28 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MK48Z19B-15	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	9.652 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.003 Amp		150 ns
MK48S74N20	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.25 V	4.57 mm	7.62 mm	Not Qualified	65536 bit	4.75 V	OPEN DRAIN MATCH OUTPUT	e0			YES	.16 Amp	34.67 mm	20 ns
IMS1630LP12S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.00007 Amp		120 ns
M68AF031AM70MS1F	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel		DUAL		R-PDSO-G28		5.5 V	2.79 mm	7.505 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	260		.000006 Amp	18.22 mm	70 ns
IMS1630S-70	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL		R-XDIP-T28					Not Qualified	65536 bit			e0				.014 Amp		70 ns
IMS1624W-35S	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel		3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	QUAD		R-XQCC-N28					Not Qualified	65536 bit			e0				.014 Amp		35 ns
5962-8685912XA	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER			1.27 mm	125 Cel		3-STATE	16KX4	16K		-55 Cel	TIN LEAD	QUAD	1	R-CQCC-N28		5.5 V	1.981 mm	8.89 mm	Not Qualified	65536 bit	4.5 V		e0			YES		13.97 mm	70 ns
IMS1820N-25	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	QUAD	1	R-CQCC-N28		5.5 V	1.981 mm	8.89 mm	Not Qualified	262144 bit	4.5 V		e0			NO	.01 Amp	13.97 mm	25 ns
MK48S74N-22	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	8192 words		5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.334 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.15 Amp	31.75 mm	25 ns
5962-8952402YX	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	125 Cel			64KX4	64K		-55 Cel		QUAD		R-CQCC-N28		5.5 V	2.03 mm	8.89 mm	Not Qualified	262144 bit	4.5 V							13.97 mm	55 ns
5962-8552505XX	STMicroelectronics	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	125 Cel			8KX8	8K		-55 Cel		DUAL		R-CDIP-T28		5.5 V	3.937 mm	15.24 mm	Not Qualified	65536 bit	4.5 V							35.56 mm	55 ns
M68AW031AL70NS1F	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	1.5 V	0 Cel		DUAL		R-PDSO-G28		3.6 V	1.25 mm	8 mm	Not Qualified	262144 bit	2.7 V			NOT SPECIFIED	260		.000006 Amp	11.8 mm	70 ns
MK48H64UN70	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.000002 Amp		70 ns
5962-8952403YA	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		65536 words		5		4	CHIP CARRIER			1.27 mm	125 Cel			64KX4	64K		-55 Cel	TIN LEAD	QUAD		R-CQCC-N28		5.5 V	2.03 mm	8.89 mm	Not Qualified	262144 bit	4.5 V		e0					13.97 mm	45 ns
5962-8685911XX	STMicroelectronics	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		4	CHIP CARRIER			1.27 mm	125 Cel			16KX4	16K		-55 Cel		QUAD		R-XQCC-N28		5.5 V	1.981 mm	8.89 mm	Not Qualified	65536 bit	4.5 V							13.97 mm	70 ns
M624256-15E1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	175 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.68 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0005 Amp	17.935 mm	15 ns
IMS1820N-45	STMicroelectronics	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	QUAD	1	R-CQCC-N28		5.5 V	1.981 mm	8.89 mm	Not Qualified	262144 bit	4.5 V		e0			NO	.01 Amp	13.97 mm	45 ns
MK48S75N-25	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V		15.24 mm	Not Qualified	65536 bit	4.5 V		e0			YES	.15 Amp	31.75 mm	25 ns
M48Z35AY-100MH6	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE				85 Cel			32KX8	32K		-40 Cel		DUAL		R-PDSO-G28		5.5 V			Not Qualified	262144 bit	4.5 V								100 ns
M48Z35AV-10MH6	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel			32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e0				.003 Amp	18.1 mm	100 ns
M48Z35AV-100MH1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e0				.003 Amp	18.1 mm	100 ns
M48Z59-70PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm	15.24 mm	Not Qualified	65536 bit	4.75 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e0			YES	.003 Amp	39.625 mm	70 ns
M48Z35V-100MH6TR	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel			32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	BATTERY BACKUP; WRITE PROTECT	e0				.003 Amp	18.1 mm	100 ns
M48Z35V-100MH6	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel			32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	BATTERY BACKUP; WRITE PROTECT	e0				.003 Amp	18.1 mm	100 ns
M48Z35AV-70MH1TR	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE				70 Cel			32KX8	32K		0 Cel		DUAL		R-PDSO-G28		3.6 V			Not Qualified	262144 bit	3 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY							70 ns
M48Z35Y-70MH6	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel			32KX8	32K		-40 Cel		DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.5 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e0				.003 Amp	18.1 mm	70 ns
M48Z09-100PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm	15.24 mm	Not Qualified	65536 bit	4.75 V	BATTERY BACKUP; WRITE PROTECT; 11 YEARS OF DATA RETENTION	e0			YES	.003 Amp	39.625 mm	100 ns
M48Z35V-100MH1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	BATTERY BACKUP; WRITE PROTECT	e0				.003 Amp	18.1 mm	100 ns
M48Z35AV-100MH1TR	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e0				.003 Amp	18.1 mm	100 ns
M48Z35-70MH1TR	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.75 V		e0			YES		18.1 mm	70 ns
M48Z58Y-70MH6F	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel			8KX8	8K		-40 Cel		DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V			10	260		.003 Amp	18.1 mm	70 ns
M48Z35AY-70MH6E	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel			32KX8	32K		-40 Cel		DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.5 V			10	260		.003 Amp	18.1 mm	70 ns
M48Z58-70MH1F	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel			8KX8	8K		0 Cel		DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.75 V						.003 Amp	18.1 mm	70 ns
M48Z35AY-70MH1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.5 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e0				.003 Amp	18.1 mm	70 ns
M48Z58Y-70MH1F	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel			8KX8	8K		0 Cel	TIN	DUAL		R-PDSO-G28	3	5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V		e3				.003 Amp	18.1 mm	70 ns
M48Z32-100PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		3-STATE	32KX8	32K		0 Cel		DUAL	1	R-XDMA-T28		5.5 V			Not Qualified	262144 bit	4.75 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 10 YEARS OF DATA RETENTION				YES			100 ns
M48Z35AY-70MH1E	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel			32KX8	32K		0 Cel		DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.5 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY		10	260		.003 Amp	18.1 mm	70 ns
M48Z58Y-70MH1E	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel			8KX8	8K		0 Cel	TIN	DUAL		R-PDSO-G28	3	5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V		e3				.003 Amp	18.1 mm	70 ns
M48Z58PC	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel		DUAL	1	R-PDIP-T28			9.65 mm	15.24 mm	Not Qualified	65536 bit		BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; SELF CONTAINED BATTERY				YES		39.625 mm
M48Z58-70PC1-TR	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	MATTE TIN	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm	15.24 mm	Not Qualified	65536 bit	4.75 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e3			YES		39.625 mm	70 ns
M48Z08-100MH1	STMicroelectronics	NON-VOLATILE SRAM		28		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	COMMON	5		8					70 Cel			8KX8	8K		0 Cel		DUAL		R-PDSO-G28		5.5 V				65536 bit	4.5 V					YES
M48Z35AY-70MH6F	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel			32KX8	32K		-40 Cel		DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.5 V			10	260		.003 Amp	18.1 mm	70 ns
M48Z35AV-10MH6F	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel			32KX8	32K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V		e4				.003 Amp	18.1 mm	100 ns
M48Z35AY-70MH6TR	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel			32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.5 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e0				.003 Amp	18.1 mm	70 ns
M48Z35AV-100MH6TR	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel			32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		3.6 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	3 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e0				.003 Amp	18.1 mm	100 ns
M48Z58Y-70MH6	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel			8KX8	8K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e0				.003 Amp	18.1 mm	70 ns
M48Z35AV-70MH6	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE				85 Cel			32KX8	32K		-40 Cel		DUAL		R-PDSO-G28		3.6 V			Not Qualified	262144 bit	3 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY							70 ns
M48Z58Y-70PC6	STMicroelectronics	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel			8KX8	8K		-40 Cel	Tin/Lead (Sn63Pb37)	DUAL		R-PDIP-T28		5.5 V	9.65 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e0				.003 Amp	39.625 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.