16 SRAM 779

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Nominal Negative Supply Voltage	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Length	Maximum Access Time
74HC670D	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5	2/6	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	125 Cel	3-STATE	4X4	4		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	1	R-PDSO-G16	1	6 V	1.75 mm	3.9 mm	Not Qualified	16 bit	2 V		e4	30	260	NO	9.9 mm	59 ns
N74F670N	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words	5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4X4	4		0 Cel		DUAL	1	R-PDIP-T16		5.5 V	4.7 mm	7.62 mm	Not Qualified	16 bit	4.5 V					NO	21.6 mm	12.5 ns
74HCT670N	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words	5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T16		5.5 V	4.7 mm	7.62 mm	Not Qualified	16 bit	4.5 V		e4			NO	21.6 mm	60 ns
74HC670DB,118	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5		4	SMALL OUTLINE, SHRINK PITCH			.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	6 V	2 mm	5.3 mm	Not Qualified	16 bit	2 V		e4				6.2 mm	59 ns
74HC670D/T3	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5		4	SMALL OUTLINE			1.27 mm	125 Cel		4X4	4		-40 Cel		DUAL		R-PDSO-G16		6 V	1.75 mm	3.9 mm	Not Qualified	16 bit	2 V						9.9 mm	59 ns
74HCT670DB-T	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5		4	SMALL OUTLINE, SHRINK PITCH			.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	5.5 V	2 mm	5.3 mm	Not Qualified	16 bit	4.5 V		e4				6.2 mm	60 ns
8602301EX	NXP Semiconductors	CACHE SRAM	MILITARY	16	DIP	RECTANGULAR	UNSPECIFIED	NO	1	BIPOLAR	MIL-STD-883		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words	5		1	IN-LINE				125 Cel		256X1	256		-55 Cel		DUAL		R-XDIP-T16		5.25 V			Not Qualified	256 bit	4.75 V
74HC670NB	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words	5		4	IN-LINE				125 Cel	3-STATE	4X4	4		-40 Cel		DUAL	1	R-PDIP-T16		6 V			Not Qualified	16 bit	2 V					NO		59 ns
935018290118	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL			GULL WING	PARALLEL	ASYNCHRONOUS		16 words	5		4	SMALL OUTLINE			1.27 mm	70 Cel		16X4	16		0 Cel		DUAL		R-PDSO-G16		5.5 V	1.75 mm	3.9 mm	Not Qualified	64 bit	4.5 V						9.9 mm	8 ns
74HCT670PW	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5		4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	125 Cel		4X4	4		-40 Cel		DUAL		R-PDSO-G16		5.5 V	1.1 mm	4.4 mm	Not Qualified	16 bit	4.5 V						5 mm	60 ns
74HCT670N,652	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words	5	5	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T16		5.5 V	4.7 mm	7.62 mm	Not Qualified	16 bit	4.5 V		e4			NO	21.6 mm	60 ns
74HCT670DB,118	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5		4	SMALL OUTLINE, SHRINK PITCH			.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	5.5 V	2 mm	5.3 mm	Not Qualified	16 bit	4.5 V		e4				6.2 mm	60 ns
N74F189AN	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	16 words	5	5	4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	1	R-PDIP-T16		5.5 V	4.2 mm	7.62 mm	Not Qualified	64 bit	4.5 V	INVERTED OUTPUTS				NO	19.025 mm	8 ns
74HC670PW	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5		4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	125 Cel		4X4	4		-40 Cel		DUAL		R-PDSO-G16		6 V	1.1 mm	4.4 mm	Not Qualified	16 bit	2 V						5 mm	59 ns
N74F670D-T	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL			GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	4X4	4		0 Cel		DUAL	1	R-PDSO-G16		5.5 V	2.65 mm	7.5 mm	Not Qualified	16 bit	4.5 V					NO	10.3 mm	12.5 ns
74HCT670NB	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words	5		4	IN-LINE				125 Cel	3-STATE	4X4	4		-40 Cel		DUAL	1	R-PDIP-T16		5.5 V			Not Qualified	16 bit	4.5 V					NO		60 ns
S54S200F	NXP Semiconductors	STANDARD SRAM	MILITARY	16		RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	TTL			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words	5		1	IN-LINE				125 Cel	3-STATE	256X1	256		-55 Cel		DUAL	1	R-GDIP-T16		5.5 V			Not Qualified	256 bit	4.5 V					NO		70 ns
74HC670DB,112	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5	2/6	4	SMALL OUTLINE, SHRINK PITCH	SSOP16,.3	Other Memory ICs	.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	6 V	2 mm	5.3 mm	Not Qualified	16 bit	2 V		e4				6.2 mm	59 ns
74HCT670D,653	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G16	1	5.5 V	1.75 mm	3.9 mm	Not Qualified	16 bit	4.5 V		e4			NO	9.9 mm	60 ns
74HC670DB-T	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5		4	SMALL OUTLINE, SHRINK PITCH			.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	6 V	2 mm	5.3 mm	Not Qualified	16 bit	2 V		e4				6.2 mm	59 ns
10145I	NXP Semiconductors	STANDARD SRAM	OTHER	16		RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	ECL		-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words			4	IN-LINE				85 Cel	OPEN-EMITTER	16X4	16		-30 Cel		DUAL	1	R-GDIP-T16					Not Qualified	64 bit						NO		13 ns
82S16/BEA	NXP Semiconductors	CACHE SRAM	MILITARY	16		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	TTL			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words	5		1	IN-LINE				125 Cel		256X1	256		-55 Cel		DUAL		R-CDIP-T16		5.5 V			Not Qualified	256 bit	4.5 V							70 ns
74F219AN	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words	5		4	IN-LINE			2.54 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	1	R-PDIP-T16		5.5 V	4.2 mm	7.62 mm	Not Qualified	64 bit	4.5 V					NO	19.025 mm	8 ns
74HC670N,652	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words	5	2/6	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T16		6 V	4.7 mm	7.62 mm	Not Qualified	16 bit	2 V		e4			NO	21.6 mm	59 ns
N74F670D	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL			GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5	5	4	SMALL OUTLINE	SOP16,.4	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4X4	4		0 Cel		DUAL	1	R-PDSO-G16		5.5 V	2.65 mm	7.5 mm	Not Qualified	16 bit	4.5 V					NO	10.3 mm	12.5 ns
N74F219AD	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL			GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	16 words	5	5	4	SMALL OUTLINE	SOP16,.25	SRAMs	1.27 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	1	R-PDSO-G16		5.5 V	1.75 mm	3.9 mm	Not Qualified	64 bit	4.5 V					NO	9.9 mm	8 ns
74HC670N	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4 words	5	2/6	4	IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDIP-T16		6 V	4.7 mm	7.62 mm	Not Qualified	16 bit	2 V		e4			NO	21.6 mm	59 ns
74HCT670D	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5	5	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	125 Cel	3-STATE	4X4	4		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	1	R-PDSO-G16	1	5.5 V	1.75 mm	3.9 mm	Not Qualified	16 bit	4.5 V		e4	30	260	NO	9.9 mm	60 ns
74HC670D,653	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	4X4	4		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	1	R-PDSO-G16	1	6 V	1.75 mm	3.9 mm	Not Qualified	16 bit	2 V		e4	30	260	NO	9.9 mm	59 ns
74F219AD	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL			GULL WING	PARALLEL	ASYNCHRONOUS		16 words	5		4	SMALL OUTLINE				70 Cel	3-STATE	16X4	16		0 Cel		DUAL	1	R-PDSO-G16		5.5 V			Not Qualified	64 bit	4.5 V					NO		8 ns
74F219AD-T	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL			GULL WING	PARALLEL	ASYNCHRONOUS		16 words	5		4	SMALL OUTLINE				70 Cel	3-STATE	16X4	16		0 Cel		DUAL	1	R-PDSO-G16		5.5 V			Not Qualified	64 bit	4.5 V					NO		8 ns
74HC670PW-T	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5		4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	125 Cel		4X4	4		-40 Cel		DUAL		R-PDSO-G16		6 V	1.1 mm	4.4 mm	Not Qualified	16 bit	2 V						5 mm	59 ns
74HC670D,652	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5	2/6	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G16	1	6 V	1.75 mm	3.9 mm	Not Qualified	16 bit	2 V		e4			NO	9.9 mm	59 ns
54S189/BEA	NXP Semiconductors	STANDARD SRAM	MILITARY	16		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	TTL			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words	5		4	IN-LINE				125 Cel	3-STATE	16X4	16		-55 Cel		DUAL	1	R-CDIP-T16		5.25 V			Not Qualified	64 bit	4.75 V					NO		50 ns
74HCT670DB	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5	5	4	SMALL OUTLINE, SHRINK PITCH	SSOP16,.3	Other Memory ICs	.65 mm	125 Cel		4X4	4		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G16	1	5.5 V	2 mm	5.3 mm	Not Qualified	16 bit	4.5 V		e4	30	260		6.2 mm	60 ns
8602301FX	NXP Semiconductors	CACHE SRAM	MILITARY	16	DFP	RECTANGULAR	UNSPECIFIED	YES	1	BIPOLAR	MIL-STD-883		FLAT	PARALLEL	ASYNCHRONOUS		256 words	5		1	FLATPACK				125 Cel		256X1	256		-55 Cel		DUAL		R-XDFP-F16		5.25 V			Not Qualified	256 bit	4.75 V
10145F	NXP Semiconductors	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	ECL		-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	165 mA	16 words			4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	OPEN-EMITTER	16X4	16		-30 Cel	TIN LEAD	DUAL	1	R-GDIP-T16					Not Qualified	64 bit			e0			NO		13 ns
N74F189DB	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		TTL			GULL WING	PARALLEL	ASYNCHRONOUS		16 words	5	5	4	SMALL OUTLINE	SOP16,.25	SRAMs	1.27 mm	70 Cel	3-STATE	16X4	16		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G16									e0
74HC670D-T	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5		4	SMALL OUTLINE			1.27 mm	125 Cel	3-STATE	4X4	4		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL	1	R-PDSO-G16	1	6 V	1.75 mm	3.9 mm	Not Qualified	16 bit	2 V		e4	30	260	NO	9.9 mm	59 ns
74HCT670DB,112	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5	5	4	SMALL OUTLINE, SHRINK PITCH	SSOP16,.3	Other Memory ICs	.65 mm	125 Cel		4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	1	5.5 V	2 mm	5.3 mm	Not Qualified	16 bit	4.5 V		e4				6.2 mm	60 ns
933984380602	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words	5		4	IN-LINE			2.54 mm	70 Cel		16X4	16		0 Cel		DUAL		R-PDIP-T16		5.5 V	4.7 mm	7.62 mm	Not Qualified	64 bit	4.5 V						21.6 mm	8 ns
74HCT670D,652	NXP Semiconductors	STANDARD SRAM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		4 words	5	5	4	SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	125 Cel	3-STATE	4X4	4		-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G16	1	5.5 V	1.75 mm	3.9 mm	Not Qualified	16 bit	4.5 V		e4			NO	9.9 mm	60 ns
HEF4720BTD	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		256 words	5		1	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDSO-G16		15 V	1.75 mm	3.9 mm	Not Qualified	256 bit	3 V					NO	9.9 mm	580 ns
HEF4720BPB	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words	5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDIP-T16		15 V	4.7 mm	7.62 mm	Not Qualified	256 bit	3 V					NO	21.6 mm	580 ns
HEF4720BP	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words	5	3/15	1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDIP-T16		15 V	4.7 mm	7.62 mm	Not Qualified	256 bit	3 V					NO	21.6 mm	580 ns
C3F189AD	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL			GULL WING	PARALLEL	ASYNCHRONOUS		16 words	5		4	SMALL OUTLINE				70 Cel	3-STATE	16X4	16		0 Cel		DUAL	1	R-PDSO-G16		5.5 V			Not Qualified	64 bit	4.5 V	INVERTED OUTPUTS				NO		8 ns
HEF4720VTD-T	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		256 words	5		1	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDSO-G16		12.5 V	1.75 mm	3.9 mm	Not Qualified	256 bit	4.5 V					NO	9.9 mm	580 ns
C3F219AD-T	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL			GULL WING	PARALLEL	ASYNCHRONOUS		16 words	5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	1	R-PDSO-G16		5.5 V	2.65 mm	7.5 mm	Not Qualified	64 bit	4.5 V					NO	10.3 mm	8 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.