Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
COMPONENT |
50 ohm |
19.5 dB |
Pure Tin (Sn) |
LOW NOISE |
900 MHz |
1800 MHz |
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NXP Semiconductors |
NARROW BAND LOW POWER |
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NXP Semiconductors |
NARROW BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
17.6 dB |
-40 Cel |
TIN |
e3 |
1559 MHz |
1610 MHz |
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NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
26 dBm |
1.67 |
7.8 mA |
COMPONENT |
1.8,2.8 |
SOLCC6,.03,16 |
50 ohm |
85 Cel |
9.2 dB |
-40 Cel |
2300 MHz |
2690 MHz |
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NXP Semiconductors |
NARROW BAND LOW POWER |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
COMPONENT |
50 ohm |
11.6 dB |
Tin (Sn) |
e3 |
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NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
26 dBm |
1.67 |
7.8 mA |
COMPONENT |
1.8,2.8 |
SOLCC6,.03,16 |
50 ohm |
85 Cel |
9.2 dB |
-40 Cel |
2300 MHz |
2690 MHz |
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NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
COMPONENT |
3.3/5 |
QFP32,.35SQ,32 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
29 dB |
-40 Cel |
2400 MHz |
2500 MHz |
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NXP Semiconductors |
NARROW BAND LOW POWER |
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NXP Semiconductors |
NARROW BAND LOW POWER |
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NXP Semiconductors |
NARROW BAND LOW POWER |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
HYBRID |
1 |
30 dBm |
1.58 |
1200 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
36.3 dB |
TIN |
e3 |
3400 MHz |
3800 MHz |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
15 dBm |
1.92 |
6.4 mA |
COMPONENT |
0.8/1.8,2.8 |
SOLCC6,.03,16 |
50 ohm |
15.6 dB |
1164 MHz |
1299 MHz |
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NXP Semiconductors |
NARROW BAND LOW POWER |
PLASTIC/EPOXY |
HYBRID |
110 mA |
12 |
MOT CASE 431A-02 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
-20 Cel |
5 MHz |
200 MHz |
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NXP Semiconductors |
NARROW BAND LOW POWER |
PLASTIC/EPOXY |
HYBRID |
110 mA |
12 |
MOT CASE 431A-02 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
-20 Cel |
5 MHz |
200 MHz |
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NXP Semiconductors |
NARROW BAND LOW POWER |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
PLASTIC/EPOXY |
BIPOLAR |
COMPONENT |
2.5 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
19.5 dB |
Tin (Sn) |
LOW NOISE |
e3 |
900 MHz |
1800 MHz |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
150 Cel |
14 dB |
Tin (Sn) |
e3 |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
26 dBm |
1.22 |
7 mA |
COMPONENT |
0.8/1.8 |
50 ohm |
85 Cel |
10.5 dB |
-40 Cel |
2300 MHz |
2690 MHz |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
COMPONENT |
50 ohm |
15 dB |
Tin (Sn) |
e3 |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
125 Cel |
16 dB |
-40 Cel |
TIN |
e3 |
1559 MHz |
1610 MHz |
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NXP Semiconductors |
NARROW BAND LOW POWER |
1.7 |
COMPONENT |
50 ohm |
27 dB |
IT CAN ALSO OPERATE AT 800 TO 2500 MHZ |
824 MHz |
849 MHz |
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NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
26 dBm |
1.22 |
7 mA |
COMPONENT |
0.8/1.8 |
50 ohm |
85 Cel |
10.5 dB |
-40 Cel |
2300 MHz |
2690 MHz |
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NXP Semiconductors |
NARROW BAND LOW POWER |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
TIN |
e3 |
1559 MHz |
1610 MHz |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
Tin (Sn) |
e3 |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
COMPONENT |
50 ohm |
19.5 dB |
Tin (Sn) |
LOW NOISE |
e3 |
900 MHz |
1800 MHz |
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NXP Semiconductors |
NARROW BAND LOW POWER |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
Pure Tin (Sn) |
1559 MHz |
1610 MHz |
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NXP Semiconductors |
NARROW BAND LOW POWER |
1.7 |
COMPONENT |
50 ohm |
27 dB |
IT CAN ALSO OPERATE AT 800 TO 2500 MHZ |
824 MHz |
849 MHz |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
COMPONENT |
50 ohm |
15 dB |
Tin (Sn) |
e3 |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
150 Cel |
14 dB |
Tin (Sn) |
e3 |
||||||||||
|
NXP Semiconductors |
NARROW BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
125 Cel |
13 dB |
-40 Cel |
PURE TIN |
1559 MHz |
1610 MHz |
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NXP Semiconductors |
NARROW BAND LOW POWER |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
15 dB |
Tin (Sn) |
e3 |
|||||||||||
|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
HYBRID |
1 |
30 dBm |
1.58 |
1200 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
36.3 dB |
Tin (Sn) |
e3 |
3400 MHz |
3800 MHz |
||||||||
|
NXP Semiconductors |
NARROW BAND LOW POWER |
COMPONENT |
50 ohm |
19.5 dB |
Tin (Sn) |
LOW NOISE |
e3 |
900 MHz |
1800 MHz |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
18.5 dB |
-40 Cel |
TIN |
e3 |
1559 MHz |
1610 MHz |
|||||||||||||||
|
NXP Semiconductors |
NARROW BAND LOW POWER |
COMPONENT |
50 ohm |
14 dB |
Tin (Sn) |
e3 |
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|
Infineon Technologies |
NARROW BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
20 dB |
-40 Cel |
LOW NOISE |
1550 MHz |
1615 MHz |
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|
Infineon Technologies |
NARROW BAND LOW POWER |
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Infineon Technologies |
NARROW BAND LOW POWER |
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Infineon Technologies |
NARROW BAND LOW POWER |
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|
Infineon Technologies |
NARROW BAND LOW POWER |
SURFACE MOUNT |
7 |
PLASTIC/EPOXY |
1 |
COMPONENT |
2.78 |
LCC7(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
2.2 dB |
-35 Cel |
Matte Tin (Sn) |
e3 |
|||||||||||
Infineon Technologies |
NARROW BAND LOW POWER |
COMPONENT |
85 Cel |
-30 Cel |
AMPLIFIER WITH MIXER |
1100 MHz |
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Infineon Technologies |
NARROW BAND LOW POWER |
14.5 dB |
900 MHz |
1800 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.