SURFACE MOUNT RF & Microwave Amplifiers 2,305

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MHV5IC2215NR2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1	12 dBm	3		COMPONENT	28	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers		23 dB					1500 MHz	2200 MHz
MC13850EP	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BICMOS		1	10 dBm		12.5 mA	COMPONENT	2.7	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				400 MHz	2500 MHz
MHVIC2114NR2	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1	5 dBm	3		COMPONENT	27	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	150 Cel	29 dB					1600 MHz	2600 MHz
MC13851EPR2	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BICMOS		1	10 dBm		5.8 mA	COMPONENT	2.75	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14.5 dB	-30 Cel				1000 MHz	2500 MHz
MMG20271H9T1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	25 dBm		271 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		13.4 dB		MATTE TIN		e3	1500 MHz	2700 MHz
MHVIC910HNR2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1	5 dBm	10		COMPONENT	26	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	38 dB	-30 Cel				921 MHz	960 MHz
BGA2717,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	-10 dBm		10 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2031/1T/R	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			10 dBm	1.4		COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		23 dB					800 MHz	2500 MHz
MMG3004NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		275 mA	COMPONENT	5	LCC16(UNSPEC)	50 ohm	RF/Microwave Amplifiers		15 dB					400 MHz	2200 MHz
BGA2012	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			10 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	150 Cel	14 dB		Tin (Sn)		e3
BGA2714,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			5.7 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	0 MHz	2700 MHz
BGA2748,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	10 dBm		8 mA	COMPONENT	3	TSOP6,.08	50 ohm	RF/Microwave Amplifiers		18.5 dB		Tin (Sn)	LOW NOISE	e3	1000 MHz	2000 MHz
BGU7032,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1				COMPONENT	5	TSSOP6,.08		RF/Microwave Amplifiers	70 Cel		-10 Cel	TIN		e3		1000 MHz
BGU7003,132	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			15 mA		2.5	SOLCC6,.04,14		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin (Sn)		e3
935323765528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	LDMOS		1	25 dBm	10		COMPONENT	50		50 ohm		150 Cel	30.5 dB	-55 Cel	Tin (Sn)		e3	1030 MHz	1090 MHz
BGU8H1X	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	26 dBm	1.22	7 mA	COMPONENT	0.8/1.8		50 ohm		85 Cel	10.5 dB	-40 Cel				2300 MHz	2690 MHz
BGA2874,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			19 mA		2.5	TSSOP6,.08		RF/Microwave Amplifiers				TIN		e3
BGA2709	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		32 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2850,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			10.8 mA		5	TSSOP6,.08		RF/Microwave Amplifiers
MMG3003NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	15 dBm		205 mA	COMPONENT	6.2	TO-243	50 ohm	RF/Microwave Amplifiers		19.3 dB		Matte Tin (Sn)		e3	40 MHz	3600 MHz
BGU8062	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.43	85 mA	COMPONENT	5	SOLCC10,.12SQ,20	50 ohm								1500 MHz	2700 MHz
BGA2716,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		21 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		19 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2711	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		16 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		13.9 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
BGA2851,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1			7.8 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	23.7 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
BGA2803,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1			6.6 mA	COMPONENT	3.3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		21.2 dB		TIN	LOW NOISE	e3	0 MHz	2200 MHz
BGA2800,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			12.1 mA		3.3	TSSOP6,.08		RF/Microwave Amplifiers				TIN		e3
MW7IC2020NT1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	MOS		1	37 dBm	10		COMPONENT	28	LCC24,.3SQ,32	50 ohm	RF/Microwave Amplifiers		31 dB		TIN		e3	1805 MHz	2170 MHz
BGA2771	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		45 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20.8 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
BGU8H1	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	26 dBm	1.22	7 mA	COMPONENT	0.8/1.8		50 ohm		85 Cel	10.5 dB	-40 Cel				2300 MHz	2690 MHz
BGU7042,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			60 mA		3.3	TSSOP6,.08		RF/Microwave Amplifiers	70 Cel		-10 Cel	Tin (Sn)		e3
935305477118	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.43	85 mA	COMPONENT	5	SOLCC10,.12SQ,20	50 ohm					NICKEL PALLADIUM GOLD		e4	1500 MHz	2700 MHz
BGA2748	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	10 dBm		8 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18.5 dB		Tin (Sn)	LOW NOISE	e3	1000 MHz	2000 MHz
BGA2771,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		45 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20.8 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
935311653147	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS		1	23 dBm		104 mA	COMPONENT	5	TO-243	50 ohm			18.4 dB					450 MHz	3800 MHz
MMG3015NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	12 dBm		120 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		14 dB		Matte Tin (Sn)		e3	0 MHz	6000 MHz
BGU7045,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			38 mA		3.3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
935375787528	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	LDMOS		1	20 dBm	10		COMPONENT	48		50 ohm		150 Cel	35 dB	-40 Cel	Tin (Sn)		e3	575 MHz	960 MHz
BGA2776	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	10 dBm			COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	150 Cel	23.2 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
BGA2717	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	-10 dBm		10 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGU8L1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	26 dBm	1.22	6.6 mA	COMPONENT	0.8/1.8,2.8	SOLCC6,.03,16	50 ohm		85 Cel	12.5 dB	-40 Cel				728 MHz	960 MHz
935343962528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		2	20 dBm	10		COMPONENT	28		50 ohm		150 Cel	30.5 dB	-40 Cel	Tin (Sn)		e3	2400 MHz	3100 MHz
BGA2715	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		5.5 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Matte Tin (Sn)		e3	100 MHz	3000 MHz
BGU7031,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			60 mA		5	TSSOP6,.08		RF/Microwave Amplifiers	70 Cel		-10 Cel	TIN		e3
BGA2709,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		32 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2031/1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			23 dBm	3.5		COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		23 dB		Tin (Sn)		e3	800 MHz	2500 MHz
BGA2711,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		16 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		13.9 dB		Tin (Sn)		e3		3600 MHz
BGU8052	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	20 dBm		60 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm		85 Cel		-40 Cel				1500 MHz	2500 MHz
BGU8053	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.08	85 mA	COMPONENT	5	SOLCC8,.08SQ,20	50 ohm		85 Cel		-40 Cel				2000 MHz	6000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.