Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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|
Analog Devices |
WIDE BAND LOW POWER |
13 dBm |
COAXIAL |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
SMA-F |
e4 |
500 MHz |
17000 MHz |
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|
Analog Devices |
WIDE BAND HIGH POWER |
PANEL MOUNT |
8 |
HYBRID |
1 |
550 mA |
MODULE |
34 |
SOT-115J |
75 ohm |
85 Cel |
26.7 dB |
-30 Cel |
45 MHz |
1218 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
10 |
PHEMT |
1 |
20 dBm |
1.17 |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
85 Cel |
17.5 dB |
-55 Cel |
20000 MHz |
54000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PHEMT |
1 |
18 dBm |
1.15 |
COMPONENT |
-0.4,3.5 |
DIE OR CHIP |
50 ohm |
85 Cel |
13 dB |
-55 Cel |
40000 MHz |
80000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
2 |
COAXIAL |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
SMA-F |
e4 |
5000 MHz |
10000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
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|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
9 |
PHEMT |
1 |
500 mA |
COMPONENT |
24 |
75 ohm |
110 Cel |
23 dB |
-30 Cel |
45 MHz |
1218 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
4 |
PHEMT |
1 |
23 dBm |
900 mA |
COMPONENT |
15 |
MODULE,4LEAD(UNSPEC) |
50 ohm |
75 Cel |
16 dB |
-40 Cel |
10 MHz |
20000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
COAXIAL |
50 ohm |
85 Cel |
5 dB |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
SMA-F |
e4 |
7000 MHz |
11000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
15 dBm |
COAXIAL |
50 ohm |
85 Cel |
9 dB |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
SMA-F |
e4 |
3000 MHz |
8000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
0 dBm |
COAXIAL |
50 ohm |
85 Cel |
20 dB |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
SMA-F |
e4 |
5000 MHz |
9000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
COMPONENT |
50 ohm |
85 Cel |
4.5 dB |
-40 Cel |
MATTE TIN |
e3 |
540 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COAXIAL |
50 ohm |
85 Cel |
14.5 dB |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
2.92 MM-F |
e4 |
17000 MHz |
27000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PHEMT |
1 |
18 dBm |
1.15 |
COMPONENT |
-0.4,3.5 |
DIE OR CHIP |
50 ohm |
85 Cel |
13 dB |
-55 Cel |
40000 MHz |
80000 MHz |
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Analog Devices |
SURFACE MOUNT |
4 |
METAL |
GAAS |
8 |
QFL4,.4SQ |
RF/Microwave Amplifiers |
85 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
e0 |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
COMPONENT |
50 ohm |
85 Cel |
21 dB |
-55 Cel |
71000 MHz |
76000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COAXIAL |
50 ohm |
85 Cel |
12 dB |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
SMA-F |
e4 |
1000 MHz |
12000 MHz |
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|
Analog Devices |
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|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
9 |
PHEMT |
1 |
500 mA |
COMPONENT |
24 |
75 ohm |
110 Cel |
23 dB |
-30 Cel |
45 MHz |
1218 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
25 dBm |
COAXIAL |
50 ohm |
70 Cel |
11.5 dB |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
SMA-F |
e4 |
10 MHz |
6000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
25 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
13.5 dB |
-40 Cel |
0 MHz |
10000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
13 dBm |
COAXIAL |
50 ohm |
85 Cel |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
SMA-F |
e4 |
500 MHz |
8000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
2 |
COAXIAL |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
SMA-F |
e4 |
8000 MHz |
12500 MHz |
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|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
40 |
GAN |
1 |
31 dBm |
1.54 |
COMPONENT |
LCC40,.24SQ,20 |
50 ohm |
85 Cel |
27 dB |
-40 Cel |
4800 MHz |
6000 MHz |
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Analog Devices |
SURFACE MOUNT |
4 |
METAL |
GAAS |
9 |
QFL4,.25SQ |
RF/Microwave Amplifiers |
85 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
e0 |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
COMPONENT |
50 ohm |
85 Cel |
21 dB |
-55 Cel |
71000 MHz |
76000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
4 |
GAAS |
1 |
15 dBm |
104 mA |
COAXIAL |
5 |
MODULE(UNSPEC) |
50 ohm |
85 Cel |
9.5 dB |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
SMA-F |
e4 |
2000 MHz |
18000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
23 dBm |
COAXIAL |
50 ohm |
85 Cel |
9 dB |
-55 Cel |
Gold (Au) - with Nickel (Ni) barrier |
SMA-F |
e4 |
2000 MHz |
20000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
GAN |
1 |
30 dBm |
2.1 |
COMPONENT |
50 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
33.5 dB |
-40 Cel |
2700 MHz |
3500 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
GAN |
1 |
30 dBm |
2.1 |
COMPONENT |
50 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
33.5 dB |
-40 Cel |
2700 MHz |
3500 MHz |
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|
Analog Devices |
WIDE BAND HIGH POWER |
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|
Analog Devices |
WIDE BAND HIGH POWER |
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|
Analog Devices |
WIDE BAND HIGH POWER |
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|
Analog Devices |
WIDE BAND HIGH POWER |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
1 |
0 dBm |
95 mA |
COMPONENT |
5 |
TSSOP10,.19,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
7.6 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
44 MHz |
880 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
19 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
2 MHz |
1600 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
Matte Tin (Sn) - annealed |
e3 |
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|
Analog Devices |
NARROW BAND HIGH POWER |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
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|
Analog Devices |
WIDE BAND LOW POWER |
6 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
2 MHz |
1600 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
1 |
0 dBm |
95 mA |
COMPONENT |
5 |
TSSOP10,.19,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
7.6 dB |
-40 Cel |
TIN LEAD |
e0 |
44 MHz |
880 MHz |
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|
Analog Devices |
NARROW BAND HIGH POWER |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
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|
Analog Devices |
WIDE BAND LOW POWER |
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|
Analog Devices |
WIDE BAND LOW POWER |
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|
Analog Devices |
WIDE BAND LOW POWER |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.