16 SRAM 779

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

CY14B512Q2-SFXIT

Infineon Technologies

NON-VOLATILE SRAM

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

10 mA

65536 words

COMMON

3

8

SMALL OUTLINE

SOP16,.4

1.27 mm

85 Cel

3-STATE

64KX8

64K

2.7 V

-40 Cel

DUAL

1

R-PDSO-G16

3.6 V

2.667 mm

40 MHz

7.4925 mm

524288 bit

2.7 V

NO

.005 Amp

10.2865 mm

CY14V101QS-SE108XQ

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

131072 words

3

8

SMALL OUTLINE

1.27 mm

105 Cel

128KX8

128K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G16

3

3.6 V

2.667 mm

7.4925 mm

1048576 bit

2.7 V

e4

260

10.2865 mm

CY14C101PA-SFXI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

131072 words

2.5

2.5

8

SMALL OUTLINE

SOP16,.4

SRAMs

1.27 mm

85 Cel

128KX8

128K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G16

3

2.6 V

2.667 mm

7.4925 mm

Not Qualified

1048576 bit

2.4 V

e3

.00025 Amp

10.2865 mm

CY14C101J3-SFXIT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

131072 words

2.5

2.5

8

SMALL OUTLINE

SOP16,.4

SRAMs

1.27 mm

85 Cel

128KX8

128K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G16

3

2.6 V

2.667 mm

7.4925 mm

Not Qualified

1048576 bit

2.4 V

e3

.00015 Amp

10.2865 mm

CY14V101QS-SE108XQT

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

131072 words

3

8

SMALL OUTLINE

1.27 mm

105 Cel

128KX8

128K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G16

3.6 V

2.667 mm

7.4925 mm

1048576 bit

2.7 V

e4

10.2865 mm

DS1200SN

Maxim Integrated

NON-VOLATILE SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

6 mA

128 words

8

SMALL OUTLINE

SOP16,.4

SRAMs

1.27 mm

85 Cel

128X8

128

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G16

Not Qualified

1024 bit

e0

.0025 Amp

DS1200S+T&R

Maxim Integrated

NON-VOLATILE SRAM

COMMERCIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

128 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

128X8

128

0 Cel

MATTE TIN

DUAL

R-PDSO-G16

1

5.5 V

2.67 mm

7.5 mm

Not Qualified

1024 bit

4.5 V

DATA RETENTION > 10 YEARS

e3

30

260

10.28 mm

125 ns

DS1200S+

Maxim Integrated

NON-VOLATILE SRAM

COMMERCIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

128 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

128X8

128

0 Cel

MATTE TIN

DUAL

R-PDSO-G16

1

5.5 V

2.67 mm

7.5 mm

Not Qualified

1024 bit

4.5 V

DATA RETENTION > 10 YEARS

e3

30

260

10.28 mm

125 ns

DS1200S

Maxim Integrated

NON-VOLATILE SRAM

COMMERCIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

6 mA

128 words

5

8

SMALL OUTLINE

SOP16,.4

SRAMs

1.27 mm

70 Cel

128X8

128

0 Cel

TIN LEAD

DUAL

R-PDSO-G16

5.5 V

2.65 mm

7.5 mm

Not Qualified

1024 bit

4.5 V

DATA RETENTION > 10 YEARS

e0

.0025 Amp

10.3 mm

125 ns

TC74AC670F

Toshiba

STANDARD SRAM

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

4 words

4

SMALL OUTLINE

1.27 mm

4X4

4

TIN LEAD

DUAL

R-PDSO-G16

1.9 mm

5.3 mm

Not Qualified

16 bit

e0

10.3 mm

TC74HC670AF(TP2)

Toshiba

STANDARD SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE

1.27 mm

85 Cel

3-STATE

4X4

4

-40 Cel

DUAL

1

R-PDSO-G16

6 V

1.9 mm

5.3 mm

Not Qualified

16 bit

2 V

NO

10.3 mm

34 ns

TC74AC670P

Toshiba

STANDARD SRAM

INDUSTRIAL

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4 words

5

4

IN-LINE

2.54 mm

85 Cel

3-STATE

4X4

4

-40 Cel

TIN LEAD

DUAL

1

R-PDIP-T16

5.5 V

4.45 mm

7.62 mm

Not Qualified

16 bit

2 V

e0

NO

19.25 mm

15.1 ns

TC74HC670AF

Toshiba

STANDARD SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

2

2/6

4

SMALL OUTLINE

SOP16,.3

Other Memory ICs

1.27 mm

85 Cel

3-STATE

4X4

4

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G16

6 V

1.9 mm

5.3 mm

Not Qualified

16 bit

ADDRESS TO OUTPUT DELAY IS 245NS

e0

10.3 mm

TC5508P-4

Toshiba

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

SYNCHRONOUS

1024 words

5

5

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

3-STATE

1KX1

1K

-30 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T16

Not Qualified

1024 bit

e0

450 ns

TC74HC670AF(EL)

Toshiba

STANDARD SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE

1.27 mm

85 Cel

3-STATE

4X4

4

-40 Cel

DUAL

1

R-PDSO-G16

6 V

1.9 mm

5.3 mm

Not Qualified

16 bit

2 V

NO

10.3 mm

34 ns

TC74HC670AF-TP2EL

Toshiba

STANDARD SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE

1.27 mm

85 Cel

3-STATE

4X4

4

-40 Cel

DUAL

1

R-PDSO-G16

6 V

1.9 mm

5.3 mm

Not Qualified

16 bit

2 V

NO

10.3 mm

49 ns

TC74AC670FN

Toshiba

STANDARD SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE

1.27 mm

85 Cel

3-STATE

4X4

4

-40 Cel

TIN LEAD

DUAL

1

R-PDSO-G16

5.5 V

1.75 mm

3.9 mm

Not Qualified

16 bit

2 V

e0

NO

9.9 mm

15.1 ns

TC74HC670AP

Toshiba

STANDARD SRAM

INDUSTRIAL

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4 words

4.5

2/6

4

IN-LINE

DIP16,.3

Other Memory ICs

2.54 mm

85 Cel

3-STATE

4X4

4

-40 Cel

DUAL

R-PDIP-T16

6 V

4.45 mm

7.62 mm

Not Qualified

16 bit

2 V

ADDRESS TO OUTPUT DELAY IS 245NS

19.25 mm

TC74HC670AF(TP1)

Toshiba

STANDARD SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE

1.27 mm

85 Cel

3-STATE

4X4

4

-40 Cel

DUAL

1

R-PDSO-G16

6 V

1.9 mm

5.3 mm

Not Qualified

16 bit

2 V

NO

10.3 mm

34 ns

TC74HC670AF-TP1EL

Toshiba

STANDARD SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE

1.27 mm

85 Cel

3-STATE

4X4

4

-40 Cel

DUAL

1

R-PDSO-G16

6 V

1.9 mm

5.3 mm

Not Qualified

16 bit

2 V

NO

10.3 mm

49 ns

TC5508P-1

Toshiba

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

SYNCHRONOUS

1024 words

5

5

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

3-STATE

1KX1

1K

-30 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T16

Not Qualified

1024 bit

e0

550 ns

HD74LS170FP

Renesas Electronics

STANDARD SRAM

COMMERCIAL EXTENDED

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

TTL

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE

1.27 mm

75 Cel

4X4

4

-20 Cel

DUAL

R-PDSO-G16

5.25 V

2.2 mm

5.5 mm

Not Qualified

16 bit

4.75 V

10.06 mm

45 ns

HD74HC670RP

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

4.5

4

SMALL OUTLINE

1.27 mm

85 Cel

4X4

4

-40 Cel

DUAL

R-PDSO-G16

6 V

1.75 mm

3.9 mm

Not Qualified

16 bit

2 V

9.9 mm

200 ns

UPB10142D

Renesas Electronics

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

CERAMIC

NO

ECL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

64 words

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

64X1

64

-30 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T16

Not Qualified

e0

HD74LS670RP-EL

Renesas Electronics

STANDARD SRAM

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

GULL WING

SMALL OUTLINE

1.27 mm

DUAL

R-PDSO-G16

1.75 mm

3.9 mm

Not Qualified

9.9 mm

UPB2206D

Renesas Electronics

STANDARD SRAM

COMMERCIAL

16

DIP

RECTANGULAR

CERAMIC

NO

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

256 words

5

5

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

70 Cel

OPEN-COLLECTOR

256X1

256

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T16

Not Qualified

e0

50 ns

HD74HC670P

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4 words

4.5

2/6

4

IN-LINE

DIP16,.3

Other Memory ICs

2.54 mm

85 Cel

4X4

4

-40 Cel

DUAL

R-PDIP-T16

1

6 V

5.06 mm

7.62 mm

Not Qualified

16 bit

2 V

19.2 mm

200 ns

HD74LS170FP-EL

Renesas Electronics

STANDARD SRAM

COMMERCIAL EXTENDED

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

4 words

5

4

SMALL OUTLINE

1.27 mm

75 Cel

4X4

4

-20 Cel

DUAL

R-PDSO-G16

5.25 V

2.2 mm

5.5 mm

Not Qualified

16 bit

4.75 V

10.06 mm

HD74HC670FP

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

4.5

2/6

4

SMALL OUTLINE

SOP16,.3

Other Memory ICs

1.27 mm

85 Cel

4X4

4

-40 Cel

DUAL

R-PDSO-G16

1

6 V

2.2 mm

5.5 mm

Not Qualified

16 bit

2 V

20

260

10.06 mm

200 ns

HD74HC670P-E

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4 words

4.5

4

IN-LINE

2.54 mm

85 Cel

4X4

4

-40 Cel

DUAL

R-PDIP-T16

1

6 V

5.06 mm

7.62 mm

Not Qualified

16 bit

2 V

19.2 mm

200 ns

HD74LS670FP-EL

Renesas Electronics

STANDARD SRAM

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

GULL WING

SMALL OUTLINE

1.27 mm

DUAL

R-PDSO-G16

2.2 mm

5.5 mm

Not Qualified

10.06 mm

UPD2102ALC-2

Renesas Electronics

STANDARD SRAM

COMMERCIAL

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

SEPARATE

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX1

1K

-10 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T16

Not Qualified

1024 bit

e0

250 ns

UPB10148D

Renesas Electronics

STANDARD SRAM

OTHER

16

DIP

RECTANGULAR

CERAMIC

NO

ECL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

64 words

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

64X1

64

-30 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T16

Not Qualified

e0

HD74LS670P

Renesas Electronics

STANDARD SRAM

COMMERCIAL EXTENDED

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4 words

5

5

4

IN-LINE

DIP16,.3

Other Memory ICs

2.54 mm

75 Cel

4X4

4

-20 Cel

DUAL

R-PDIP-T16

5.25 V

5.06 mm

7.62 mm

Not Qualified

16 bit

4.75 V

19.2 mm

45 ns

HD74AC670FP-EL

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

3.3

4

SMALL OUTLINE

1.27 mm

85 Cel

4X4

4

-40 Cel

DUAL

R-PDSO-G16

2.2 mm

5.5 mm

Not Qualified

16 bit

10.06 mm

HD74AC670RP-EL

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

3.3

4

SMALL OUTLINE

1.27 mm

85 Cel

4X4

4

-40 Cel

DUAL

R-PDSO-G16

1.75 mm

3.9 mm

Not Qualified

16 bit

9.9 mm

UPB2200D

Renesas Electronics

STANDARD SRAM

COMMERCIAL

16

DIP

RECTANGULAR

CERAMIC

NO

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

256 words

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

70 Cel

3-STATE

256X1

256

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T16

Not Qualified

e0

50 ns

HM3-6508-9+

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

SYNCHRONOUS

7 mA

1024 words

5

5

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

85 Cel

3-STATE

1KX1

1K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDIP-T16

1024 bit

e0

.00001 Amp

250 ns

HD74AC670T-ELL

Renesas Electronics

STANDARD SRAM

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

GULL WING

SMALL OUTLINE

1.27 mm

DUAL

R-PDSO-G16

1.75 mm

3.9 mm

Not Qualified

9.9 mm

HD74AC670RP

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

3.3

4

SMALL OUTLINE

1.27 mm

85 Cel

4X4

4

-40 Cel

DUAL

R-PDSO-G16

1.75 mm

3.9 mm

Not Qualified

16 bit

9.9 mm

HD74HC670RP-EL

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

4.5

4

SMALL OUTLINE

1.27 mm

85 Cel

4X4

4

-40 Cel

DUAL

R-PDSO-G16

6 V

1.75 mm

3.9 mm

Not Qualified

16 bit

2 V

9.9 mm

200 ns

UPD2102ALC

Renesas Electronics

STANDARD SRAM

COMMERCIAL

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

SEPARATE

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX1

1K

-10 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T16

Not Qualified

1024 bit

e0

350 ns

HD74LS170RP

Renesas Electronics

STANDARD SRAM

COMMERCIAL EXTENDED

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

TTL

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE

1.27 mm

75 Cel

4X4

4

-20 Cel

DUAL

R-PDSO-G16

5.25 V

1.75 mm

3.9 mm

Not Qualified

16 bit

4.75 V

9.9 mm

45 ns

HD74AC670T

Renesas Electronics

STANDARD SRAM

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

GULL WING

SMALL OUTLINE

1.27 mm

DUAL

R-PDSO-G16

1.75 mm

3.9 mm

Not Qualified

9.9 mm

HD74HC670FP-E

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

4.5

4

SMALL OUTLINE

1.27 mm

85 Cel

4X4

4

-40 Cel

DUAL

R-PDSO-G16

1

6 V

2.2 mm

5.5 mm

Not Qualified

16 bit

2 V

10.06 mm

200 ns

HD74LS670RP

Renesas Electronics

STANDARD SRAM

COMMERCIAL EXTENDED

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE

1.27 mm

75 Cel

4X4

4

-20 Cel

DUAL

R-PDSO-G16

5.25 V

1.75 mm

3.9 mm

Not Qualified

16 bit

4.75 V

9.9 mm

45 ns

HD74LS670FP-E

Renesas Electronics

STANDARD SRAM

COMMERCIAL EXTENDED

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4 words

5

4

SMALL OUTLINE

1.27 mm

75 Cel

4X4

4

-20 Cel

TIN BISMUTH

DUAL

R-PDSO-G16

1

5.25 V

2.2 mm

5.5 mm

Not Qualified

16 bit

4.75 V

e6

10.06 mm

45 ns

UPD2102ALC-4

Renesas Electronics

STANDARD SRAM

COMMERCIAL

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

SEPARATE

1

IN-LINE

DIP16,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX1

1K

-10 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T16

Not Qualified

1024 bit

e0

450 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.