NARROW BAND LOW POWER RF & Microwave Amplifiers 599

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGU7005,115	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	0 dBm			COMPONENT	1.8	SOLCC6,.04,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel	TIN		e3	1559 MHz	1610 MHz
BGA824N6E6327XTSA1	Infineon Technologies	NARROW BAND LOW POWER							0 dBm			COMPONENT			50 ohm		85 Cel	17 dB	-40 Cel	TIN		e3	1550 MHz	1615 MHz
BGA715N7E6327XTSA2	Infineon Technologies	NARROW BAND LOW POWER							10 dBm			COMPONENT			50 ohm		85 Cel	20 dB	-40 Cel	TIN	LOW NOISE	e3	1550 MHz	1615 MHz
HMC505LP4E	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR		1		2		COMPONENT	3	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	MATTE TIN	LOW NOISE	e3	6800 MHz	7400 MHz
CC2590RGVR	Texas Instruments	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY			1	10 dBm			COMPONENT	3				85 Cel	14.1 dB	-40 Cel	NICKEL PALLADIUM GOLD	LOW NOISE	e4	2400 MHz	2483.5 MHz
BGU8019X	NXP Semiconductors	NARROW BAND LOW POWER							10 dBm			COMPONENT			50 ohm		85 Cel	16 dB	-40 Cel		IEC-60134		1559 MHz	1610 MHz
HMC505LP4ETR	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR		1					3	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	MATTE TIN		e3
BGU8103X	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.78	1.6 mA	COMPONENT	0.8,1.8/2.85	SOLCC6,.03,16	50 ohm		85 Cel	14.5 dB	-40 Cel	TIN		e3	1559 MHz	1610 MHz
SKY65624-682LF	Skyworks Solutions	NARROW BAND LOW POWER	SURFACE MOUNT	4		BICMOS		1	0 dBm	1.5	5 mA	COMPONENT	1.8/2.8		50 ohm		85 Cel	16 dB	-40 Cel				1559 MHz	1606 MHz
HMC506LP4E	Analog Devices	NARROW BAND LOW POWER								2		COMPONENT			50 ohm		85 Cel		-40 Cel	MATTE TIN	LOW NOISE	e3	7800 MHz	8700 MHz
CC2590RGVRG4	Texas Instruments	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY			1	10 dBm			COMPONENT	3				85 Cel	14.1 dB	-40 Cel	NICKEL PALLADIUM GOLD	LOW NOISE	e4	2400 MHz	2483.5 MHz
HMC505LP4	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR		1		2		COMPONENT	3	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN LEAD	LOW NOISE	e0	6800 MHz	7400 MHz
HMC505LP4TR	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR		1					3	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC506LP4TR	Analog Devices	NARROW BAND LOW POWER
HMC287MS8ETR	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		1			15 mA		3	TSSOP8,.19		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC716LP3E	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	10 dBm	1.38	90 mA	COMPONENT	3/5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel	MATTE TIN OVER NICKEL		e3	3100 MHz	3900 MHz
HMC491LP3E	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	30 dBm			COMPONENT	3	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	13 dB	-40 Cel	MATTE TIN		e3	3400 MHz	3800 MHz
MAX2659ELT/V+	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS	AEC-Q100	1	10 dBm		5.6 mA	COMPONENT	1.8/3	SOLCC6,.04,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16.5 dB	-40 Cel
MAX2244EBL-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	9	PLASTIC/EPOXY	BIPOLAR		1	10 dBm	6	205 mA	COMPONENT	3	BGA9,3X3,20	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn63Pb37)		e0	2400 MHz	2500 MHz
BGU6005/N2X	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.43		COMPONENT	1.8/2.85	SOLCC6,.04,20	50 ohm		150 Cel	17.5 dB					1559 MHz	1610 MHz
BGU8009	NXP Semiconductors	NARROW BAND LOW POWER							10 dBm			COMPONENT			50 ohm		85 Cel	17.6 dB	-40 Cel	Pure Tin (Sn)			1559 MHz	1610 MHz
BGU8103	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.78	1.6 mA	COMPONENT	0.8,1.8/2.85	SOLCC6,.03,16	50 ohm		85 Cel	14.5 dB	-40 Cel				1559 MHz	1610 MHz
HMC429LP4E	Analog Devices	NARROW BAND LOW POWER								2		COMPONENT			50 ohm		85 Cel		-40 Cel	MATTE TIN	LOW NOISE	e3	4450 MHz	5000 MHz
MAX2839ETN+	Maxim Integrated	NARROW BAND LOW POWER																		MATTE TIN		e3
MAX2839ETN+T	Maxim Integrated	NARROW BAND LOW POWER																		MATTE TIN		e3
MAX2839ETN+TD	Maxim Integrated	NARROW BAND LOW POWER							15 dBm			COMPONENT			50 ohm		85 Cel		-40 Cel		LOW NOISE		2300 MHz	2700 MHz
SKY65981-11	Skyworks Solutions	NARROW BAND LOW POWER
ZX60-2411BM-S+	Mini-circuits	NARROW BAND LOW POWER							16 dBm	1.65		COAXIAL			50 ohm		80 Cel	9 dB	-40 Cel				1900 MHz	2400 MHz
ZX60-2411BM-S	Mini-circuits	NARROW BAND LOW POWER							16 dBm	1.65		COAXIAL			50 ohm		80 Cel	9 dB	-40 Cel	TIN LEAD		e0	1900 MHz	2400 MHz
AMF-4F-02200230-15-13P	L-3 Narda-miteq	NARROW BAND LOW POWER								1.5		COAXIAL						58 dB			SMA-F		2200 MHz	2300 MHz
BGA231N7E6330XTSA1	Infineon Technologies	NARROW BAND LOW POWER							0 dBm			COMPONENT			50 ohm		85 Cel	16 dB	-40 Cel				1550 MHz	1615 MHz
CC2590RGVTG4	Texas Instruments	NARROW BAND LOW POWER							10 dBm			COMPONENT					85 Cel	14.1 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	LOW NOISE	e4	2400 MHz	2483.5 MHz
HMC506LP4ETR	Analog Devices	NARROW BAND LOW POWER																		MATTE TIN		e3
MAX2373ETC+T	Analog Devices	NARROW BAND LOW POWER																		Matte Tin (Sn) - annealed		e3
NJG1150UA2-TE1	New Japan Radio	NARROW BAND LOW POWER
QPL6207QTR7	Qorvo	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	E-PHEMT	AEC-Q100	1	30 dBm	2.2	68 mA	COMPONENT	4.5	SOLCC8,.08,20	50 ohm		105 Cel	18.1 dB	-40 Cel				2320 MHz	2345 MHz
HMC388LP4TR	Analog Devices	NARROW BAND LOW POWER								2		COMPONENT			50 ohm		85 Cel		-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	3150 MHz	3400 MHz
HMC618LP3ETR	Hittite Microwave	NARROW BAND LOW POWER
HMC716LP3ETR	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	10 dBm	1.38	90 mA	COMPONENT	3/5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15.5 dB	-40 Cel	MATTE TIN		e3	3100 MHz	3900 MHz
BGA231N7E6327XTSA2	Infineon Technologies	NARROW BAND LOW POWER							0 dBm			COMPONENT			50 ohm		85 Cel	16 dB	-40 Cel	Tin (Sn)		e3	1550 MHz	1615 MHz
BGU7005	NXP Semiconductors	NARROW BAND LOW POWER										COMPONENT			50 ohm		85 Cel	14 dB	-40 Cel	TIN	LOW NOISE	e3	1713 MHz	1851 MHz
BGU7005/Z/N2115	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	0 dBm	1.22	14.4 mA	COMPONENT	1.8	SOLCC6,.04,20	50 ohm		85 Cel	14 dB	-40 Cel				1559 MHz	1610 MHz
HMC391LP4E	Analog Devices	NARROW BAND LOW POWER								2		COMPONENT			50 ohm		85 Cel		-40 Cel	MATTE TIN	LOW NOISE	e3	3900 MHz	4450 MHz
MGA-68563-TR1G	Broadcom	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS		1	21 dBm		16 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Tin (Sn)		e3
SKY67100-396LF	Skyworks Solutions	NARROW BAND LOW POWER							20 dBm			COMPONENT			50 ohm		85 Cel	16.1 dB	-40 Cel				1200 MHz	3000 MHz
SKY67107-306LF	Skyworks Solutions	NARROW BAND LOW POWER							15 dBm			COMPONENT					85 Cel	29 dB	-40 Cel				2300 MHz	2800 MHz
FMM5010VF	Fujitsu	NARROW BAND LOW POWER			CERAMIC	GAAS			5 dBm	2.3		COMPONENT	10,-5	FLNG,.53"H.SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	22 dB	-40 Cel		HIGH RELIABILITY		14000 MHz	14500 MHz
SKY65605-21	Skyworks Solutions	NARROW BAND LOW POWER	SURFACE MOUNT	6		BICMOS		1	10 dBm	1.92	4.5 mA	COMPONENT	1.8/2.85	SOLCC6,.03,16	50 ohm		85 Cel	17 dB	-40 Cel				1559 MHz	1606 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.