16 SRAM 779

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
HEF4720VPN	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDIP-T16		12.5 V	4.7 mm		7.62 mm	Not Qualified	256 bit	4.5 V				NO		21.6 mm	580 ns
HEF4720VT-T	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		256 words		5		1	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDSO-G16		15 V	1.75 mm		3.9 mm	Not Qualified	256 bit	3 V				NO		9.9 mm	580 ns
HEF4720VTD	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		256 words		5		1	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDSO-G16		12.5 V	1.75 mm		3.9 mm	Not Qualified	256 bit	4.5 V				NO		9.9 mm	580 ns
HEF4720BDF	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-GDIP-T16		15 V	5.08 mm		7.62 mm	Not Qualified	256 bit	3 V				NO			580 ns
HEF4720BDB	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-GDIP-T16		15 V	5.08 mm		7.62 mm	Not Qualified	256 bit	3 V				NO			580 ns
HEF4720VDB	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-GDIP-T16		12.5 V	5.08 mm		7.62 mm	Not Qualified	256 bit	4.5 V				NO			580 ns
C3F219AD	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	TTL	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	16 words		5	5	4	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	70 Cel	3-STATE	16X4	16		0 Cel		DUAL	1	R-PDSO-G16		5.5 V	2.65 mm		7.5 mm	Not Qualified	64 bit	4.5 V				NO		10.3 mm	8 ns
HEF4720VT	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		256 words		5	4.5/12.5	1	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDSO-G16		15 V	1.75 mm		3.9 mm	Not Qualified	256 bit	3 V				NO		9.9 mm	580 ns
HEF4720VP	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5	4.5/12.5	1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDIP-T16		15 V	4.7 mm		7.62 mm	Not Qualified	256 bit	3 V				NO		21.6 mm	580 ns
HEF4720VPB	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDIP-T16		12.5 V	4.7 mm		7.62 mm	Not Qualified	256 bit	4.5 V				NO		21.6 mm	580 ns
HEF4720BT-T	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		256 words		5		1	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDSO-G16		15 V	1.75 mm		3.9 mm	Not Qualified	256 bit	3 V				NO		9.9 mm	580 ns
HEF4720BPN	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDIP-T16		15 V	4.7 mm		7.62 mm	Not Qualified	256 bit	3 V				NO		21.6 mm	580 ns
HEF4720VD	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-GDIP-T16		15 V	5.08 mm		7.62 mm	Not Qualified	256 bit	3 V				NO			580 ns
HEF4720VDF	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-GDIP-T16		12.5 V	5.08 mm		7.62 mm	Not Qualified	256 bit	4.5 V				NO			580 ns
HEF4720BT	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		256 words		5	3/15	1	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDSO-G16		15 V	1.75 mm		3.9 mm	Not Qualified	256 bit	3 V				NO		9.9 mm	580 ns
HEF4720BTD-T	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		256 words		5		1	SMALL OUTLINE			1.27 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-PDSO-G16		15 V	1.75 mm		3.9 mm	Not Qualified	256 bit	3 V				NO		9.9 mm	580 ns
HEF4720BD	NXP Semiconductors	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256X1	256	3 V	-40 Cel		DUAL	1	R-GDIP-T16		15 V	5.08 mm		7.62 mm	Not Qualified	256 bit	3 V				NO			580 ns
SAB81C54-P	Infineon Technologies	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		512 words	COMMON		3/5	8	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	512X8	512		-25 Cel	Tin/Lead (Sn/Pb)	DUAL	1, (MUXED)	R-PDIP-T16						Not Qualified	4096 bit		e0				.000001 Amp		150 ns
SAB81C50-P	Infineon Technologies	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words			3/5	8	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel		256X8	256		-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16						Not Qualified	2048 bit		e0				.000001 Amp		900 ns
SAB81C52P	Infineon Technologies	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	.1 mA	256 words		5	5	8	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256X8	256	1 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16						Not Qualified	2048 bit		e0				.000001 Amp		200 ns
SAB81C51-P	Infineon Technologies	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words			3/5	8	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel		256X8	256		-25 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16						Not Qualified	2048 bit		e0				.000001 Amp		900 ns
SAE81C54	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		512 words	COMMON		3/5	8	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	512X8	512		-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1, (MUXED)	R-PDIP-T16						Not Qualified	4096 bit		e0				.000001 Amp		350 ns
SAE81C52P	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	.5 mA	256 words		5	5	8	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	256X8	256	1 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16						Not Qualified	2048 bit		e0				.000001 Amp		200 ns
SAE81C54P	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		512 words	COMMON		3/5	8	IN-LINE	DIP16,.3	SRAMs	2.54 mm	85 Cel	3-STATE	512X8	512		-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1, (MUXED)	R-PDIP-T16						Not Qualified	4096 bit		e0				.000001 Amp		150 ns
SAB81C54	Infineon Technologies	STANDARD SRAM	OTHER	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		512 words	COMMON		3/5	8	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel	3-STATE	512X8	512		-25 Cel	Tin/Lead (Sn/Pb)	DUAL	1, (MUXED)	R-PDIP-T16						Not Qualified	4096 bit		e0				.000001 Amp		150 ns
CY14E101J3-SFXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		5	5	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	5.5 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	4.5 V	e3				.00015 Amp	10.2865 mm
CY14B101Q3A-SF104XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		3	3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	2.7 V	e3				.00015 Amp	10.2865 mm
CY14B256P-SFXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words		3	3/3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.49 mm	Not Qualified	262144 bit	2.7 V	e3	40	260		.005 Amp	10.28 mm
CY14B064I-SFXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words		3	3/3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		8KX8	8K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.495 mm	Not Qualified	65536 bit	2.7 V	e4		260		.00025 Amp	10.28 mm
CY14V101QS-SF108XQ	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		131072 words		3		8	SMALL OUTLINE			1.27 mm	105 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm		1048576 bit	2.7 V	e4		260			10.2865 mm
CY14C101Q3A-SF104XI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		2.5	2.5	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	2.6 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	2.4 V	e3				.00015 Amp	10.2865 mm
CY14B101Q3A-SF104XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		3	3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	2.7 V	e3				.00015 Amp	10.2865 mm
CY14B064PA-SFXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	SEPARATE	3	3/3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	2.7 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-G16	3	3.6 V	2.667 mm	40 MHz	7.4925 mm	Not Qualified	65536 bit	2.7 V			260	NO	.00025 Amp	10.2865 mm
CY14V101QS-SE108XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		131072 words		3		8	SMALL OUTLINE			1.27 mm	85 Cel		128KX8	128K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16		3.6 V	2.667 mm		7.4925 mm		1048576 bit	2.7 V	e4					10.2865 mm
CY14B512P-SFXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel	3-STATE	64KX8	64K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G16	3	3.6 V	2.667 mm	40 MHz	7.4925 mm	Not Qualified	524288 bit	2.7 V	e3			NO	.005 Amp	10.2865 mm
CY14B256I-SFXIT	Infineon Technologies	NON-VOLATILE SRAM MODULE	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words		3	3/3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	PURE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm	Not Qualified	262144 bit	2.7 V			260		.00025 Amp	10.2865 mm
CY14B512P-SFXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	3	3/3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel	3-STATE	64KX8	64K	2.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G16	3	3.6 V	2.667 mm	40 MHz	7.4925 mm	Not Qualified	524288 bit	2.7 V	e3	40	260	NO	.005 Amp	10.2865 mm
CY14E101Q3A-SFXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	4 mA	131072 words		5	5	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	5.5 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	4.5 V	e3				.00015 Amp	10.2865 mm
CY14E101I-SFXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		5	5	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	5.5 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	4.5 V	e3				.00025 Amp	10.2865 mm
CY14B101I-SFXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		3	3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	2.7 V	e3	40	260		.00025 Amp	10.2865 mm
CY14V101Q3-SFXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm		1048576 bit	3 V	e3					10.2865 mm
CY14C101Q3A-SF104XIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		2.5	2.5	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	2.6 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	2.4 V	e3				.00015 Amp	10.2865 mm
CY14B512Q3-SFXIT	Infineon Technologies	NON-VOLATILE SRAM		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	3		8	SMALL OUTLINE	SOP16,.4		1.27 mm	85 Cel	3-STATE	64KX8	64K	2.7 V	-40 Cel		DUAL	1	R-PDSO-G16		3.6 V	2.667 mm	40 MHz	7.4925 mm		524288 bit	2.7 V				NO	.005 Amp	10.2865 mm
CY14E256I-SFXI	Infineon Technologies	NON-VOLATILE SRAM MODULE	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		32KX8	32K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	5.5 V	2.667 mm		7.4925 mm	Not Qualified	262144 bit	4.5 V	e3					10.2865 mm
CY14B101P-SFXAT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			10 mA	131072 words			3/3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel		DUAL		R-PDSO-G16						Not Qualified	1048576 bit						.005 Amp
CY14C064PA-SFXI	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	SEPARATE	2.5		8	SMALL OUTLINE	SOP16,.4		1.27 mm	85 Cel	3-STATE	8KX8	8K	2.4 V	-40 Cel		DUAL	1	R-PDSO-G16		2.6 V	2.667 mm	40 MHz	7.4925 mm		65536 bit	2.4 V				NO	.00025 Amp	10.2865 mm
CY14C101Q3A-SFXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		2.5	2.5	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	2.6 V	2.667 mm		7.4925 mm	Not Qualified	1048576 bit	2.4 V	e3				.00015 Amp	10.2865 mm
CY14B256Q3-SFXIT	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words		3	3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G16	3	3.6 V	2.667 mm		7.4925 mm	Not Qualified	262144 bit	2.7 V	e3				.005 Amp	10.2865 mm

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.