SURFACE MOUNT RF & Microwave Amplifiers 2,305

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC481MP86TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1			85 mA		8	SL,4GW-LD,.085CIR		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC481ST89TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1					8	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC8121	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT			PHEMT	1				COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	19 dB	-55 Cel				81000 MHz	86000 MHz
HMC741ST89ERTR	Analog Devices		SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1					5	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC772LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1					4	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	TUNGSTEN NICKEL GOLD
HMC561LP3ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm			COMPONENT	5	LCC16,.12SQ,20	50 ohm		85 Cel		-40 Cel	Matte Tin (Sn) - annealed		e3	8000 MHz	21000 MHz
HMC372LP3	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	11.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	700 MHz	1000 MHz
HMC718LP4	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY		2	-5 dBm		281 mA	COMPONENT	3/5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	25 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	600 MHz	1400 MHz
HMC326MS8GRTR	Analog Devices		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1					5	TSSOP8,.19		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC462LP5TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1			84 mA		5	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN LEAD		e0
HMC480ST89ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1					8	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC308ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm			COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel				800 MHz	3800 MHz
HMC685LP4ETR	Analog Devices	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BICMOS				140 mA		5	LCC24,.16SQ,20		RF/Microwave Mixers	85 Cel		-40 Cel	MATTE TIN		e3	1700 MHz	2200 MHz
HMC633LC4	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	5 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	25 dB	-40 Cel	GOLD OVER NICKEL		e4	5500 MHz	17000 MHz
HMC413QS16G	Analog Devices	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	3.6/5	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	1600 MHz	2200 MHz
HMC684LP4ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BICMOS				100 mA		5	LCC24,.16SQ,20		RF/Microwave Mixers	85 Cel		-40 Cel	MATTE TIN		e3
HMC619LP5	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	27 dBm			COMPONENT	12	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	150 Cel	9.5 dB	-55 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	10000 MHz
HMC441LP3ERTR	Analog Devices		SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1			115 mA		5	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC591LP5TR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1					7	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC441LM1RTR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	15 dBm		115 mA	COMPONENT	5	LCC8,.2SQ,40	50 ohm		85 Cel	11 dB	-40 Cel				7000 MHz	15500 MHz
ADL5570ACPZ-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1		10		COMPONENT	3.5	LCC16,.16SQ,25	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-40 Cel	Matte Tin (Sn)		e3	2300 MHz	2400 MHz
HMC311SC70	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm		74 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	8000 MHz
HMC8401-SX	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8		PHEMT	1	20 dBm		60 mA	COMPONENT	7.5	DIE OR CHIP	50 ohm		85 Cel	12.5 dB	-55 Cel				10 MHz	28000 MHz
HMC591LP5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	7	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	6000 MHz	9500 MHz
HMC356LP3	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	350 MHz	550 MHz
MAX2644EXT+T	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		11 mA	COMPONENT	3	TSSOP6,.08	50 ohm		85 Cel	15 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2400 MHz	2500 MHz
MAX2650EUS+T	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		13 dBm	1.3	24 mA	COMPONENT	5	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	16.5 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	800 MHz	1000 MHz
MAX2373ETC+	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	850 MHz	940 MHz
MAX2679BENS+T	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	4			1	5 dBm	1.67		COMPONENT	1.8	BGA4,2X2,16	50 ohm		85 Cel	16.5 dB	-40 Cel
MAX2640AUT+	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			7.8 mA		3/5	TSOP6,.11,37		RF/Microwave Amplifiers	125 Cel		-40 Cel	Matte Tin (Sn) - annealed		e3
MAX2371ETC	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	TIN LEAD		e0	136 MHz	174 MHz
MAX2655EXT+T	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		11.1 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	NICKEL GOLD PALLADIUM			1400 MHz	1700 MHz
MAX2614ETA+	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8			1	20 dBm	1.67		COMPONENT	5		50 ohm		85 Cel	17.5 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	40 MHz	4000 MHz
MAX2634AXT+	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS	1	5 dBm		6 mA	COMPONENT	2.5/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	125 Cel	10 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	315 MHz	433 MHz
MAX2679BENS+	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	4			1	5 dBm	1.67		COMPONENT	1.8	BGA4,2X2,16	50 ohm		85 Cel	16.5 dB	-40 Cel
MAX2679ENS+T	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	4			1	5 dBm	1.67		COMPONENT	1.8	BGA4,2X2,16	50 ohm		85 Cel	19 dB	-40 Cel
MAX2641EUT+T	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		6.4 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	125 Cel	12.4 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	1400 MHz	2500 MHz
MAX2644EXT+	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		11 mA	COMPONENT	3	TSSOP6,.08	50 ohm		85 Cel	15 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2400 MHz	2500 MHz
MAX2657EWT+T	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS	1	5 dBm			COMPONENT	1.8/3	BGA6,2X3,16	50 ohm	RF/Microwave Amplifiers	85 Cel	19.5 dB	-40 Cel	TIN SILVER COPPER NICKEL	CMOS COMPATIBLE	e2
MAX2692EWS+T	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BICMOS	1	5 dBm			COMPONENT	1.8/3.3	BGA4,2X2,16	50 ohm	RF/Microwave Amplifiers	85 Cel	13.2 dB	-40 Cel	TIN SILVER COPPER NICKEL		e2
MAX2371ETC+	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	136 MHz	174 MHz
MAX2613ETA+	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8			1	20 dBm	1.43		COMPONENT	5		50 ohm		85 Cel	18.1 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	40 MHz	4000 MHz
MAX2641EUT+	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		6.4 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.4 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	1400 MHz	2500 MHz
MAX2659ELT+	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS	1	10 dBm		5.6 mA	COMPONENT	1.8/3	SOLCC6,.04,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16.5 dB	-40 Cel	GOLD NICKEL	LOW NOISE	e4
MAX2630EUS+	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	800 MHz	1000 MHz
MAX2640EUT+	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		6.4 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.8 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	400 MHz	1500 MHz
MAX2679ENS+	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	4			1	5 dBm	1.67		COMPONENT	1.8	BGA4,2X2,16	50 ohm		85 Cel	19 dB	-40 Cel	TIN SILVER COPPER NICKEL		e2
MAX2612ETA+	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8			1	20 dBm	1.22		COMPONENT	5		50 ohm		85 Cel	17.5 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	40 MHz	4000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.