SURFACE MOUNT RF & Microwave Amplifiers 2,305

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGA6289	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	15 dBm		96 mA	COMPONENT	8	TO-243	50 ohm	RF/Microwave Amplifiers		12 dB		Tin (Sn)		e3	850 MHz	2500 MHz
934069005115	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.78	1.6 mA	COMPONENT	0.8,1.8/2.85	SOLCC6,.03,16	50 ohm		85 Cel	14.5 dB	-40 Cel	Tin (Sn)		e3	1559 MHz	1610 MHz
A2I20D040NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	18 dBm	10		COMPONENT	28		50 ohm		150 Cel	31.5 dB	-40 Cel	TIN		e3	1400 MHz	2200 MHz
A3I35D012WNR1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	17	PLASTIC/EPOXY			2	26 dBm			COMPONENT	28	FLNG,.72"H.SPACE	50 ohm		150 Cel	26.5 dB	-40 Cel				3200 MHz	4000 MHz
CGY2105ATS	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		2			144 mA	COMPONENT	+-5	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	14.6 dB	-40 Cel		LOW NOISE		1710 MHz	1910 MHz
BGU6009/N2	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.78	.002 mA	COMPONENT	1.8	SOLCC6,.03,16	50 ohm								1559 MHz	1610 MHz
A2I35H060GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	26 dBm	10		COMPONENT	28		50 ohm		150 Cel	23 dB	-40 Cel	TIN		e3	3400 MHz	3800 MHz
A3I35D012WGNR1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	17	PLASTIC/EPOXY			2	26 dBm			COMPONENT	28	FLNG,.72"H.SPACE	50 ohm		150 Cel	26.5 dB	-40 Cel				3200 MHz	4000 MHz
A2I09VD050NR1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	LDMOS		1	20 dBm	10		COMPONENT	48		50 ohm		150 Cel	35 dB	-40 Cel	TIN		e3	575 MHz	960 MHz
BGA3031X	NXP Semiconductors		SURFACE MOUNT	20	PLASTIC/EPOXY			1					5	LCC20,.20SQ,25		RF/Microwave Amplifiers				NICKEL PALLADIUM GOLD SILVER		e4
MRFIC1501R2	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS			3 dBm		7.5 mA	COMPONENT	5	SOP8,.25	50 ohm	RF/Microwave Amplifiers	100 Cel	17 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	1000 MHz	2000 MHz
MRFIC1856R2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS		2	15 dBm	10		COMPONENT	-4.4,4.8	TSSOP20,.25		RF/Microwave Amplifiers	85 Cel	29 dB	-35 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1850 TO 1910 MHZ	e0	824 MHz	849 MHz
MRFIC1819R2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	12 dBm	10		COMPONENT	3.6	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0	1700 MHz	1900 MHz
BGA7017,115	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY			1			100 mA		5	TO-243		RF/Microwave Amplifiers
AFSC5G37E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	29	LCC26,.24X.4,20	50 ohm		125 Cel	25.4 dB		NICKEL PALLADIUM GOLD		e4	3600 MHz	3800 MHz
A3M37TL039T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	26	LCC26,.24X.4,40	50 ohm		125 Cel	26.1 dB		NICKEL PALLADIUM GOLD	I/P POWER-MAX (PEAK)=25DBM	e4	3600 MHz	3800 MHz
CGY2014TT	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS		2	10 dBm		3000 mA	COMPONENT	3.5	TSSOP20,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-20 Cel		IT CAN ALSO OPERATE AT 1710 TO 1910 MHZ		880 MHz	915 MHz
BGA7014	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1			85 mA		5	TO-243		RF/Microwave Amplifiers
CGY2030M	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS			5 dBm			COMPONENT	3.3	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-30 Cel				1880 MHz	2000 MHz
CGY2021G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS			2 dBm			COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel	34 dB	-20 Cel		IT CAN ALSO OPERATE AT 1850 TO 1910 MHZ		1710 MHz	1785 MHz
BGY118C	NXP Semiconductors		SURFACE MOUNT	4	CERAMIC	HYBRID							4.8	SMSIP4,4GNDFLNG		RF/Microwave Amplifiers	100 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0
MRFIC1859R2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS		2	12 dBm	6		COMPONENT	3.6	TQFP32,.28SQ	50 ohm	RF/Microwave Amplifiers	100 Cel		-35 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ	e0	880 MHz	915 MHz
MRFIC1808	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS			3 dBm		5.5 mA	COMPONENT	3	SOP8,.25		RF/Microwave Amplifiers	85 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0	1700 MHz	2100 MHz
A3M34TL139T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	27	LCC26,.24X.4,20	50 ohm		125 Cel	25.6 dB			I/P POWER-MAX (PEAK)=25DBM		3300 MHz	3580 MHz
A2I35H060NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	26 dBm	10		COMPONENT	28		50 ohm		150 Cel	23 dB	-40 Cel	TIN		e3	3400 MHz	3800 MHz
MRFIC0919R2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	12 dBm	10		COMPONENT	3.6	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0	880 MHz	915 MHz
A3M35TL039T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	26	LCC26,.24X.4,40	50 ohm		125 Cel	26.5 dB			I/P POWER-MAX (PEAK)=25DBM		3300 MHz	3700 MHz
AFIC31025NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		2	20 dBm	10		COMPONENT	28		50 ohm		150 Cel	30.5 dB	-40 Cel	TIN		e3	2400 MHz	3100 MHz
BGM1011	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			32 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		28 dB		Tin (Sn)		e3
A3I35D025WNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	28 dBm	10		COMPONENT	28		50 ohm		150 Cel	26.5 dB	-40 Cel	TIN		e3	3200 MHz	4000 MHz
BLM7G1822S-40PBY	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			1					28	FL16(UNSPEC)		RF/Microwave Amplifiers
BGM1014,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		25 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	25 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	100 MHz	3000 MHz
BGA7024,135	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY			1			125 mA		5	TO-243		RF/Microwave Amplifiers				TIN		e3
BGY120B	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID			7 dBm	3	.1 mA	MODULE	3.6	SMSIP4	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				872 MHz	905 MHz
BGA6489	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	15 dBm		86 mA	COMPONENT	8	TO-243	50 ohm	RF/Microwave Amplifiers		15 dB		Tin (Sn)		e3	850 MHz	2500 MHz
SA5200D	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR			20 dBm		8.4 mA	COMPONENT	5	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				0 MHz	1200 MHz
CGY2011G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS			1.5 dBm			COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel		-20 Cel				880 MHz	915 MHz
BGA3031J	NXP Semiconductors		SURFACE MOUNT	20	PLASTIC/EPOXY			1					5	LCC20,.20SQ,25		RF/Microwave Amplifiers				NICKEL PALLADIUM GOLD SILVER		e4
BGA6589	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	15 dBm		89 mA	COMPONENT	9	TO-243	50 ohm	RF/Microwave Amplifiers		15 dB		Tin (Sn)		e3	850 MHz	2500 MHz
A3I35D025WGNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	28 dBm	10		COMPONENT	28		50 ohm		150 Cel	26.5 dB	-40 Cel				3200 MHz	4000 MHz
BGA7024,115	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY			1			125 mA		5	TO-243		RF/Microwave Amplifiers				TIN		e3
BLM7G1822S-40ABGY	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			2					28	SOP16(UNSPEC)		RF/Microwave Amplifiers
A3I20X050GNR3	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS		1	20 dBm			COMPONENT	2.15/28		50 ohm		150 Cel	28 dB	-40 Cel				1800 MHz	2200 MHz
A2I09VD050GNR1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	LDMOS		1	20 dBm	10		COMPONENT	48		50 ohm		150 Cel	35 dB	-40 Cel	TIN		e3	575 MHz	960 MHz
BLM6G22-30G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	LDMOS	IEC-60134	1		5		COMPONENT			50 ohm		200 Cel	27.5 dB		TIN			2100 MHz	2200 MHz
AFSC5G35E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	30	LCC26,.24X.4,40	50 ohm		125 Cel	29.3 dB		NICKEL PALLADIUM GOLD		e4	3400 MHz	3700 MHz
UAA3592HN	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR		1	0 dBm		50 mA	COMPONENT	2.7,3.6	LCC16,.16SQ,25		RF/Microwave Amplifiers	70 Cel		-30 Cel				1920 MHz	1980 MHz
UGY1088,118	NXP Semiconductors		SURFACE MOUNT	32	PLASTIC/EPOXY			1			300 mA		24	LCC32,.2SQ,20		RF/Microwave Amplifiers

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.