FBGA SRAM 299

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Maximum Access Time
UPD442002F9-BC70X-BC1	Renesas Electronics	STANDARD SRAM	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON		2.5/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	2.2 V	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48			Not Qualified	2097152 bit	e0			.0000035 Amp	70 ns
UPD442002F9-DD10X-BC1	Renesas Electronics	STANDARD SRAM	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	2	2	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.8 V	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48			Not Qualified	2097152 bit	e0			.000003 Amp	100 ns
IDT70T3589S166BFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	65536 words	COMMON		2.5,2.5/3.3	36	GRID ARRAY, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	64KX36	64K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	166 MHz	Not Qualified	2359296 bit	e1	30	260	.015 Amp	12 ns
IDT70T631S12BFG8	Renesas Electronics	MULTI-PORT SRAM	COMMERCIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	355 mA	262144 words	COMMON		2.5,2.5/3.3	18	GRID ARRAY, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	70 Cel	3-STATE	256KX18	256K	2.4 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3		Not Qualified	4718592 bit	e1	30	260	.01 Amp	12 ns
IDT70T633S12BFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	395 mA	524288 words	COMMON		2.5,2.5/3.3	18	GRID ARRAY, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	512KX18	512K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3		Not Qualified	9437184 bit	e1	30	260	.02 Amp	12 ns
70V27L55BF	Renesas Electronics	APPLICATION SPECIFIC SRAM	COMMERCIAL	144	FBGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	180 mA	32768 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA144,13X13,32	SRAMs	.8 mm	70 Cel	3-STATE	32KX16	32K	3 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B144	3		Not Qualified	524288 bit	e0			.003 Amp	55 ns
IDT71L016L70BF	Renesas Electronics	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	65536 words	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	1.5 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B48	3		Not Qualified	1048576 bit	e0	30	225	.000005 Amp	70 ns
IDT70V639S15BFI8	Renesas Electronics	APPLICATION SPECIFIC SRAM	INDUSTRIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	490 mA	131072 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX18	128K	3.15 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	2	S-PBGA-B208	3		Not Qualified	2359296 bit	e0	20	225	.03 Amp	15 ns
IDT70T3599S133BFGI8	Renesas Electronics	MULTI-PORT SRAM	INDUSTRIAL	208	FBGA	SQUARE	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	131072 words	COMMON		2.5,2.5/3.3	36	GRID ARRAY, FINE PITCH	BGA208,17X17,32	SRAMs	.8 mm	85 Cel	3-STATE	128KX36	128K	2.4 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	2	S-PBGA-B208	3	133 MHz	Not Qualified	4718592 bit	e1	30	260	.02 Amp	15 ns
K1B1616B2B-FI70T	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B54	1		Not Qualified	16777216 bit					70 ns
K6R1016C1C-FC15T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	93 mA	65536 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B48			Not Qualified	1048576 bit	e0			.005 Amp	15 ns
K6F8016R6D-FF70	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	524288 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1 V	-40 Cel		BOTTOM		R-PBGA-B48	1		Not Qualified	8388608 bit					70 ns
K6R1016V1D-FI12T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	55 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48			Not Qualified	1048576 bit	e0			.001 Amp	12 ns
K6R1016C1C-FP10T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48			Not Qualified	1048576 bit	e0			.0003 Amp	10 ns
K6R1016V1C-FL150	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	93 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	2 V	0 Cel		BOTTOM		R-PBGA-B48	3		Not Qualified	1048576 bit			240	.0003 Amp	15 ns
K1S1616B1B-BI700	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B48	1		Not Qualified	16777216 bit	e3				70 ns
K6R1016C1C-FI150	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	93 mA	65536 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel		BOTTOM		R-PBGA-B48	3		Not Qualified	1048576 bit			240	.005 Amp	15 ns
K6R1016V1C-FC10T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel		BOTTOM		R-PBGA-B48	3		Not Qualified	1048576 bit			240	.005 Amp	10 ns
K6R1016V1D-FC10T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	65 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48			Not Qualified	1048576 bit	e0			.001 Amp	10 ns
K6R1016C1C-FL10	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48			Not Qualified	1048576 bit	e0			.0003 Amp	10 ns
K6R1016C1C-FI15T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	93 mA	65536 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48			Not Qualified	1048576 bit	e0			.005 Amp	15 ns
K6R1016C1C-FI12T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48			Not Qualified	1048576 bit	e0			.005 Amp	12 ns
K6F4016U6G-AF55	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	27 mA	262144 words	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B48	1		Not Qualified	4194304 bit	e3			.000003 Amp	55 ns
K1S1616B1B-FI70T	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48	1		Not Qualified	16777216 bit					70 ns
K6F1016V4B-FF55T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48			Not Qualified	1048576 bit	e0			.000001 Amp	55 ns
K6F4008R2C-FF85T	Samsung	STANDARD SRAM	INDUSTRIAL	36	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON		1.8/2	8	GRID ARRAY, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B36			Not Qualified	4194304 bit	e0				85 ns
K6R1016V1D-FC10	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	65 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48			Not Qualified	1048576 bit	e0			.001 Amp	10 ns
K6F4016U6G-EF70T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	22 mA	262144 words	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48	1		Not Qualified	4194304 bit				.000003 Amp	70 ns
K6F4016R4C-FF85T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON		1.8/2	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-45 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48			Not Qualified	4194304 bit	e0				85 ns
K6F4016R6C-ZF70T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON		1.8/2	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48			Not Qualified	4194304 bit	e0				70 ns
K6F2016V4D-FF55T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48			Not Qualified	2097152 bit	e0			.000002 Amp	55 ns
K6R1016V1D-FI08	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	80 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48			Not Qualified	1048576 bit	e0			.001 Amp	8 ns
K6R1016V1D-FC08T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	80 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48			Not Qualified	1048576 bit	e0			.001 Amp	8 ns
K6F8016R6D-XF700	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	524288 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3		Not Qualified	8388608 bit	e1		260		70 ns
K1B1616B2B-HI70	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B54	1		Not Qualified	16777216 bit	e3				70 ns
K6F1016V4B-FF70T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48			Not Qualified	1048576 bit	e0			.000001 Amp	70 ns
K6F4008S2D-FF85T	Samsung	STANDARD SRAM	INDUSTRIAL	36	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	2.5	2.5	8	GRID ARRAY, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B36			Not Qualified	4194304 bit	e0			.000003 Amp	85 ns
K6F1016U4B-FF70T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48			Not Qualified	1048576 bit	e0			.000001 Amp	70 ns
K6R1016V1C-FC150	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	93 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel		BOTTOM		R-PBGA-B48	3		Not Qualified	1048576 bit			240	.005 Amp	15 ns
K6R1016C1C-FC10T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B48			Not Qualified	1048576 bit	e0			.005 Amp	10 ns
K6R1016C1C-FL15T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	93 mA	65536 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48			Not Qualified	1048576 bit	e0			.0003 Amp	15 ns
K6T2008V2A-FF70T	Samsung	STANDARD SRAM	INDUSTRIAL	36	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	3.3	3.3	8	GRID ARRAY, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX8	256K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B36			Not Qualified	2097152 bit	e0				70 ns
K6F8016R6D-FF70T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	524288 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3		Not Qualified	8388608 bit	e0		240		70 ns
K6R1016C1C-FP10	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48			Not Qualified	1048576 bit	e0			.0003 Amp	10 ns
K1B1616B2B-BI700	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B54	1		Not Qualified	16777216 bit	e3				70 ns
K6R1016V1D-FC12	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	55 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48			Not Qualified	1048576 bit	e0			.001 Amp	12 ns
K6F8016U6D-XF55	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	28 mA	524288 words	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48			Not Qualified	8388608 bit				.000006 Amp	55 ns
K6F1616R6B-EF70T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	ASYNCHRONOUS	22 mA	1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel		BOTTOM		R-PBGA-B48	1		Not Qualified	16777216 bit					70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.