FBGA SRAM 299

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
CY62177EV30LL-55BAXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	2097152 words	COMMON		2.5/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	8	SRAMs	.75 mm	85 Cel	3-STATE	2MX16	2M	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3					Not Qualified	33554432 bit		e1		260	.000017 Amp		55 ns
CY62168DV30LL-55BVIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON		2.5/3.3	8	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	2MX8	2M	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	16777216 bit					.00001 Amp		55 ns
CY62147EV30LL-45B2XAT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON		2.5/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit					.000007 Amp		45 ns
IS61WV25616BLL-10BLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit					.009 Amp		10 ns
IS61LV25616AL-10BI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	100 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit					.015 Amp		10 ns
IS61LV25616AL-10BLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	100 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit					.015 Amp		10 ns
K6F1616U6C-XF70	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	1048576 words	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48		3.3 V	1 mm		6 mm	Not Qualified	16777216 bit	2.7 V				.000015 Amp	7 mm	70 ns
K6F1616U6C-XF55	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48		3.3 V	1 mm		6 mm	Not Qualified	16777216 bit	2.7 V				.000015 Amp	7 mm	55 ns
N04M1618L1AB-85I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	GRID ARRAY, FINE PITCH				.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM		R-PBGA-B48		2.3 V			6 mm	Not Qualified	4194304 bit	1.4 V					8 mm	85 ns
N04M1618L1AB-150I	Onsemi	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		262144 words		1.8		16	GRID ARRAY, FINE PITCH				.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM		R-PBGA-B48		2.3 V			6 mm	Not Qualified	4194304 bit	1.4 V					8 mm	150 ns
M68AR024D70ZB1T	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	70 Cel	3-STATE	1MX16	1M	1.65 V	0 Cel		BOTTOM		R-PBGA-B48						Not Qualified	16777216 bit					.000015 Amp		70 ns
M68AR024D70ZB6T	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.65 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	16777216 bit					.000015 Amp		70 ns
M68AW064FL55ZB6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	65536 words	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM		R-PBGA-B48						Not Qualified	1048576 bit		e1			.000015 Amp		55 ns
M68AR024D70ZB6	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.65 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	16777216 bit					.000015 Amp		70 ns
M68AR024D70ZB1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	70 Cel	3-STATE	1MX16	1M	1.65 V	0 Cel		BOTTOM		R-PBGA-B48						Not Qualified	16777216 bit					.000015 Amp		70 ns
CY62136V18LL-70BAI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	7 mA	131072 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	2097152 bit					.000001 Amp		70 ns
STK14EC16-BF15ITR	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			75 mA	262144 words			3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit					.003 Amp		15 ns
CY14B102L-BA20XAT	Infineon Technologies	NON-VOLATILE SRAM	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			90 mA	262144 words			3/3.3	8	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	125 Cel		256KX8	256K		-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	2097152 bit				260	.005 Amp		20 ns
STK14EC16-BF45TR	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			50 mA	262144 words			3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	70 Cel		256KX16	256K		0 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit					.003 Amp		45 ns
CY62147G30-55BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON		2.5/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit					.000013 Amp		55 ns
CY62147GE30-55BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON		2.5/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit					.000013 Amp		55 ns
CY14B102N-BA20XAT	Infineon Technologies	NON-VOLATILE SRAM	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			90 mA	131072 words			3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	125 Cel		128KX16	128K		-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	2097152 bit				260	.005 Amp		20 ns
STK14EC16-BF25TR	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			65 mA	262144 words			3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	70 Cel		256KX16	256K		0 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit					.003 Amp		25 ns
STK14EC16-BF45ITR	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			52 mA	262144 words			3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit					.003 Amp		45 ns
CY62177EV18LL-70BAXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	2MX16	2M	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3					Not Qualified	33554432 bit		e1		260	.000017 Amp		70 ns
STK14EC16-BF15TR	Infineon Technologies	NON-VOLATILE SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			70 mA	262144 words			3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	70 Cel		256KX16	256K		0 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit					.003 Amp		15 ns
STK14EC16-BF25ITR	Infineon Technologies	NON-VOLATILE SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			70 mA	262144 words			3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		256KX16	256K		-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit					.003 Amp		25 ns
CY62137V18LL-70BAI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	7 mA	131072 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48						Not Qualified	2097152 bit		e0			.000001 Amp		70 ns
TC55VEM416BXGN40	Toshiba	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	1048576 words	COMMON		2.5/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	16777216 bit							55 ns
TC55YEM416BXGN55	Toshiba	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	12 mA	1048576 words	COMMON		1.8/2	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	16777216 bit							70 ns
R1WV6416RBG-5SR#S0	Renesas Electronics	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	70 Cel	3-STATE	4MX16	4M	2 V	0 Cel		BOTTOM		R-PBGA-B48	3					Not Qualified	67108864 bit				260	.000024 Amp		55 ns
70V3389S6BFI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3			83 MHz		Not Qualified	1179648 bit		e0	20	225	.03 Amp		6 ns
70V3389S6BFI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3			83 MHz		Not Qualified	1179648 bit		e0	20	225	.03 Amp		6 ns
70V3389S4BFGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	460 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3			133 MHz		Not Qualified	1179648 bit		e1	30	260	.015 Amp		4.2 ns
R1WV6416RBG-7SR#B0	Renesas Electronics	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	70 Cel	3-STATE	4MX16	4M	2 V	0 Cel		BOTTOM		R-PBGA-B48	3					Not Qualified	67108864 bit				260	.000024 Amp		70 ns
70V3389S6BFGI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3			83 MHz		Not Qualified	1179648 bit		e1	30	260	.03 Amp		6 ns
70T3589S166BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	65536 words	COMMON		2.5,2.5/3.3	36	GRID ARRAY, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX36	64K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3			166 MHz		Not Qualified	2359296 bit		e0	20	225	.02 Amp		12 ns
R1WV6416RBG-7SI#S0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	4MX16	4M	2 V	-40 Cel		BOTTOM		R-PBGA-B48	3					Not Qualified	67108864 bit				260	.000024 Amp		70 ns
70T3519S166BFI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	262144 words	COMMON		2.5,2.5/3.3	36	GRID ARRAY, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	85 Cel	3-STATE	256KX36	256K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3			166 MHz		Not Qualified	9437184 bit		e0	20	225	.02 Amp		12 ns
70T3599S166BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	131072 words	COMMON		2.5,2.5/3.3	36	GRID ARRAY, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	85 Cel	3-STATE	128KX36	128K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3			166 MHz		Not Qualified	4718592 bit		e0	20	225	.02 Amp		12 ns
R1WV6416RBG-5SR#B0	Renesas Electronics	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	70 Cel	3-STATE	4MX16	4M	2 V	0 Cel		BOTTOM		R-PBGA-B48	3					Not Qualified	67108864 bit				260	.000024 Amp		55 ns
R1WV6416RBG-7SI#B0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	4MX16	4M	2 V	-40 Cel		BOTTOM		R-PBGA-B48	3					Not Qualified	67108864 bit				260	.000024 Amp		70 ns
R1WV6416RBG-7SR#S0	Renesas Electronics	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON		3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	70 Cel	3-STATE	4MX16	4M	2 V	0 Cel		BOTTOM		R-PBGA-B48	3					Not Qualified	67108864 bit				260	.000024 Amp		70 ns
70T3589S166BFI	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	65536 words	COMMON		2.5,2.5/3.3	36	GRID ARRAY, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX36	64K	2.4 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3			166 MHz		Not Qualified	2359296 bit		e0	20	225	.02 Amp		12 ns
70T3519S166BFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	510 mA	262144 words	COMMON		2.5,2.5/3.3	36	GRID ARRAY, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	85 Cel	3-STATE	256KX36	256K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3			166 MHz		Not Qualified	9437184 bit		e1	30	260	.02 Amp		12 ns
70V7339S200BF	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	950 mA	524288 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	70 Cel	3-STATE	512KX18	512K	3.15 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3			200 MHz		Not Qualified	9437184 bit		e0	20	225	.03 Amp		3.4 ns
70V3389S4BFI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	460 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3			133 MHz		Not Qualified	1179648 bit		e0	20	225	.015 Amp		4.2 ns
70V3389S4BFI	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	460 mA	65536 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY, FINE PITCH	BGA208,17X17,32		SRAMs	.8 mm	85 Cel	3-STATE	64KX18	64K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3			133 MHz		Not Qualified	1179648 bit		e0	20	225	.015 Amp		4.2 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.