Analog Devices RF & Microwave Amplifiers 1,237

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

MAX2659ELT+

Analog Devices

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BICMOS

1

10 dBm

5.6 mA

COMPONENT

1.8/3

SOLCC6,.04,20

50 ohm

RF/Microwave Amplifiers

85 Cel

16.5 dB

-40 Cel

GOLD NICKEL

LOW NOISE

e4

MAX2233EEE+T

Analog Devices

NARROW BAND MEDIUM POWER

10 dBm

1.5

COMPONENT

50 ohm

85 Cel

23.9 dB

-40 Cel

Matte Tin (Sn) - annealed

IT CAN ALSO OPERATE AT 800 TO 1000 MHZ

e3

800 MHz

1000 MHz

MAX2630EUS+

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

BIPOLAR

1

5 dBm

1.25

11 mA

COMPONENT

3

TO-253

50 ohm

RF/Microwave Amplifiers

85 Cel

11 dB

-40 Cel

Matte Tin (Sn) - annealed

LOW NOISE

e3

800 MHz

1000 MHz

MAX2641

Analog Devices

WIDE BAND LOW POWER

TIN LEAD

ULTRA LOW NOISE

e0

1400 MHz

2500 MHz

MAX2640EUT+

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

5 dBm

6.4 mA

COMPONENT

3/5

TSOP6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

12.8 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

400 MHz

1500 MHz

MAX2634AXT+T

Analog Devices

WIDE BAND LOW POWER

NICKEL GOLD PALLADIUM

MAX2655EXT+

Analog Devices

NARROW BAND LOW POWER

NICKEL GOLD PALLADIUM

MAX2679ENS+

Analog Devices

NARROW BAND LOW POWER

SURFACE MOUNT

4

1

5 dBm

1.67

COMPONENT

1.8

BGA4,2X2,16

50 ohm

85 Cel

19 dB

-40 Cel

TIN SILVER COPPER NICKEL

e2

MAX2612ETA+

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

8

1

20 dBm

1.22

COMPONENT

5

50 ohm

85 Cel

17.5 dB

-40 Cel

Matte Tin (Sn) - annealed

LOW NOISE

e3

40 MHz

4000 MHz

MAX2371ETI

Analog Devices

NARROW BAND LOW POWER

5 dBm

COMPONENT

50 ohm

85 Cel

10.5 dB

-40 Cel

136 MHz

174 MHz

MAX2642EXT+

Analog Devices

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

e4

MAX2648EBT+

Analog Devices

WIDE BAND LOW POWER

15 dBm

COMPONENT

50 ohm

85 Cel

16 dB

-40 Cel

5000 MHz

6000 MHz

MAX2056ETX+D

Analog Devices

WIDE BAND MEDIUM POWER

20 dBm

COMPONENT

50 ohm

85 Cel

15.5 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

800 MHz

1000 MHz

MAX2643EXT+

Analog Devices

WIDE BAND LOW POWER

NICKEL GOLD PALLADIUM

MAX2472EUT+T

Analog Devices

WIDE BAND LOW POWER

10 dBm

50 ohm

85 Cel

-40 Cel

Matte Tin (Sn) - annealed

e3

500 MHz

2500 MHz

MAX2057ETX+D

Analog Devices

NARROW BAND MEDIUM POWER

20 dBm

COMPONENT

50 ohm

85 Cel

13.5 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

1700 MHz

2500 MHz

MAX2614ETA+T

Analog Devices

WIDE BAND LOW POWER

Matte Tin (Sn) - annealed

e3

MAX2264EUE+

Analog Devices

NARROW BAND LOW POWER

13 dBm

2.5

COMPONENT

50 ohm

85 Cel

23 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

824 MHz

849 MHz

MAX2612ETA+T

Analog Devices

WIDE BAND LOW POWER

Matte Tin (Sn) - annealed

e3

MAX2650EUS+

Analog Devices

WIDE BAND LOW POWER

13 dBm

1.3

COMPONENT

50 ohm

85 Cel

16.5 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

800 MHz

1000 MHz

MAX2130EUA+

Analog Devices

WIDE BAND MEDIUM POWER

15 dBm

2

COMPONENT

75 ohm

85 Cel

7.1 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

44 MHz

878 MHz

MAX2057ETX+

Analog Devices

NARROW BAND MEDIUM POWER

20 dBm

COMPONENT

50 ohm

85 Cel

13.5 dB

-40 Cel

TIN LEAD

e0

1700 MHz

2500 MHz

MAX2658EWT+T

Analog Devices

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BICMOS

1

5 dBm

COMPONENT

1.8/3

BGA6,2X3,16

50 ohm

RF/Microwave Amplifiers

85 Cel

17.7 dB

-40 Cel

TIN SILVER COPPER NICKEL

CMOS COMPATIBLE

e2

MAX2640

Analog Devices

NARROW BAND LOW POWER

TIN LEAD

ULTRA LOW NOISE

e0

400 MHz

1500 MHz

MAX2269EUE+

Analog Devices

NARROW BAND LOW POWER

6 dBm

2.5

COMPONENT

50 ohm

85 Cel

23.5 dB

-40 Cel

Matte Tin (Sn) - annealed

e3

887 MHz

925 MHz

MAX2634AXT/V+

Analog Devices

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

e4

ADL8106XCEZ

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

24

PHEMT

1

1.5

COMPONENT

3

LCC24,.2SQ,25

50 ohm

85 Cel

21 dB

-40 Cel

20000 MHz

54000 MHz

MAX2633EUT+

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

5 dBm

1.25

11 mA

COMPONENT

3

TSOP6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

11 dB

-40 Cel

TIN LEAD

LOW NOISE

e0

800 MHz

1000 MHz

MAX2373ETC+G071

Analog Devices

NARROW BAND LOW POWER

MAX2640AUT/V+

Analog Devices

WIDE BAND LOW POWER

MAX2615ETA/V+CKS

Analog Devices

WIDE BAND LOW POWER

MAX2242EBC+W

Analog Devices

NARROW BAND MEDIUM POWER

MAX2615ETA/V+TCKS

Analog Devices

WIDE BAND LOW POWER

MAX2373ETC+TG071

Analog Devices

NARROW BAND LOW POWER

HMC8413-CSL

Analog Devices

WIDE BAND MEDIUM POWER

ADL8112ACCZ-R7

Analog Devices

WIDE BAND LOW POWER

ADL8112ACCZ

Analog Devices

WIDE BAND LOW POWER

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.