Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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Analog Devices |
WIDE BAND MEDIUM POWER |
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Analog Devices |
WIDE BAND MEDIUM POWER |
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Analog Devices |
WIDE BAND MEDIUM POWER |
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Analog Devices |
WIDE BAND MEDIUM POWER |
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Analog Devices |
WIDE BAND LOW POWER |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
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Analog Devices |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
115 mA |
5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
52 mA |
COMPONENT |
3/5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.6 dB |
-40 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
1 MHz |
2700 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
3,8 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
8 dB |
-40 Cel |
2000 MHz |
20000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
23 dBm |
COMPONENT |
8 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9.5 dB |
-40 Cel |
TIN LEAD |
e0 |
0 MHz |
20000 MHz |
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Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
30 dBm |
COMPONENT |
3 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
3400 MHz |
3800 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
120 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
6 dB |
-40 Cel |
200 MHz |
4000 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
200 ohm |
85 Cel |
20 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
1200 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
-5 dBm |
COMPONENT |
3/5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-55 Cel |
GOLD |
LOW NOISE |
e4 |
13000 MHz |
25000 MHz |
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Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
105 mA |
3/5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
COMPONENT |
3 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
4900 MHz |
5900 MHz |
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Analog Devices |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
17 dBm |
COMPONENT |
3.6/5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
2200 MHz |
2800 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
28 dBm |
COMPONENT |
50 ohm |
85 Cel |
10 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
12000 MHz |
16000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
2 |
14 dBm |
COMPONENT |
8 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
5000 MHz |
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Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
75 mA |
3/5 |
SOLCC6,.08,25 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
74 mA |
5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
200 ohm |
85 Cel |
15 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
1200 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
74 mA |
5 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
8 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND MEDIUM POWER |
26 dBm |
COMPONENT |
50 ohm |
85 Cel |
19 dB |
-55 Cel |
Matte Tin (Sn) |
e3 |
22000 MHz |
26500 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
COMPONENT |
1.8,3.3 |
SOLCC8,.08,20 |
100 ohm |
85 Cel |
22.5 dB |
-40 Cel |
21200 MHz |
23600 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND MEDIUM POWER |
GAAS |
1 |
6 |
DIE OR CHIP |
RF/Microwave Amplifiers |
85 Cel |
-55 Cel |
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Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
HIGH RELIABILITY |
e4 |
3500 MHz |
7000 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
325 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
5 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
400 MHz |
3000 MHz |
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Analog Devices |
SURFACE MOUNT |
32 |
CERAMIC |
GAAS |
1 |
8 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-55 Cel |
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Analog Devices |
WIDE BAND HIGH POWER |
36 dBm |
2 |
MODULE |
50 ohm |
60 Cel |
21 dB |
-30 Cel |
2000 MHz |
6000 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
5 |
TSOP6,.11,37 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
11 dB |
-55 Cel |
2000 MHz |
20000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
11 dBm |
75 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.5 dB |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
LOW NOISE, HIGH RELIABILITY |
e4 |
3500 MHz |
7000 MHz |
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Analog Devices |
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Analog Devices |
WIDE BAND MEDIUM POWER |
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Analog Devices |
WIDE BAND MEDIUM POWER |
Gold (Au) |
e4 |
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Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
2 |
281 mA |
3/5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
0 dBm |
COMPONENT |
3 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-40 Cel |
GOLD OVER NICKEL |
LOW NOISE |
e4 |
13000 MHz |
25000 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
MATTE TIN |
TAPE AND REEL |
e3 |
0 MHz |
1000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
GAAS |
1 |
0 dBm |
75 mA |
COMPONENT |
3 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
6000 MHz |
20000 MHz |
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Analog Devices |
NARROW BAND MEDIUM POWER |
12 dBm |
COMPONENT |
50 ohm |
85 Cel |
15.5 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
20 MHz |
500 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
23 dBm |
COMPONENT |
1.5,8 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
9.5 dB |
-40 Cel |
0 MHz |
20000 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
16 dB |
-55 Cel |
Matte Tin (Sn) |
e3 |
24000 MHz |
31500 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
GAAS |
1 |
27 dBm |
7 |
440 mA |
COMPONENT |
3.5,10 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
11 dB |
-40 Cel |
0 MHz |
22000 MHz |
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Analog Devices |
NARROW BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
14 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
1700 MHz |
2200 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
8 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND MEDIUM POWER |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.