FBGA SRAM 299

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
K6F4016R4D-FF85T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON		1.8/2	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified	4194304 bit		e0				85 ns
K6R1016C1C-FC120	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel		BOTTOM	R-PBGA-B48	3				Not Qualified	1048576 bit			240	.005 Amp		12 ns
K6R1016V1C-FC15T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	93 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel		BOTTOM	R-PBGA-B48	3				Not Qualified	1048576 bit			240	.005 Amp		15 ns
K6R1016C1C-FC150	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	93 mA	65536 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	4.5 V	0 Cel		BOTTOM	R-PBGA-B48	3				Not Qualified	1048576 bit			240	.005 Amp		15 ns
K6R1016V1C-FL12T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	2 V	0 Cel		BOTTOM	R-PBGA-B48	3				Not Qualified	1048576 bit			240	.0003 Amp		12 ns
K6F4008R2D-FF85T	Samsung	STANDARD SRAM	INDUSTRIAL	36	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON		1.8/2	8	GRID ARRAY, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B36					Not Qualified	4194304 bit		e0				85 ns
K6R1016V1C-FI12T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel		BOTTOM	R-PBGA-B48	3				Not Qualified	1048576 bit			240	.005 Amp		12 ns
K6T2008U2A-FF85T	Samsung	STANDARD SRAM	INDUSTRIAL	36	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	3	3	8	GRID ARRAY, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX8	256K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B36					Not Qualified	2097152 bit		e0				85 ns
K6R1016C1C-FI20T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	4.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified	1048576 bit		e0		.005 Amp		20 ns
K6T2008U2A-FF70T	Samsung	STANDARD SRAM	INDUSTRIAL	36	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	3	3	8	GRID ARRAY, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX8	256K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B36					Not Qualified	2097152 bit		e0				70 ns
K6F4008U2C-FF70T	Samsung	STANDARD SRAM	INDUSTRIAL	36	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3	8	GRID ARRAY, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B36					Not Qualified	4194304 bit		e0		.000003 Amp		70 ns
K6F4016U6G-AF55T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	27 mA	262144 words	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel	MATTE TIN	BOTTOM	R-PBGA-B48	1				Not Qualified	4194304 bit		e3		.000003 Amp		55 ns
K6F8016S6M-FF85T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified	8388608 bit		e0		.000006 Amp		85 ns
K6R1016C1C-FP20T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified	1048576 bit		e0		.0003 Amp		20 ns
K6F2016V4A-I10	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified	2097152 bit		e0		.000003 Amp		100 ns
K6F1616U6C-XF70T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	1048576 words	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel		BOTTOM	R-PBGA-B48		3.3 V	1 mm	6 mm	Not Qualified	16777216 bit	2.7 V			.000015 Amp	7 mm	70 ns
K6F2016S4D-FF85T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified	2097152 bit		e0		.000002 Amp		85 ns
K6T2008V2A-FF85T	Samsung	STANDARD SRAM	INDUSTRIAL	36	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	3.3	3.3	8	GRID ARRAY, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX8	256K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B36					Not Qualified	2097152 bit		e0				85 ns
K6R1016V1C-FC120	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel		BOTTOM	R-PBGA-B48	3				Not Qualified	1048576 bit			240	.005 Amp		12 ns
K6R1016C1C-FL10T	Samsung	STANDARD SRAM	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel	3-STATE	64KX16	64K	2 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified	1048576 bit		e0		.0003 Amp		10 ns
K6F1616U6C-FF55	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel		BOTTOM	R-PBGA-B48		3.3 V	1 mm	6 mm	Not Qualified	16777216 bit	2.7 V			.000015 Amp	7 mm	55 ns
K6R1016V1C-FP100	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel		BOTTOM	R-PBGA-B48	3				Not Qualified	1048576 bit			240	.0003 Amp		10 ns
K6F4008U2C-FF55T	Samsung	STANDARD SRAM	INDUSTRIAL	36	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3	3	8	GRID ARRAY, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B36					Not Qualified	4194304 bit		e0		.000003 Amp		55 ns
K6F1616U6C-FF70	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	1048576 words	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel		BOTTOM	R-PBGA-B48		3.3 V	1 mm	6 mm	Not Qualified	16777216 bit	2.7 V			.000015 Amp	7 mm	70 ns
K6R1016V1C-FI10T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel		BOTTOM	R-PBGA-B48	3				Not Qualified	1048576 bit			240	.005 Amp		10 ns
K6R1016V1D-FI08T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	80 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified	1048576 bit		e0		.001 Amp		8 ns
K6R1016C1C-FP12T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	5	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified	1048576 bit		e0		.0003 Amp		12 ns
K1S1616B1B-BI70T	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM	R-PBGA-B48	1				Not Qualified	16777216 bit		e3				70 ns
K6F4008R2C-FF70T	Samsung	STANDARD SRAM	INDUSTRIAL	36	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON		1.8/2	8	GRID ARRAY, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B36					Not Qualified	4194304 bit		e0				70 ns
K6R1016V1D-FI10	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	65 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified	1048576 bit		e0		.001 Amp		10 ns
K1B1616B2B-BI70T	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM	R-PBGA-B54	1				Not Qualified	16777216 bit		e3				70 ns
K6F2016V4D-FF70T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified	2097152 bit		e0		.000002 Amp		70 ns
K6F8016U6D-FF70T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	22 mA	524288 words	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel		BOTTOM	R-PBGA-B48					Not Qualified	8388608 bit				.000006 Amp		70 ns
K1B1616B2B-BI70	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM	R-PBGA-B54	1				Not Qualified	16777216 bit		e3				70 ns
K6R1016V1C-FP120	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	95 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel		BOTTOM	R-PBGA-B48	3				Not Qualified	1048576 bit			240	.0003 Amp		12 ns
K6F4016U6G-EF70	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	22 mA	262144 words	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48					Not Qualified	4194304 bit		e0		.000003 Amp		70 ns
K6F4016U6G-AF70	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	22 mA	262144 words	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel	MATTE TIN	BOTTOM	R-PBGA-B48	1				Not Qualified	4194304 bit		e3		.000003 Amp		70 ns
K6F4008S2D-FF70T	Samsung	STANDARD SRAM	INDUSTRIAL	36	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	2.5	2.5	8	GRID ARRAY, FINE PITCH	BGA36,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B36					Not Qualified	4194304 bit		e0		.000003 Amp		70 ns
K1B1616B2B-HI700	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM	R-PBGA-B54	1				Not Qualified	16777216 bit		e3				70 ns
K6R1016V1C-FI100	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	105 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	3 V	-40 Cel		BOTTOM	R-PBGA-B48	3				Not Qualified	1048576 bit			240	.005 Amp		10 ns
K6R1016V1D-FI12	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	55 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	2 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified	1048576 bit		e0		.001 Amp		12 ns
K6F4016U6C-FF70T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified	4194304 bit		e0		.000003 Amp		70 ns
K6F4016R4D-FF70T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON		1.8/2	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified	4194304 bit		e0				70 ns
K6F1016S4B-FF70T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	65536 words	COMMON	2.5	2.5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	64KX16	64K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified	1048576 bit		e0		.0000005 Amp		70 ns
K6F4016V6D-FF55T	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1.5 V	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified	4194304 bit		e0		.000003 Amp		55 ns
K6F8016R6D-XF70	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	524288 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1 V	-40 Cel	MATTE TIN	BOTTOM	R-PBGA-B48	1				Not Qualified	8388608 bit		e3				70 ns
K1B1616B2B-HI70T	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel	MATTE TIN	BOTTOM	R-PBGA-B54	1				Not Qualified	16777216 bit		e3				70 ns
K1B1616B2B-FI70	Samsung	APPLICATION SPECIFIC SRAM	INDUSTRIAL	54	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1048576 words	COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel		BOTTOM	R-PBGA-B54	1				Not Qualified	16777216 bit						70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.