SURFACE MOUNT RF & Microwave Amplifiers 2,305

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

TA4023F

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

1

36 mA

COMPONENT

5

TSSOP8,.16

50 ohm

RF/Microwave Amplifiers

85 Cel

25 dB

-40 Cel

TA4013FU

Toshiba

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

14 mA

COMPONENT

2

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

12 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

S9747

Toshiba

NARROW BAND MEDIUM POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

350 mA

6

FL6,.4,100

RF/Microwave Amplifiers

Tin/Lead (Sn/Pb)

e0

S-AU76

Toshiba

NARROW BAND MEDIUM POWER

SURFACE MOUNT

5

CERAMIC

HYBRID

12.3 dBm

20

MODULE

6

LCC5(UNSPEC)

50 ohm

RF/Microwave Amplifiers

100 Cel

-35 Cel

Tin/Lead (Sn/Pb)

e0

824 MHz

849 MHz

S-AU55

Toshiba

NARROW BAND MEDIUM POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

GAAS

12 dBm

3

390 mA

COMPONENT

5.5,5.8

SMSIP5/6H,.5

50 ohm

RF/Microwave Amplifiers

100 Cel

-30 Cel

Tin/Lead (Sn/Pb)

e0

824 MHz

849 MHz

TA4004F

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

BIPOLAR

4.5 mA

COMPONENT

2

TSOP5/6,.11,37

RF/Microwave Amplifiers

85 Cel

13 dB

-40 Cel

700 MHz

TG2006F

Toshiba

NARROW BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

10 dBm

20

150 mA

COMPONENT

3

TSSOP8,.16

50 ohm

RF/Microwave Amplifiers

85 Cel

21 dB

-40 Cel

1895 MHz

1918 MHz

TA4003F

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

BIPOLAR

4.5 mA

COMPONENT

2

TSOP5/6,.11,37

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

S-AU77

Toshiba

NARROW BAND MEDIUM POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

HYBRID

12.3 dBm

20

MODULE

6

LCC5(UNSPEC)

50 ohm

RF/Microwave Amplifiers

100 Cel

-35 Cel

Tin/Lead (Sn/Pb)

e0

872 MHz

905 MHz

S9751

Toshiba

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1400 mA

9

FL6,.4,100

RF/Microwave Amplifiers

Tin/Lead (Sn/Pb)

e0

TA4017FT

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

2

25 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

10 dB

-40 Cel

700 MHz

TA4020FT

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

7 mA

COMPONENT

3

SOT-143R

RF/Microwave Amplifiers

85 Cel

8.5 dB

-40 Cel

1500 MHz

2600 MHz

S-AU87

Toshiba

SURFACE MOUNT

6

CERAMIC

1

1000 mA

6

SOLCC6,.12,47

RF/Microwave Amplifiers

85 Cel

-20 Cel

TG2005F

Toshiba

NARROW BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

1

180 mA

-1.3,3

TSSOP8,.16

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

TA4000F(TE85L)

Toshiba

SURFACE MOUNT

5

PLASTIC/EPOXY

BIPOLAR

15 mA

5

TSOP5/6,.11,37

RF/Microwave Amplifiers

85 Cel

-40 Cel

TA4022F

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

1

42 mA

COMPONENT

5

TSSOP8,.16

50 ohm

RF/Microwave Amplifiers

85 Cel

16 dB

-40 Cel

TA4011AFE

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

4.5 mA

COMPONENT

2

TSSOP6,.06,20

50 ohm

RF/Microwave Amplifiers

85 Cel

8 dB

-40 Cel

S-AU84

Toshiba

SURFACE MOUNT

6

CERAMIC

1

440 mA

3.5

DILCC6,.25,67

RF/Microwave Amplifiers

85 Cel

-20 Cel

TA4011FU

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

4.5 mA

2

TSSOP6,.08

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

S9750

Toshiba

WIDE BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

13 dBm

400 mA

COMPONENT

6

FL8,.32FL

50 ohm

RF/Microwave Amplifiers

80 Cel

19 dB

-30 Cel

Tin/Lead (Sn/Pb)

e0

TG2006FTE12L

Toshiba

SURFACE MOUNT

8

PLASTIC/EPOXY

GAAS

150 mA

3

TSSOP8,.16

RF/Microwave Amplifiers

Tin/Lead (Sn/Pb)

e0

TA4011AFE(TE85L)

Toshiba

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

4.5 mA

2

TSSOP6,.06,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

TA4013F

Toshiba

NARROW BAND LOW POWER

SURFACE MOUNT

5

PLASTIC/EPOXY

BIPOLAR

14 mA

COMPONENT

2

TSOP5/6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

12 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

TG2014CS

Toshiba

NARROW BAND MEDIUM POWER

SURFACE MOUNT

18

HYBRID

1

6 dBm

3

1500 mA

COMPONENT

4.5

LCC18,.1X.14,20

85 Cel

24 dB

-30 Cel

1750 MHz

1910 MHz

TA4000F

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

15 mA

COMPONENT

5

TSOP6,.11,37

RF/Microwave Amplifiers

85 Cel

-40 Cel

LOW NOISE

TA4002F(TE85L)

Toshiba

SURFACE MOUNT

4

PLASTIC/EPOXY

BIPOLAR

20 mA

5

SOT-143R

RF/Microwave Amplifiers

85 Cel

-40 Cel

TA4012AFE

Toshiba

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

8.5 mA

COMPONENT

2

TSSOP6,.06,20

50 ohm

RF/Microwave Amplifiers

85 Cel

10 dB

-40 Cel

F1478NLGA8

Renesas Electronics

WIDE BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

1

21 dBm

2

COMPONENT

5

LCC16,.12SQ,20

50 ohm

115 Cel

27.9 dB

-40 Cel

Tin (Sn)

e3

1800 MHz

5000 MHz

UPC1688G-T1

Renesas Electronics

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

BIPOLAR

1

24 mA

5

SOT-143R

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

F6923AVRI8

Renesas Electronics

WIDE BAND LOW POWER

SURFACE MOUNT

23

PLASTIC/EPOXY

2

0 dBm

2

COMPONENT

0.95

BGA23,5X5,20

50 ohm

85 Cel

19.5 dB

-40 Cel

TIN

e3

14000 MHz

17000 MHz

UPC1676B

Renesas Electronics

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

24 mA

5

SL,8LEAD,.15SQ

RF/Microwave Amplifiers

125 Cel

-55 Cel

UPG100A

Renesas Electronics

SURFACE MOUNT

8

CERAMIC

GAAS

60 mA

+-5

QFL8,.15SQ

RF/Microwave Amplifiers

125 Cel

-65 Cel

Tin/Lead (Sn/Pb)

e0

UPC8230TU-E2-A

Renesas Electronics

NARROW BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

8 mA

COMPONENT

3

FL8,.09,20

RF/Microwave Amplifiers

85 Cel

16 dB

-40 Cel

UPC2709TB-E3-A

Renesas Electronics

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

32 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

22 dB

-40 Cel

Tin/Bismuth (Sn/Bi)

e6

UPC2708T-E3

Renesas Electronics

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

33 mA

5

TSOP6,.11,37

RF/Microwave Amplifiers

85 Cel

-40 Cel

Tin/Lead (Sn/Pb)

e0

UPG101B

Renesas Electronics

WIDE BAND LOW POWER

SURFACE MOUNT

8

CERAMIC

GAAS

15 dBm

143 mA

COMPONENT

8,-5

QFL8,.15SQ

50 ohm

RF/Microwave Amplifiers

80 Cel

12 dB

-50 Cel

Tin/Lead (Sn/Pb)

HIGH RELIABILITY

e0

50 MHz

3000 MHz

UPC1678GV-E1

Renesas Electronics

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

10 dBm

60 mA

COMPONENT

5

SSOP8,.2

50 ohm

RF/Microwave Amplifiers

85 Cel

21 dB

-45 Cel

Tin/Lead (Sn/Pb)

HIGH RELIABILITY

e0

2000 MHz

F1420NLGK8

Renesas Electronics

NARROW BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

1

18 dBm

2

120 mA

COMPONENT

5

LCC24,.16SQ,20

50 ohm

105 Cel

16.4 dB

-40 Cel

TIN

HIGH RELIABILITY

e3

700 MHz

1100 MHz

F1129MBNELI8

Renesas Electronics

WIDE BAND LOW POWER

SURFACE MOUNT

12

1

20 dBm

1

76 mA

COMPONENT

3.3/5

LCC12,.08SQ,20

100 ohm

115 Cel

17 dB

-40 Cel

TIN

LOW NOISE

e3

3000 MHz

4200 MHz

UPC8182TB

Renesas Electronics

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

38 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

18 dB

-40 Cel

HIGH RELIABILITY

900 MHz

2900 MHz

UPG110B

Renesas Electronics

SURFACE MOUNT

4

CERAMIC

GAAS

180 mA

8

SL,4LEAD,.18SQ

RF/Microwave Amplifiers

UPC2745T

Renesas Electronics

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 mA

3

TSOP6,.11,37

RF/Microwave Amplifiers

85 Cel

-40 Cel

UPC2771TB-E3-A

Renesas Electronics

SURFACE MOUNT

6

PLASTIC/EPOXY

1

45 mA

3

TSSOP6,.08

RF/Microwave Amplifiers

85 Cel

-40 Cel

UPC2712T-E3

Renesas Electronics

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

10 dBm

15 mA

COMPONENT

5

TSOP6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

18 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

2600 MHz

UPC2726T-E3

Renesas Electronics

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

0 dBm

15 mA

COMPONENT

5

TSOP6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

11 dB

-40 Cel

Tin/Lead (Sn/Pb)

HIGH RELIABILITY

e0

400 MHz

1600 MHz

UPC2709TB

Renesas Electronics

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

10 dBm

32 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

22 dB

-40 Cel

Tin/Lead (Sn/Pb)

HIGH RELIABILITY

e0

2300 MHz

F0109NBTI8

Renesas Electronics

WIDE BAND MEDIUM POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

2

20 dBm

2

COMPONENT

5

LCC16,.16SQ,25

50 ohm

105 Cel

16 dB

-40 Cel

TIN

LOW NOISE

e3

650 MHz

1000 MHz

UPC2711TB-E3-A

Renesas Electronics

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

15 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

30 dB

-40 Cel

Tin/Bismuth (Sn/Bi)

HIGH RELIABILITY

e6

1000 MHz

2900 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.