484 SRAM 23

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
CYD36S36V18-200BGXC	Cypress Semiconductor	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1500 mA	1048576 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	200 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260	.59 Amp	27 mm	3.3 ns
CYD09S72V18-200BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	790 mA	131072 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	128KX72	128K	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.16 mm	200 MHz	23 mm	Not Qualified	9437184 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260	.2 Amp	23 mm	9 ns
CYD18S72V18-167BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		1.5		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	18874368 bit	1.42 V		e1				23 mm	4 ns
CYD18S72V18-200BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		1.5		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	18874368 bit	1.42 V		e1				23 mm	3.3 ns
CYD36S18V18-133BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1160 mA	2097152 words	COMMON	1.5	1.5/1.8	18	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260	.59 Amp	27 mm	13 ns
CYD18S72V-133BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	580 mA	262144 words	COMMON	3.3	3.3	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	3.465 V	1.9 mm	133 MHz	23 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE OR FLOW-THROUGH ARCHITECTURE	e1	20	260	.075 Amp	23 mm	5 ns
CYD36S36V18-167BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.5		36	GRID ARRAY			1 mm	85 Cel		1MX36	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	37748736 bit	1.42 V		e1				23 mm	4 ns
CYD18S72V-100BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	3.3	3.3	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	85 Cel	3-STATE	256KX72	256K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	3.465 V	1.9 mm	100 MHz	23 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE OR FLOW-THROUGH ARCHITECTURE	e1	20	260	.075 Amp	23 mm	5.2 ns
CYD18S72V18-200BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		1.5		72	GRID ARRAY			1 mm	85 Cel		256KX72	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	18874368 bit	1.42 V		e1				23 mm	3.3 ns
CYD36S72V18-133BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1430 mA	524288 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	512KX72	512K	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260	.59 Amp	27 mm	13 ns
CYD18S72V-100BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	3.3	3.3	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	3.465 V	1.9 mm	100 MHz	23 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE OR FLOW-THROUGH ARCHITECTURE	e1	20	260	.075 Amp	23 mm	5.2 ns
CYD09S72V18-167BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	131072 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	128KX72	128K	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.16 mm	167 MHz	23 mm	Not Qualified	9437184 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1			.2 Amp	23 mm	11 ns
CYD36S36V18-167BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.5		36	GRID ARRAY			1 mm	70 Cel		1MX36	1M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	37748736 bit	1.42 V		e1				23 mm	4 ns
CYD18S72V18-200BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	980 mA	262144 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.16 mm	200 MHz	23 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260	.3 Amp	23 mm	9 ns
CYD36S18V18-133BGXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1280 mA	2097152 words	COMMON	1.5	1.5/1.8	18	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260	.7 Amp	27 mm	13 ns
CYD36S36V18-133BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1220 mA	1048576 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260	.59 Amp	27 mm	13 ns
CYD09S72V18-200BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		1.5		72	GRID ARRAY			1 mm	85 Cel		128KX72	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	9437184 bit	1.42 V		e1	40	260		23 mm	3.3 ns
CYD18S72V18-167BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		1.5		72	GRID ARRAY			1 mm	85 Cel		256KX72	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	18874368 bit	1.42 V		e1	40	260		23 mm	4 ns
CYD09S72V18-167BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		1.5		72	GRID ARRAY			1 mm	85 Cel		128KX72	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	9437184 bit	1.42 V		e1				23 mm	4 ns
CYD36S72V18-167BGI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1730 mA	524288 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	85 Cel	3-STATE	512KX72	512K	1.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	167 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e0			.7 Amp	27 mm	4 ns
CYD36S72V18-133BGXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1550 mA	524288 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	85 Cel	3-STATE	512KX72	512K	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260	.7 Amp	27 mm	13 ns
CYD36S36V18-200BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.5		36	GRID ARRAY			1 mm	70 Cel		1MX36	1M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	37748736 bit	1.42 V		e1				23 mm	3.3 ns
CYD36S36V18-133BGXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1330 mA	1048576 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260	.7 Amp	27 mm	13 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.