Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
510 mA |
65536 words |
COMMON |
2.5,2.5/3.3 |
36 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX36 |
64K |
2.4 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
166 MHz |
Not Qualified |
2359296 bit |
e1 |
30 |
260 |
.02 Amp |
12 ns |
|||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
510 mA |
262144 words |
COMMON |
2.5,2.5/3.3 |
36 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
2.4 V |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
166 MHz |
Not Qualified |
9437184 bit |
e0 |
20 |
225 |
.02 Amp |
12 ns |
||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
510 mA |
131072 words |
COMMON |
2.5,2.5/3.3 |
36 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
2.4 V |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
166 MHz |
Not Qualified |
4718592 bit |
e0 |
20 |
225 |
.02 Amp |
12 ns |
||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
510 mA |
65536 words |
COMMON |
2.5,2.5/3.3 |
36 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX36 |
64K |
2.4 V |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
166 MHz |
Not Qualified |
2359296 bit |
e0 |
20 |
225 |
.02 Amp |
12 ns |
||||||||||||||||||
|
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
INDUSTRIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
360 mA |
65536 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX18 |
64K |
3.15 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
83 MHz |
Not Qualified |
1179648 bit |
e1 |
30 |
260 |
.03 Amp |
6 ns |
|||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
510 mA |
65536 words |
COMMON |
2.5,2.5/3.3 |
36 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX36 |
64K |
2.4 V |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
166 MHz |
Not Qualified |
2359296 bit |
e0 |
20 |
225 |
.02 Amp |
12 ns |
||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
510 mA |
262144 words |
COMMON |
2.5,2.5/3.3 |
36 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
2.4 V |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
166 MHz |
Not Qualified |
9437184 bit |
e0 |
20 |
225 |
.015 Amp |
12 ns |
||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
35 mA |
65536 words |
COMMON |
3 |
3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
1.5 V |
0 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
R-PBGA-B48 |
3 |
Not Qualified |
1048576 bit |
e0 |
30 |
225 |
.000005 Amp |
100 ns |
|||||||||||||||||||
|
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
COMMERCIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
360 mA |
65536 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
64KX18 |
64K |
3.15 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
100 MHz |
Not Qualified |
1179648 bit |
e1 |
30 |
260 |
.015 Amp |
5 ns |
|||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
20 mA |
262144 words |
COMMON |
3 |
3/3.3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
2.7 V |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
4194304 bit |
.000002 Amp |
45 ns |
|||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
510 mA |
131072 words |
COMMON |
2.5,2.5/3.3 |
36 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
2.4 V |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
166 MHz |
Not Qualified |
4718592 bit |
e0 |
20 |
225 |
.02 Amp |
12 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
405 mA |
524288 words |
COMMON |
2.5,2.5/3.3 |
18 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
2.4 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
Not Qualified |
9437184 bit |
e1 |
30 |
260 |
.01 Amp |
10 ns |
||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
COMMON |
3/3.3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
2.7 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
2097152 bit |
e0 |
.000004 Amp |
70 ns |
|||||||||||||||||||||||
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
INDUSTRIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
460 mA |
65536 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX18 |
64K |
3.15 V |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
133 MHz |
Not Qualified |
1179648 bit |
e0 |
20 |
225 |
.015 Amp |
4.2 ns |
||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
160 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
3.15 V |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
Not Qualified |
1048576 bit |
e1 |
.01 Amp |
10 ns |
||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
450 mA |
262144 words |
COMMON |
2.5,2.5/3.3 |
36 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
2.4 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
166 MHz |
Not Qualified |
9437184 bit |
e1 |
30 |
260 |
.015 Amp |
12 ns |
|||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
40 mA |
1048576 words |
COMMON |
3/3.3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
2.7 V |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
3 |
Not Qualified |
16777216 bit |
260 |
.000006 Amp |
55 ns |
||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
20 mA |
262144 words |
COMMON |
3/3.3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
2.7 V |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
4194304 bit |
.000002 Amp |
55 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
35 mA |
524288 words |
COMMON |
2.5/3.3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
512KX16 |
512K |
1.5 V |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
3 |
Not Qualified |
8388608 bit |
260 |
55 ns |
|||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
COMMON |
2.5/3.3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
2.2 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
2097152 bit |
e0 |
.0000035 Amp |
85 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
370 mA |
262144 words |
COMMON |
2.5,2.5/3.3 |
36 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
2.4 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
133 MHz |
Not Qualified |
9437184 bit |
e1 |
30 |
260 |
.015 Amp |
15 ns |
|||||||||||||||||
|
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
INDUSTRIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
460 mA |
65536 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX18 |
64K |
3.15 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
133 MHz |
Not Qualified |
1179648 bit |
e1 |
30 |
260 |
.015 Amp |
4.2 ns |
|||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
510 mA |
65536 words |
COMMON |
2.5,2.5/3.3 |
36 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX36 |
64K |
2.4 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
166 MHz |
Not Qualified |
2359296 bit |
e1 |
30 |
260 |
.02 Amp |
12 ns |
|||||||||||||||||
|
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
COMMERCIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
460 mA |
65536 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
64KX18 |
64K |
3.15 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
133 MHz |
Not Qualified |
1179648 bit |
e1 |
30 |
260 |
.015 Amp |
4.2 ns |
|||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
35 mA |
131072 words |
COMMON |
3/3.3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
2.7 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
2097152 bit |
e0 |
.000004 Amp |
55 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
405 mA |
262144 words |
COMMON |
2.5,2.5/3.3 |
18 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
2.4 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
Not Qualified |
4718592 bit |
e1 |
30 |
260 |
.01 Amp |
10 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
510 mA |
262144 words |
COMMON |
2.5,2.5/3.3 |
36 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
2.4 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
166 MHz |
Not Qualified |
9437184 bit |
e1 |
30 |
260 |
.015 Amp |
12 ns |
|||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
25 mA |
131072 words |
COMMON |
2 |
2 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
1.8 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
2097152 bit |
e0 |
.000003 Amp |
120 ns |
||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
510 mA |
262144 words |
COMMON |
2.5,2.5/3.3 |
36 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
2.4 V |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
166 MHz |
Not Qualified |
9437184 bit |
e0 |
20 |
225 |
.015 Amp |
12 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
395 mA |
262144 words |
COMMON |
2.5,2.5/3.3 |
18 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX18 |
256K |
2.4 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
Not Qualified |
4718592 bit |
e1 |
30 |
260 |
.02 Amp |
12 ns |
||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
25 mA |
131072 words |
COMMON |
2 |
2 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
1.8 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
2097152 bit |
e0 |
.000003 Amp |
85 ns |
||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
450 mA |
262144 words |
COMMON |
2.5,2.5/3.3 |
36 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
2.4 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
133 MHz |
Not Qualified |
9437184 bit |
e1 |
30 |
260 |
.015 Amp |
15 ns |
|||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
40 mA |
1048576 words |
COMMON |
3/3.3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
2.7 V |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
3 |
Not Qualified |
16777216 bit |
260 |
.000006 Amp |
55 ns |
||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
150 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
3 V |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B48 |
3 |
Not Qualified |
1048576 bit |
e0 |
.01 Amp |
12 ns |
|||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
35 mA |
65536 words |
COMMON |
3 |
3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
1.5 V |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
R-PBGA-B48 |
3 |
Not Qualified |
1048576 bit |
e0 |
30 |
225 |
.00001 Amp |
100 ns |
|||||||||||||||||||
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
COMMERCIAL |
144 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
225 mA |
32768 words |
COMMON |
3.3 |
3.3 |
16 |
GRID ARRAY, FINE PITCH |
BGA144,13X13,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
32KX16 |
32K |
3 V |
0 Cel |
TIN LEAD |
BOTTOM |
2 |
S-PBGA-B144 |
3 |
Not Qualified |
524288 bit |
e0 |
.006 Amp |
55 ns |
||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
445 mA |
262144 words |
COMMON |
2.5,2.5/3.3 |
18 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX18 |
256K |
2.4 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
Not Qualified |
4718592 bit |
e1 |
30 |
260 |
.02 Amp |
10 ns |
||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
40 mA |
1048576 words |
COMMON |
3/3.3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
2.7 V |
0 Cel |
BOTTOM |
R-PBGA-B48 |
3 |
Not Qualified |
16777216 bit |
260 |
.000006 Amp |
70 ns |
||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
305 mA |
262144 words |
COMMON |
2.5,2.5/3.3 |
18 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
2.4 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
Not Qualified |
4718592 bit |
e1 |
30 |
260 |
.01 Amp |
15 ns |
||||||||||||||||||
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
INDUSTRIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
360 mA |
65536 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX18 |
64K |
3.15 V |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
83 MHz |
Not Qualified |
1179648 bit |
e0 |
20 |
225 |
.03 Amp |
6 ns |
||||||||||||||||||
|
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
COMMERCIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
400 mA |
65536 words |
COMMON |
2.5/3.3,3.3 |
36 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
64KX36 |
64K |
3.15 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
133 MHz |
Not Qualified |
2359296 bit |
e1 |
30 |
260 |
.03 Amp |
4.2 ns |
|||||||||||||||||
|
Renesas Electronics |
APPLICATION SPECIFIC SRAM |
COMMERCIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
310 mA |
65536 words |
COMMON |
2.5/3.3,3.3 |
18 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
64KX18 |
64K |
3.15 V |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
83 MHz |
Not Qualified |
1179648 bit |
e1 |
30 |
260 |
.015 Amp |
6 ns |
|||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
COMMON |
2.5/3.3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
2.2 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
2097152 bit |
e0 |
.0000035 Amp |
100 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
40 mA |
1048576 words |
COMMON |
3/3.3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
2.7 V |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
3 |
Not Qualified |
16777216 bit |
260 |
.000006 Amp |
70 ns |
||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
OTHER |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
COMMON |
3/3.3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
2.7 V |
-25 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
2097152 bit |
e0 |
.000004 Amp |
85 ns |
|||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
45 mA |
65536 words |
COMMON |
3 |
3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
1.5 V |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
R-PBGA-B48 |
3 |
Not Qualified |
1048576 bit |
e0 |
30 |
225 |
.00001 Amp |
70 ns |
|||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
208 |
FBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
510 mA |
131072 words |
COMMON |
2.5,2.5/3.3 |
36 |
GRID ARRAY, FINE PITCH |
BGA208,17X17,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
2.4 V |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
2 |
S-PBGA-B208 |
3 |
166 MHz |
Not Qualified |
4718592 bit |
e0 |
20 |
225 |
.02 Amp |
12 ns |
||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
40 mA |
1048576 words |
COMMON |
3/3.3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
2.7 V |
0 Cel |
BOTTOM |
R-PBGA-B48 |
3 |
Not Qualified |
16777216 bit |
260 |
.000006 Amp |
70 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.