18 SRAM 334

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
M38510/23807BVX	Texas Instruments	STANDARD SRAM	MILITARY	18	DIP		RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		1	IN-LINE				125 Cel		4KX1	4K		-55 Cel		DUAL		R-GDIP-T18		5.5 V			Not Qualified	4096 bit	4.5 V								45 ns
M38510/28902BVX	Texas Instruments	STANDARD SRAM	MILITARY	18	DIP		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE				125 Cel		1KX4	1K		-55 Cel		DUAL		R-XDIP-T18		5.5 V			Not Qualified	4096 bit	4.5 V								35 ns
TMS2147-7NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel		DUAL		R-PDIP-T18					Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				70 ns
TMS2114L-25NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel		DUAL		R-PDIP-T18					Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				250 ns
TMS4044-30JL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	2.4 V	0 Cel		DUAL		R-XDIP-T18					Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				300 ns
TMS4045-30NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel		DUAL		R-PDIP-T18					Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				300 ns
NMC6514J-9	Texas Instruments	STANDARD SRAM	INDUSTRIAL	18	DIP		RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1KX4	1K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4096 bit			e0				.000025 Amp		320 ns
TMS4045-45NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel		DUAL		R-PDIP-T18					Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				450 ns
TMS2114-25NL	Texas Instruments	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K		0 Cel		DUAL		R-PDIP-T18					Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				250 ns
TMS4C1027-15N	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE				1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M		0 Cel		DUAL		R-PDIP-T18					Not Qualified	1048576 bit									150 ns
CAT22C10LE20	Onsemi	NON-VOLATILE SRAM	AUTOMOTIVE	18			RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	64 words	COMMON	5		4					125 Cel	3-STATE	64X4	64	4.5 V	-40 Cel		DUAL	1	R-PDIP-T18		5.5 V			Not Qualified	256 bit	4.5 V					NO	.00003 Amp		200 ns
CAT22C10LE30	Onsemi	NON-VOLATILE SRAM	AUTOMOTIVE	18			RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	64 words	COMMON	5		4					125 Cel	3-STATE	64X4	64	4.5 V	-40 Cel		DUAL	1	R-PDIP-T18		5.5 V			Not Qualified	256 bit	4.5 V					NO	.00003 Amp		300 ns
CAT22C10LI-20T1	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	85 Cel		64X4	64		-40 Cel		DUAL		R-PDIP-T18		5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V							22.73 mm	200 ns
CAT22C10L-20	Onsemi	NON-VOLATILE SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	70 Cel		64X4	64		0 Cel	MATTE TIN	DUAL		R-PDIP-T18		5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e3					21.97 mm	200 ns
CAT22C10PI-30	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	85 Cel		64X4	64		-40 Cel	TIN LEAD	DUAL		R-PDIP-T18		5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V	DATA RETENTION > 10 YEARS	e0					21.97 mm	300 ns
CAT22C10LA-20	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	105 Cel		64X4	64		-40 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T18		5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e3	40	260			21.97 mm	200 ns
CAT22C10LE-30T1	Onsemi	NON-VOLATILE SRAM	AUTOMOTIVE	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	125 Cel		64X4	64		-40 Cel		DUAL		R-PDIP-T18		5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V							22.73 mm	300 ns
CAT22C10PA-20	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	105 Cel		64X4	64		-40 Cel	TIN LEAD	DUAL		R-PDIP-T18		5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e0					21.97 mm	200 ns
CAT22C10PA-30	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	105 Cel		64X4	64		-40 Cel	TIN LEAD	DUAL		R-PDIP-T18		5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e0					21.97 mm	300 ns
CAT22C10LI30	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	18			RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	64 words	COMMON	5	5	4			SRAMs		85 Cel	3-STATE	64X4	64	4.5 V	-40 Cel		DUAL	1	R-PDIP-T18	1	5.5 V			Not Qualified	256 bit	4.5 V				225	NO	.00003 Amp		300 ns
CAT22C10P-20	Onsemi	NON-VOLATILE SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	70 Cel		64X4	64		0 Cel	TIN LEAD	DUAL		R-PDIP-T18		5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V	DATA RETENTION > 10 YEARS	e0					21.97 mm	200 ns
CAT22C10P-30	Onsemi	NON-VOLATILE SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	70 Cel		64X4	64		0 Cel	TIN LEAD	DUAL		R-PDIP-T18		5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V	DATA RETENTION > 10 YEARS	e0					21.97 mm	300 ns
CAT22C10LI20	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	18			RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	64 words	COMMON	5	5	4			SRAMs		85 Cel	3-STATE	64X4	64	4.5 V	-40 Cel		DUAL	1	R-PDIP-T18		5.5 V			Not Qualified	256 bit	4.5 V		e3	NOT SPECIFIED	NOT SPECIFIED	NO	.00003 Amp		200 ns
CAT22C10LA-30	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	105 Cel		64X4	64		-40 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T18		5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e3	40	260			21.97 mm	300 ns
CAT22C10LI-30T1	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	85 Cel		64X4	64		-40 Cel		DUAL		R-PDIP-T18		5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V							22.73 mm	300 ns
CAT22C10LE-20T1	Onsemi	NON-VOLATILE SRAM	AUTOMOTIVE	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	125 Cel		64X4	64		-40 Cel		DUAL		R-PDIP-T18		5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V							22.73 mm	200 ns
CAT22C10L-30	Onsemi	NON-VOLATILE SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	70 Cel		64X4	64		0 Cel	MATTE TIN	DUAL		R-PDIP-T18		5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V		e3					21.97 mm	300 ns
CAT22C10PI-20	Onsemi	NON-VOLATILE SRAM	INDUSTRIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		4	IN-LINE			2.54 mm	85 Cel		64X4	64		-40 Cel	TIN LEAD	DUAL		R-PDIP-T18		5.5 V	4.57 mm	7.62 mm	Not Qualified	256 bit	4.5 V	DATA RETENTION > 10 YEARS	e0					21.97 mm	200 ns
IMS1203S-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T18		5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V		e0			NO	.006 Amp	22.86 mm	35 ns
5962-8751304XC	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		1024 words		5		4	FLATPACK			1.194 mm	125 Cel	3-STATE	1KX4	1K		-55 Cel	GOLD	DUAL	1	R-CDFP-F18		5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V		e4			NO		10.973 mm	25 ns
IMS1223A-35M	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP		RECTANGULAR	UNSPECIFIED	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	4	FLATPACK	FL18,.3	SRAMs	1.194 mm	125 Cel	3-STATE	1KX4	1K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-XDFP-F18		5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V		e0			NO	.005 Amp	10.973 mm	35 ns
IMS1223S-25M	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	110 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	125 Cel	3-STATE	1KX4	1K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18		5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V		e0			NO	.005 Amp	22.86 mm	25 ns
5962-8751303XX	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		1	FLATPACK			1.194 mm	125 Cel		4KX1	4K		-55 Cel	GOLD	DUAL		R-CDFP-F18		5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V		e4					10.973 mm	45 ns
IMS1203S-45M	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	125 Cel	3-STATE	4KX1	4K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T18		5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V		e0			NO	.005 Amp	22.86 mm	45 ns
5962-8751304VA	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE			2.54 mm	125 Cel		1KX4	1K		-55 Cel	GOLD	DUAL		R-CDIP-T18		5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V		e4					22.86 mm	25 ns
5962-8751306XC	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		1024 words		5		4	FLATPACK			1.194 mm	125 Cel	3-STATE	1KX4	1K		-55 Cel	GOLD	DUAL	1	R-CDFP-F18		5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V		e4			NO		10.973 mm	45 ns
5962-8751306VC	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	1KX4	1K		-55 Cel	GOLD	DUAL	1	R-CDIP-T18		5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V		e4			NO		22.86 mm	45 ns
5962-8751306XX	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		1024 words		5		4	FLATPACK			1.194 mm	125 Cel		1KX4	1K		-55 Cel	GOLD	DUAL		R-CDFP-F18		5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V		e4					10.973 mm	45 ns
ET2147HN1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel		DUAL		R-PDIP-T18					Not Qualified	4096 bit									35 ns
IMS1223P-35	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T18		5.5 V	3.988 mm	7.62 mm	Not Qualified	4096 bit	4.5 V		e0			NO	.006 Amp	22.86 mm	35 ns
5962-8751302XX	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		1	FLATPACK			1.194 mm	125 Cel		4KX1	4K		-55 Cel	GOLD	DUAL		R-CDFP-F18		5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V		e4					10.973 mm	35 ns
5962-8751301VA	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		1	IN-LINE			2.54 mm	125 Cel		4KX1	4K		-55 Cel	GOLD	DUAL		R-CDIP-T18		5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V		e4					22.86 mm	25 ns
5962-8751303XC	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		1	FLATPACK			1.194 mm	125 Cel	3-STATE	4KX1	4K		-55 Cel	GOLD	DUAL	1	R-CDFP-F18		5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V		e4			NO		10.973 mm	45 ns
ET2147HN2	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	180 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel		DUAL		R-PDIP-T18					Not Qualified	4096 bit									45 ns
5962-8751305XX	STMicroelectronics	STANDARD SRAM	MILITARY	18	DFP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		1024 words		5		4	FLATPACK			1.194 mm	125 Cel		1KX4	1K		-55 Cel	GOLD	DUAL		R-CDFP-F18		5.5 V	2.235 mm		Not Qualified	4096 bit	4.5 V		e4					10.973 mm	35 ns
5962-8751302VX	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		1	IN-LINE			2.54 mm	125 Cel		4KX1	4K		-55 Cel	GOLD	DUAL		R-CDIP-T18		5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V		e4					22.86 mm	35 ns
IMS1203S-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	18	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	4096 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-CDIP-T18		5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V		e0			NO	.006 Amp	22.86 mm	45 ns
5962-8751305VA	STMicroelectronics	STANDARD SRAM	MILITARY	18	DIP		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words		5		4	IN-LINE			2.54 mm	125 Cel		1KX4	1K		-55 Cel	GOLD	DUAL		R-CDIP-T18		5.5 V		7.62 mm	Not Qualified	4096 bit	4.5 V		e4					22.86 mm	35 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.