18 SRAM 334

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IMS1203P-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	3.988 mm	7.62 mm	Not Qualified	4096 bit	4.5 V	e0	NO	.006 Amp	22.86 mm	45 ns
IMS1223S-45M	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	125 Cel	3-STATE	1KX4	1K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V	e0	NO	.005 Amp	22.86 mm	45 ns
5962-8751305XC	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		1024 words		5		4	FLATPACK			1.194 mm	125 Cel	3-STATE	1KX4	1K		-55 Cel	GOLD	DUAL	1	R-CDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V	e4	NO		10.973 mm	35 ns
5962-8751306VX	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE			2.54 mm	125 Cel		1KX4	1K		-55 Cel	GOLD	DUAL		R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V	e4			22.86 mm	45 ns
IMS1223S-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V	e0	NO	.006 Amp	22.86 mm	25 ns
IMS1203P-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	3.988 mm	7.62 mm	Not Qualified	4096 bit	4.5 V	e0	NO	.006 Amp	22.86 mm	35 ns
5962-8751304XA	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		1024 words		5		4	FLATPACK			1.194 mm	125 Cel		1KX4	1K		-55 Cel	GOLD	DUAL		R-CDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V	e4			10.973 mm	25 ns
5962-8751305VX	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE			2.54 mm	125 Cel		1KX4	1K		-55 Cel	GOLD	DUAL		R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V	e4			22.86 mm	35 ns
5962-8751303VC	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	4KX1	4K		-55 Cel	GOLD	DUAL	1	R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V	e4	NO		22.86 mm	45 ns
5962-8751306XA	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		1024 words		5		4	FLATPACK			1.194 mm	125 Cel		1KX4	1K		-55 Cel	GOLD	DUAL		R-CDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V	e4			10.973 mm	45 ns
5962-8751302XC	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		1	FLATPACK			1.194 mm	125 Cel	3-STATE	4KX1	4K		-55 Cel	GOLD	DUAL	1	R-CDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V	e4	NO		10.973 mm	35 ns
IMS1223S-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V	e0	NO	.006 Amp	22.86 mm	45 ns
5962-8751301VC	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	4KX1	4K		-55 Cel	GOLD	DUAL	1	R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V	e4	NO		22.86 mm	25 ns
IMS1203P-20S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	4096 bit		e0		.006 Amp		20 ns
5962-8751301VX	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		1	IN-LINE			2.54 mm	125 Cel		4KX1	4K		-55 Cel	GOLD	DUAL		R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V	e4			22.86 mm	25 ns
IMS1203A-45M	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	FLATPACK	FL18,.3	SRAMs	1.194 mm	125 Cel	3-STATE	4KX1	4K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V	e0	NO	.005 Amp	10.973 mm	45 ns
5962-8751304VX	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE			2.54 mm	125 Cel		1KX4	1K		-55 Cel	GOLD	DUAL		R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V	e4			22.86 mm	25 ns
5962-8751304VC	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	1KX4	1K		-55 Cel	GOLD	DUAL	1	R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V	e4	NO		22.86 mm	25 ns
IMS1203A-35M	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	FLATPACK	FL18,.3	SRAMs	1.194 mm	125 Cel	3-STATE	4KX1	4K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V	e0	NO	.005 Amp	10.973 mm	35 ns
5962-8751301XX	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		1	FLATPACK			1.194 mm	125 Cel		4KX1	4K		-55 Cel	GOLD	DUAL		R-CDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V	e4			10.973 mm	25 ns
IMS1223S-35M	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	125 Cel	3-STATE	1KX4	1K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V	e0	NO	.005 Amp	22.86 mm	35 ns
IMS1203S-35M	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX1	4K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V	e0	NO	.005 Amp	22.86 mm	35 ns
5962-8751302XA	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		1	FLATPACK			1.194 mm	125 Cel		4KX1	4K		-55 Cel	GOLD	DUAL		R-CDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V	e4			10.973 mm	35 ns
M38510/23801BVX	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		1	IN-LINE				125 Cel		4KX1	4K		-55 Cel		DUAL		R-GDIP-T18	5.5 V			Not Qualified	4096 bit	4.5 V					85 ns
IMS1203S-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V	e0	NO	.006 Amp	22.86 mm	25 ns
IMS1203S-20S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	4096 bit		e0		.006 Amp		20 ns
IMS1223S-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V	e0	NO	.006 Amp	22.86 mm	35 ns
IMS1203P-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	3.988 mm	7.62 mm	Not Qualified	4096 bit	4.5 V	e0	NO	.006 Amp	22.86 mm	25 ns
5962-8751301XA	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		1	FLATPACK			1.194 mm	125 Cel		4KX1	4K		-55 Cel	GOLD	DUAL		R-CDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V	e4			10.973 mm	25 ns
ET2147HJ1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel		DUAL		R-XDIP-T18				Not Qualified	4096 bit						35 ns
ET2147HJ3	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel		DUAL		R-XDIP-T18				Not Qualified	4096 bit						55 ns
IMS1223A-25M	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	4	FLATPACK	FL18,.3	SRAMs	1.194 mm	125 Cel	3-STATE	1KX4	1K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V	e0	NO	.005 Amp	10.973 mm	25 ns
5962-8751302VC	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	4KX1	4K		-55 Cel	GOLD	DUAL	1	R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V	e4	NO		22.86 mm	35 ns
5962-8751302VA	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		1	IN-LINE			2.54 mm	125 Cel		4KX1	4K		-55 Cel	GOLD	DUAL		R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V	e4			22.86 mm	35 ns
IMS1203A-25M	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	FLATPACK	FL18,.3	SRAMs	1.194 mm	125 Cel	3-STATE	4KX1	4K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V	e0	NO	.005 Amp	10.973 mm	25 ns
5962-8751303VA	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		1	IN-LINE			2.54 mm	125 Cel		4KX1	4K		-55 Cel	GOLD	DUAL		R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V	e4			22.86 mm	45 ns
5962-8751303XA	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		1	FLATPACK			1.194 mm	125 Cel		4KX1	4K		-55 Cel	GOLD	DUAL		R-CDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V	e4			10.973 mm	45 ns
IMS1223P-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	3.988 mm	7.62 mm	Not Qualified	4096 bit	4.5 V	e0	NO	.006 Amp	22.86 mm	25 ns
5962-8751304XX	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		1024 words		5		4	FLATPACK			1.194 mm	125 Cel		1KX4	1K		-55 Cel	GOLD	DUAL		R-CDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V	e4			10.973 mm	25 ns
ET2147HN3	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel		DUAL		R-PDIP-T18				Not Qualified	4096 bit						55 ns
IMS1223S-20S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18				Not Qualified	4096 bit		e0		.006 Amp		20 ns
5962-8751301XC	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		1	FLATPACK			1.194 mm	125 Cel	3-STATE	4KX1	4K		-55 Cel	GOLD	DUAL	1	R-CDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V	e4	NO		10.973 mm	25 ns
8403605JX	STMicroelectronics	STANDARD SRAM	MILITARY	18			CERAMIC, GLASS-SEALED		1	CMOS			PARALLEL	ASYNCHRONOUS		4096 words		5		1	IN-LINE				125 Cel		4KX1	4K		-55 Cel		DUAL			5.5 V				4096 bit	4.5 V					120 ns
IMS1223P-20S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18				Not Qualified	4096 bit		e0		.006 Amp		20 ns
IMS1223P-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18	5.5 V	3.988 mm	7.62 mm	Not Qualified	4096 bit	4.5 V	e0	NO	.006 Amp	22.86 mm	45 ns
5962-8751303VX	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		1	IN-LINE			2.54 mm	125 Cel		4KX1	4K		-55 Cel	GOLD	DUAL		R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V	e4			22.86 mm	45 ns
IMS1203S-25M	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX1	4K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18	5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V	e0	NO	.005 Amp	22.86 mm	25 ns
IMS1223A-45M	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	4	FLATPACK	FL18,.3	SRAMs	1.194 mm	125 Cel	3-STATE	1KX4	1K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F18	5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V	e0	NO	.005 Amp	10.973 mm	45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.