SURFACE MOUNT RF & Microwave Amplifiers 2,305

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

BGU8006,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

1.8

BGA6,2X3,8

RF/Microwave Amplifiers

85 Cel

-40 Cel

BGA2714

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

5.7 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

16 dB

Tin (Sn)

e3

0 MHz

2700 MHz

MMG3010NT1

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

63 mA

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

12 dB

MATTE TIN

e3

0 MHz

6000 MHz

BGA2716

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

-10 dBm

21 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

19 dB

Tin (Sn)

e3

100 MHz

3000 MHz

BGA2802,115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

-16.5 dBm

15.2 mA

COMPONENT

3.3

TSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

29.6 dB

-40 Cel

TIN

LOW NOISE

e3

0 MHz

2200 MHz

935316286528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

18 dBm

10

COMPONENT

28

50 ohm

150 Cel

31.5 dB

-40 Cel

Tin (Sn)

e3

1400 MHz

2200 MHz

BGA2865,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

29.7 mA

5

TSSOP6,.08

RF/Microwave Amplifiers

935322497528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

26 dBm

10

COMPONENT

28

50 ohm

150 Cel

23 dB

-40 Cel

Tin (Sn)

e3

3400 MHz

3800 MHz

935316291528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

18 dBm

10

COMPONENT

28

50 ohm

150 Cel

31.5 dB

-40 Cel

Tin (Sn)

e3

1400 MHz

2200 MHz

BGA2712

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

15 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

16 dB

Tin (Sn)

e3

100 MHz

3000 MHz

BGU7052,118

NXP Semiconductors

SURFACE MOUNT

10

PLASTIC/EPOXY

1

95 mA

3.3

SOLCC10,.12,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

935375786528

NXP Semiconductors

WIDE BAND HIGH POWER

SURFACE MOUNT

12

PLASTIC/EPOXY

LDMOS

1

20 dBm

10

COMPONENT

48

50 ohm

150 Cel

35 dB

-40 Cel

Tin (Sn)

e3

575 MHz

960 MHz

935361937528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

1

20 dBm

10

COMPONENT

28

LCC24,.3SQ,32

50 ohm

150 Cel

29.7 dB

-40 Cel

Tin (Sn)

e3

2400 MHz

2500 MHz

BGU8051

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

20 dBm

1.07

60 mA

COMPONENT

5

SOLCC8,.08,20

50 ohm

85 Cel

17 dB

-40 Cel

300 MHz

1500 MHz

BGA2715,115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

-10 dBm

5.5 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

18 dB

Tin (Sn)

e3

100 MHz

3000 MHz

BGA2031/1,115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

10 dBm

1.4

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

23 dB

Tin (Sn)

e3

800 MHz

2500 MHz

BGU7053,118

NXP Semiconductors

SURFACE MOUNT

10

PLASTIC/EPOXY

1

110 mA

3.3

SOLCC10,.12,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

935343961528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

2

20 dBm

10

COMPONENT

28

50 ohm

150 Cel

30.5 dB

-40 Cel

Tin (Sn)

e3

2400 MHz

3100 MHz

BGA2816,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

25.5 mA

3.3

TSSOP6,.08

RF/Microwave Amplifiers

BGA2801,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

16.3 mA

3.3

TSSOP6,.08

RF/Microwave Amplifiers

TIN

e3

MMG3009NT1

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

82 mA

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

14.3 dB

MATTE TIN

e3

0 MHz

6000 MHz

935320796147

NXP Semiconductors

WIDE BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

HYBRID

1

10 dBm

1.55

COMPONENT

5

LCC24,.16SQ,20

50 ohm

34.8 dB

Tin (Sn)

e3

1500 MHz

2700 MHz

BGU7033,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

60 mA

5

TSSOP6,.08

RF/Microwave Amplifiers

70 Cel

-10 Cel

TIN

e3

MMG3011NT1

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

48 mA

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

13.5 dB

MATTE TIN

e3

0 MHz

6000 MHz

MW7IC915NT1

NXP Semiconductors

WIDE BAND HIGH POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

MOS

1

4.7 dBm

10

COMPONENT

28

LCC24,.3SQ,32

50 ohm

RF/Microwave Amplifiers

35 dB

TIN

e3

728 MHz

960 MHz

MMG3008NT1

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

48 mA

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

17 dB

MATTE TIN

e3

0 MHz

6000 MHz

935316208528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

14

PLASTIC/EPOXY

LDMOS

1

25 dBm

10

COMPONENT

50

50 ohm

150 Cel

30.5 dB

-55 Cel

Tin (Sn)

e3

1030 MHz

1090 MHz

935323877528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

26 dBm

10

COMPONENT

28

50 ohm

150 Cel

23 dB

-40 Cel

Tin (Sn)

e3

3400 MHz

3800 MHz

BGU7008,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

AEC-Q100

1

15.9 mA

1.8

SOLCC6,.04,20

RF/Microwave Amplifiers

125 Cel

-40 Cel

TIN

e3

BGA2012,115

NXP Semiconductors

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

150 Cel

14 dB

Tin (Sn)

e3

935318587147

NXP Semiconductors

WIDE BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

E-PHEMT

1

20 dBm

65 mA

COMPONENT

5

SOLCC8,.08,20

50 ohm

14.2 dB

Tin (Sn)

e3

1000 MHz

4000 MHz

935325969147

NXP Semiconductors

WIDE BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

HYBRID

1

30 dBm

415 mA

COMPONENT

5

LCC24,.16SQ,20

50 ohm

23.5 dB

Tin (Sn)

e3

1500 MHz

2700 MHz

BGU8062J

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

10

PLASTIC/EPOXY

IEC-60134

1

20 dBm

1.43

85 mA

COMPONENT

5

SOLCC10,.12SQ,20

50 ohm

NICKEL PALLADIUM GOLD

e4

1500 MHz

2700 MHz

BGU7044

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

IEC-60134

1

20 dBm

1.67

38 mA

COMPONENT

3.3

TSSOP6,.08

75 ohm

85 Cel

14 dB

-40 Cel

Tin (Sn)

e3

40 MHz

1000 MHz

MMG3005NT1

NXP Semiconductors

WIDE BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

BIPOLAR

1

18 dBm

520 mA

COMPONENT

5

LCC16(UNSPEC)

50 ohm

RF/Microwave Amplifiers

14 dB

800 MHz

2200 MHz

MMG3007NT1

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

55 mA

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

18 dB

Matte Tin (Sn)

e3

0 MHz

6000 MHz

BGU7003W,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

15 mA

2.5

SOLCC6,.04,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

TIN

e3

935373851528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

28 dBm

10

COMPONENT

28

50 ohm

150 Cel

26.5 dB

-40 Cel

3200 MHz

4000 MHz

BGA2011

NXP Semiconductors

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

20 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

15 dB

Tin (Sn)

e3

935337471147

NXP Semiconductors

NARROW BAND LOW POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

HYBRID

1

30 dBm

1.58

1200 mA

COMPONENT

5

LCC24,.16SQ,20

50 ohm

36.3 dB

Tin (Sn)

e3

3400 MHz

3800 MHz

MMG3013NT1

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

BIPOLAR

1

12 dBm

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

16 dB

MATTE TIN

e3

0 MHz

6000 MHz

BGA2771T/R

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

45 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

20.8 dB

Tin (Sn)

e3

1000 MHz

2000 MHz

BGA2716T/R

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

21 mA

5

TSSOP6,.08

RF/Microwave Amplifiers

Tin (Sn)

e3

BGU8051,118

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

20 dBm

1.07

60 mA

COMPONENT

5

SOLCC8,.08,20

50 ohm

85 Cel

17 dB

-40 Cel

300 MHz

1500 MHz

BGA2712,115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

15 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

16 dB

Tin (Sn)

e3

100 MHz

3000 MHz

BGU8053X

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

IEC-60134

1

20 dBm

1.08

85 mA

COMPONENT

5

SOLCC8,.08SQ,20

50 ohm

85 Cel

-40 Cel

2000 MHz

6000 MHz

BGU8011X,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

BICMOS

1

1.8/2.85

SOLCC6,.04,16

RF/Microwave Amplifiers

85 Cel

-40 Cel

CGY59

Infineon Technologies

WIDE BAND LOW POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

GAAS

COMPONENT

3/5

TSOP5/6,.11,37

RF/Microwave Amplifiers

Tin/Lead (Sn/Pb)

e0

200 MHz

2500 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.