28 SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

CY7B161A-15PC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

115 mA

16384 words

SEPARATE

5

5

4

IN-LINE

DIP28,.3

SRAMs

2.54 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T28

Not Qualified

65536 bit

e0

15 ns

TTS92256N-25M-1

Infineon Technologies

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

150 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

4.5 V

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.015 Amp

25 ns

TTS92256NC-15C-4

Infineon Technologies

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

180 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

4.5 V

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.02 Amp

15 ns

CY7B161A-15VC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

J BEND

PARALLEL

ASYNCHRONOUS

115 mA

16384 words

SEPARATE

5

5

4

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

65536 bit

e0

15 ns

SMD5962-9232406MXA

Infineon Technologies

NON-VOLATILE SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

75 mA

8192 words

5

5

8

IN-LINE

DIP28,.3

SRAMs

2.54 mm

125 Cel

8KX8

8K

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

65536 bit

.0015 Amp

35 ns

CY7B161A-20DC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

SEPARATE

5

5

4

IN-LINE

DIP28,.3

SRAMs

2.54 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

65536 bit

e0

20 ns

CY7B161A-25LMB

Infineon Technologies

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC

YES

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

SEPARATE

5

5

4

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

125 Cel

3-STATE

16KX4

16K

-55 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N28

Not Qualified

65536 bit

e0

25 ns

TTS92256N-20M-1

Infineon Technologies

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

180 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

4.5 V

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.02 Amp

20 ns

CY7B161A-20PC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

SEPARATE

5

5

4

IN-LINE

DIP28,.3

SRAMs

2.54 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T28

Not Qualified

65536 bit

e0

20 ns

CY7B162A-20PC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

SEPARATE

5

5

4

IN-LINE

DIP28,.3

SRAMs

2.54 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T28

Not Qualified

65536 bit

e0

20 ns

CY7B162A-45PC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

SEPARATE

5

5

4

IN-LINE

DIP28,.3

SRAMs

2.54 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T28

Not Qualified

65536 bit

e0

45 ns

FMX1408-100PC

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

16 mA

2048 words

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

2KX8

2K

0 Cel

DUAL

R-PDIP-T28

Not Qualified

16384 bit

.00004 Amp

100 ns

FM28V010-SG

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

12 mA

16384 words

2.5/3.3

8

SMALL OUTLINE

SOP28,.4

SRAMs

1.27 mm

85 Cel

16KX8

16K

-40 Cel

DUAL

R-PDSO-G28

Not Qualified

131072 bit

.00015 Amp

105 ns

CY7B162A-15VC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

J BEND

PARALLEL

ASYNCHRONOUS

115 mA

16384 words

SEPARATE

5

5

4

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

65536 bit

e0

15 ns

TTS92256N-45C-1

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

150 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

4.5 V

0 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.02 Amp

45 ns

TTS92256G-45M-1

Infineon Technologies

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

150 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

125 Cel

3-STATE

32KX8

32K

4.5 V

-55 Cel

DUAL

R-XDIP-T28

Not Qualified

262144 bit

.015 Amp

45 ns

FM1608S180SI

Infineon Technologies

NON-VOLATILE SRAM

INDUSTRIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

25 mA

8192 words

5

5

8

SMALL OUTLINE

SOP28,.4

SRAMs

1.27 mm

85 Cel

8KX8

8K

-40 Cel

DUAL

R-PDSO-G28

Not Qualified

65536 bit

.00005 Amp

180 ns

CY7B161A-20LMB

Infineon Technologies

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC

YES

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

SEPARATE

5

5

4

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

125 Cel

3-STATE

16KX4

16K

-55 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N28

Not Qualified

65536 bit

e0

20 ns

TTS92256N-35C-2

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

150 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

4.5 V

0 Cel

DUAL

R-PDIP-T28

Not Qualified

262144 bit

.02 Amp

35 ns

CY7B161A-35DC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

SEPARATE

5

5

4

IN-LINE

DIP28,.3

SRAMs

2.54 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

65536 bit

e0

35 ns

CY7B161A-20LC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

QCCN

RECTANGULAR

CERAMIC

YES

NO LEAD

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

SEPARATE

5

5

4

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N28

Not Qualified

65536 bit

e0

20 ns

CY7B162A-25LC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

QCCN

RECTANGULAR

CERAMIC

YES

NO LEAD

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

SEPARATE

5

5

4

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N28

Not Qualified

65536 bit

e0

25 ns

SMD5962-9232404MYX

Infineon Technologies

NON-VOLATILE SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

38535Q/M;38534H;883B

NO LEAD

55 mA

8192 words

5

5

8

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

125 Cel

8KX8

8K

-55 Cel

QUAD

R-XQCC-N28

Not Qualified

65536 bit

.0015 Amp

55 ns

CY7B162A-20LC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

QCCN

RECTANGULAR

CERAMIC

YES

NO LEAD

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

SEPARATE

5

5

4

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N28

Not Qualified

65536 bit

e0

20 ns

FM1808S150S

Infineon Technologies

NON-VOLATILE SRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

30 mA

32768 words

3/3.3

8

SMALL OUTLINE

SOP28,.45

SRAMs

1.27 mm

70 Cel

32KX8

32K

0 Cel

DUAL

R-PDSO-G28

Not Qualified

262144 bit

.000025 Amp

150 ns

CY7B162A-45LC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

QCCN

RECTANGULAR

CERAMIC

YES

NO LEAD

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

SEPARATE

5

5

4

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N28

Not Qualified

65536 bit

e0

45 ns

CY7B162A-35DC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

SEPARATE

5

5

4

IN-LINE

DIP28,.3

SRAMs

2.54 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

65536 bit

e0

35 ns

TTS92256N-55C-2

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

150 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

4.5 V

0 Cel

DUAL

R-PDIP-T28

Not Qualified

262144 bit

.02 Amp

55 ns

CY7B162A-20VC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

J BEND

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

SEPARATE

5

5

4

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

65536 bit

e0

20 ns

CY7B161A-45DMB

Infineon Technologies

STANDARD SRAM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

SEPARATE

5

5

4

IN-LINE

DIP28,.3

SRAMs

2.54 mm

125 Cel

3-STATE

16KX4

16K

-55 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

65536 bit

e0

45 ns

CY7B162A-35LMB

Infineon Technologies

STANDARD SRAM

MILITARY

28

QCCN

RECTANGULAR

CERAMIC

YES

38535Q/M;38534H;883B

NO LEAD

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

SEPARATE

5

5

4

CHIP CARRIER

LCC28,.35X.55

SRAMs

1.27 mm

125 Cel

3-STATE

16KX4

16K

-55 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N28

Not Qualified

65536 bit

e0

35 ns

CY7B161A-20VC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

J BEND

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

SEPARATE

5

5

4

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

65536 bit

e0

20 ns

CY7B162A-35VC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

J BEND

PARALLEL

ASYNCHRONOUS

100 mA

16384 words

SEPARATE

5

5

4

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

70 Cel

3-STATE

16KX4

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J28

Not Qualified

65536 bit

e0

35 ns

CY7C1399BN-12VXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

55 mA

32768 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

85 Cel

3-STATE

32KX8

32K

3 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-J28

3

3.6 V

3.556 mm

7.5057 mm

Not Qualified

262144 bit

3 V

e4

30

260

.0005 Amp

17.907 mm

12 ns

CY7C107D-10VXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

80 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ28,.44

SRAMs

1.27 mm

85 Cel

3-STATE

1MX1

1M

2 V

-40 Cel

PURE TIN

DUAL

R-PDSO-J28

3

5.5 V

3.7592 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

30

260

.003 Amp

18.415 mm

10 ns

CY7C199CN-12VXA

Infineon Technologies

STANDARD SRAM

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

85 mA

32768 words

COMMON

5

8

SMALL OUTLINE

SOJ28,.34

1.27 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

DUAL

1

R-PDSO-J28

5.5 V

3.556 mm

7.5057 mm

262144 bit

4.5 V

YES

.01 Amp

17.907 mm

12 ns

CY7C106B-35VCT

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

125 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ28,.44

SRAMs

1.27 mm

70 Cel

3-STATE

256KX4

256K

2 V

0 Cel

DUAL

R-PDSO-J28

Not Qualified

1048576 bit

.00025 Amp

35 ns

CY14E064L-45XCT

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65 mA

8192 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.45

SRAMs

1.27 mm

70 Cel

3-STATE

8KX8

8K

4.5 V

0 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G28

3

Not Qualified

65536 bit

e4

20

260

.0025 Amp

45 ns

CY7C1399B-12ZIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

28

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

55 mA

32768 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

3 V

-40 Cel

DUAL

R-PDSO-G28

Not Qualified

262144 bit

.0005 Amp

12 ns

CY7C107D-10VXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

80 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ28,.44

SRAMs

1.27 mm

85 Cel

3-STATE

1MX1

1M

2 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-J28

3

5.5 V

3.7592 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e4

30

260

.003 Amp

18.415 mm

10 ns

CY7C199CN-20ZXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

75 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G28

3

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e4

30

260

.0005 Amp

11.8 mm

20 ns

CY14E064L-25XC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

85 mA

8192 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.45

SRAMs

1.27 mm

70 Cel

3-STATE

8KX8

8K

4.5 V

0 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G28

3

Not Qualified

65536 bit

e4

20

260

.0025 Amp

25 ns

CY14E064L-25XCT

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

85 mA

8192 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.45

SRAMs

1.27 mm

70 Cel

3-STATE

8KX8

8K

4.5 V

0 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G28

3

Not Qualified

65536 bit

e4

20

260

.0025 Amp

25 ns

CY7C185-35VXC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

8192 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

8KX8

8K

0 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-J28

3

5.5 V

3.556 mm

7.5 mm

Not Qualified

65536 bit

4.5 V

AUTOMATIC POWER-DOWN

e4

17.907 mm

35 ns

CY7C199CN-20ZXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

75 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G28

3

5.5 V

1.02 mm

8 mm

Not Qualified

262144 bit

4.5 V

e4

20

260

.0005 Amp

11.8 mm

20 ns

CY14E064L-45XC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65 mA

8192 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.45

SRAMs

1.27 mm

70 Cel

3-STATE

8KX8

8K

4.5 V

0 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G28

3

Not Qualified

65536 bit

e4

20

260

.0025 Amp

45 ns

STK12C68-SF45TR

Infineon Technologies

NON-VOLATILE SRAM

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65 mA

8192 words

COMMON

5

8

SMALL OUTLINE

SOP28,.5

1.27 mm

70 Cel

3-STATE

8KX8

8K

4.5 V

0 Cel

DUAL

1

R-PDSO-G28

5.5 V

2.794 mm

8.6865 mm

65536 bit

4.5 V

YES

.0015 Amp

18.3895 mm

45 ns

STK12C68-SF25TR

Infineon Technologies

NON-VOLATILE SRAM

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

85 mA

8192 words

COMMON

5

8

SMALL OUTLINE

SOP28,.5

1.27 mm

70 Cel

3-STATE

8KX8

8K

4.5 V

0 Cel

DUAL

1

R-PDSO-G28

5.5 V

2.794 mm

8.6865 mm

65536 bit

4.5 V

YES

.0015 Amp

18.3895 mm

25 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.