SURFACE MOUNT RF & Microwave Amplifiers 2,305

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
CGY2020G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS			2 dBm		1.3 mA	COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel	33 dB	-20 Cel				1710 MHz	1785 MHz
MRFIC0970	NXP Semiconductors		SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS		1					3.2	LCC20,.16SQ,20		RF/Microwave Amplifiers
BGS67A,112	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1			95 mA	COMPONENT	12	DILCC8,.46	75 ohm	RF/Microwave Amplifiers	100 Cel	25 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	65 MHz
MRFIC1869	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY			2				COMPONENT	3.6	LCC32,.2SQ,20		RF/Microwave Amplifiers	100 Cel		-35 Cel
MMM5062	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY			1	10 dBm	10		COMPONENT	1.8,2.8,3.5	DIE OR CHIP	50 ohm		100 Cel		-35 Cel				824 MHz	849 MHz
BGY148A	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID			13 dBm	3	.1 mA	MODULE	6	SMSIP4	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				400 MHz	440 MHz
MMG1001R2	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1			265 mA	COMPONENT	12/24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	870 MHz
BGY282	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	12	CERAMIC	HYBRID		2	10 dBm	3		COMPONENT	3.5	LCC12(UNSPEC)	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel		IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ		880 MHz	915 MHz
A3I20X050NR3	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS		1	20 dBm			COMPONENT	2.15/28		50 ohm		150 Cel	28 dB	-40 Cel				1800 MHz	2200 MHz
A3M40PD012T7	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1	25 dBm	1.38	300 mA	COMPONENT	3.3	LCC12,.08SQ,20	50 ohm		125 Cel	30 dB					2300 MHz	4200 MHz
AFSC5G23E37T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	28	LCC26,.24X.4,20	50 ohm		125 Cel	32 dB			I/P POWER-MAX (PEAK)=25DBM		2300 MHz	2400 MHz
MMM5063	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	GAAS		1	11 dBm	10		COMPONENT	1.8,32.8,3.5	DIE OR CHIP	50 ohm		100 Cel		-35 Cel				880 MHz	915 MHz
BGA7014,115	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY			1			85 mA		5	TO-243		RF/Microwave Amplifiers
BGY280	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY			2	10 dBm	3		COMPONENT	3.6	LCC16(UNSPEC)	50 ohm	RF/Microwave Amplifiers	100 Cel	33.5 dB	-30 Cel		IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ		880 MHz	915 MHz
BGS8H2	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	26 dBm	1.67	7.8 mA	COMPONENT	1.8,2.8	SOLCC6,.03,16	50 ohm		85 Cel	9.2 dB	-40 Cel				2300 MHz	2690 MHz
SA2410	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS						COMPONENT	3.3/5	QFP32,.35SQ,32	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-40 Cel				2400 MHz	2500 MHz
A3I20X050GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS		1	20 dBm			COMPONENT	2.15/28		50 ohm		150 Cel	28 dB	-40 Cel	TIN		e3	1800 MHz	2200 MHz
BTS6302UJ	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.67	120 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	33.8 dB	-40 Cel				2300 MHz	5000 MHz
MMG2401NR2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1				COMPONENT	3.3	LCC12,.12SQ,20		RF/Microwave Amplifiers	85 Cel	26 dB	-40 Cel	Matte Tin (Sn)		e3	2400 MHz	2500 MHz
MMG20271HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1			227 mA		5	LCC12,.12SQ,20		RF/Microwave Amplifiers				Matte Tin (Sn)		e3
MHVIC2115R2	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1		3	204 mA	COMPONENT	26	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	150 Cel	31 dB					1600 MHz	2600 MHz
MMH3111NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	20 dBm		190 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		10 dB		Matte Tin (Sn)		e3	250 MHz	4000 MHz
MHVIC915R2	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1		3		COMPONENT	27	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel				746 MHz	960 MHz
MMG2001NT1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1			440 mA	COMPONENT	24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	21 dB	-20 Cel				40 MHz	870 MHz
MMZ38333BT1	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID		1	30 dBm	1.58	1200 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm			36.3 dB		TIN		e3	3400 MHz	3800 MHz
935298613115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.08	85 mA	COMPONENT	5	SOLCC8,.08SQ,20	50 ohm		85 Cel		-40 Cel				2000 MHz	6000 MHz
MC13852EP	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BICMOS		1	10 dBm		6.5 mA	COMPONENT	2.75	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16.4 dB	-30 Cel				400 MHz	1000 MHz
MMRF2010NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	LDMOS		1	25 dBm	10		COMPONENT	50		50 ohm		150 Cel	30.5 dB	-55 Cel	TIN		e3	1030 MHz	1090 MHz
MML09212HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1			178 mA		5	SOLCC12,.12,20		RF/Microwave Amplifiers				MATTE TIN		e3
MMG2001T1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1			440 mA	COMPONENT	24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	21 dB	-20 Cel				40 MHz	870 MHz
MML20211HT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	22 dBm		60 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers		15 dB		TIN		e3	1400 MHz	2800 MHz
MBC13720NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS		1	10 dBm			COMPONENT	2.7	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel	12 dB	-30 Cel	TIN		e3	400 MHz	2400 MHz
MC13144D	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR					12 mA	COMPONENT	3	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	6 dB	-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0		2000 MHz
MHVIC915NR2	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1		3		COMPONENT	27	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel				746 MHz	960 MHz
MC13851EP	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BICMOS		1	10 dBm		5.8 mA	COMPONENT	2.75	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14.5 dB	-30 Cel				1000 MHz	2500 MHz
MML25231HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	E-PHEMT		1	20 dBm		65 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm			14.2 dB		TIN		e3	1000 MHz	4000 MHz
MMA20312BT1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR		1	14 dBm		77 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers		23.6 dB		Matte Tin (Sn)		e3	1800 MHz	2200 MHz
MML20242HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1			207 mA		5	LCC12,.12SQ,20		RF/Microwave Amplifiers				Matte Tin (Sn)		e3
MML09231HT1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1			70 mA		5	SOLCC8,.08,20		RF/Microwave Amplifiers				Tin (Sn)		e3
MHVIC2115NR2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1		3		COMPONENT	26	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers		31 dB					1600 MHz	2600 MHz
MHV5IC1810NR2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1	12 dBm	3		COMPONENT	28	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	150 Cel	26.5 dB			IT CAN ALSO OPERATE AT 1930 TO 1990 MHZ		1805 MHz	1990 MHz
MBC13917EP	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS		1	10 dBm		5.6 mA	COMPONENT	2.7	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel				100 MHz	2500 MHz
MMA20312BVT1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR		1	14 dBm		77 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers		23.6 dB		MATTE TIN		e3	1800 MHz	2200 MHz
MML09211HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1	20 dBm		90 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers		19 dB		Matte Tin (Sn)		e3	400 MHz	1400 MHz
MHVIC2114R2	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1	5 dBm	3		COMPONENT	27	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	150 Cel	29 dB					1600 MHz	2600 MHz
GPS1502LX	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	15 dBm	1.92	6.4 mA	COMPONENT	0.8/1.8,2.8	SOLCC6,.03,16	50 ohm			15.6 dB					1164 MHz	1299 MHz
MHVIC910HR2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1	5 dBm	10	150 mA	COMPONENT	26	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	38 dB	-30 Cel				921 MHz	960 MHz
MMZ27333BT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID		1	10 dBm	1.55		COMPONENT	5	LCC24,.16SQ,20	50 ohm			34.8 dB		TIN		e3	1500 MHz	2700 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.