18 SRAM 334

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
HM6147LP	Renesas Electronics	STANDARD SRAM		18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5		1	IN-LINE	DIP18,.3		2.54 mm	70 Cel	3-STATE	4KX1	4K	2 V	0 Cel		DUAL	R-PDIP-T18	5.5 V		7.62 mm		4096 bit	4.5 V		NO	.02 Amp
UPD2111ALC-4	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words	COMMON			4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256X4	256		-10 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18				Not Qualified	1024 bit		e0				450 ns
HM6147H-55	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18				Not Qualified	4096 bit		e0		.0008 Amp		55 ns
HM3-6504S-9+	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	31 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX1	4K	2 V	-40 Cel	TIN LEAD	DUAL	R-PDIP-T18					4096 bit		e0		.000015 Amp		120 ns
HM6147-3	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18				Not Qualified	4096 bit		e0		.0008 Amp		55 ns
HM3-6504B-9+	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	19 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX1	4K	2 V	-40 Cel	TIN LEAD	DUAL	R-PDIP-T18					4096 bit		e0		.000015 Amp		220 ns
HS4-65142RH-8	Renesas Electronics	STANDARD SRAM	MILITARY	18	QCCN		RECTANGULAR	500k Rad(Si)	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	CHIP CARRIER	LCC18,.35X.42	SRAMs	1.27 mm	125 Cel	3-STATE	1KX4	1K	4.5 V	-55 Cel		QUAD	R-XQCC-N18				Not Qualified	4096 bit
HM6147P	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	4096 bit		e0		.0008 Amp		70 ns
HM6147HP-35	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		1	IN-LINE			2.54 mm	70 Cel		4KX1	4K		0 Cel		DUAL	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	4096 bit	4.5 V				22 mm	35 ns
UPD2114LC	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	4096 bit		e0				450 ns
P2114	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE				70 Cel		1KX4	1K		0 Cel		DUAL	R-PDIP-T18	5.25 V				4096 bit	4.75 V					450 ns
HM3-6514S-9+	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	31 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-40 Cel	TIN LEAD	DUAL	R-PDIP-T18					4096 bit		e0		.000015 Amp		120 ns
HM1-6514S/883	Renesas Electronics	STANDARD SRAM	MILITARY	18	DIP		RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	PIN/PEG	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE				125 Cel		1KX4	1K		-55 Cel		DUAL	R-CDIP-P18	5.5 V				4096 bit	4.5 V					120 ns
5962-01-219-9861	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-40 Cel		DUAL	R-PDIP-T18				Not Qualified	4096 bit				.00001 Amp		450 ns
HM6147	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18				Not Qualified	4096 bit		e0		.0008 Amp		70 ns
HM3-6504-9+	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	14 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX1	4K	2 V	-40 Cel	TIN LEAD	DUAL	R-PDIP-T18					4096 bit		e0		.000015 Amp		320 ns
M38510/24502BVX	Renesas Electronics	STANDARD SRAM	MILITARY	18	DIP		RECTANGULAR		UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE				125 Cel		1KX4	1K		-55 Cel	TIN LEAD	DUAL	R-XDIP-T18	5.5 V			Not Qualified	4096 bit	4.5 V	e0				120 ns
UPD4104C-2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	4096 bit		e0				200 ns
UPD421002C-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			80 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	1048576 bit		e0		.001 Amp		70 ns
UPD421002C-60	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			90 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	1048576 bit		e0		.001 Amp		60 ns
UPD444C-1	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	4096 bit		e0		.00001 Amp		300 ns
UPD4104D-2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18				Not Qualified	4096 bit		e0				200 ns
UPD444C-3	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	4096 bit		e0		.00001 Amp		200 ns
UPD421002C-10	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			60 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	1048576 bit		e0		.001 Amp		100 ns
UPD4104D-3	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18				Not Qualified	4096 bit		e0				150 ns
UPD4104D-33	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18				Not Qualified	4096 bit		e0				150 ns
UPD4104C-35	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	4096 bit		e0				120 ns
UPD4104C-36	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	4096 bit		e0				85 ns
UPD4104D-35	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18				Not Qualified	4096 bit		e0				120 ns
UPD4104C-3	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	4096 bit		e0				150 ns
UPD4104D-30	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	21 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18				Not Qualified	4096 bit		e0				300 ns
UPD444C-2	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	4096 bit		e0		.00001 Amp		250 ns
UPD4104C-1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	21 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	4096 bit		e0				250 ns
UPD4104C-33	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	4096 bit		e0				150 ns
UPD421002C-12	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE				1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	1048576 bit		e0				120 ns
UPD421002C-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			70 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	1048576 bit		e0		.001 Amp		80 ns
UPD4104C	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	21 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	4096 bit		e0				300 ns
UPD4104D-1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	21 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18				Not Qualified	4096 bit		e0				250 ns
UPD4104D-36	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18				Not Qualified	4096 bit		e0				85 ns
UPD4104C-32	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	21 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	4096 bit		e0				200 ns
UPD4104D-32	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	21 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18				Not Qualified	4096 bit		e0				200 ns
UPD4104D	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	21 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18				Not Qualified	4096 bit		e0				300 ns
UPD4104C-30	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	21 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	4096 bit		e0				300 ns
UPD444C	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	18	DIP		RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	4096 bit		e0		.00001 Amp		450 ns
MT4C1026-15	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR		PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE				1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18				Not Qualified	1048576 bit		e0				150 ns
MT4C1026C15	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR		CERAMIC	NO		CMOS		THROUGH-HOLE				1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18				Not Qualified	1048576 bit		e0				150 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.