28 SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
M48Z35Y-70MH1F	STMicroelectronics	SRAM STD	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		32KX8	32K		0 Cel	Tin (Sn)	DUAL		R-PDSO-G28	3	5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.5 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e3	30	260		.003 Amp	18.1 mm	70 ns
M48Z18-100MH1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e0			YES	.003 Amp	18.1 mm	100 ns
M48Z18-100MH1TR	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e0			YES	.003 Amp	18.1 mm	100 ns
M48Z30Y-85PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-XDMA-T28		5.5 V			Not Qualified	262144 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 10 YEARS OF DATA RETENTION AT 25 DEG. CENT.	e0			YES	.004 Amp		85 ns
M48Z08Y-10PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	9.65 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e3				.003 Amp	39.625 mm	100 ns
M48Z18-100MH6	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel	3-STATE	8KX8	8K		-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e0			YES	.003 Amp	18.1 mm	100 ns
M48Z08-100PC1TR	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	9.65 mm	15.24 mm	Not Qualified	65536 bit	4.75 V		e3				.003 Amp	39.625 mm	100 ns
M48Z59MH	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	8KX8	8K		0 Cel		DUAL	1	R-PDSO-G28			3.05 mm	8.56 mm	Not Qualified	65536 bit		BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION				YES		18.1 mm
M48Z59W-70PC1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE			50 mA	8192 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.003 Amp		70 ns
M48Z35-70PC1TR	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	9.65 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e0			YES		39.625 mm	70 ns
M48Z58Y-70MH6E	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		8KX8	8K		-40 Cel		DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V			10	260		.003 Amp	18.1 mm	70 ns
M48Z08Y-10MH1TR	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	8192 words		5	5	8	SMALL OUTLINE	DIP28,.6	SRAMs	1.27 mm	70 Cel		8KX8	8K		0 Cel	MATTE TIN	DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V		e3				.003 Amp	18.1 mm	100 ns
M48Z35AV-70MH6TR	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE				85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-G28		3.6 V			Not Qualified	262144 bit	3 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY							70 ns
M48Z32Y-100PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel	3-STATE	32KX8	32K		0 Cel		DUAL	1	R-XDMA-T28		5.5 V			Not Qualified	262144 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 10 YEARS OF DATA RETENTION				YES			100 ns
M48Z35AY-100MH6TR	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE				85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-G28		5.5 V			Not Qualified	262144 bit	4.5 V								100 ns
M48Z35V-100PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28		3.6 V	9.65 mm	15.24 mm	Not Qualified	262144 bit	3 V	BATTERY BACKUP; WRITE PROTECT	e0				.003 Amp	39.625 mm	100 ns
M48Z35AY-70MH6	STMicroelectronics	NON-VOLATILE SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.5 V	SNAPHAT BATTERY TO BE ORDERED SEPARATELY	e0				.003 Amp	18.1 mm	70 ns
M48Z30-100PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-XDMA-T28		5.5 V			Not Qualified	262144 bit	4.75 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 10 YEARS OF DATA RETENTION AT 25 DEG. CENT.	e0			YES	.004 Amp		100 ns
M48Z35-70MH1E	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	262144 bit	4.75 V						.003 Amp	18.1 mm	70 ns
M48Z35AV-100PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	MATTE TIN	DUAL		R-PDIP-T28		3.6 V	9.65 mm	15.24 mm	Not Qualified	262144 bit	3 V		e3				.003 Amp	39.625 mm	100 ns
M48Z59PC	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel		DUAL	1	R-PDIP-T28			9.65 mm	15.24 mm	Not Qualified	65536 bit		BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; SELF CONTAINED BATTERY				YES		39.625 mm
M48Z35AY-100MH1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE				70 Cel		32KX8	32K		0 Cel		DUAL		R-PDSO-G28		5.5 V			Not Qualified	262144 bit	4.5 V								100 ns
M48Z35AY-70PC1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		32KX8	32K		0 Cel	MATTE TIN	DUAL		R-PDIP-T28		5.5 V	9.65 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3				.003 Amp	39.625 mm	70 ns
M48Z30Y-100PM1	STMicroelectronics	NON-VOLATILE SRAM MODULE	COMMERCIAL	28	DIP	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-XDMA-T28		5.5 V			Not Qualified	262144 bit	4.5 V	BATTERY BACKUP; POWER SUPPLY WRITE PROTECTION; 10 YEARS OF DATA RETENTION AT 25 DEG. CENT.	e0			YES	.004 Amp		100 ns
M48Z59Y-70MH1	STMicroelectronics	NON-VOLATILE SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	8192 words		5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	3.05 mm	8.56 mm	Not Qualified	65536 bit	4.5 V	BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION	e0			YES	.003 Amp	18.1 mm	70 ns
82S09/BXA	NXP Semiconductors	STANDARD SRAM	MILITARY	28		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		64 words		5		9	IN-LINE				125 Cel		64X9	64		-55 Cel		DUAL		R-CDIP-T28		5.25 V			Not Qualified	576 bit	4.75 V								80 ns
5962-86052013A	NXP Semiconductors	STANDARD SRAM	MILITARY	28	QCCN	SQUARE	UNSPECIFIED	YES	1	BIPOLAR	MIL-STD-883	NO LEAD	SERIAL	SYNCHRONOUS		256 words		5		8	CHIP CARRIER				125 Cel		256X8	256		-55 Cel		QUAD		S-XQCC-N28		5.25 V			Not Qualified	2048 bit	4.75 V
5962-86052013X	NXP Semiconductors	STANDARD SRAM	MILITARY	28	QCCN	SQUARE	UNSPECIFIED	YES	1	BIPOLAR	MIL-STD-883	NO LEAD	PARALLEL	SYNCHRONOUS		256 words		5		8	CHIP CARRIER				125 Cel		256X8	256		-55 Cel		QUAD		S-XQCC-N28		5.25 V			Not Qualified	2048 bit	4.75 V
FCB61C65-70P	NXP Semiconductors	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.003 Amp		70 ns
CY7B162A-25PC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0						25 ns
TTS92256N-45C-2	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-PDIP-T28					Not Qualified	262144 bit							.02 Amp		45 ns
TTS92256NC-12C-1	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.02 Amp		12 ns
CY7B162A-25LMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES			38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	65536 bit			e0						25 ns
TTS92256NC-15C-6	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-PDIP-T28					Not Qualified	262144 bit							.02 Amp		15 ns
FMX1408-100DC	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			16 mA	2048 words		5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel		2KX8	2K		0 Cel		DUAL		R-XDIP-T28					Not Qualified	16384 bit							.00004 Amp		100 ns
CY7B162A-45DMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO			38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	65536 bit			e0						45 ns
SMD5962-9232405MYA	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD			65 mA	8192 words		5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel		8KX8	8K		-55 Cel		QUAD		R-XQCC-N28					Not Qualified	65536 bit							.0015 Amp		45 ns
CY7B161A-45DC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	65536 bit			e0						45 ns
TTS92256N-20C-1	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	4.5 V	0 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.02 Amp		20 ns
TTS92256N-35M-1	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.015 Amp		35 ns
SMD5962-9232406MYX	Infineon Technologies	NON-VOLATILE SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD			75 mA	8192 words		5	5	8	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel		8KX8	8K		-55 Cel		QUAD		R-XQCC-N28					Not Qualified	65536 bit							.0015 Amp		35 ns
CY7B161A-35LMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES			38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	65536 bit			e0						35 ns
TTS92256N-55M-1	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	160 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel		DUAL		R-XDIP-T28					Not Qualified	262144 bit							.02 Amp		55 ns
CY7B162A-20KMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR	CERAMIC	YES			38535Q/M;38534H;883B	FLAT	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	FLATPACK	FL28,.4	SRAMs	1.27 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDFP-F28					Not Qualified	65536 bit			e0						20 ns
CY7B161A-35LC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	QCCN	RECTANGULAR	CERAMIC	YES				NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	CHIP CARRIER	LCC28,.35X.55	SRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-XQCC-N28					Not Qualified	65536 bit			e0						35 ns
CY7B162A-35DMB	Infineon Technologies	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO			38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	125 Cel	3-STATE	16KX4	16K		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	65536 bit			e0						35 ns
CY7B161A-25DC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T28					Not Qualified	65536 bit			e0						25 ns
CY7B161A-45PC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO				THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	SEPARATE	5	5	4	IN-LINE	DIP28,.3	SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0						45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.