SURFACE MOUNT RF & Microwave Amplifiers 2,305

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

AFIC31025GNR1

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

2

20 dBm

10

COMPONENT

28

50 ohm

150 Cel

30.5 dB

-40 Cel

TIN

e3

2400 MHz

3100 MHz

BGS8H2X

NXP Semiconductors

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

IEC-60134

1

26 dBm

1.67

7.8 mA

COMPONENT

1.8,2.8

SOLCC6,.03,16

50 ohm

85 Cel

9.2 dB

-40 Cel

2300 MHz

2690 MHz

934068191115

NXP Semiconductors

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

IEC-60134

1

10 dBm

1.78

.002 mA

COMPONENT

1.8

SOLCC6,.03,16

50 ohm

1559 MHz

1610 MHz

BLM7G1822S-40ABY

NXP Semiconductors

SURFACE MOUNT

16

PLASTIC/EPOXY

2

28

FL16(UNSPEC)

RF/Microwave Amplifiers

BGA6289,135

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

1

15 dBm

96 mA

COMPONENT

8

TO-243

50 ohm

RF/Microwave Amplifiers

12 dB

Tin (Sn)

e3

850 MHz

2500 MHz

BGM1014

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

-10 dBm

25 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

25 dB

-40 Cel

Tin (Sn)

LOW NOISE

e3

100 MHz

3000 MHz

BGA6489,135

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

1

15 dBm

86 mA

COMPONENT

8

TO-243

50 ohm

RF/Microwave Amplifiers

15 dB

Tin (Sn)

e3

850 MHz

2500 MHz

SA5209D

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

BIPOLAR

55 mA

COMPONENT

5

SOP16,.25

50 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

e4

0 MHz

850 MHz

BGY148B

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

HYBRID

13 dBm

3

.1 mA

MODULE

6

SMSIP4

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

430 MHz

488 MHz

BGY205

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

4

CERAMIC

HYBRID

8.5 dBm

2

MODULE

6

SMSIP4,4GNDFLNG

50 ohm

RF/Microwave Amplifiers

100 Cel

32.5 dB

-30 Cel

880 MHz

915 MHz

SA5219D

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

BIPOLAR

50 mA

COMPONENT

5

SOP16,.25

50 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

e4

0 MHz

700 MHz

BGU6104,147

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

40 mA

COMPONENT

3

SOLCC6,.08,20

RF/Microwave Amplifiers

85 Cel

5 dB

-40 Cel

TIN

e3

40 MHz

4000 MHz

MMG1001NT1

NXP Semiconductors

WIDE BAND HIGH POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

265 mA

COMPONENT

12/24

SOP16,.35,32

75 ohm

RF/Microwave Amplifiers

100 Cel

19 dB

-20 Cel

40 MHz

870 MHz

BGA7020,135

NXP Semiconductors

SURFACE MOUNT

3

PLASTIC/EPOXY

1

130 mA

5

TO-243

RF/Microwave Amplifiers

BGA7027,115

NXP Semiconductors

SURFACE MOUNT

3

PLASTIC/EPOXY

1

195 mA

5

TO-243

RF/Microwave Amplifiers

TIN

e3

MRFIC0930R2

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

3 dBm

12 mA

COMPONENT

2.8

SOP8,.25

RF/Microwave Amplifiers

70 Cel

17 dB

-30 Cel

Tin/Lead (Sn/Pb)

LOW NOISE

e0

800 MHz

1000 MHz

BGM1012

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

19 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

16 dB

Tin (Sn)

LOW NOISE

e3

100 MHz

3000 MHz

934068534115

NXP Semiconductors

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

IEC-60134

1

26 dBm

1.22

7 mA

COMPONENT

0.8/1.8

50 ohm

85 Cel

10.5 dB

-40 Cel

2300 MHz

2690 MHz

BGA7027,135

NXP Semiconductors

SURFACE MOUNT

3

PLASTIC/EPOXY

1

195 mA

5

TO-243

RF/Microwave Amplifiers

TIN

e3

SA2411DH

NXP Semiconductors

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

COMPONENT

3

TSSOP16,.25

50 ohm

RF/Microwave Amplifiers

85 Cel

13 dB

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

e4

2400 MHz

2500 MHz

BLM7G22S-60PBG,118

NXP Semiconductors

SURFACE MOUNT

16

PLASTIC/EPOXY

2

28

SOP16(UNSPEC)

RF/Microwave Amplifiers

BGA7127,118

NXP Semiconductors

SURFACE MOUNT

8

PLASTIC/EPOXY

1

325 mA

5

SOLCC8,.12,20

RF/Microwave Amplifiers

SA5204AD

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

1

1.5

33 mA

COMPONENT

6

SOP8,.25

50 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

0 MHz

350 MHz

BGA7130,118

NXP Semiconductors

SURFACE MOUNT

8

PLASTIC/EPOXY

1

550 mA

5

SOLCC8,.12,20

RF/Microwave Amplifiers

BGA3015,115

NXP Semiconductors

SURFACE MOUNT

3

PLASTIC/EPOXY

1

125 mA

8

TO-243

RF/Microwave Amplifiers

85 Cel

-40 Cel

TIN

e3

A2I20D040GNR1

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

18 dBm

10

COMPONENT

28

50 ohm

150 Cel

31.5 dB

-40 Cel

TIN

e3

1400 MHz

2200 MHz

BLM7G24S-30BGY

NXP Semiconductors

SURFACE MOUNT

16

PLASTIC/EPOXY

1

28

SOP16(UNSPEC)

RF/Microwave Amplifiers

CGY2023G

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

48

PLASTIC/EPOXY

GAAS

2 dBm

COMPONENT

3.3

QFP48,.35SQ,20

RF/Microwave Amplifiers

85 Cel

33 dB

-20 Cel

1710 MHz

1785 MHz

MMG1001T1

NXP Semiconductors

WIDE BAND HIGH POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

265 mA

COMPONENT

12/24

SOP16,.35,32

75 ohm

RF/Microwave Amplifiers

100 Cel

19 dB

-20 Cel

40 MHz

870 MHz

BGY120A

NXP Semiconductors

NARROW BAND MEDIUM POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

HYBRID

7 dBm

3

.1 mA

MODULE

3.6

SMSIP4

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

824 MHz

849 MHz

CGY2014ATW

NXP Semiconductors

NARROW BAND MEDIUM POWER

SURFACE MOUNT

20

PLASTIC/EPOXY

GAAS

2

10 dBm

300 mA

COMPONENT

2.8,3.5

TSSOP20,.25

50 ohm

RF/Microwave Amplifiers

85 Cel

-20 Cel

IT CAN ALSO OPERATE AT 1710 TO 1910 MHZ

880 MHz

915 MHz

BGS67A

NXP Semiconductors

NARROW BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

95 mA

COMPONENT

12

DILCC8,.46

75 ohm

RF/Microwave Amplifiers

100 Cel

25 dB

-20 Cel

LOW NOISE, HIGH RELIABILITY

5 MHz

65 MHz

BGU6009/N2X

NXP Semiconductors

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

IEC-60134

1

10 dBm

1.78

.002 mA

COMPONENT

1.8

SOLCC6,.03,16

50 ohm

1559 MHz

1610 MHz

CGY2013G

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

48

PLASTIC/EPOXY

GAAS

2 dBm

3 mA

COMPONENT

3.3

QFP48,.35SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

35.5 dB

-20 Cel

LOW NOISE

880 MHz

915 MHz

BGA7014,135

NXP Semiconductors

SURFACE MOUNT

3

PLASTIC/EPOXY

1

85 mA

5

TO-243

RF/Microwave Amplifiers

MRFIC0916T1

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

BIPOLAR

10 dBm

5.6 mA

COMPONENT

2.7

SOT-143R

50 ohm

RF/Microwave Amplifiers

100 Cel

16.5 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

100 MHz

2500 MHz

BLM7G1822S-20PBY

NXP Semiconductors

SURFACE MOUNT

16

PLASTIC/EPOXY

2

28

FL16(UNSPEC)

RF/Microwave Amplifiers

BGA7124,118

NXP Semiconductors

SURFACE MOUNT

8

PLASTIC/EPOXY

1

200 mA

3.3/5

SOLCC8,.12,20

RF/Microwave Amplifiers

BGM1012,115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

19 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

16 dB

Tin (Sn)

e3

100 MHz

3000 MHz

CGY2032BTS

NXP Semiconductors

NARROW BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

15 dBm

800 mA

COMPONENT

3.2

SSOP16,.25

50 ohm

RF/Microwave Amplifiers

85 Cel

-30 Cel

1880 MHz

1900 MHz

BLM7G22S-60PB,118

NXP Semiconductors

SURFACE MOUNT

16

PLASTIC/EPOXY

2

28

FL16(UNSPEC)

RF/Microwave Amplifiers

CGY2010G

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

48

PLASTIC/EPOXY

GAAS

1.5 dBm

COMPONENT

4.5

QFP48,.35SQ,20

RF/Microwave Amplifiers

85 Cel

-20 Cel

880 MHz

915 MHz

SA5205AD

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

1

1.5

33 mA

COMPONENT

6

SOP8,.25

50 ohm

RF/Microwave Amplifiers

85 Cel

17 dB

-40 Cel

0 MHz

600 MHz

BGA7017,135

NXP Semiconductors

SURFACE MOUNT

3

PLASTIC/EPOXY

1

100 mA

5

TO-243

RF/Microwave Amplifiers

934069191115

NXP Semiconductors

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

IEC-60134

1

26 dBm

1.67

7.8 mA

COMPONENT

1.8,2.8

SOLCC6,.03,16

50 ohm

85 Cel

9.2 dB

-40 Cel

2300 MHz

2690 MHz

BGY119C

NXP Semiconductors

SURFACE MOUNT

4

CERAMIC

HYBRID

4.8

SMSIP4,4GNDFLNG

RF/Microwave Amplifiers

Tin/Lead (Sn/Pb)

e0

BGA6589,135

NXP Semiconductors

WIDE BAND MEDIUM POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

1

15 dBm

89 mA

COMPONENT

9

TO-243

50 ohm

RF/Microwave Amplifiers

15 dB

Tin (Sn)

e3

850 MHz

2500 MHz

SA5209D,602

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

BIPOLAR

55 mA

COMPONENT

5

SOP16,.25

50 ohm

RF/Microwave Amplifiers

85 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

e4

0 MHz

850 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.