FBGA SRAM 299

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Memory Density	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Maximum Access Time
K6R1016V1D-FC12T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	55 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		Not Qualified	1048576 bit	e0		.001 Amp	12 ns
K6F4016U6C-FF55T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit	e0		.000003 Amp	55 ns
K6R4016C1C-FI120	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	190 mA	262144 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	4.5 V	-40 Cel		BOTTOM	R-PBGA-B48	3	Not Qualified	4194304 bit		240	.01 Amp	12 ns
K6R4016V1C-FL15T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	140 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit	e0		.0007 Amp	15 ns
K6R4016V1D-EP08T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit			.0014 Amp	8 ns
K6R4016V1C-FI15T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	155 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM	R-PBGA-B48	1	Not Qualified	4194304 bit			.0007 Amp	15 ns
K6R4016C1C-FC120	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	175 mA	262144 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	4.5 V	0 Cel		BOTTOM	R-PBGA-B48	3	Not Qualified	4194304 bit		240	.01 Amp	12 ns
K6R4016C1C-FE120	Samsung	STANDARD SRAM	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	190 mA	262144 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	4.5 V	-25 Cel		BOTTOM	R-PBGA-B48	3	Not Qualified	4194304 bit		240	.01 Amp	12 ns
K6R4016V1C-FL150	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	140 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel		BOTTOM	R-PBGA-B48	1	Not Qualified	4194304 bit			.0007 Amp	15 ns
K6R4016V1C-FC100	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	160 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel		BOTTOM	R-PBGA-B48	1	Not Qualified	4194304 bit			.0007 Amp	10 ns
K6R4016V1C-FP100	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	175 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM	R-PBGA-B48	1	Not Qualified	4194304 bit			.0007 Amp	10 ns
K6R4016V1C-FL20T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	130 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit	e0		.0007 Amp	20 ns
K6R4016V1C-FI12T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	165 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit	e0		.0007 Amp	12 ns
K6R4016V1C-FI150	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	155 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM	R-PBGA-B48	1	Not Qualified	4194304 bit			.0007 Amp	15 ns
K6R4016V1C-FP120	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	165 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM	R-PBGA-B48	1	Not Qualified	4194304 bit			.0007 Amp	12 ns
K6R4016V1C-FC150	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	140 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel		BOTTOM	R-PBGA-B48	1	Not Qualified	4194304 bit			.0007 Amp	15 ns
K6R4016C1C-FC20T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	190 mA	262144 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit	e0		.02 Amp	20 ns
K6R4016V1C-FI10T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	175 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit	e0		.0007 Amp	10 ns
K6R4016V1C-FL120	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	150 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel		BOTTOM	R-PBGA-B48	1	Not Qualified	4194304 bit			.0007 Amp	12 ns
K6R4016V1C-FI100	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	175 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM	R-PBGA-B48	1	Not Qualified	4194304 bit			.0007 Amp	10 ns
K6R4016V1C-FP20T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	145 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit	e0		.0007 Amp	20 ns
K6R4016C1C-FI15T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	195 mA	262144 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	4.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit	e0		.02 Amp	15 ns
K6R4016C1C-FI100	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	4.5 V	-40 Cel		BOTTOM	R-PBGA-B48	3	Not Qualified	4194304 bit		240	.01 Amp	10 ns
K6R4016V1C-FC10T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	160 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit	e0		.0007 Amp	10 ns
K6R4016V1D-EL10T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	65 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel		BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit			.005 Amp	10 ns
K6R4016C1C-FI10T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	4.5 V	-40 Cel		BOTTOM	R-PBGA-B48	3	Not Qualified	4194304 bit		240	.01 Amp	10 ns
K6R4016C1C-FE12T	Samsung	STANDARD SRAM	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	190 mA	262144 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	4.5 V	-25 Cel		BOTTOM	R-PBGA-B48	3	Not Qualified	4194304 bit		240	.01 Amp	12 ns
K6R4016C1C-FE15T	Samsung	STANDARD SRAM	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	4.5 V	-25 Cel		BOTTOM	R-PBGA-B48	3	Not Qualified	4194304 bit		240	.01 Amp	15 ns
K6R4016C1C-FE100	Samsung	STANDARD SRAM	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	4.5 V	-25 Cel		BOTTOM	R-PBGA-B48	3	Not Qualified	4194304 bit		240	.01 Amp	10 ns
K6R4016C1C-FC12T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	4.5 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit	e0		.02 Amp	12 ns
K6R4016V1C-FC120	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	150 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel		BOTTOM	R-PBGA-B48	1	Not Qualified	4194304 bit			.0007 Amp	12 ns
K6R4016C1C-FC10T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	185 mA	262144 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	4.5 V	0 Cel		BOTTOM	R-PBGA-B48	3	Not Qualified	4194304 bit		240	.01 Amp	10 ns
K6R4016V1C-FP20	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	145 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit	e0		.0007 Amp	20 ns
K6R4016V1C-FL12T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	150 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit	e0		.0007 Amp	12 ns
K6R4016V1C-FC20T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	130 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit	e0		.01 Amp	20 ns
K6R4016V1C-FL100	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	160 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel		BOTTOM	R-PBGA-B48	1	Not Qualified	4194304 bit			.0007 Amp	10 ns
K6R4016C1C-FC150	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	165 mA	262144 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	4.5 V	0 Cel		BOTTOM	R-PBGA-B48	3	Not Qualified	4194304 bit		240	.01 Amp	15 ns
K6R4016V1D-EL08T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	80 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel		BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit			.005 Amp	8 ns
K6R4016C1C-FI150	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	4.5 V	-40 Cel		BOTTOM	R-PBGA-B48	3	Not Qualified	4194304 bit		240	.01 Amp	15 ns
K6R4016V1C-FL20	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	130 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit	e0		.0007 Amp	20 ns
K6R4016C1C-FI12T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	200 mA	262144 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	4.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit	e0		.02 Amp	12 ns
K6R4016V1D-EC08T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	80 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	3 V	0 Cel		BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit			.005 Amp	8 ns
K6R4016V1C-FI120	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	165 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM	R-PBGA-B48	1	Not Qualified	4194304 bit			.0007 Amp	12 ns
K6R4016V1D-EP10T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	75 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit			.0014 Amp	10 ns
K6R4016V1C-FC12T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	150 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit	e0		.0007 Amp	12 ns
K6R4016C1C-FC15T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	195 mA	262144 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	4.5 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit	e0		.02 Amp	15 ns
K6R4016V1C-FL10T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	160 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	256KX16	256K	2 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		Not Qualified	4194304 bit	e0		.0007 Amp	10 ns
K6R4016C1C-FE150	Samsung	STANDARD SRAM	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	4.5 V	-25 Cel		BOTTOM	R-PBGA-B48	3	Not Qualified	4194304 bit		240	.01 Amp	15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.