18 SRAM 334

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

X2212D

Xicor

NON-VOLATILE SRAM

COMMERCIAL

18

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

256 words

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

256X4

256

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-GDIP-T18

5.5 V

Not Qualified

1024 bit

4.5 V

e0

NO

300 ns

HM1-6561B/883

Intersil

STANDARD SRAM

MILITARY

18

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

7.2 mA

256 words

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

125 Cel

3-STATE

256X4

256

2 V

-55 Cel

TIN LEAD

DUAL

R-GDIP-T18

5.5 V

5.08 mm

7.62 mm

Not Qualified

1024 bit

4.5 V

e0

.00001 Amp

220 ns

X2212D/5

Xicor

NON-VOLATILE SRAM

COMMERCIAL

18

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

256 words

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

256X4

256

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-GDIP-T18

5.5 V

Not Qualified

1024 bit

4.5 V

e0

NO

300 ns

X2212DI

Xicor

NON-VOLATILE SRAM

INDUSTRIAL

18

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

256 words

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

85 Cel

3-STATE

256X4

256

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-GDIP-T18

5.5 V

Not Qualified

1024 bit

4.5 V

e0

NO

300 ns

X2212DMB

Xicor

NON-VOLATILE SRAM

MILITARY

18

DIP

RECTANGULAR

CERAMIC

NO

MOS

38535Q/M;38534H;883B

THROUGH-HOLE

256 words

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

125 Cel

256X4

256

-55 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T18

Not Qualified

1024 bit

e0

300 ns

X2212DMB/10

Xicor

NON-VOLATILE SRAM

MILITARY

18

DIP

RECTANGULAR

CERAMIC

NO

MOS

38535Q/M;38534H;883B

THROUGH-HOLE

256 words

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

125 Cel

256X4

256

-55 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T18

Not Qualified

1024 bit

e0

300 ns

X2212DMB/5

Xicor

NON-VOLATILE SRAM

MILITARY

18

DIP

RECTANGULAR

CERAMIC

NO

MOS

38535Q/M;38534H;883B

THROUGH-HOLE

256 words

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

125 Cel

256X4

256

-55 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T18

Not Qualified

1024 bit

e0

300 ns

8102406VA

Defense Logistics Agency

STANDARD SRAM

MILITARY

18

CERAMIC, GLASS-SEALED

1

CMOS

PARALLEL

ASYNCHRONOUS

4096 words

5

1

IN-LINE

125 Cel

4KX1

4K

-55 Cel

DUAL

5.5 V

Not Qualified

4096 bit

4.5 V

120 ns

NTE2114

Nte Electronics

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

5 V

0 Cel

TIN LEAD

DUAL

R-PDIP-T18

5.25 V

Not Qualified

4096 bit

4.75 V

e0

.1 Amp

300 ns

HM1-6514-8

Intersil

STANDARD SRAM

MILITARY

18

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

14 mA

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

125 Cel

3-STATE

1KX4

1K

2 V

-55 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T18

Not Qualified

4096 bit

e0

.000025 Amp

320 ns

D2001

Intel

NON-VOLATILE SRAM

COMMERCIAL

18

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

128 words

8

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

128X8

128

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T18

Not Qualified

1024 bit

e0

300 ns

D2141L-3

Intel

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

40 mA

4096 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

4KX1

4K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T18

Not Qualified

4096 bit

e0

150 ns

DM85S68N

National Semiconductor

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

TTL

THROUGH-HOLE

PARALLEL

SYNCHRONOUS

16 words

5

4

IN-LINE

DIP18,.3

Other Memory ICs

2.54 mm

70 Cel

3-STATE

16X4

16

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T18

5.25 V

5.08 mm

7.62 mm

Not Qualified

64 bit

4.75 V

e0

YES

21.755 mm

MCM2114P20

Motorola

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

TIN LEAD

DUAL

R-PDIP-T18

Not Qualified

4096 bit

e0

200 ns

MCM2114P45

Motorola

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T18

Not Qualified

4096 bit

e0

450 ns

TC5514AP-3

Toshiba

STANDARD SRAM

OTHER

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

85 Cel

3-STATE

1KX4

1K

2 V

-30 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T18

Not Qualified

4096 bit

e0

.00002 Amp

300 ns

TMS2114-15NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

150 ns

TMS2147-5NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

180 mA

4096 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

4KX1

4K

4.5 V

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

55 ns

TMS2147-9NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

4096 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

4KX1

4K

4.5 V

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

90 ns

TMS2114-45NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

450 ns

TMS40L45-45NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

450 ns

MM2114N-2

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

5

4

IN-LINE

70 Cel

1KX4

1K

0 Cel

TIN LEAD

DUAL

R-PDIP-T18

5.25 V

4096 bit

4.75 V

e0

200 ns

TMS4042-1JL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

256 words

COMMON

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

256X4

256

0 Cel

DUAL

R-XDIP-T18

Not Qualified

1024 bit

NOT SPECIFIED

NOT SPECIFIED

650 ns

TMS4044-25JL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

55 mA

4096 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

4KX1

4K

2.4 V

0 Cel

DUAL

R-XDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

250 ns

TMS2147H-3NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

4096 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

4KX1

4K

4.5 V

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

35 ns

MM2114N-25

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

5

4

IN-LINE

70 Cel

1KX4

1K

0 Cel

DUAL

R-PDIP-T18

5.25 V

Not Qualified

4096 bit

4.75 V

250 ns

M38510/23806BVX

Texas Instruments

STANDARD SRAM

MILITARY

18

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

5

4

IN-LINE

125 Cel

1KX4

1K

-55 Cel

DUAL

R-GDIP-T18

5.5 V

Not Qualified

4096 bit

4.5 V

70 ns

TMS4044-25NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

55 mA

4096 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

4KX1

4K

2.4 V

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

250 ns

MM2114N-L

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

5

4

IN-LINE

70 Cel

1KX4

1K

0 Cel

DUAL

R-PDIP-T18

5.25 V

Not Qualified

4096 bit

4.75 V

450 ns

MM2114N

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

5

4

IN-LINE

70 Cel

1KX4

1K

0 Cel

DUAL

R-PDIP-T18

5.25 V

Not Qualified

4096 bit

4.75 V

450 ns

TMS40L44-45NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

40 mA

4096 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

4KX1

4K

2.4 V

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

450 ns

TMS4045-25JDL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

DUAL

R-XDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

250 ns

MM2114N-3

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

5

4

IN-LINE

70 Cel

1KX4

1K

0 Cel

DUAL

R-PDIP-T18

5.25 V

Not Qualified

4096 bit

4.75 V

300 ns

TMS40L45-25NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

250 ns

TMS2147H-4JL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

4096 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

4KX1

4K

4.5 V

0 Cel

DUAL

R-XDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

45 ns

TMS4045-45JL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

DUAL

R-XDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

450 ns

M38510/28903BYX

Texas Instruments

STANDARD SRAM

MILITARY

18

DFP

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

4096 words

5

1

FLATPACK

125 Cel

4KX1

4K

-55 Cel

DUAL

R-XDFP-F18

5.5 V

Not Qualified

4096 bit

4.5 V

55 ns

MM2114J-3-MIL

Texas Instruments

STANDARD SRAM

18

DIP

RECTANGULAR

CERAMIC

NO

MOS

MIL-STD-883 Class B (Modified)

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

3-STATE

1KX4

1K

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T18

Not Qualified

4096 bit

e0

300 ns

MM54C910N

Texas Instruments

STANDARD SRAM

MILITARY

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

64 words

5

4

IN-LINE

2.54 mm

125 Cel

64X4

64

-55 Cel

DUAL

R-PDIP-T18

5.5 V

5.08 mm

7.62 mm

256 bit

4.5 V

21.78 mm

860 ns

TMS2149-5JL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

DUAL

R-XDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

55 ns

TMS2114-20NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

200 ns

TMS4044-20NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

55 mA

4096 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

4KX1

4K

2.4 V

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

200 ns

TMS2149-3NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

35 ns

TMS40L44-15NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

4096 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

4KX1

4K

2.4 V

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

150 ns

TMS2149-4JL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

DUAL

R-XDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

45 ns

TMS2114L-15NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

150 ns

TMS2147H-5NL

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

4096 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

4KX1

4K

4.5 V

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

55 ns

5962-01-138-3376

Texas Instruments

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

5

5

4

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

DUAL

R-PDIP-T18

Not Qualified

4096 bit

NOT SPECIFIED

NOT SPECIFIED

250 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.