NARROW BAND LOW POWER RF & Microwave Amplifiers 599

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

BGA428E6327HTSA1

Infineon Technologies

NARROW BAND LOW POWER

8 dBm

COMPONENT

50 ohm

85 Cel

20 dB

-40 Cel

BGA428

Infineon Technologies

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

8 dBm

COMPONENT

2.7

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

20 dB

-40 Cel

BGA715L7E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

10 dBm

COMPONENT

50 ohm

85 Cel

20 dB

-40 Cel

LOW NOISE

BGA925L6

Infineon Technologies

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

0 dBm

COMPONENT

1.8

SOLCC6,.03,16

50 ohm

RF/Microwave Amplifiers

85 Cel

15.8 dB

-40 Cel

1550 MHz

1615 MHz

BGA725L6

Infineon Technologies

NARROW BAND LOW POWER

GOLD

e4

BGA748L16E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

4 dBm

COMPONENT

50 ohm

85 Cel

16.8 dB

-30 Cel

Gold (Au)

LOW NOISE, IT CAN ALSO OPERATE AT 925-960 MHZ,1930-1990 MHZ AND 2110-2170 MHZ

e4

869 MHz

894 MHz

BGA748L16

Infineon Technologies

NARROW BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

4

4 dBm

.002 mA

COMPONENT

2.8

LCC16,.10SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

16.8 dB

-30 Cel

LOW NOISE, IT CAN ALSO OPERATE AT 925-960 MHZ,1930-1990 MHZ AND 2110-2170 MHZ

869 MHz

894 MHz

BGA420E6327HTSA1

Infineon Technologies

NARROW BAND LOW POWER

0 dBm

COMPONENT

50 ohm

150 Cel

11 dB

-65 Cel

MATTE TIN

e3

100 MHz

1800 MHz

PTH32001

Infineon Technologies

NARROW BAND LOW POWER

5

MODULE

50 ohm

85 Cel

23 dB

-20 Cel

1930 MHz

1990 MHz

BGB717L7ESDE6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

COMPONENT

50 ohm

10 dB

76 MHz

108 MHz

BGB717L7ESDE6433XT

Infineon Technologies

NARROW BAND LOW POWER

COMPONENT

50 ohm

10 dB

76 MHz

108 MHz

BGA125N6

Infineon Technologies

NARROW BAND LOW POWER

BGA751L7

Infineon Technologies

NARROW BAND LOW POWER

4 dBm

COMPONENT

50 ohm

85 Cel

15.8 dB

-30 Cel

LOW NOISE

875 MHz

885 MHz

BGA748N16E6327

Infineon Technologies

NARROW BAND LOW POWER

4 dBm

COMPONENT

50 ohm

85 Cel

18 dB

-30 Cel

LOW NOISE, IT CAN ALSO OPERATE AT 925-960 MHZ,1930-1990 MHZ AND 2110-2170 MHZ

2110 MHz

2170 MHz

BGA420E6327

Infineon Technologies

NARROW BAND LOW POWER

PLASTIC/EPOXY

BIPOLAR

1

0 dBm

8 mA

COMPONENT

3

SOT-343R

50 ohm

RF/Microwave Amplifiers

150 Cel

11 dB

-65 Cel

Matte Tin (Sn)

e3

100 MHz

1800 MHz

BGA736L16

Infineon Technologies

NARROW BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

3

4 dBm

COMPONENT

2.8

LCC16,.10SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

3 dB

-30 Cel

LOW NOISE

869 MHz

894 MHz

BGA925L6E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

0 dBm

COMPONENT

50 ohm

85 Cel

15.8 dB

-40 Cel

Gold (Au)

e4

1550 MHz

1615 MHz

BGA915N7

Infineon Technologies

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

0 dBm

5.7 mA

COMPONENT

2.8

SOLCC6,.06,20

50 ohm

RF/Microwave Amplifiers

85 Cel

14.3 dB

-40 Cel

1550 MHz

1615 MHz

BGA524N6

Infineon Technologies

NARROW BAND LOW POWER

TIN

e3

BGA715N7

Infineon Technologies

NARROW BAND LOW POWER

TIN

e3

PMB2362V1.1

Infineon Technologies

NARROW BAND LOW POWER

SURFACE MOUNT

10

PLASTIC/EPOXY

BIPOLAR

1.5

COMPONENT

3/3.3

TSSOP10,.19,20

50 ohm

RF/Microwave Amplifiers

85 Cel

16 dB

-40 Cel

Tin/Lead (Sn/Pb)

IT CAN ALSO OPERATE AT 1805 TO 1880 MHZ

e0

925 MHz

960 MHz

BGA428H6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

8 dBm

COMPONENT

50 ohm

85 Cel

20 dB

-40 Cel

BGC405

Infineon Technologies

NARROW BAND LOW POWER

COMPONENT

50 ohm

150 Cel

16.5 dB

-65 Cel

900 MHz

1800 MHz

CGB240

Infineon Technologies

NARROW BAND LOW POWER

SURFACE MOUNT

10

PLASTIC/EPOXY

GAAS

1

10 dBm

6

150 mA

COMPONENT

2/6

TSSOP10,.19,20

50 ohm

RF/Microwave Amplifiers

23 dB

2400 MHz

2500 MHz

BGA736L16E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

4 dBm

COMPONENT

50 ohm

85 Cel

3 dB

-30 Cel

LOW NOISE

869 MHz

894 MHz

BGA425E6327

Infineon Technologies

NARROW BAND LOW POWER

-10 dBm

COMPONENT

50 ohm

150 Cel

18.5 dB

-65 Cel

100 MHz

1800 MHz

BGA715N7E6330XTSA1

Infineon Technologies

NARROW BAND LOW POWER

BGA9C1MN9

Infineon Technologies

NARROW BAND LOW POWER

CGY94E6327

Infineon Technologies

NARROW BAND LOW POWER

2

COMPONENT

50 ohm

27 dB

BGB717L7ESD

Infineon Technologies

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

3.6 mA

COMPONENT

3

SOLCC6,.08,20

50 ohm

RF/Microwave Amplifiers

10 dB

76 MHz

108 MHz

BGA751L7E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

4 dBm

COMPONENT

50 ohm

85 Cel

15.8 dB

-30 Cel

LOW NOISE

875 MHz

885 MHz

BGA915N7E6327XTMA1

Infineon Technologies

NARROW BAND LOW POWER

BGA715L7

Infineon Technologies

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

10 dBm

COMPONENT

1.8

SOLCC6,.08,20

50 ohm

RF/Microwave Amplifiers

85 Cel

20 dB

-40 Cel

MATTE TIN

LOW NOISE

e3

BGA734L16

Infineon Technologies

NARROW BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

3

2.8

LCC16,.10SQ,20

RF/Microwave Amplifiers

85 Cel

-30 Cel

BGA748N16

Infineon Technologies

NARROW BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

4

2.8

LCC16,.10SQ,20

RF/Microwave Amplifiers

85 Cel

-30 Cel

BGA9H1BN6

Infineon Technologies

NARROW BAND LOW POWER

CGY180E6327

Infineon Technologies

NARROW BAND LOW POWER

10 dBm

2.5

COMPONENT

50 ohm

28 dB

T602B_MPA_2

Infineon Technologies

NARROW BAND LOW POWER

COMPONENT

50 ohm

9.5 dB

CGY181E6327

Infineon Technologies

NARROW BAND LOW POWER

25 dBm

1.9

COMPONENT

50 ohm

17.5 dB

SP001071580

Infineon Technologies

NARROW BAND LOW POWER

BGA231N7E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

0 dBm

COMPONENT

50 ohm

85 Cel

16 dB

-40 Cel

1550 MHz

1615 MHz

BGA231N7

Infineon Technologies

NARROW BAND LOW POWER

0 dBm

COMPONENT

50 ohm

85 Cel

16 dB

-40 Cel

1550 MHz

1615 MHz

BGA855N6E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

25 dBm

1.22

6.4 mA

COMPONENT

1.2/2.8

SOLCC6,.03,16

50 ohm

85 Cel

16.9 dB

-40 Cel

1164 MHz

1300 MHz

BGA231L7

Infineon Technologies

NARROW BAND LOW POWER

0 dBm

COMPONENT

50 ohm

85 Cel

16 dB

-40 Cel

1550 MHz

1615 MHz

BGA825L6SE6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

Gold (Au)

e4

BGA855N6

Infineon Technologies

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

25 dBm

1.22

6.4 mA

COMPONENT

1.2/2.8

SOLCC6,.03,16

50 ohm

85 Cel

16.9 dB

-40 Cel

1164 MHz

1300 MHz

BGA825L6S

Infineon Technologies

NARROW BAND LOW POWER

BGA231L7E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER

0 dBm

COMPONENT

50 ohm

85 Cel

16 dB

-40 Cel

1550 MHz

1615 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.