Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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|
Analog Devices |
WIDE BAND LOW POWER |
5 dBm |
50 ohm |
85 Cel |
14.5 dB |
-40 Cel |
NICKEL GOLD PALLADIUM |
LOW NOISE |
800 MHz |
1000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
11 dB |
-55 Cel |
50000 MHz |
95000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
11 dB |
-55 Cel |
50000 MHz |
95000 MHz |
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|
Analog Devices |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
32 |
GAN |
1 |
30 dBm |
1.5 |
COMPONENT |
50 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
30.5 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
900 MHz |
1600 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
18 |
CERAMIC, METAL-SEALED COFIRED |
GAAS |
1 |
27 dBm |
1.29 |
COMPONENT |
5 |
50 ohm |
85 Cel |
18.5 dB |
-40 Cel |
20000 MHz |
44000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
6000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
74 mA |
5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
74 mA |
5 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
3 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
135 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
28 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
3300 MHz |
3800 MHz |
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|
Analog Devices |
NARROW BAND LOW POWER |
MATTE TIN |
e3 |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
26 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
20.5 dB |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
24000 MHz |
29500 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
26 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
20.5 dB |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
24000 MHz |
29500 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
20.5 dB |
-40 Cel |
24000 MHz |
34000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
7 |
COMPONENT |
50 ohm |
85 Cel |
20.5 dB |
-40 Cel |
24000 MHz |
34000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
Tungsten/Nickel/Gold (W/Ni/Au) |
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|
Analog Devices |
NARROW BAND LOW POWER |
Matte Tin (Sn) - annealed |
e3 |
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|
Analog Devices |
WIDE BAND LOW POWER |
6 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
2 MHz |
1600 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
12 dBm |
COMPONENT |
50 ohm |
85 Cel |
18.8 dB |
-40 Cel |
MATTE TIN |
e3 |
20 MHz |
500 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
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|
Analog Devices |
WIDE BAND LOW POWER |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PHEMT |
1 |
32 dBm |
1.43 |
COMPONENT |
5 |
SOLCC6,.08,25 |
50 ohm |
85 Cel |
15 dB |
-40 Cel |
25 MHz |
12000 MHz |
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Analog Devices |
NARROW BAND LOW POWER |
2 |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
3150 MHz |
3400 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
8 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
1.38 |
90 mA |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.5 dB |
-40 Cel |
MATTE TIN |
e3 |
3100 MHz |
3900 MHz |
|||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
5 |
SOLCC6,.08,25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
10000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
SOLCC6,.08,25 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
NICKEL GOLD PALLADIUM |
||||||||||||||||||||||||
|
Analog Devices |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
1 |
5.5 mA |
2.7 |
LCC12,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
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|
Analog Devices |
NARROW BAND MEDIUM POWER |
12 dBm |
COMPONENT |
50 ohm |
85 Cel |
19.7 dB |
-40 Cel |
MATTE TIN |
e3 |
20 MHz |
500 MHz |
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|
Analog Devices |
WIDE BAND HIGH POWER |
24 dBm |
COMPONENT |
50 ohm |
85 Cel |
25 dB |
-40 Cel |
MATTE TIN |
e3 |
5500 MHz |
8500 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
18 dBm |
COMPONENT |
8 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-55 Cel |
LOW NOISE |
0 MHz |
20000 MHz |
|||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-55 Cel |
10 MHz |
10000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
10 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
0 MHz |
20000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
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|
Analog Devices |
NARROW BAND LOW POWER |
2 |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
3900 MHz |
4450 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
15 dBm |
220 mA |
COMPONENT |
6 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
GOLD NICKEL |
e4 |
2000 MHz |
4000 MHz |
||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
18 dBm |
390 mA |
COMPONENT |
5 |
LCC16,.16SQ,25 |
50 ohm |
85 Cel |
24.7 dB |
-40 Cel |
MATTE TIN |
e3 |
1800 MHz |
2700 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
27 dBm |
COMPONENT |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
18000 MHz |
44000 MHz |
|||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
74 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.5 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
6000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
HIGH RELIABILITY |
e3 |
0 MHz |
6000 MHz |
||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
16 dBm |
250 mA |
COMPONENT |
5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
MATTE TIN |
e3 |
3000 MHz |
4000 MHz |
||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
22 dBm |
COMPONENT |
8 |
LCC24,.2SQ,25 |
50 ohm |
85 Cel |
29.5 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
5500 MHz |
8500 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
8 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
7500 MHz |
26500 MHz |
|||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
GAAS |
1 |
20 dBm |
7 |
COMPONENT |
10 |
DIE OR CHIP |
50 ohm |
85 Cel |
12 dB |
-55 Cel |
Gold (Au) |
e4 |
48000 MHz |
||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
21 dB |
-55 Cel |
18000 MHz |
44000 MHz |
|||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
5 dBm |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-55 Cel |
Gold (Au) |
e4 |
24000 MHz |
40000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.