Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
4 |
1 |
5 dBm |
1.67 |
COMPONENT |
1.8 |
BGA4,2X2,16 |
50 ohm |
85 Cel |
19 dB |
-40 Cel |
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|
Analog Devices |
NARROW BAND LOW POWER |
13 dBm |
2.5 |
COMPONENT |
50 ohm |
85 Cel |
24.5 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
824 MHz |
849 MHz |
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|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BICMOS |
1 |
5 dBm |
COMPONENT |
1.8/3 |
BGA6,2X3,16 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
19.5 dB |
-40 Cel |
TIN SILVER COPPER NICKEL |
CMOS COMPATIBLE |
e2 |
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|
Analog Devices |
NARROW BAND LOW POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
10.5 dB |
-40 Cel |
850 MHz |
940 MHz |
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|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
1 |
5 dBm |
5.5 mA |
COMPONENT |
2.7 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
136 MHz |
174 MHz |
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|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BICMOS |
1 |
10 dBm |
5.6 mA |
COMPONENT |
1.8/3 |
SOLCC6,.04,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16.5 dB |
-40 Cel |
GOLD NICKEL |
LOW NOISE |
e4 |
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|
Analog Devices |
NARROW BAND LOW POWER |
NICKEL GOLD PALLADIUM |
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|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
4 |
1 |
5 dBm |
1.67 |
COMPONENT |
1.8 |
BGA4,2X2,16 |
50 ohm |
85 Cel |
19 dB |
-40 Cel |
TIN SILVER COPPER NICKEL |
e2 |
|||||||||||
Analog Devices |
NARROW BAND LOW POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
10.5 dB |
-40 Cel |
136 MHz |
174 MHz |
||||||||||||||||||
|
Analog Devices |
NARROW BAND LOW POWER |
13 dBm |
2.5 |
COMPONENT |
50 ohm |
85 Cel |
23 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
824 MHz |
849 MHz |
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|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BICMOS |
1 |
5 dBm |
COMPONENT |
1.8/3 |
BGA6,2X3,16 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17.7 dB |
-40 Cel |
TIN SILVER COPPER NICKEL |
CMOS COMPATIBLE |
e2 |
||||||||
Analog Devices |
NARROW BAND LOW POWER |
TIN LEAD |
ULTRA LOW NOISE |
e0 |
400 MHz |
1500 MHz |
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|
Analog Devices |
NARROW BAND LOW POWER |
6 dBm |
2.5 |
COMPONENT |
50 ohm |
85 Cel |
23.5 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
887 MHz |
925 MHz |
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Analog Devices |
NARROW BAND LOW POWER |
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Analog Devices |
NARROW BAND LOW POWER |
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|
STMicroelectronics |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
8 dBm |
COMPONENT |
2.7 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
||||||||||||
STMicroelectronics |
NARROW BAND LOW POWER |
8 dBm |
COMPONENT |
50 ohm |
85 Cel |
18 dB |
-40 Cel |
||||||||||||||||||||
|
STMicroelectronics |
NARROW BAND LOW POWER |
10 dBm |
10 |
COMPONENT |
85 Cel |
32 dB |
-30 Cel |
TIN/NICKEL PALLADIUM GOLD |
e3/e4 |
2400 MHz |
2500 MHz |
|||||||||||||||
STMicroelectronics |
NARROW BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
1.5 |
COMPONENT |
2.8 |
TSSOP8,.19 |
RF/Microwave Amplifiers |
0 dB |
THREE GAIN LEVELS-0 DB, 18 DB AND 26 DB TYPICALLY AVAILABLE AT 2.8 VOLTS |
925 MHz |
960 MHz |
||||||||||||
|
STMicroelectronics |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BICMOS |
1 |
COMPONENT |
2.7 |
FL6,.047,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
1500 MHz |
1650 MHz |
||||||||||
STMicroelectronics |
NARROW BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
1.8 |
22.5 mA |
COMPONENT |
2.8 |
TSSOP8,.19 |
RF/Microwave Amplifiers |
0 dB |
THREE GAIN LEVELS-0 DB, 18 DB AND 26 DB TYPICALLY AVAILABLE AT 2.8 VOLTS |
1805 MHz |
1880 MHz |
||||||||||||
|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
10 dBm |
1.43 |
COMPONENT |
1.8/2.85 |
SOLCC6,.04,20 |
50 ohm |
150 Cel |
17.5 dB |
Tin (Sn) |
e3 |
1559 MHz |
1610 MHz |
||||||||
|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
10 dBm |
1.78 |
1.6 mA |
COMPONENT |
0.8,1.8/2.85 |
SOLCC6,.03,16 |
50 ohm |
85 Cel |
14.5 dB |
-40 Cel |
Tin (Sn) |
e3 |
1559 MHz |
1610 MHz |
||||||
|
NXP Semiconductors |
NARROW BAND LOW POWER |
|||||||||||||||||||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
TIN |
e3 |
1559 MHz |
1610 MHz |
||||||||||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
125 Cel |
16 dB |
-40 Cel |
TIN |
e3 |
1559 MHz |
1610 MHz |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
2 |
144 mA |
COMPONENT |
+-5 |
SSOP16,.25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14.6 dB |
-40 Cel |
LOW NOISE |
1710 MHz |
1910 MHz |
||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
10 dBm |
1.78 |
.002 mA |
COMPONENT |
1.8 |
SOLCC6,.03,16 |
50 ohm |
1559 MHz |
1610 MHz |
||||||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
||||||||||||||||||||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
125 Cel |
13 dB |
-40 Cel |
TIN |
e3 |
1559 MHz |
1610 MHz |
||||||||||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
10 dBm |
10 |
COMPONENT |
50 ohm |
IT CAN ALSO OPERATE AT 1710 TO 1910 MHZ |
880 MHz |
915 MHz |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
PLASTIC/EPOXY |
1 |
410 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
19 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
750 MHz |
|||||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
GAAS |
2 |
10 dBm |
3000 mA |
COMPONENT |
3.5 |
TSSOP20,.25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
-20 Cel |
IT CAN ALSO OPERATE AT 1710 TO 1910 MHZ |
880 MHz |
915 MHz |
|||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
TIN |
e3 |
1559 MHz |
1610 MHz |
||||||||||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
3 dBm |
5.5 mA |
COMPONENT |
3 |
SOP8,.25 |
RF/Microwave Amplifiers |
85 Cel |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
1700 MHz |
2100 MHz |
||||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
MODULE |
75 ohm |
100 Cel |
19 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
750 MHz |
||||||||||||||||||
|
NXP Semiconductors |
NARROW BAND LOW POWER |
PLASTIC/EPOXY |
BIPOLAR |
1 |
15 mA |
COMPONENT |
2.5 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
13 dB |
|||||||||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
||||||||||||||||||||||||||
|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
26 dBm |
1.67 |
7.8 mA |
COMPONENT |
1.8,2.8 |
SOLCC6,.03,16 |
50 ohm |
85 Cel |
9.2 dB |
-40 Cel |
2300 MHz |
2690 MHz |
||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
10 dBm |
1.78 |
.002 mA |
COMPONENT |
1.8 |
SOLCC6,.03,16 |
50 ohm |
1559 MHz |
1610 MHz |
||||||||||||
|
NXP Semiconductors |
NARROW BAND LOW POWER |
|||||||||||||||||||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
COMPONENT |
50 ohm |
85 Cel |
14 dB |
-40 Cel |
TIN |
LOW NOISE |
e3 |
1713 MHz |
1851 MHz |
||||||||||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
1.7 |
COMPONENT |
50 ohm |
27 dB |
IT CAN ALSO OPERATE AT 800 TO 2500 MHZ |
824 MHz |
849 MHz |
|||||||||||||||||||
|
NXP Semiconductors |
NARROW BAND LOW POWER |
COMPONENT |
50 ohm |
15 dB |
Tin (Sn) |
e3 |
||||||||||||||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
||||||||||||||||||||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
26 dBm |
1.22 |
7 mA |
COMPONENT |
0.8/1.8 |
50 ohm |
85 Cel |
10.5 dB |
-40 Cel |
2300 MHz |
2690 MHz |
||||||||||
|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
10 dBm |
1.78 |
.002 mA |
COMPONENT |
1.8 |
SOLCC6,.03,16 |
50 ohm |
1559 MHz |
1610 MHz |
|||||||||||
NXP Semiconductors |
NARROW BAND LOW POWER |
COMPONENT |
50 ohm |
85 Cel |
29 dB |
-40 Cel |
2400 MHz |
2500 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.