18 SRAM 334

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Nominal Negative Supply Voltage	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
5962-8751306VA	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE			2.54 mm	125 Cel		1KX4	1K		-55 Cel	GOLD	DUAL		R-CDIP-T18	5.5 V			7.62 mm	Not Qualified	4096 bit	4.5 V		e4			22.86 mm	45 ns
5962-8751305VC	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	1KX4	1K		-55 Cel	GOLD	DUAL	1	R-CDIP-T18	5.5 V			7.62 mm	Not Qualified	4096 bit	4.5 V		e4	NO		22.86 mm	35 ns
8403604JX	STMicroelectronics	STANDARD SRAM	MILITARY	18				CERAMIC, GLASS-SEALED		1	CMOS				PARALLEL	ASYNCHRONOUS		4096 words		5		1	IN-LINE				125 Cel		4KX1	4K		-55 Cel		DUAL			5.5 V					4096 bit	4.5 V						120 ns
N74F410N	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL			THROUGH-HOLE	PARALLEL	SYNCHRONOUS		16 words		5		4	IN-LINE				70 Cel	3-STATE	16X4	16		0 Cel		DUAL		R-PDIP-T18	5.5 V				Not Qualified	64 bit	4.5 V						10 ns
8602301FA	NXP Semiconductors	STANDARD SRAM	MILITARY	18	DFP		RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS	38535Q/M;38534H;883B		FLAT	PARALLEL	ASYNCHRONOUS	120 mA	4096 words		5	5	1	IN-LINE	FL16,.3	SRAMs	1.27 mm	125 Cel	3-STATE	4KX1	4K		-55 Cel		DUAL		R-XDFP-F16	5.5 V				Qualified	4096 bit	4.5 V						120 ns
8602301EA	NXP Semiconductors	STANDARD SRAM	MILITARY	18	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words		5	5	1	IN-LINE	DIP16,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX1	4K		-55 Cel		DUAL		R-XDIP-T16	5.5 V				Qualified	4096 bit	4.5 V						120 ns
HYB511002-12	Infineon Technologies	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE				1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	1048576 bit			e0				120 ns
HYB511002-10	Infineon Technologies	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE				1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	1048576 bit			e0				100 ns
DS2015	Maxim Integrated	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	SERIAL	ASYNCHRONOUS	6 mA	32 words	COMMON			8	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	32X8	32		0 Cel	Tin/Lead (Sn/Pb)	DUAL	4, (3 LINE)	R-PDIP-T18			4 MHz		Not Qualified				e0		.006 Amp
TMM314APL	Toshiba	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0				450 ns
TC5514P-2	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0		.00002 Amp		800 ns
TC5504ADL-3	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX1	4K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4096 bit			e0		.000001 Amp		300 ns
TC511002P-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE			70 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	1048576 bit			e0		.001 Amp		85 ns
TC511002P-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE			50 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	1048576 bit			e0		.001 Amp		120 ns
TMM315D	Toshiba	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	CERAMIC	NO		MOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4096 bit			e0				70 ns
TC5504APL-2	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX1	4K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0		.000001 Amp		200 ns
TC5514AP	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0		.00002 Amp		200 ns
TC5504AD-2	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX1	4K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4096 bit			e0		.00002 Amp		200 ns
TC5504P-1	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX1	4K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0		.00002 Amp		550 ns
TC5514ADL-2	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4096 bit			e0		.000001 Amp		200 ns
TC5504APL-3	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX1	4K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0		.000001 Amp		300 ns
TC5514AD	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4096 bit			e0		.00002 Amp		200 ns
TC5504AP-2	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX1	4K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18	5.5 V	5 mm		7.62 mm	Not Qualified	4096 bit	4.5 V	LG-MAX; IT IS ALSO OFFERED IN CERDIP PACKAGE	e0		.00002 Amp	22.8 mm	200 ns
TMM315D-1	Toshiba	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	CERAMIC	NO		MOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4096 bit			e0				55 ns
TMM314APL-1	Toshiba		COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE			2.54 mm	70 Cel		1KX4	1K		0 Cel	TIN LEAD	DUAL		R-PDIP-T18	5.5 V	5 mm		7.62 mm		4096 bit	4.5 V	LG-MAX	e0			22.8 mm	200 ns
TC5504P	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX1	4K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0		.00002 Amp		450 ns
TMM2114AP-15	Toshiba	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0				150 ns
TC5504ADL-2	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX1	4K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4096 bit			e0		.000001 Amp		200 ns
TC5514AP-2	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0		.00002 Amp		200 ns
TC5504AP-3	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX1	4K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18	5.5 V	5 mm		7.62 mm	Not Qualified	4096 bit	4.5 V	LG-MAX; IT IS ALSO OFFERED IN CERDIP PACKAGE	e0		.00002 Amp	22.8 mm	300 ns
TMM314APL-3	Toshiba	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0				300 ns
TMM314AP-3	Toshiba	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0				300 ns
TC5514P	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0		.00002 Amp		450 ns
TC5504AD-3	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX1	4K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4096 bit			e0		.00002 Amp		300 ns
TC5514ADL-3	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4096 bit			e0		.000001 Amp		300 ns
TC5504P-2	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	4KX1	4K		-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0		.00002 Amp		800 ns
TC5514P-1	Toshiba	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-30 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0		.00002 Amp		650 ns
TC511002P-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE			60 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	1048576 bit			e0		.001 Amp		100 ns
TMM314AP	Toshiba	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0				450 ns
TMM314AP-1	Toshiba	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0				200 ns
UPB100470D-15	Renesas Electronics	STANDARD SRAM	OTHER	18	DIP		RECTANGULAR	CERAMIC	NO				-4.5 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	SEPARATE		-4.5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel		4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4096 bit			e0				15 ns
UPB10470D-15	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	CERAMIC	NO				-5.2 V	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	220 mA	4096 words	SEPARATE		-5.2	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel		4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4096 bit			e0				15 ns
HM3-6514-9+	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	14 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDIP-T18						4096 bit			e0		.000015 Amp		320 ns
UPD2114LC-3	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0				200 ns
UPD2114LC-1	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	4096 bit			e0				300 ns
HM6147H-35	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	CERAMIC	NO		CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4096 bit			e0		.0008 Amp		35 ns
HM6147HP-45	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		1	IN-LINE			2.54 mm	70 Cel		4KX1	4K		0 Cel		DUAL		R-PDIP-T18	5.5 V	5.08 mm		7.62 mm	Not Qualified	4096 bit	4.5 V					22 mm	45 ns
P2114L2	Renesas Electronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	TTL			THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE				70 Cel		1KX4	1K		0 Cel		DUAL		R-PDIP-T18	5.25 V					4096 bit	4.75 V						200 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.