		DUAL	R-PDMA-N168						Not Qualified	603979776 bit					.03 Amp		60 ns
K5A3280YTA-T355	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM				11 mm
M374S1620AT0-C120	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1980 mA	16777216 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		0 Cel		DUAL	R-PDMA-N168				83 MHz		Not Qualified	1207959552 bit					.036 Amp		8 ns
KMM372V3200AS3-7	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2440 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			41.91 mm			Not Qualified	2415919104 bit					.03 Amp		70 ns
M372F0400CW0-60	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1440 mA	4194304 words	NO	COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel		DUAL	R-PDMA-N168						Not Qualified	301989888 bit					.03 Amp		60 ns
KMM372V3200AK2-7	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2440 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			50.8 mm			Not Qualified	2415919104 bit					.03 Amp		70 ns
M372E0803BT0-C6	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		990 mA	8388608 words		COMMON	5		5	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		0 Cel		DUAL	R-PDMA-N168						Not Qualified	603979776 bit					.03 Amp		60 ns
K5A3280YTA-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM				11 mm
K5P5781FCM-F055	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		28 mA				2.8	FLASH+SRAM	2.8		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.000001 Amp		55 ns
KAG00H008M-FGG20	Samsung	MEMORY CIRCUIT	OTHER	107	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words			3			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		32MX8	32M		-25 Cel		BOTTOM	R-PBGA-B107		3.6 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	2.7 V	SDRAM IS ORGANIZED AS 4M X 16 X 4 BANKS; NAND FLASH SUPPLY 2.7 V TO 3.3 V				13 mm
KBA0401A0M-T401	Samsung	MEMORY CIRCUIT	INDUSTRIAL	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words			3	FLASH+PSRAM+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA80,9X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B80		3.3 V	1.4 mm		10 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 2M X 16 UTRAM AND 512K X 16 SRAM			.000006 Amp	11 mm	85 ns
K5A3340YBC-T7550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 8 / 256K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8				11 mm
K5A3240YTA-T370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM				11 mm
KAA00B209M-TGSV0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M		-25 Cel		BOTTOM	R-PBGA-B127		1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS; UTRAM IS ORGANIZED AS 2M X 16				12 mm
M395T2953EZ4-CE62	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3380 mA	134217728 words		COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M		0 Cel		DUAL	R-PDMA-N240				333 MHz		Not Qualified	9663676416 bit
M372V3280AF0-C600	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2620 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			59.69 mm			Not Qualified	2415919104 bit					.03 Amp		60 ns
K5A3340YBA-T370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM				11 mm
KAA00B209M-TGQV0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M		-25 Cel		BOTTOM	R-PBGA-B127		1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS; UTRAM IS ORGANIZED AS 2M X 16				12 mm
KM658128ASG-12	Samsung		COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		50 mA	131072 words		COMMON	5		5	8	SMALL OUTLINE	SOP32,.5	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32						Not Qualified	1048576 bit			e0		.001 Amp		120 ns
MB-MJ64G	Samsung	MEMORY CIRCUIT	OTHER		DIE		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		68719476736 words						8	UNCASED CHIP				85 Cel		64GX8	64G		-25 Cel		UPPER	R-XUUC-N							549755813888 bit
K5A3240YTC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		77 mA				3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.00001 Amp		80 ns
KAD090300B-TLLL0	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words			2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B69		3.1 V	1.4 mm		8 mm	Not Qualified	67108864 bit	2.7 V	UTRAM IS ORGANIZED AS 2M X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 8M X 8				11.6 mm
KM658128ASG-10	Samsung		COMMERCIAL	32	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		60 mA	131072 words		COMMON	5		5	8	SMALL OUTLINE	SOP32,.5	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32						Not Qualified	1048576 bit			e0		.001 Amp		100 ns
KMM372V3280AS3-5	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2800 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			41.91 mm			Not Qualified	2415919104 bit					.03 Amp		50 ns
M393B2G70CB0-YH9	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		4170 mA	2147483648 words		COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	2GX72	2G		0 Cel		DUAL	R-PDMA-N240				667 MHz		Not Qualified	154618822656 bit							.255 ns
K1S3216B1C-FI85	Samsung		INDUSTRIAL	48	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		30 mA	2097152 words		COMMON			1.8/2	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48						Not Qualified	33554432 bit					.0001 Amp		85 ns
KAB03D100M-TLGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B80						Not Qualified						.00001 Amp		85 ns
K5A3A41YBA-K970	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM				11 mm
KAA00B209M-TGSX	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA					FLASH+PSRAM+SRAM	1.8,3		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel					-25 Cel		BOTTOM	R-PBGA-B127						Not Qualified						.00001 Amp		100 ns
M372F0410CZ0-50	Samsung		COMMERCIAL	168	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1980 mA	4194304 words	NO	COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel		DUAL	R-PDMA-N168			25.4 mm			Not Qualified	301989888 bit					.03 Amp		50 ns
K5A3340YTC-T8550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 8 / 256K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8				11 mm
K1B3216BDD-BI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B54						Not Qualified	33554432 bit					.0001 Amp		70 ns
KMM374S1600AT-G2	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1980 mA	16777216 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		0 Cel		DUAL	R-PDMA-N168				83 MHz		Not Qualified	1207959552 bit					.036 Amp		8 ns
KMM372F3200AK2-5	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2800 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			50.8 mm			Not Qualified	2415919104 bit					.03 Amp		50 ns
K5C6481NBM-T355	Samsung	MEMORY CIRCUIT	INDUSTRIAL	81	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B81		3.3 V	1.2 mm		10.4 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 512K X 16 BIT FULL CMOS SRAM				10.8 mm
KMM372F3280AK3-5	Samsung		COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2800 mA	33554432 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL	R-PDMA-N168			41.91 mm			Not Qualified	2415919104 bit					.03 Amp		50 ns
K5A3B41YBA-K870	Samsung	MEMORY CIRCUIT	INDUSTRIAL	66	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM				11 mm
K5A3380YTB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM			.000015 Amp	11 mm	80 ns
MB-MJ128G	Samsung	MEMORY CIRCUIT	OTHER		DIE		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		137438953472 words						8	UNCASED CHIP				85 Cel		128GX8	128G		-25 Cel		UPPER	R-XUUC-N							1099511627776 bit
M395T1K66AZ4-CD58	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		5090 mA	1073741824 words		COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G		0 Cel		DUAL	R-PDMA-N240	3			266 MHz		Not Qualified	77309411328 bit				260	2.52 Amp
KAD070300B-TNNL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA		SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel					-40 Cel		BOTTOM	S-PBGA-B69						Not Qualified						.00002 Amp		80 ns
M372V0803CJT-C50	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		990 mA	8388608 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		0 Cel		DUAL	R-PDMA-N168			31.75 mm			Not Qualified	603979776 bit					.03 Amp		50 ns
KS74AHCT670DT	Samsung		INDUSTRIAL	16	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING						5		5		SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	85 Cel					-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G16						Not Qualified				e0
KMM374S823AT-G2	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1035 mA	8388608 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	8MX72	8M		0 Cel		DUAL	R-PDMA-N168				83 MHz		Not Qualified	603979776 bit					.018 Amp		8 ns
M474B1G73BH0-YK0	Samsung		OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1710 mA	1073741824 words		COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM204,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	1GX72	1G		0 Cel		DUAL	R-PDMA-N204				800 MHz		Not Qualified	77309411328 bit					.27 Amp		.225 ns
KMM374S1623AT-G2	Samsung		COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1305 mA	16777216 words		COMMON	3.3		3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M		0 Cel		DUAL	R-PDMA-N168				83 MHz		Not Qualified	1207959552 bit					.036 Amp		8 ns
K1B1616BDB-BI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			1048576 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel		BOTTOM	R-PBGA-B54						Not Qualified	16777216 bit							70 ns
K1C6416B8D-BI70	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B54	3					Not Qualified	67108864 bit				260	.00003 Amp		70 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.