Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
36 mA |
COMPONENT |
5 |
TSSOP8,.16 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
25 dB |
-40 Cel |
||||||||||||
Toshiba |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
14 mA |
COMPONENT |
2 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||
Toshiba |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
350 mA |
6 |
FL6,.4,100 |
RF/Microwave Amplifiers |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||||
Toshiba |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
5 |
CERAMIC |
HYBRID |
12.3 dBm |
20 |
MODULE |
6 |
LCC5(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-35 Cel |
Tin/Lead (Sn/Pb) |
e0 |
824 MHz |
849 MHz |
|||||||||
Toshiba |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
GAAS |
12 dBm |
3 |
390 mA |
COMPONENT |
5.5,5.8 |
SMSIP5/6H,.5 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
824 MHz |
849 MHz |
||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
BIPOLAR |
4.5 mA |
COMPONENT |
2 |
TSOP5/6,.11,37 |
RF/Microwave Amplifiers |
85 Cel |
13 dB |
-40 Cel |
700 MHz |
|||||||||||||
Toshiba |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
10 dBm |
20 |
150 mA |
COMPONENT |
3 |
TSSOP8,.16 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
21 dB |
-40 Cel |
1895 MHz |
1918 MHz |
|||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
BIPOLAR |
4.5 mA |
COMPONENT |
2 |
TSOP5/6,.11,37 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||
Toshiba |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
HYBRID |
12.3 dBm |
20 |
MODULE |
6 |
LCC5(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-35 Cel |
Tin/Lead (Sn/Pb) |
e0 |
872 MHz |
905 MHz |
|||||||||
Toshiba |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1400 mA |
9 |
FL6,.4,100 |
RF/Microwave Amplifiers |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
2 |
25 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
700 MHz |
|||||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
7 mA |
COMPONENT |
3 |
SOT-143R |
RF/Microwave Amplifiers |
85 Cel |
8.5 dB |
-40 Cel |
1500 MHz |
2600 MHz |
||||||||||
Toshiba |
SURFACE MOUNT |
6 |
CERAMIC |
1 |
1000 mA |
6 |
SOLCC6,.12,47 |
RF/Microwave Amplifiers |
85 Cel |
-20 Cel |
|||||||||||||||||
Toshiba |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
180 mA |
-1.3,3 |
TSSOP8,.16 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||
Toshiba |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
BIPOLAR |
15 mA |
5 |
TSOP5/6,.11,37 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
42 mA |
COMPONENT |
5 |
TSSOP8,.16 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-40 Cel |
||||||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
4.5 mA |
COMPONENT |
2 |
TSSOP6,.06,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
||||||||||||
Toshiba |
SURFACE MOUNT |
6 |
CERAMIC |
1 |
440 mA |
3.5 |
DILCC6,.25,67 |
RF/Microwave Amplifiers |
85 Cel |
-20 Cel |
|||||||||||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
4.5 mA |
2 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||
Toshiba |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
400 mA |
COMPONENT |
6 |
FL8,.32FL |
50 ohm |
RF/Microwave Amplifiers |
80 Cel |
19 dB |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||
Toshiba |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
150 mA |
3 |
TSSOP8,.16 |
RF/Microwave Amplifiers |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||
Toshiba |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
4.5 mA |
2 |
TSSOP6,.06,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||||
Toshiba |
NARROW BAND LOW POWER |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
BIPOLAR |
14 mA |
COMPONENT |
2 |
TSOP5/6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||
Toshiba |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
18 |
HYBRID |
1 |
6 dBm |
3 |
1500 mA |
COMPONENT |
4.5 |
LCC18,.1X.14,20 |
85 Cel |
24 dB |
-30 Cel |
1750 MHz |
1910 MHz |
|||||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
15 mA |
COMPONENT |
5 |
TSOP6,.11,37 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
LOW NOISE |
||||||||||||||
Toshiba |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
20 mA |
5 |
SOT-143R |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||||
Toshiba |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
8.5 mA |
COMPONENT |
2 |
TSSOP6,.06,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
||||||||||||
|
Renesas Electronics |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
21 dBm |
2 |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
115 Cel |
27.9 dB |
-40 Cel |
Tin (Sn) |
e3 |
1800 MHz |
5000 MHz |
||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
24 mA |
5 |
SOT-143R |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||
|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
23 |
PLASTIC/EPOXY |
2 |
0 dBm |
2 |
COMPONENT |
0.95 |
BGA23,5X5,20 |
50 ohm |
85 Cel |
19.5 dB |
-40 Cel |
TIN |
e3 |
14000 MHz |
17000 MHz |
||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
24 mA |
5 |
SL,8LEAD,.15SQ |
RF/Microwave Amplifiers |
125 Cel |
-55 Cel |
|||||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
8 |
CERAMIC |
GAAS |
60 mA |
+-5 |
QFL8,.15SQ |
RF/Microwave Amplifiers |
125 Cel |
-65 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||
|
Renesas Electronics |
NARROW BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
8 mA |
COMPONENT |
3 |
FL8,.09,20 |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-40 Cel |
|||||||||||
|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
32 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
22 dB |
-40 Cel |
Tin/Bismuth (Sn/Bi) |
e6 |
||||||||
Renesas Electronics |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
33 mA |
5 |
TSOP6,.11,37 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
CERAMIC |
GAAS |
15 dBm |
143 mA |
COMPONENT |
8,-5 |
QFL8,.15SQ |
50 ohm |
RF/Microwave Amplifiers |
80 Cel |
12 dB |
-50 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
50 MHz |
3000 MHz |
|||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
10 dBm |
60 mA |
COMPONENT |
5 |
SSOP8,.2 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
21 dB |
-45 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
2000 MHz |
||||||||
|
Renesas Electronics |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
1 |
18 dBm |
2 |
120 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
105 Cel |
16.4 dB |
-40 Cel |
TIN |
HIGH RELIABILITY |
e3 |
700 MHz |
1100 MHz |
||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
1 |
20 dBm |
1 |
76 mA |
COMPONENT |
3.3/5 |
LCC12,.08SQ,20 |
100 ohm |
115 Cel |
17 dB |
-40 Cel |
TIN |
LOW NOISE |
e3 |
3000 MHz |
4200 MHz |
||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
38 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
HIGH RELIABILITY |
900 MHz |
2900 MHz |
||||||||
Renesas Electronics |
SURFACE MOUNT |
4 |
CERAMIC |
GAAS |
180 mA |
8 |
SL,4LEAD,.18SQ |
RF/Microwave Amplifiers |
|||||||||||||||||||
Renesas Electronics |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 mA |
3 |
TSOP6,.11,37 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Renesas Electronics |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
45 mA |
3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
10 dBm |
15 mA |
COMPONENT |
5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
2600 MHz |
|||||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
0 dBm |
15 mA |
COMPONENT |
5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
400 MHz |
1600 MHz |
|||||||
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
10 dBm |
32 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
22 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
HIGH RELIABILITY |
e0 |
2300 MHz |
||||||||
|
Renesas Electronics |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
2 |
20 dBm |
2 |
COMPONENT |
5 |
LCC16,.16SQ,25 |
50 ohm |
105 Cel |
16 dB |
-40 Cel |
TIN |
LOW NOISE |
e3 |
650 MHz |
1000 MHz |
|||||||
|
Renesas Electronics |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
15 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
30 dB |
-40 Cel |
Tin/Bismuth (Sn/Bi) |
HIGH RELIABILITY |
e6 |
1000 MHz |
2900 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.