16 SRAM 779

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CAT22C10J-30TE13	Onsemi	NON-VOLATILE SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		64 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		64X4	64		0 Cel	TIN LEAD	DUAL		R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	256 bit	4.5 V	DATA RETENTION > 10 YEARS	e0					10.3 mm	300 ns
CAT22C10WI-20-T1	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	16		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	64 words	COMMON	5	5	4			SRAMs		85 Cel	3-STATE	64X4	64	4.5 V	-40 Cel	TIN	DUAL	1	R-PDSO-G16	1	5.5 V			Not Qualified	256 bit	4.5 V		e3			NO	.00003 Amp		200 ns
CAT22C10J-20TE7	Onsemi	NON-VOLATILE SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		64 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		64X4	64		0 Cel	TIN LEAD	DUAL		R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	256 bit	4.5 V	DATA RETENTION > 10 YEARS	e0					10.3 mm	200 ns
CAT22C10WA-20TE13	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		64 words		5		4	SMALL OUTLINE			1.27 mm	105 Cel		64X4	64		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	256 bit	4.5 V		e3					10.3 mm	200 ns
CAT22C10JI-20	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		64 words		5		4	SMALL OUTLINE			1.27 mm	85 Cel		64X4	64		-40 Cel	TIN LEAD	DUAL		R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	256 bit	4.5 V	10 YEARS DATA RETENTION	e0					10.3 mm	200 ns
CAT22C10WE-20	Onsemi	NON-VOLATILE SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			40 mA	64 words		5	5	4	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	125 Cel		64X4	64		-40 Cel		DUAL		R-PDSO-G16					Not Qualified								.00003 Amp		200 ns
CAT22C10WI-30-T1	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	16		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	64 words	COMMON	5	5	4			SRAMs		85 Cel	3-STATE	64X4	64	4.5 V	-40 Cel	TIN	DUAL	1	R-PDSO-G16		5.5 V			Not Qualified	256 bit	4.5 V		e3			NO	.00003 Amp		300 ns
CAT22C10WE-30-T1	Onsemi	NON-VOLATILE SRAM	AUTOMOTIVE	16		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	64 words	COMMON	5		4					125 Cel	3-STATE	64X4	64	4.5 V	-40 Cel		DUAL	1	R-PDSO-G16		5.5 V			Not Qualified	256 bit	4.5 V					NO	.00003 Amp		300 ns
CAT22C10WI-20TE13	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		64 words		5		4	SMALL OUTLINE			1.27 mm	85 Cel		64X4	64		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	256 bit	4.5 V		e3					10.3 mm	200 ns
CAT22C10JI-20TE7	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		64 words		5		4	SMALL OUTLINE			1.27 mm	85 Cel		64X4	64		-40 Cel	TIN LEAD	DUAL		R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	256 bit	4.5 V	DATA RETENTION > 10 YEARS	e0					10.3 mm	200 ns
CAT22C10JA-20	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		64 words		5		4	SMALL OUTLINE			1.27 mm	105 Cel		64X4	64		-40 Cel	TIN LEAD	DUAL		R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	256 bit	4.5 V		e0					10.3 mm	200 ns
CAT22C10J-20TE13	Onsemi	NON-VOLATILE SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		64 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		64X4	64		0 Cel	TIN LEAD	DUAL		R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	256 bit	4.5 V	DATA RETENTION > 10 YEARS	e0					10.3 mm	200 ns
CAT22C10JI-30	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		64 words		5		4	SMALL OUTLINE			1.27 mm	85 Cel		64X4	64		-40 Cel	TIN LEAD	DUAL		R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	256 bit	4.5 V	10 YEARS DATA RETENTION	e0					10.3 mm	300 ns
CAT22C10JA-30	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		64 words		5		4	SMALL OUTLINE			1.27 mm	105 Cel		64X4	64		-40 Cel	TIN LEAD	DUAL		R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	256 bit	4.5 V		e0					10.3 mm	300 ns
CAT22C10WA-30	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		64 words		5		4	SMALL OUTLINE			1.27 mm	105 Cel		64X4	64		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	256 bit	4.5 V		e3					10.3 mm	300 ns
CAT22C10WA-20	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		64 words		5		4	SMALL OUTLINE			1.27 mm	105 Cel		64X4	64		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	256 bit	4.5 V		e3					10.3 mm	200 ns
CAT22C10JI-30TE7	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		64 words		5		4	SMALL OUTLINE			1.27 mm	85 Cel		64X4	64		-40 Cel	TIN LEAD	DUAL		R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	256 bit	4.5 V	DATA RETENTION > 10 YEARS	e0					10.3 mm	300 ns
SN74LS670DR2	Onsemi	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL	GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	70 Cel		4X4	4		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G16		5.25 V	1.75 mm	3.9 mm	Not Qualified	16 bit	4.75 V		e0					9.9 mm	45 ns
CAT22C10WA-30TE13	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		64 words		5		4	SMALL OUTLINE			1.27 mm	105 Cel		64X4	64		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	256 bit	4.5 V		e3					10.3 mm	300 ns
CAT22C10J-20	Onsemi	NON-VOLATILE SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		64 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		64X4	64		0 Cel	TIN LEAD	DUAL		R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	256 bit	4.5 V	10 YEARS DATA RETENTION	e0					10.3 mm	200 ns
CAT22C10W-30TE7	Onsemi	NON-VOLATILE SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		64 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		64X4	64		0 Cel	MATTE TIN	DUAL		R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	256 bit	4.5 V	DATA RETENTION > 10 YEARS	e3					10.3 mm	300 ns
CAT22C10WI20	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	64 words		5	5	4	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		64X4	64		-40 Cel	TIN	DUAL		R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	256 bit	4.5 V		e3				.00003 Amp	10.3 mm	200 ns
CAT22C10W-30TE13	Onsemi	NON-VOLATILE SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		64 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		64X4	64		0 Cel	MATTE TIN	DUAL		R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	256 bit	4.5 V		e3					10.3 mm	300 ns
CAT22C10WE-20-T1	Onsemi	NON-VOLATILE SRAM	AUTOMOTIVE	16		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	64 words	COMMON	5		4					125 Cel	3-STATE	64X4	64	4.5 V	-40 Cel		DUAL	1	R-PDSO-G16		5.5 V			Not Qualified	256 bit	4.5 V					NO	.00003 Amp		200 ns
CAT22C10JI-30TE13	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		64 words		5		4	SMALL OUTLINE			1.27 mm	85 Cel		64X4	64		-40 Cel	TIN LEAD	DUAL		R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	256 bit	4.5 V	DATA RETENTION > 10 YEARS	e0					10.3 mm	300 ns
M54HC670F1	STMicroelectronics	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T16		6 V	5 mm	7.62 mm	Not Qualified	16 bit	2 V		e0			NO			59 ns
M74HC670F1	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	85 Cel	3-STATE	4X4	4		-40 Cel	TIN LEAD	DUAL	1	R-GDIP-T16		6 V	5 mm	7.62 mm	Not Qualified	16 bit	2 V		e0			NO			49 ns
M74HC670B1N	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	85 Cel	3-STATE	4X4	4		-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T16		6 V	5.1 mm	7.62 mm	Not Qualified	16 bit	2 V		e0			NO			49 ns
M74HC670M1	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	85 Cel	3-STATE	4X4	4		-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G16		6 V	1.75 mm	3.9 mm	Not Qualified	16 bit	2 V		e0			NO		9.9 mm	49 ns
M74HC670M1R	STMicroelectronics	STANDARD SRAM	MILITARY	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4 words		4.5	2/6	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	125 Cel	3-STATE	4X4	4		-55 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G16		6 V	1.75 mm	3.9 mm	Not Qualified	16 bit	2 V		e4			NO		9.9 mm	280 ns
T74LS670D1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	70 Cel		4X4	4		0 Cel		DUAL		R-GDIP-T16		5.25 V	5.08 mm	7.62 mm	Not Qualified	16 bit	4.75 V								45 ns
T74LS170B1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	70 Cel		4X4	4		0 Cel	TIN LEAD	DUAL		R-PDIP-T16		5.25 V	5.1 mm	7.62 mm	Not Qualified	16 bit	4.75 V		e0						40 ns
T74LS670M1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	70 Cel		4X4	4		0 Cel	TIN LEAD	DUAL		R-PDSO-G16		5.25 V	1.75 mm	3.9 mm	Not Qualified	16 bit	4.75 V		e0					9.9 mm	45 ns
T74LS670B1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	70 Cel		4X4	4		0 Cel	TIN LEAD	DUAL		R-PDIP-T16		5.25 V	5.1 mm	7.62 mm	Not Qualified	16 bit	4.75 V		e0						45 ns
M74HC670TTR	STMicroelectronics	STANDARD SRAM	MILITARY	16	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4 words		4.5	2/6	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP16,.25	Other Memory ICs	.65 mm	125 Cel		4X4	4		-55 Cel	TIN LEAD	DUAL		R-PDSO-G16		6 V	1.2 mm	4.4 mm	Not Qualified	16 bit	2 V		e0					5 mm	280 ns
M54HC670F1R	STMicroelectronics	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-55 Cel	TIN LEAD	DUAL	1	R-GDIP-T16		6 V	5.08 mm	7.62 mm	Not Qualified	16 bit	2 V		e0			NO			56 ns
T74LS170M1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		4X4	4		0 Cel		DUAL		R-PDSO-G16		5.25 V	1.75 mm	3.9 mm	Not Qualified	16 bit	4.75 V							9.9 mm	40 ns
M74HC670RM13TR	STMicroelectronics	STANDARD SRAM	MILITARY	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4 words		4.5	2/6	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	125 Cel		4X4	4		-55 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16		6 V	1.75 mm	3.9 mm	Not Qualified	16 bit	2 V		e4					9.9 mm	280 ns
T74LS170D1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	70 Cel		4X4	4		0 Cel		DUAL		R-GDIP-T16		5.25 V	5.08 mm	7.62 mm	Not Qualified	16 bit	4.75 V								40 ns
M74HC670B1R	STMicroelectronics	STANDARD SRAM	MILITARY	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words		4.5	2/6	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-55 Cel	MATTE TIN	DUAL	1	R-PDIP-T16		6 V	5.1 mm	7.62 mm	Not Qualified	16 bit	2 V		e3			NO			280 ns
N74F219AN	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	16 words		5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	1	R-PDIP-T16		5.5 V	4.7 mm	7.62 mm	Not Qualified	64 bit	4.5 V					NO		21.6 mm	8 ns
N74F189AD	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	16 words		5	5	4	SMALL OUTLINE	SOP16,.25	SRAMs	1.27 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	1	R-PDSO-G16		5.5 V			Not Qualified	64 bit	4.5 V	INVERTED OUTPUTS				NO			8 ns
74HCT670D-T	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G16	1	5.5 V	1.75 mm	3.9 mm	Not Qualified	16 bit	4.5 V		e4			NO		9.9 mm	60 ns
74HC670DB	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	SMALL OUTLINE, SHRINK PITCH	SSOP16,.3	Other Memory ICs	.65 mm	125 Cel		4X4	4		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G16	1	6 V	2 mm	5.3 mm	Not Qualified	16 bit	2 V		e4	30	260			6.2 mm	59 ns
N74F219AD-T	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL	GULL WING	PARALLEL	ASYNCHRONOUS		16 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	1	R-PDSO-G16		5.5 V	1.75 mm	3.9 mm	Not Qualified	64 bit	4.5 V					NO		9.9 mm	8 ns
935018290602	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL	GULL WING	PARALLEL	ASYNCHRONOUS		16 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		16X4	16		0 Cel		DUAL		R-PDSO-G16		5.5 V	1.75 mm	3.9 mm	Not Qualified	64 bit	4.5 V							9.9 mm	8 ns
54S189/BFA	NXP Semiconductors	STANDARD SRAM	MILITARY	16		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	TTL	FLAT	PARALLEL	ASYNCHRONOUS		16 words		5		4	FLATPACK				125 Cel	3-STATE	16X4	16		-55 Cel		DUAL	1	R-CDFP-F16		5.25 V			Not Qualified	64 bit	4.75 V					NO			50 ns
74HCT670PW-T	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4 words		5		4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	125 Cel		4X4	4		-40 Cel		DUAL		R-PDSO-G16		5.5 V	1.1 mm	4.4 mm	Not Qualified	16 bit	4.5 V							5 mm	60 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.