28 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
DS1730Y-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL	R-PDMA-T28		5.5 V			Not Qualified	262144 bit	2.7 V	BATTERY BACK-UP	e0			100 ns
DS2064S	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K	2 V	-40 Cel	TIN LEAD	DUAL	R-PDSO-G28		5.5 V	2.65 mm	7.5 mm	Not Qualified	65536 bit	4.5 V	DATA RETENTION VOLTAGE=5.5V TO 2.0V/TTL COMPATIBLE INPUT AND OUTPUT	e0	.000001 Amp	17.9 mm	150 ns
DS1630Y-120-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	9.52 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	10 YEAR DATA RETENTION	e0	.005 Amp	37.85 mm	120 ns
DS1630AB-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.25 V	9.52 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp	37.85 mm	100 ns
DS1630Y-85-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	9.52 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	10 YEAR DATA RETENTION	e0	.005 Amp	37.85 mm	85 ns
DS1630AB-120-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.25 V	9.52 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp	37.85 mm	120 ns
DS1630Y-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	9.52 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	10 YEAR DATA RETENTION	e0	.005 Amp	37.85 mm	100 ns
DS1730Y-150IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words		3	3/3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T28		3.6 V	9.52 mm	15.24 mm	Not Qualified	262144 bit	2.7 V	DATA RETENTION = 10 YRS	e0	.004 Amp	37.85 mm	150 ns
DS1730Y-200	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			40 mA	32768 words			3/3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28					Not Qualified	262144 bit			e0	.004 Amp		200 ns
DS1730Y-150	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			40 mA	32768 words			3/3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28					Not Qualified	262144 bit			e0	.004 Amp		150 ns
DS2064	Maxim Integrated	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28					Not Qualified	65536 bit			e0	.000001 Amp		200 ns
DS1630AB-85-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.25 V	9.52 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp	37.85 mm	85 ns
DS1230AB-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	120 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL	R-XDMA-P28	1	5.25 V			Not Qualified	262144 bit	4.75 V	10 YEARS DATA RETENTION PERIOD	e0	.005 Amp		70 ns
DS1235Y-120	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28					Not Qualified	262144 bit			e0	.005 Amp		120 ns
DS1225E-85	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			75 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28					Not Qualified	65536 bit			e0	.005 Amp		85 ns
DS1225AB-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	TIN LEAD	DUAL	R-PDMA-P28	1	5.25 V	10.54 mm	15.24 mm	Not Qualified	65536 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp	38.865 mm	70 ns
DS1225AD-150IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	TIN LEAD	DUAL	R-PDMA-P28		5.5 V			Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e0	.005 Amp		150 ns
DS1230W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words		3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		256KX8	256K		0 Cel	TIN LEAD	DUAL	R-PDIP-T28	1	3.6 V	10.668 mm	15.24 mm	Not Qualified	2097152 bit	3 V	10 YEAR DATA RETENTION	e0	.00015 Amp	38.225 mm	100 ns
DS1225D-70	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			75 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28					Not Qualified	65536 bit			e0	.005 Amp		70 ns
DS1235YW/BURNIN	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28						262144 bit			e0	.005 Amp		200 ns
DS1230AB-120IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL	R-XDMA-P28		5.25 V			Not Qualified	262144 bit	4.75 V		e0	.005 Amp		120 ns
DS1225AB-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	TIN LEAD	DUAL	R-PDMA-P28	1	5.25 V	10.54 mm	15.24 mm	Not Qualified	65536 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp	38.865 mm	150 ns
DS1225AD-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	TIN LEAD	DUAL	R-PDMA-P28	1	5.5 V	10.54 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e0	.005 Amp	38.865 mm	150 ns
DS1225D-120	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			75 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28					Not Qualified	65536 bit			e0	.005 Amp		120 ns
DS1230Y-85	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL	R-XDMA-P28	1	5.5 V			Not Qualified	262144 bit	4.5 V	10 YEARS DATA RETENTION PERIOD	e0	.005 Amp		85 ns
DS1235Y-150	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28					Not Qualified	262144 bit			e0	.005 Amp		150 ns
DS1230AB-200IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL	R-XDMA-P28		5.25 V			Not Qualified	262144 bit	4.75 V		e0	.005 Amp		200 ns
DS1225AD-170	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	TIN LEAD	DUAL	R-PDIP-T28	1	5.5 V	9.398 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	DATA RETENTION > 10 YEARS	e0	.005 Amp	38.862 mm	170 ns
DS1225E-70IND	Maxim Integrated	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28					Not Qualified	65536 bit			e0	.005 Amp		70 ns
DS1230AB-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL	R-XDMA-P28	1	5.25 V			Not Qualified	262144 bit	4.75 V	10 YEARS DATA RETENTION PERIOD	e0	.005 Amp		150 ns
DS1225AB-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	TIN LEAD	DUAL	R-PDMA-P28		5.25 V			Not Qualified	65536 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp		70 ns
DS1230AB-150-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL	R-XDMA-T28		5.25 V			Not Qualified	262144 bit	4.75 V	10 YEARS DATA RETENTION PERIOD	e0	.005 Amp		150 ns
DS1225D-85	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			75 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28					Not Qualified	65536 bit			e0	.005 Amp		85 ns
DS1235AB-150	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28					Not Qualified	262144 bit			e0	.005 Amp		150 ns
DS1230Y-120IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL	R-XDMA-P28		5.5 V			Not Qualified	262144 bit	4.5 V		e0	.005 Amp		120 ns
DS1225E-70	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			75 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28					Not Qualified	65536 bit			e0	.005 Amp		70 ns
DS1235AB-200	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28					Not Qualified	262144 bit			e0	.005 Amp		200 ns
DS1225AB-200IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	TIN LEAD	DUAL	R-PDMA-P28		5.25 V			Not Qualified	65536 bit	4.75 V	10 YEAR DATA RETENTION	e0	.005 Amp		200 ns
DS1230AB-70IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL	R-XDMA-P28		5.25 V			Not Qualified	262144 bit	4.75 V		e0	.005 Amp		70 ns
DS1225AD-85-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		8KX8	8K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	9.398 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION PERIOD	e0	.005 Amp	38.862 mm	85 ns
DS1230W-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	MICROELECTRONIC ASSEMBLY				85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL	R-XDMA-N28					Not Qualified	262144 bit		10 YEARS OF DATA RETENTION PERIOD	e0			150 ns
DS1230W-100IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words		3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		256KX8	256K		-40 Cel	TIN LEAD	DUAL	R-PDIP-T28		3.6 V	10.668 mm	15.24 mm	Not Qualified	2097152 bit	3 V	10 YEAR DATA RETENTION	e0	.00015 Amp	38.225 mm	100 ns
DS1235AB-120	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28					Not Qualified	262144 bit			e0	.005 Amp		120 ns
DS1230AB-100-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL	R-XDMA-T28		5.25 V			Not Qualified	262144 bit	4.75 V	10 YEARS DATA RETENTION PERIOD	e0	.005 Amp		100 ns
DS1230AB-85	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL	R-XDMA-P28	1	5.25 V			Not Qualified	262144 bit	4.75 V	10 YEARS DATA RETENTION PERIOD	e0	.005 Amp		85 ns
DS1230AB-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL	R-XDMA-P28	1	5.25 V			Not Qualified	262144 bit	4.75 V	10 YEARS DATA RETENTION PERIOD	e0	.005 Amp		100 ns
DS1230Y-85-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL	R-XDMA-T28		5.5 V			Not Qualified	262144 bit	4.5 V	10 YEARS DATA RETENTION PERIOD	e0	.005 Amp		85 ns
DS1230AB-85-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL	R-XDMA-T28		5.25 V			Not Qualified	262144 bit	4.75 V	10 YEARS DATA RETENTION PERIOD	e0	.005 Amp		85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.