28 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
DS1225AB-85-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel			8KX8	8K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.25 V	9.398 mm	15.24 mm	Not Qualified	65536 bit	4.75 V	10 YEAR DATA RETENTION PERIOD	e0				.005 Amp	38.862 mm	85 ns
DS1230AB-200	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-P28	1	5.25 V			Not Qualified	262144 bit	4.75 V	10 YEARS DATA RETENTION PERIOD	e0				.005 Amp		200 ns
DS1225E-120	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			75 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel			8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.005 Amp		120 ns
DS1230W-150	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words		3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel			256KX8	256K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28	1	3.6 V	10.668 mm	15.24 mm	Not Qualified	2097152 bit	3 V	10 YEAR DATA RETENTION	e0	20	240		.00015 Amp	38.225 mm	150 ns
DS1225AD-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel			8KX8	8K		0 Cel	TIN LEAD	DUAL		R-PDMA-P28	1	5.5 V	10.54 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION	e0				.005 Amp	38.865 mm	70 ns
DS1225E-100	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			75 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel			8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.005 Amp		100 ns
DS1225Y-170-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel			8KX8	8K		-40 Cel	TIN LEAD	DUAL		R-XDIP-P28		5.5 V	10.54 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	10 YEAR DATA RETENTION PERIOD	e0				.005 Amp	38.865 mm	170 ns
DS1225AB-200	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel			8KX8	8K		0 Cel	TIN LEAD	DUAL		R-PDMA-P28	1	5.25 V	10.54 mm	15.24 mm	Not Qualified	65536 bit	4.75 V	10 YEAR DATA RETENTION	e0				.005 Amp	38.865 mm	200 ns
DS1225AB-170	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel			8KX8	8K		0 Cel	TIN LEAD	DUAL		R-XDMA-T28	1	5.25 V			Not Qualified	65536 bit	4.75 V	BATTERY BACK-UP	e0				.005 Amp		170 ns
DS1225AB-85	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel			8KX8	8K		0 Cel	TIN LEAD	DUAL		R-PDMA-P28	1	5.25 V	10.54 mm	15.24 mm	Not Qualified	65536 bit	4.75 V	10 YEAR DATA RETENTION	e0				.005 Amp	38.865 mm	85 ns
DS1230W-150-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel			32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-XDMA-T28		3.6 V			Not Qualified	262144 bit	3 V		e0				.00015 Amp		150 ns
DS1225AB-150IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel			8KX8	8K		-40 Cel	TIN LEAD	DUAL		R-PDMA-P28		5.25 V			Not Qualified	65536 bit	4.75 V	10 YEAR DATA RETENTION	e0				.005 Amp		150 ns
DS1230Y-150-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	85 Cel			32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-XDMA-T28		5.5 V			Not Qualified	262144 bit	4.5 V	10 YEARS DATA RETENTION PERIOD	e0				.005 Amp		150 ns
DS1235Y-200	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel			32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	262144 bit			e0				.005 Amp		200 ns
DS1225E-120IND	Maxim Integrated	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel			8KX8	8K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.005 Amp		120 ns
DS1230AB-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel			32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-XDMA-N28		5.25 V			Not Qualified	262144 bit	4.75 V	BATTERY BACK-UP	e0						200 ns
DS1230Y-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		8	MICROELECTRONIC ASSEMBLY				85 Cel			32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-XDMA-N28		5.5 V			Not Qualified	262144 bit	4.5 V	BATTERY BACK-UP	e0						200 ns
DS1225D-70IND	Maxim Integrated	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel			8KX8	8K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.005 Amp		70 ns
DS1225Y-IND	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	85 Cel			8KX8	8K		-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	9.398 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP	e0					38.862 mm	200 ns
DS1225D-100	Maxim Integrated	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			75 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel			8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.005 Amp		100 ns
DS1225D-120IND	Maxim Integrated	NON-VOLATILE SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			85 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel			8KX8	8K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.005 Amp		120 ns
DS1230AB-120	Maxim Integrated	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	PIN/PEG	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL		R-XDMA-P28	1	5.25 V			Not Qualified	262144 bit	4.75 V	10 YEARS DATA RETENTION PERIOD	e0				.005 Amp		120 ns
TC55257BFL-85L	Toshiba	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	2.7 mm	8.8 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00002 Amp	18.5 mm	85 ns
TC55257DFL-70V	Toshiba	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	3.3	3/5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28		5.5 V	2.7 mm	8.8 mm	Not Qualified	262144 bit	2.7 V	USER SELECTABLE 5V VCC	e0			YES	.00001 Amp	18.5 mm	120 ns
TC55257BFL-10EL	Toshiba	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE				70 Cel			32KX8	32K		0 Cel		DUAL		R-PDSO-G28		5.5 V			Not Qualified	262144 bit	4.5 V								100 ns
TC55B328P-10	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	4.45 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0					34.9 mm	10 ns
TC55257BTRL-85(LT)	Toshiba	STANDARD SRAM	COMMERCIAL	28	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	YES	3-STATE	32KX8	32K	2 V	-20 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e0				.00005 Amp	11.8 mm	85 ns
TC55257CPL-70	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	5.3 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0				.00005 Amp	37 mm	70 ns
TC55328J-17	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.25 V	3.7 mm	7.7 mm	Not Qualified	262144 bit	4.75 V		e0			YES	.001 Amp	18.42 mm	17 ns
TC5589J-35	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		9	SMALL OUTLINE			1.27 mm	70 Cel			8KX9	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28		5.5 V	3.7 mm	7.7 mm	Not Qualified	73728 bit	4.5 V		e0					18.42 mm	35 ns
TC55257CFL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	2.7 mm	8.8 mm	Not Qualified	262144 bit	4.5 V		e0					18.5 mm	70 ns
TC55B328J-12	Toshiba	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES			J BEND	PARALLEL	ASYNCHRONOUS	170 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28					Not Qualified	262144 bit			e0						12 ns
TC51832P-85	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.3 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		37 mm	85 ns
TC55257CPI-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	5.3 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0				.000015 Amp	37 mm	85 ns
TC55257DFTRI-70L	Toshiba	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE				85 Cel			32KX8	32K		-40 Cel		DUAL		R-PDSO-G28		5.5 V			Not Qualified	262144 bit	4.5 V								70 ns
TC55257BPL-70	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	5.3 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	LOW POWER STANDBY MODE; POWER DOWN FEATURE	e0					37 mm	70 ns
TC5588J-25	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	115 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	8KX8	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J28		5.5 V	3.7 mm	7.7 mm	Not Qualified	65536 bit	4.5 V		e0				.001 Amp	18.42 mm	25 ns
TC55465AP-35	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	4.45 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0				.001 Amp	34.9 mm	35 ns
TC55257DFL-85V	Toshiba	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	3.3	3/5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel		DUAL	1	R-PDSO-G28		5.5 V	2.7 mm	8.8 mm	Not Qualified	262144 bit	2.7 V	USER SELECTABLE 5V VCC				YES	.00001 Amp	18.5 mm	150 ns
TC55257DPI-85L	Toshiba	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel		DUAL	1	R-PDIP-T28		5.5 V	5.3 mm	15.24 mm	Not Qualified	262144 bit	4.5 V					YES	.000015 Amp	37 mm	80 ns
TMM2088P-55	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	8192 words	COMMON			8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0						55 ns
TC55258PL-10	Toshiba	STANDARD SRAM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	85 Cel		3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	5.2 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	LOW POWER STANDBY MODE	e0				.00001 Amp		100 ns
TC5565P-1	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.001 Amp		150 ns
TC55257BPL-85L(LV)	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	3/5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	5.3 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0				.00002 Amp	37 mm	85 ns
TC55257DPL-85L	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel		DUAL	1	R-PDIP-T28		5.5 V	5.3 mm	15.24 mm	Not Qualified	262144 bit	4.5 V					YES	.00001 Amp	37 mm	85 ns
TC55257BFTL-10L(LV)	Toshiba	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e0				.00002 Amp	11.8 mm	100 ns
TMM2089C-45	Toshiba	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	COMMON			9	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	8KX9	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	73728 bit			e0						45 ns
TC55B328P-12	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	4.45 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0					34.9 mm	12 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.