NARROW BAND LOW POWER RF & Microwave Amplifiers 599

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MAX2653	Maxim Integrated	NARROW BAND LOW POWER																	Tin/Lead (Sn/Pb)		e0	1805 MHz	1990 MHz
MAX2265EUE	Maxim Integrated	NARROW BAND LOW POWER						13 dBm	2.5		COMPONENT			50 ohm		85 Cel	24 dB	-40 Cel	Tin/Lead (Sn85Pb15)		e0	824 MHz	849 MHz
MAX2653EUA+T	Maxim Integrated	NARROW BAND LOW POWER									COMPONENT			50 ohm		85 Cel	16 dB	-40 Cel	Matte Tin (Sn)	IT CAN ALSO OPERATE AT 1930 TO 1990 MHZ	e3	1805 MHz	1880 MHz
MAX2371EGC+T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	MATTE TIN		e3	136 MHz	174 MHz
MAX2651EUB	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	BIPOLAR	2			9.6 mA	COMPONENT	3	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn85Pb15)	IT CAN ALSO OPERATE AT 1805 TO 1880 MHZ	e0	925 MHz	960 MHz
MAX2838ETM+T	Maxim Integrated	NARROW BAND LOW POWER						15 dBm			COMPONENT			50 ohm		85 Cel		-40 Cel	MATTE TIN	LOW NOISE	e3	3300 MHz	3900 MHz
MAX2652EUB-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	BIPOLAR	2			11 mA	COMPONENT	3	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn85Pb15)	IT CAN ALSO OPERATE AT 1805 TO 1880 MHZ	e0	925 MHz	960 MHz
MAX2245EBL-T10	Maxim Integrated	NARROW BAND LOW POWER						10 dBm	6		COMPONENT			50 ohm		85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0	2400 MHz	2500 MHz
MAX2244EBL	Maxim Integrated	NARROW BAND LOW POWER						10 dBm	6		COMPONENT			50 ohm		70 Cel		0 Cel	TIN LEAD		e0	2400 MHz	2500 MHz
MAX2373E/D-B0A	Maxim Integrated	NARROW BAND LOW POWER						5 dBm			COMPONENT			50 ohm		85 Cel	10.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	850 MHz	940 MHz
MAX2371EGC-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Tin/Lead (Sn85Pb15)		e0	136 MHz	174 MHz
MAX2656EXT+T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		15.2 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	Matte Tin (Sn)		e3	1800 MHz	2000 MHz
MAX2246EBL-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	9	PLASTIC/EPOXY	BIPOLAR	1	10 dBm	6	144 mA	COMPONENT	3	BGA9,3X3,20	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn63Pb37)		e0	2400 MHz	2500 MHz
MAX2265EUE+T	Maxim Integrated	NARROW BAND LOW POWER						13 dBm	2.5		COMPONENT			50 ohm		85 Cel	24 dB	-40 Cel	MATTE TIN		e3	824 MHz	849 MHz
MAX2371EGC+	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Matte Tin (Sn)		e3	136 MHz	174 MHz
MAX2267E/D	Maxim Integrated	NARROW BAND LOW POWER						6 dBm	2.5		COMPONENT			50 ohm		85 Cel	20.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	887 MHz	925 MHz
MAX2654EXT+T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		9.2 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12.7 dB	-40 Cel	NICKEL GOLD PALLADIUM			1400 MHz	1700 MHz
MAX2838ETM+	Maxim Integrated	NARROW BAND LOW POWER																	MATTE TIN		e3
MAX2373EGC+T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	12	CERAMIC		1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	MATTE TIN		e3	850 MHz	940 MHz
MAX2246EBL	Maxim Integrated	NARROW BAND LOW POWER						10 dBm	6		COMPONENT			50 ohm		85 Cel		-40 Cel	TIN LEAD		e0	2400 MHz	2500 MHz
MAX2267EUE-T	Maxim Integrated	NARROW BAND LOW POWER						6 dBm	2.5		COMPONENT			50 ohm		85 Cel	20.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	887 MHz	925 MHz
MAX2651EUB-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	BIPOLAR	2			9.6 mA	COMPONENT	3	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1805 TO 1880 MHZ	e0	925 MHz	960 MHz
S-AV21L	Toshiba	NARROW BAND LOW POWER																				135 MHz	155 MHz
S-AU52	Toshiba	NARROW BAND LOW POWER																				898 MHz	925 MHz
S-AV12	Toshiba	NARROW BAND LOW POWER																				144 MHz	148 MHz
TA4008F	Toshiba	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			2.5	12 mA	COMPONENT	3	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0	1640 MHz	1700 MHz
S-AU30A	Toshiba	NARROW BAND LOW POWER																				824 MHz	851 MHz
TA4009F	Toshiba	NARROW BAND LOW POWER							2.5		COMPONENT			50 ohm		85 Cel		-40 Cel				1895 MHz	1918 MHz
TA4013FU	Toshiba	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				14 mA	COMPONENT	2	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0
S-AU54	Toshiba	NARROW BAND LOW POWER																				925 MHz	940 MHz
TMD1414-02B	Toshiba	NARROW BAND LOW POWER			METAL	GAAS	1			300 mA		7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers	90 Cel		-40 Cel
S-AU31A	Toshiba	NARROW BAND LOW POWER																				872 MHz	905 MHz
TMD1414-02C	Toshiba	NARROW BAND LOW POWER			METAL	GAAS	1			300 mA		7,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers	90 Cel		-40 Cel
TMD1414-02	Toshiba	NARROW BAND LOW POWER			METAL	GAAS				300 mA		7	FLNG,.53"H.SPACE		RF/Microwave Amplifiers
S-AU40	Toshiba	NARROW BAND LOW POWER																				872 MHz	905 MHz
S-AU27ALAM	Toshiba	NARROW BAND LOW POWER																				400 MHz	430 MHz
TA4013F	Toshiba	NARROW BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				14 mA	COMPONENT	2	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0
S-AV21H	Toshiba	NARROW BAND LOW POWER																				150 MHz	175 MHz
S-AU56	Toshiba	NARROW BAND LOW POWER																				872 MHz	905 MHz
S-AU47	Toshiba	NARROW BAND LOW POWER																				824 MHz	849 MHz
UPC8230TU-E2-A	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		8 mA	COMPONENT	3	FL8,.09,20		RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel
UPG2137T5A	Renesas Electronics	NARROW BAND LOW POWER						0 dBm			COMPONENT					90 Cel	25 dB	-30 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1429 TO 1453 MHZ	e0	893 MHz	960 MHz
UPC3219GV-E1	Renesas Electronics	NARROW BAND LOW POWER									COMPONENT			50 ohm		85 Cel	39 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	10 MHz	100 MHz
MC-7640-E1	Renesas Electronics	NARROW BAND LOW POWER		8	PLASTIC/EPOXY	GAAS				770 mA		-2.5,3.5	MODULE,8LEAD,.4		RF/Microwave Amplifiers
UPC2763TB-E3	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		10 dBm		35 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	800 MHz	1900 MHz
UPC3219GV-E1-A	Renesas Electronics	NARROW BAND LOW POWER									COMPONENT			50 ohm		85 Cel		-40 Cel	Tin/Bismuth (Sn/Bi)	HIGH RELIABILITY	e6	10 MHz	100 MHz
UPC8211TK-E2	Renesas Electronics	NARROW BAND LOW POWER						10 dBm			COMPONENT					85 Cel	15.5 dB	-25 Cel
UPC8218T5A-E1	Renesas Electronics	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		3	16 dBm		30 mA	COMPONENT	3	SOLCC16,.1,16		RF/Microwave Amplifiers	85 Cel	39.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.